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15 Oct 1974

Volume 25, Issue 8, pp. 431-469


Quantitative assessment of laser‐induced stress waves generated at confined surfaces

B. P. Fairand, A. H. Clauer, R. G. Jung, and B. A. Wilcox

Appl. Phys. Lett. 25, 431 (1974); http://dx.doi.org/10.1063/1.1655536 (3 pages) | Cited 37 times

Online Publication Date: 9 October 2003

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Laser‐induced stress waves in iron samples were analyzed by measuring the pressure environment at the back surface of various sample thicknesses. These results were compared with numerical calculations obtained from a one‐dimensional radiation hydrodynamics computer code. The experiments were conducted in an air environment under ambient conditions and the metal surfaces were confined by transparent overlays. Peak pressures exceeding 50 kbar were measured with quartz pressure transducers at a laser power density of about 109 W∕cm2. Computer predictions agreed favorably with the experimental results and indicated that peak pressures exceeding 100 kbar could be generated by appropriate modifications in the laser environment and target overlay configuration.

CuInSe2∕CdS heterojunction photovoltaic detectors

Sigurd Wagner, J. L. Shay, P. Migliorato, and H. M. Kasper

Appl. Phys. Lett. 25, 434 (1974); http://dx.doi.org/10.1063/1.1655537 (2 pages) | Cited 117 times

Online Publication Date: 9 October 2003

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We report CuInSe2∕CdS p‐n heterojunction photovoltaic detectors which display uniform quantum efficiencies of up to ∼70% between 0.55 and 1.25 μ. Response times as short as 5 nsec have been observed. A weak electroluminescence (0.01% external quantum efficiency) peaking near 1.4 μ has also been observed at room temperature.

Measurement of boron impurity profiles in Si using glow discharge optical spectroscopy

J. E. Greene, F. Sequeda‐Osorio, B. G. Streetman, J. R. Noonan, and C. G. Kirkpatrick

Appl. Phys. Lett. 25, 435 (1974); http://dx.doi.org/10.1063/1.1655538 (4 pages) | Cited 9 times

Online Publication Date: 9 October 2003

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Glow discharge optical spectroscopy (GDOS) has been applied to the measurement of impurity profiles in boron‐diffused and ion‐implanted Si samples. The GDOS technique provides a convenient and sensitive probe of boron impurity profiles; results are presented for concentrations below 5×1017 cm−3. For a Si sample which has been subjected to a 1‐h constant source boron diffusion at 1100°C, the measured profile exhibited enhanced diffusion effects typical of previously reported results measured by other techniques. Similarly, a sample implanted with 120‐keV B+ ions to a fluence of 1014 cm−2 exhibited a typical boron distribution. The position of the measured peak concentration corresponded well with that predicted by theory, and the implanted distribution exhibited a prominent tail as reported from other measurements.

Temporary gratings on germanium

T. A. Wiggins and Alfred Salik

Appl. Phys. Lett. 25, 438 (1974); http://dx.doi.org/10.1063/1.1655539 (3 pages) | Cited 10 times

Online Publication Date: 9 October 2003

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Diffraction gratings have been formed on the surface of germanium using two beams from a ruby laser inclined at an angle to each other. Grating spacings from 2 to 20 μm have been formed that appear to be present only during the illumination and no visible damage is observed. Subsequent illumination with a single beam produces no observable diffracted beams. Permanent gratings in damaged areas can be produced with more intense beams. The intensity of a diffracted order appears to depend on the product of the intensities of the incident beams. Several applications of the temporary grating are suggested.

Threshold reduction in Pb1−xSnx Te laser diodes through the use of double heterojunction geometries

L. R. Tomasetta and C. G. Fonstad

Appl. Phys. Lett. 25, 440 (1974); http://dx.doi.org/10.1063/1.1655540 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2003

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A systematic study has been made of the effect of the middle active region width in double heterojunction Pb1−xSnx Te∕PbTe laser diodes on the lasing threshold. A fourfold reduction in pulsed threshold over that of comparable single heterojunction lasers is demonstrated in lasers having 4‐μm‐wide middle regions. A comparison is also made between lasers fabricated by liquid phase epitaxy using undoped melts and substrates, and using thallium‐doped p ‐type PbTe layers; the latter is shown to yield thresholds as much as two times lower.

