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15 Sep 1974

Volume 25, Issue 6, pp. 323-359


Tunable acousto‐optic filter utilizing acoustic beam walkoff in crystal quartz

I. C. Chang

Appl. Phys. Lett. 25, 323 (1974); http://dx.doi.org/10.1063/1.1655491 (2 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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A new configuration of a tunable acousto‐optic filter utilizing acoustic beam walkoff in crystal quartz is described. By changing the acoustic frequency from 54 to 175 MHz, tuning of optical wavelength from about 650 to 250 nm is obtained in a single filter.

Interior‐surface acoustic waveguiding in capillaries

Robert L. Rosenberg, R. V. Schmidt, and L. A. Coldren

Appl. Phys. Lett. 25, 324 (1974); http://dx.doi.org/10.1063/1.1655492 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Capillary tubing, used as a waveguide for surface acoustic waves confined to the interior surface, is shown to be a guiding structure that has a number of properties useful for long‐delay‐line applications. Very clean rf pulse transmission has been achieved, with spurious bulk modes stripped away by absorption at the outer surface. Low dispersion is available with bore diameters of a few Rayleigh wavelengths. In a fused silica structure flame‐drawn to a half‐meter length, the propagation loss was experimentally found to be limited by material bulk attenuation constants.

Deflection of atomic beams by resonance radiation using stimulated emission

I. Nebenzahl and A. Szöke

Appl. Phys. Lett. 25, 327 (1974); http://dx.doi.org/10.1063/1.1655493 (3 pages) | Cited 33 times

Online Publication Date: 9 October 2003

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A new method is presented for the deflection of atomic and molecular beams by momentum transfer from resonantly absorbed and reemitted electromagnetic radiation. The method, which uses adiabatic rapid passage by chirped optical pulses, is capable of high energy efficiency. It can be used for isotope separation.

Large refractive index change induced by ion implantation in lithium niobate

David T. Y. Wei, William W. Lee, and Louis R. Bloom

Appl. Phys. Lett. 25, 329 (1974); http://dx.doi.org/10.1063/1.1655494 (3 pages) | Cited 41 times

Online Publication Date: 9 October 2003

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Large but negative refractive index change (∼ 10% at 632.8‐nm line) is observed in several lithium niobate samples, each occurring in a thin layer induced by implantation of argon or neon ions. Implantation energy is 60 kV and the ion dose is 1016 cm−2 or more in each sample. Mechanisms causing the refractive index change and possible applications for integrated optics are discussed.

Double heterostructure Pb1‐xSnx Te☒PbTe lasers with cw operation at 77 K

S. H. Groves, K. W. Nill, and A. J. Strauss

Appl. Phys. Lett. 25, 331 (1974); http://dx.doi.org/10.1063/1.1655495 (3 pages) | Cited 35 times

Online Publication Date: 9 October 2003

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Diode lasers that operate cw at 77 K have been made from a Pb0.88Sn0.12 Te☒PbTe double heterostructure grown by liquid phase epitaxy. Junction diffusion during growth has been prevented by the use of Tl‐doped PbTe substrates. The wavelength emitted in cw operation has been temperature tuned from 10.5 μm at 12 K to less than 8.2 μm at 80 K, a range of nearly 280 cm−1. The cw threshold current density increases from 1.6 × 103 A∕cm2 at 12 K to 4.2 × 103 A∕cm2 at 77 K. The measured cw power is 10 mW in four modes at 12 K (1.8 × 104 A∕cm2) and 1.2 mW in a single mode at 77 K (7.5 × 103 A∕cm2).

High‐repetition‐rate copper iodide laser

I. Liberman, R. V. Babcock, C. S. Liu, T. V. George, and L. A. Weaver

Appl. Phys. Lett. 25, 334 (1974); http://dx.doi.org/10.1063/1.1655496 (2 pages) | Cited 15 times

Online Publication Date: 9 October 2003

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Quasicontinuous pulsed laser output at 5106 and 5782 Å is reported from 600°C copper iodide discharges at repetition rates near 8 kHz. In single pulses 35 μJ cm−3 has been observed, indicating that 0.28 W cm−3 volumetric power density can be achieved.

Time resolved absolute x‐ray measurements on laser‐produced plasmas

M. H. Key, K. Eidmann, C. Dorn, and R. Sigel

Appl. Phys. Lett. 25, 335 (1974); http://dx.doi.org/10.1063/1.1655497 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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The absolute intensity of soft x‐ray emission from laser‐generated plasmas has been studied with vacuum photodiodes of 1.0‐nsec time resolution.

