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1 Sep 1974

Volume 25, Issue 5, pp. 251-321

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Integrated circuits as viewed with an acoustic microscope

R. A. Lemons and C. F. Quate

Appl. Phys. Lett. 25, 251 (1974); http://dx.doi.org/10.1063/1.1655459 (3 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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The images of a high‐frequency bipolar transistor obtained with an acoustic microscope are compared with those of a differential interference optical microscope and a scanning electron microscope in order to illustrate that the acoustic microscope can be used in a reflection‐type mode to obtain quality pictures of a surface containing integrated circuits. The frequency of the acoustic beam is 600 MHz and the resolution is near 2 μ.

Damage‐induced microdomains in LiTaO3

J. D. Venables

Appl. Phys. Lett. 25, 254 (1974); http://dx.doi.org/10.1063/1.1655460 (3 pages) | Cited 12 times

Online Publication Date: 9 October 2003

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Thin wafers of LiTaO3 prepared from fully poled boules by mechanical cutting and polishing techniques have been found to contain defects at high concentrations (up to 107∕cm2). Examination of these wafers by optical and electron microscope techniques indicates that the defects are cylindrical domains 1–3 μm in diameter, within which the ferroelectric axis is inverted relative to the surrounding material. These inverted domains appear to have nucleated at screw dislocations, b∥<0001>, which are observed near the axis of each domain. The results have implications for many applications of LiTaO3, because such multidomain configurations may contribute to undesirable optical scattering, Barkhausen noise, or degraded pyroelectric response. It is suggested also that the permanent optical damage generated in LiTaO3 by intense laser radiation may arise in part by the nucleation of similar inverted domains at dislocations generated through the action of large thermal stresses.

Wraparound ASW delay line with lens guidance and monolithic amplification

Jeannine Henaff, Francis Pirio, Marc Sinou, Michel Feldmann, and Michel Le Contellec

Appl. Phys. Lett. 25, 256 (1974); http://dx.doi.org/10.1063/1.1655461 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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A wraparound acoustic surface wave (ASW) delay line incorporating a periodical Δν∕ν lens guiding structure and a monolithic InSb amplifier is described. Normal mode computation accounts for parabolic anisotropy. Experimental results on a 120‐MHz recirculating LiNbO3 delay line are reported.

Implosion of an unneutralized drifting relativistic electron beam

M. Friedman and I. M. Vitkovitsky

Appl. Phys. Lett. 25, 259 (1974); http://dx.doi.org/10.1063/1.1655462 (2 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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A hollow relativistic electron beam, drifting in vacuum, can be made to implode radially when a grounded conductor is placed on the beam axis. The collapse is the result of the change in the direction of the electric field relative to that of a freely propagating beam. The entire energy content of the collapsed beam is dissipated in the conductor.

Surface waves and grating‐tuned photocathodes

J. G. Endriz

Appl. Phys. Lett. 25, 261 (1974); http://dx.doi.org/10.1063/1.1655463 (2 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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Deposition of an Sl☒ [Ag☒O☒Cs] type photocathode onto a diffraction grating substrate has been shown to produce a photoemitter which provides resonant coupling to surface waves and associated significant enhancement in quantum efficiency at preselected frequencies for specified light angle of incidence.

Electrically variable diffraction in spherulitic liquid crystals

Werner E. L. Haas and James E. Adams

Appl. Phys. Lett. 25, 263 (1974); http://dx.doi.org/10.1063/1.1655464 (2 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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An electrically controllable diffraction mode in liquid crystals is described. The variable grating is a stable single layer of small uniform birefringent spherulitic domains imbedded in a homeotropic matrix. The size of the domains is changed by small dc or ac voltages.

Electron irradiation experiments in gold with 2.5‐MeV electrons

M. O. Ruault and B. Jouffrey

Appl. Phys. Lett. 25, 265 (1974); http://dx.doi.org/10.1063/1.1655465 (3 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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Electron irradiations were performed on six nines purity gold in the 3‐MV electron microscope at Toulouse. Partially ordered vacancy tetrahedra were observed in all of the sample while interstitial loops were formed in its thick parts. Investigation of the nature and cause of the ordering are reported.