Temperature dependence of the absorption coefficient of GaAs and ZnSe at 10.6 μm

L. H. Skolnik, H. G. Lipson, B. Bendow, and J. T. Schott

Appl. Phys. Lett. 25, 442 (1974); http://dx.doi.org/10.1063/1.1655541 (4 pages) | Cited 8 times

Online Publication Date: 9 October 2003

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The temperature (T) dependence of the absorption coefficient β at 10.6 μm of Czochralski‐grown high‐resistivity GaAs and chemical vapor deposited (CVD) ZnSe is measured by laser calorimetry. Experimental data are compared with theoretical curves for intrinsic multiphonon absorption. The temperature dependence of β for GaAs is found to possibly exhibit multiphononlike behavior below ∼450°K, but deviates rapidly from theoretical predictions above ∼500°K. The latter effect may be attributed to an increase in free‐carrier density via thermal ionization from a level near 0.37 eV. The absorption coefficient of CVD ZnSe is found to be independent of T over the temperature range investigated, and therefore this material appears to be impurity or surface loss dominated.

Q switching and mode locking of CO2 laser with aromatic halogenated hydrocarbons

Jerald R. Izatt, George F. Caudle, and Brent L. Bean

Appl. Phys. Lett. 25, 446 (1974); http://dx.doi.org/10.1063/1.1655542 (3 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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Passive Q switching of the CO2 laser by a new class of saturable absorbers is reported. Results are presented for eight representatives of this class: benzene, chlorobenzene, bromobenzene, m‐dichlorobenzene o ‐dichlorobenzene, m ‐difluorobenzene, pentafluorobenzene, and hexafluorobenzene. These Q‐switching agents operate on a large number of lines in both the 9.6‐ and 10.6‐μ bands. Other aromatic halogens selected on the basis of their absorption spectra are expected to display similar Q‐switch characteristics. This new class of saturable absorbers provides increased flexibility in the production of CO2 laser pulses.

Propagation of a high‐intensity laser pulse with small‐scale intensity modulation

E. S. Bliss, D. R. Speck, J. F. Holzrichter, J. H. Erkkila, and A. J. Glass

Appl. Phys. Lett. 25, 448 (1974); http://dx.doi.org/10.1063/1.1655543 (3 pages) | Cited 28 times

Online Publication Date: 9 October 2003

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For laser beams of large aperture with power far above the critical power for self‐focusing, nonlinear propagation instabilities lead to the growth of small‐scale variations in intensity and phase. We report measurements of the growth rate for interference fringes in unpumped ED‐2 laser glass as a function of fringe spacing and intensity. Calculations based on the simplest form of linearized small‐scale instability theory agree approximately with the measured rates, and a more complete linearized treatment predicts the growth rates within experimental error.

Vacuum ultraviolet holography

G. C. Bjorklund, S. E. Harris, and J. F. Young

Appl. Phys. Lett. 25, 451 (1974); http://dx.doi.org/10.1063/1.1655544 (2 pages) | Cited 11 times

Online Publication Date: 9 October 2003

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We report the first demonstration of holographic techniques in the vacuum ultraviolet spectral region. Holograms were produced with coherent 1182‐Å radiation. The holograms were recorded in polymethyl methacrylate and examined with an electron microscope. A holographic grating with a fringe spacing of 836 Å was produced and far‐field Fraunhofer holograms of submicron particles were recorded.

InAs spin‐flip laser operation at 3 μm

R. S. Eng, A. Mooradian, and H. R. Fetterman

Appl. Phys. Lett. 25, 453 (1974); http://dx.doi.org/10.1063/1.1655545 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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Stimulated spin‐flip Raman scattering in InAs has been achieved using an HF laser pump near the band‐gap resonance. Thresholds were determined to be less than 20 W and conversion efficiency is estimated to be in excess of 20%.