Migration of Mo atoms across Mo☒Si interface induced by Ar+ ion bombardment

H. Nishi, T. Sakurai, T. Akamatsu, and T. Furuya

Appl. Phys. Lett. 25, 337 (1974); http://dx.doi.org/10.1063/1.1655498 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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Backscattering analysis is used to investigate the effect of 150‐keV Ar ion bombardment on Mo thin films evaporated on silicon. Ar ion bombardment induces the migration of Mo atoms into the underlying substrate. These migration phenomena are caused mainly by an atomic recoil process, and depend on implanted ion dose and on film thickness. These phenomena are also affected by the peculiarity of the Mo☒Si interface. The migration of Mo atoms occurs most noticeably at a thickness of 450±50 Å, where about five Mo atoms for every incident Ar ion are introduced.

Measurements of charge propagation in Si3N4 films

B. H. Yun

Appl. Phys. Lett. 25, 340 (1974); http://dx.doi.org/10.1063/1.1655499 (3 pages) | Cited 49 times

Online Publication Date: 9 October 2003

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A new experimental technique is described, which measures the injection and propagation of charge in the Si3N4 film of an MNOS structure caused by a pulsed electric field. Contrary to the widely held contention that the electrons injected from the Si are trapped in and very near the SiO2☒Si3N4 interface, a contention resulting from the assumption that the trap density near this interface usually far exceeds the number of injected electrons, this work finds that the spatial distribution of the trapped electrons extends deep into the Si3N4 film. In fact, the centroid of the spatial distribution of the trapped electrons in a Si3N4 film ≃500 Å thick can be as much as 150 Å or more from the SiO2☒Si3N4 interface, indicating that the span of the distribution extends across almost the entire thickness of the film with an average density of trapped electrons in the order of 3 × 1018∕cm3. It is shown that, in general, the centroid of the trapped charge distribution in the Si3N4 film of a given device structure is a function of the applied field and its duration.

Efficient uv generation at 3547 Å in RDP

K. Kato

Appl. Phys. Lett. 25, 342 (1974); http://dx.doi.org/10.1063/1.1655500 (2 pages) | Cited 4 times

Online Publication Date: 9 October 2003

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The efficient generation of uv radiation at 3547 Å has been achieved in rubidium dihydrogen phosphate (RDP) through frequency mixing of the fundamental and second harmonic radiation of a Nd:YAG laser. An over‐all peak power conversion efficiency of 21% was obtained for the experimental conditions described, thus demonstrating the attractiveness of RDP for frequency conversion applications.

A nitrogen ion laser pumped by charge transfer

C. B. Collins, A. J. Cunningham, and M. Stockton

Appl. Phys. Lett. 25, 344 (1974); http://dx.doi.org/10.1063/1.1655501 (2 pages) | Cited 44 times

Online Publication Date: 9 October 2003

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The first nitrogen ion laser pumped by charge transfer from He2+ is reported in this work. Intense laser emission in the violet at 427 nm has been observed and found to have a linewidth less than 0.3 nm. The pumping ion, He2+, was produced by discharge of a fast‐pulsed electron beam gun, APEX‐1, into 7 atm of a mixture of helium and nitrogen. Excitation current densities were 1.4 kA∕cm2 at 1 MV over a 1 × 10 cm transverse geometry. Under these conditions, the efficiency of the emission of 427‐nm laser radiation was found to be 1.9% relative to the energy lost by the electron beam in the radiating volume.

Simultaneous measurement of absorption and scattering losses in bulk glass and optical fibers by a microcalorimetric method

Alcibiade Zaganiaris

Appl. Phys. Lett. 25, 345 (1974); http://dx.doi.org/10.1063/1.1655502 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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When light is launched into either an optical fiber or a bulk glass rod, discrimination of scattered and absorbed energies is possible through the different thermokinetics of these phenomena. The design and performance of a differential calorimetric arrangement are presented and simultaneous measurements of the various loss coefficients are reported. At the present time, sensitivity is of the order of 1 dB∕km and can be further improved.