Equivalence of the electronically focused acoustic imaging device to a diode convolver

O. W. Otto

Appl. Phys. Lett. 25, 267 (1974); http://dx.doi.org/10.1063/1.1655466 (2 pages)

Online Publication Date: 9 October 2003

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It is demonstrated that the electronically focused acoustic imaging device is equivalent to a diode convolver where the sound image is formed by using the convolver to perform a Fresnel transform of the sound field at the receiving array.

Picosecond x‐ray streak camera

C. F. McConaghy and L. W. Coleman

Appl. Phys. Lett. 25, 268 (1974); http://dx.doi.org/10.1063/1.1655467 (3 pages) | Cited 18 times

Online Publication Date: 9 October 2003

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An ultrafast x‐ray‐sensitive streak camera is described. Time resolution is ≈50 psec. A streak record of the x rays from a laser‐produced iron plasma is included.

Analysis of α relaxation in polymers by asymmetrical distribution functions of relaxation times

J. Vanderschueren

Appl. Phys. Lett. 25, 270 (1974); http://dx.doi.org/10.1063/1.1655468 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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The distribution function of relaxation times for the α dispersion in polycarbonate has been calculated from measurements of thermally stimulated discharge currents. This function can be adequately described by the empirical expression of Havriliak and Negami, first derived from the complex plane analysis of ac dielectric data. The values of the distribution parameters obtained from the two types of measurements are in excellent agreement.

Microwave modulation of CO2 lasers in GaAs optical waveguides

P. K. Cheo and M. Gilden

Appl. Phys. Lett. 25, 272 (1974); http://dx.doi.org/10.1063/1.1655469 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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Sideband power has been generated at frequencies offset approximately 10 GHz from a CO2 laser line, P(20)00°1→10°0, in a thin slab of GaAs. Efficent nonlinear interaction was accomplished by having the thin slab serve as both an optical waveguide and a microwave minigap ridge waveguide. With a 20‐W microwave signal applied to a 30‐μm‐thick optical waveguide contained in a 0.9‐cm‐long ridge section, about 0.4% laser power has been transferred into the sidebands, consistent with the theory.

Comparison of radiation from laser‐produced and dc‐heated plasmas in xenon

W. T. Silfvast and O. R. Wood

Appl. Phys. Lett. 25, 274 (1974); http://dx.doi.org/10.1063/1.1655470 (4 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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The spectral radiance from a cylindrically shaped laser‐produced plasma in the ultraviolet region (200–300 nm) is shown to be 2–3 times greater than that produced by a xenon flashlamp of comparable size and input energy. The experimental results suggest several advantages of laser‐produced plasmas as sources for the optical pumping of lasers.

TEM observation of dislocation loops correlated with individual swirl defects in as‐grown silicon

L. I. Bernewitz, B. O. Kolbesen, K. R. Mayer, and G. E. Schuh

Appl. Phys. Lett. 25, 277 (1974); http://dx.doi.org/10.1063/1.1655471 (3 pages) | Cited 17 times

Online Publication Date: 9 October 2003

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Swirl defects in as‐grown silicon single crystals could be observed directly in a transmission electron microscope after application of a special sample preparation method. Complicated dislocation loops were found at positions of individual swirl defects which had been revealed as hillocks rather than as etch pits by a modified Sirtl etch.

Determination of impurity and mobility distributions in epitaxial semiconducting films on insulating substrate by C‐V and Q‐V analysis

Kurt Lehovec

Appl. Phys. Lett. 25, 279 (1974); http://dx.doi.org/10.1063/1.1655472 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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The mobility distribution in a semiconducting epitaxial film on insulating substrate is derived from transmission line analysis of Q‐V data combined with the C‐V method for obtaining impurity distribution. The mobility thus obtained is found to agree with that obtained by Hall effect measurements for an n‐type epitaxial GaAs layer on semi‐insulating Cr‐doped GaAs substrate.