Identification of the dominant diffusing species in silicide formation

W. K. Chu, H. Kraütle, J. W. Mayer, H. Müller, M.‐A. Nicolet, and K. N. Tu

Appl. Phys. Lett. 25, 454 (1974); http://dx.doi.org/10.1063/1.1655546 (4 pages) | Cited 65 times

Online Publication Date: 9 October 2003

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Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni2Si, VSi2, and TiSi2. Backscattering of MeV He has been used to determine the displacement of the markers. We found that while Si atoms predominate the diffusion in VSi2 and TiSi2, Ni atoms are the faster moving species in Ni2Si.

Metal‐diffused optical waveguides in LiNbO3

R. V. Schmidt and I. P. Kaminow

Appl. Phys. Lett. 25, 458 (1974); http://dx.doi.org/10.1063/1.1655547 (3 pages) | Cited 230 times

Online Publication Date: 9 October 2003

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Deposited films of transition metals (Ti, V, and Ni) have been diffused into LiNbO3 crystals to form low‐loss TE and TM mode optical waveguides. Using Ti, single‐mode low‐loss waveguides which confine the guided light to within ∼1 μm of the surface have been constructed. The choice of diffusion parameters allows independent control of important waveguide parameters.

Determination of saturation intensity in NH2D

L. Thielman and L. W. Davis

Appl. Phys. Lett. 25, 461 (1974); http://dx.doi.org/10.1063/1.1655548 (3 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Saturated absorption of monochromatic radiation by a Doppler‐broadened transition in NH2D has been measured as a function of intensity. The transition was Stark tuned into coincidence with the 10.6‐μm P(20) line of a CO2 laser. We thereby determined the dependence of the saturation intensity on pressure (5–120 mTorr) and beam radius (0.70–1.25 mm).

Electron energy distribution and excitation rate calculation in a discharge in CO☒He system

Frank T. Wu, Wai Mao Yu, and E. A. Lundstrom

Appl. Phys. Lett. 25, 463 (1974); http://dx.doi.org/10.1063/1.1655549 (2 pages) | Cited 2 times

Online Publication Date: 9 October 2003

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The electron energy distribution function has been numerically determined from the Boltzmann equation for some typical discharge conditions in CO and its mixtures. Collisions of the second kind have also been incorporated in the equation and it is found that the consideration of the second kind of collisions is important when the upper states are highly excited. This is, indeed, the case for the laser active medium.

Mode locking of a TEA CO laser

A. V. Nurmikko

Appl. Phys. Lett. 25, 465 (1974); http://dx.doi.org/10.1063/1.1655550 (2 pages) | Cited 5 times

Online Publication Date: 9 October 2003

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Forced mode locking of a TEA CO laser has been achieved on a number of vibrational‐rotational transitions. Peak powers have been measured in excess of 1 kW with detector‐limited pulsewidths in the nanosecond regime.

Phonon‐assisted transitions to a temperature‐independent deep level in Co☒Si

David C. Wong and Claude M. Penchina

Appl. Phys. Lett. 25, 466 (1974); http://dx.doi.org/10.1063/1.1655551 (2 pages) | Cited 3 times

Online Publication Date: 9 October 2003

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Photoconductivity has been studied in p‐type and high‐resistivity n‐type silicon compensated by cobalt. Threshold energies of 0.505, 0.537, and 0.572 eV are observed to be independent of temperature within the experimental accuracy of ±2 meV. This is the first direct experimental evidence of the temperature independence of a deep level in Si. The photoconductivity which is stronger for p‐type samples than for n type leads to its identification as a new deep level 0.521 eV ±2 meV from the valence band; the phototransitions are phonon assisted.

Coherent effects in large arrays of superconducting bridges

David William Palmer and J. E. Mercereau

Appl. Phys. Lett. 25, 467 (1974); http://dx.doi.org/10.1063/1.1655552 (3 pages) | Cited 16 times

Online Publication Date: 9 October 2003

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Series arrays of nearly identical superconducting proximity effect bridges have been fabricated in Nb∕Ta thin films. Arrays with up to 500 bridges respond cooperatively to incident radiation and produce voltage steps in response to incident 30–20 000‐MHz radiation at V =(number of bridges in array)×(hν∕2e).
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