R‐I profiling: A new technique for measuring semiconductor doping profiles

G. H. Glover and W. Tantraporn

Appl. Phys. Lett. 25, 348 (1974); http://dx.doi.org/10.1063/1.1655503 (2 pages) | Cited 1 time

Online Publication Date: 9 October 2003

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A new technique for measuring semiconductor doping profiles is described. The method is based on measurement of the isothermal space‐charge resistance R as a function of reverse current I in an avalanching abrupt junction. It is closely analogous to the usual C‐V profiling techniques but is complementary in the information gained. The new method has a minimum depth limitation set by the depletion region width at breakdown, but (in principle) has no maximum depth limit. Analysis of the technique and typical results using GaAs IMPATT diodes are presented.

Optically pumped cw Hg laser at 546.1 nm

N. Djeu and R. Burnham

Appl. Phys. Lett. 25, 350 (1974); http://dx.doi.org/10.1063/1.1655504 (2 pages) | Cited 20 times

Online Publication Date: 9 October 2003

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cw laser oscillation has been achieved on the 546.1‐nm line in Hg I using an optical pumping scheme. The potentials of this laser are discussed.

Liquid phase epitaxial (LPE) grown junction In1−xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K)

W. R. Hitchens, N. Holonyak, M. H. Lee, J. C. Campbell, J. J. Coleman, W. O. Groves, and D. L. Keune

Appl. Phys. Lett. 25, 352 (1974); http://dx.doi.org/10.1063/1.1655505 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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Laser operation (77 °K) of In1−xGaxP LPE p‐n junctions is demonstrated at λ∼5900 Å (2.10 eV, yellow). The junctions are prepared by the sequential growth (on GaAs1−yPy substrates) of first an n‐type layer and then a Zn‐doped p‐type layer (not compensated). During growth of the p‐type layer, Zn diffuses slightly (at reduced concentration) into the first layer, yielding a thin compensated active layer. The structure which results approximates in operation the behavior of a single heterojunction. Although the threshold for the laser operation of these devices is fairly high, it is demonstrated, nevertheless, that In1−xGaxP LPE grown junctions can be operated as lasers and, furthermore, at wavelengths λ ≲5900Å.

Microwave surface resistance of superconducting Mo0.75Re0.25

J. A. Yasaitis and R. M. Rose

Appl. Phys. Lett. 25, 354 (1974); http://dx.doi.org/10.1063/1.1655506 (2 pages)

Online Publication Date: 9 October 2003

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A Mo0.75Re0.25 alloy endplate was tested on a Nb TE011 mode microwave cavity resonant at 11.2 GHz. An upper bound for the surface resistance of 2.8 μΩ and a lower bound of 102 G for the microwave magnetic breakdown field were established for the alloy plate. Comparison of these results to current requirements for a superconducting linear accelerator demonstrated the potential feasibility of this alloy as a practical alternative to Nb and Pb for accelerator applications. This is the first alloy shown to be a potential alternative to Nb and Pb and arguments are presented which indicate possible practical advantages of Mo0.75Re0.25 over Nb and Pb.

Determination of wall mobility in garnets by high‐frequency magnetic susceptibility measurements

Takasu Hashimoto, Taisuke Miyoshi, Tatsuichi Hamasaki, Toshihiro Okada, Yasutaka Suemune, and Takatsugu Hattanda

Appl. Phys. Lett. 25, 356 (1974); http://dx.doi.org/10.1063/1.1655507 (2 pages)

Online Publication Date: 9 October 2003

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Magnetic domain wall mobilities in four kinds of bubble garnets are determined by the high‐frequency magnetic susceptibility measurement and are almost in agreement with bubble mobilities in these garnets obtained directly by a pulsed field gradient technique.

Magnetic anisotropy in Pb‐substituted Eu3 Fe5 O12 films

T. S. Plaskett, E. Klokholm, D. C. Cronemeyer, P. C. Yin, and S. E. Blum

Appl. Phys. Lett. 25, 357 (1974); http://dx.doi.org/10.1063/1.1655508 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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A large uniaxial magnetic anisotropy has been observed in (100) and (111) Pb‐substituted Eu3 Fe5 O12 garnet films grown by the LPE technique from PbO:B2O3 fluxes. For a Pb content of about 5.0 wt% the uniaxial anisotropy was 1.9×105 erg∕cm3 in films of (100) orientation and 0.5 × 105 erg∕cm3 for (111) film orientations. This uniaxial anisotropy is shown to be induced by the Pb and is similar to the growth‐induced anisotropy observed in mixed iron garnets.
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