Multi‐kilojoule HF laser using intense‐electron‐beam initiation of H2☒F2 mixtures

R. A. Gerber, E. L. Patterson, L. S. Blair, and N. R. Greiner

Appl. Phys. Lett. 25, 281 (1974); http://dx.doi.org/10.1063/1.1655473 (3 pages) | Cited 21 times

Online Publication Date: 9 October 2003

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We report here the results of an HF‐laser experiment in which an intense electron beam is used to initiate high‐pressure room‐temperature H2∕F2 mixtures. The maximum laser energy was 2.3 kJ in a 35‐nsec (FWHM) pulse with a mixture of 360‐Torr F2, 140‐Torr O2, 100‐Torr SF6, and 100‐Torr H2. Electrical efficiency for the laser was as high as 200%. The maximum chemical efficiency was 5.2%.

Space and time resolved gain measurements of a uv‐sustained CO2 laser

W. M. Clark and R. C. Lind

Appl. Phys. Lett. 25, 284 (1974); http://dx.doi.org/10.1063/1.1655474 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Laser gain measurements at 10.6 μm are presented for a 2.5×5×50‐cm high‐pressure uv‐sustained discharge in a CO2:N2:He:tri‐n ‐propylamine gas mixture. The spatial variation of the gain, with a resolution of a 1.5‐mm‐diam spot, is discussed. The temporal behavior of the gain is shown to be influenced by the uv‐induced photoionization, an acoustical disturbance generated by the uv source arcs, and by photoemission and collisional ionization effects near the solid electrode.

Transport properties in HgI2

G. M. Martin, P. Bach, and P. Guétin

Appl. Phys. Lett. 25, 286 (1974); http://dx.doi.org/10.1063/1.1655475 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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Time‐of‐flight measurements have been performed on HgI2. The electron drift mobility varies between 55 and 75 cm2∕V s for fields E ≤20 kV∕cm. The plot of the electron drift velocity versus E exhibits a maximum for E ∼80 kV∕cm; beyond this value the differential mobility becomes negative (∼−5 cm2∕V s). an electron trapping time τe+ is found larger than 100 ns. Our measurements also yield estimations of the hole mobility and of the hole trapping time.

GaAs☒Alx Ga1−x As double‐heterostructure lasers prepared by molecular‐beam epitaxy

A. Y. Cho and H. C. Casey

Appl. Phys. Lett. 25, 288 (1974); http://dx.doi.org/10.1063/1.1655476 (3 pages) | Cited 28 times

Online Publication Date: 9 October 2003

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GaAs☒Alx Ga1−x As double‐heterostructure (DH) lasers that exhibit laser properties similar to DH lasers prepared by liquid‐phase epitaxy have been prepared by molecular‐beam epitaxy. For a structure with a 0.53‐μ‐thick active layer, the as‐grown threshold current density at room temperature was 3.5×104 A∕cm2, but by annealing the threshold was reduced to 4.0×103 A∕cm2.

Influence of intensity of em field on multiphoton ionization of neon by a neodymium laser

G. Baravian, R. Benattar, and G. Sultan

Appl. Phys. Lett. 25, 291 (1974); http://dx.doi.org/10.1063/1.1655477 (2 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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A neodymium laser beam is focused in neon at low pressure. We measure the number of charges created for different laser powers. For powers corresponding to values of the electric field in the focused region greater than 3×107 V∕cm, there is a progressive decrease in the number of charges created.

