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1 Oct 1974

Volume 25, Issue 7, pp. 363-428

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A single flux quantum Josephson junction memory cell

H. H. Zappe

Appl. Phys. Lett. 25, 424 (1974); http://dx.doi.org/10.1063/1.1655534 (3 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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Operation of a DRO single flux quantum Josephson junction memory cell is described. Writing and sensing is performed with coincident currents. The device acts as its own sense detector, switching to the gap voltage if a flux quantum was stored. Dense arrays not requiring standby power are potentially feasible.

Experimental observation of the switching transients resulting from single flux quantum transitions in superconducting Josephson devices

P. Guéret

Appl. Phys. Lett. 25, 426 (1974); http://dx.doi.org/10.1063/1.1655535 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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We have made what we believe is the first experimental observation of the switching transients resulting from single flux quantum transitions in superconducting devices. For that purpose, we used ``long'' Josephson junctions or interferometers which exhibit overlapping vortex modes. By applying a magnetic field to such devices, vortex‐mode transitions are induced. The resulting transients are detected by a small Josephson junction located nearby. The experimental results show unambiguously that the points where a signal is detected by the sense junction correspond to the vortex‐mode boundaries of the device. These results have important implications for memory applications.
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