Use of electron backscattering for smoothing the discharge in electron‐beam‐controlled lasers: Computations

Richard Cecil Smith

Appl. Phys. Lett. 25, 292 (1974); http://dx.doi.org/10.1063/1.1655478 (4 pages) | Cited 6 times

Online Publication Date: 9 October 2003

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The anode material in an electron‐beam‐controlled gas laser strongly influences the uniformity of the sustainer discharge, because the backscattering of the beam electrons from the anode is different for different atomic numbers. As a result of switching from aluminum to, for instance, uranium, there is a 60% increase in the ionization near the anode, according to Monte Carlo computations for a typical planar laser configuration. This effect can cause a 30–60% drop in the local electric field, depending upon the field dependence of the electron‐ion recombination coefficient. As an example for studying this effect, we have considered a 150‐keV beam passing through an 0.8‐mil Ti window into a 26‐cm‐wide planar cavity containing a 3:2:1 mixture of He, CO2, and N2 at 1 atm and 293 K, with Eave=4.5 kV∕cm. Window power loading, electron attenuation, electron energy distributions, and sustainer field distributions were calculated for the two different anode materials.

An unstable‐resonator flashlamp‐pumped dye laser

T. F. Ewanizky

Appl. Phys. Lett. 25, 295 (1974); http://dx.doi.org/10.1063/1.1655479 (3 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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A negative‐branch confocal unstable resonator has been found to significantly improve the beam quality of a coaxial flashlamp‐pumped rhodamine 6G dye laser. In a performance comparison with a conventional parallel‐plane mirror resonator, over an order‐of‐magnitude increase in laser beam radiance has been measured. The negative‐branch unstable resonator demonstrated relatively uncritical alignment sensitivity.

Residual disorder in Si from oxygen recoils in annealed ``through‐oxide'' arsenic implants

W. K. Chu, H. Müller, J. W. Mayer, and T. W. Sigmon

Appl. Phys. Lett. 25, 297 (1974); http://dx.doi.org/10.1063/1.1655480 (3 pages) | Cited 23 times

Online Publication Date: 9 October 2003

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Channeling effect measurements were used to evaluate the residual damage in Si after 1000 °C anneal for high‐dose (5×1015−2×1016 cm−2) As implantations through oxide layers. For these implantations the amount of damage after anneal increases with As dose and oxide thickness. This residual damage effect was simulated by oxygen implants into Si. We conclude that oxygen recoils are responsible for the disorder found in through‐oxide implants and for defects found at the periphery of oxide cuts used as implantations masks.

Generation and detection of 150‐psec mode‐locked pulses from a multi‐atmosphere CO2 laser

A. J. Alcock and A. C. Walker

Appl. Phys. Lett. 25, 299 (1974); http://dx.doi.org/10.1063/1.1655481 (3 pages) | Cited 33 times

Online Publication Date: 9 October 2003

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Mode‐locked operation of a uv‐preionized TE CO2 laser has been investigated at pressures in the 10–15‐atm range. By upconverting the output to 0.96 μm and recording it with a streak camera it has been shown that pulses of duration less than 150 psec can be generated using p‐type Ge saturable absorbers.

Generation of subnanosecond CO2 laser pulses at 10.6 μm by pulse compression techniques

B. J. Feldman and J. F. Figueira

Appl. Phys. Lett. 25, 301 (1974); http://dx.doi.org/10.1063/1.1655482 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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The results of an investigation of the time evolution of a mode‐locked pulse produced by a CO2 laser passively mode locked with an In‐doped Ge bleachable absorber are presented. The observed pulse shortening is explained by a simple theory of pulse compression due to the saturable absorber. Pulse durations as short as 400 ps are observed.

Gigahertz tunable waveguide CO2 laser

R. L. Abrams

Appl. Phys. Lett. 25, 304 (1974); http://dx.doi.org/10.1063/1.1655483 (3 pages) | Cited 40 times

Online Publication Date: 9 October 2003

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A sealed‐off cw waveguide CO2 laser has been continuously tuned over 1.2 GHz on a single transition at 10.6 μm. The laser consists of a 9.5 cm×1.0 mm square discharge tube fabricated from polished BeO slabs. Line selection is achieved with a diffraction grating and tuning is accomplished by piezoelectric control of the resonator length.
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