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15 Jun 1975

Volume 26, Issue 12, pp. 659-724

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Observation of orthorhombic→tetragonal→cubic phase transitions in some PLZT ceramics

E. T. Keve

Appl. Phys. Lett. 26, 659 (1975); http://dx.doi.org/10.1063/1.88025 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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With increasing temperature the sequence of phase transitions orthorhombic→tetragonal→cubic is observed for a PLZT ceramic of 7.5/64/36 composition. At 20 °C the inverse sequence is seen as a function of poling field. The compositional dependence of the transition temperatures is reported over a limited range.
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64.70.K- Solid-solid transitions
77.80.B- Phase transitions and Curie point

Bleustein‐Gulyaev surface wave storage in CdS

C. Maerfeld and P. Tournois

Appl. Phys. Lett. 26, 661 (1975); http://dx.doi.org/10.1063/1.88026 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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Storage experiments of Bleustein‐Gulyaev surface acoustic wave in CdS, carried out at room temperature, are described. Storage time varies from 40 μsec to 2.5 msec. A linear relationship between the stored pattern decay time and the sample resistivity has been experimentally found. The storage mechanism involves deep bulk traps.
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72.50.+b Acoustoelectric effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
63.20.K- Phonon interactions

Applicability of x‐ray filter method to thermometry of a noncorona (CH2)n laser‐produced plasma

J. P. Rager and B. V. Robouch

Appl. Phys. Lett. 26, 664 (1975); http://dx.doi.org/10.1063/1.88027 (2 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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It is shown that the temperature as deduced by the filter method is unaffected by departures from the corona ionization equilibrium for a low‐temperature carbohydride laser‐produced plasma.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Positioning of relativistic superpinched beams by control of the anode return currents

J. G. Kelly

Appl. Phys. Lett. 26, 665 (1975); http://dx.doi.org/10.1063/1.88028 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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The centering of relativistic superpinched beams from large aspect ratio diodes (r/d≫1) onto small targets for studies of superpinches relies on a centering force, which is normally so weak that small diode asymmetries will cause the beam to pinch off axis. A new technique is described herein that increases the magnetic centering force by approximately a factor of 103 through control of the return current flow pattern on the anode surface. Preliminary experiments conducted on the Nereus accelerator (Vg=100 kV, Ip=50 kA, and τ=50 ns) have demonstrated that the superpinch can be reproducibly centered within 0.025 cm of the axis of a 2.54‐cm‐diam flat cathode.
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29.25.-t Particle sources and targets
29.27.-a Beams in particle accelerators
41.75.Fr Electron and positron beams
28.52.-s Fusion reactors

Production of intense megavolt ion beams with a vacuum reflex discharge

S. Humphries, R. N. Sudan, and W. C. Condit

Appl. Phys. Lett. 26, 667 (1975); http://dx.doi.org/10.1063/1.88029 (4 pages) | Cited 19 times

Online Publication Date: 2 September 2008

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Experiments have been carried out using a reflex triode‐type pulsed ion accelerator at voltages up to 1.8 MeV. Large reductions in the breakdown electron current drawn by the system resulted from the electron reflexing. Diode closure was the major problem and was strongly affected by the choice of anode materials. The best results were obtained with thin aluminum foil anodes. Over a total accelerating pulse of 130 nsec peak aluminum currents in excess of 5 kA were extracted with a peak energy of Al++ of 3 MeV.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Negative electron affinity GaAs: A new source of spin‐polarized electrons

D. T. Pierce, F. Meier, and P. Zürcher

Appl. Phys. Lett. 26, 670 (1975); http://dx.doi.org/10.1063/1.88030 (3 pages) | Cited 41 times

Online Publication Date: 2 September 2008

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The spectrum of spin polarization and yield of photoelectrons from negative electron affinity GaAs were measured. The results show that GaAs is an excellent source of polarized electrons with P∼50%, high current, small energy spread, and high brightness.
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81.65.-b Surface treatments
29.25.-t Particle sources and targets
41.75.Fr Electron and positron beams

Properties of infrared cat‐whisker antennas near 10.6 μ

Bor‐long Twu and S. E. Schwarz

Appl. Phys. Lett. 26, 672 (1975); http://dx.doi.org/10.1063/1.88031 (4 pages) | Cited 41 times

Online Publication Date: 2 September 2008

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Radiation patterns of 10.6‐μ infrared antennas have been obtained experimentally and interpreted by means of a simple theory. It is found that the effective antenna length is equal to the length of the etched portion of the sharpened cat‐whisker antenna. This effective antenna length appears to be caused by decoupling of the electromagnetic field across a shape discontinuity of the antenna wire. The results suggest a simple means for defining shape and size of infrared antenna structures.
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84.40.Ba Antennas: theory, components and accessories
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Distribution of charge in electrets

R. E. Collins

Appl. Phys. Lett. 26, 675 (1975); http://dx.doi.org/10.1063/1.88032 (3 pages) | Cited 54 times

Online Publication Date: 2 September 2008

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Measurements are reported of the total charge and its mean position in liquid‐charged FEP electrets. A new nondestructive technique has been used. The large difference in decay rates of positive and negative liquid‐charged electrets is accompanied by quite different behavior of the deposited charge as it migrates through the electret. The total volume charge density present in untreated FEP has been measured: it typically amounts to 0.1–0.6 C m−3 for 25‐μ‐thick material.
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77.22.Ej Polarization and depolarization

Ranges of ions with Z1⩾54 in Al and Al2O3

H. H. Andersen, J. Bøttiger, and H. Wolder Jørgensen

Appl. Phys. Lett. 26, 678 (1975); http://dx.doi.org/10.1063/1.88033 (2 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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Ranges of Xe, Cs, Eu, Au, and Tl in polycrystalline Al and anodic Al2O3 at 75–100 keV are reported. Ranges in Al2O3 are found to be about 30% higher than predicted by the LSS theory for all Z1. The shapes of the depth distributions are in excellent agreement with theoretical calculations. In Al, considerable deviations from theory for the most probable ranges and for the shapes of the distributions are found. These deviations are attributed to crystalline effects.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
29.40.-n Radiation detectors

Temperature dependence of transverse planar voltages in laser‐irradiated Pt and Pd films

R. J. von Gutfeld and E. E. Tynan

Appl. Phys. Lett. 26, 680 (1975); http://dx.doi.org/10.1063/1.88034 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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The temperature dependence of laser‐induced transverse voltages in Pt and Pd films has been investigated in the range ∼25–300 °K. When the data are normalized to a constant average film temperature gradient, a close similarity is found between the normalized values and bulk thermopower data throughout the temperature range. These results suggest a possible model requiring only scalar thermopower coefficients.
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72.40.+w Photoconduction and photovoltaic effects
72.15.Jf Thermoelectric and thermomagnetic effects

A method for improving continuous wave laser penetration of metal targets

Jay A. Fox

Appl. Phys. Lett. 26, 682 (1975); http://dx.doi.org/10.1063/1.88024 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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A method for increasing the penetrating efficiency of a continuous wave (cw) laser beam has been discovered. By combining a Q‐switched laser pulse with the cw beam, the irradiation time necessary for penetration of 20‐mil steel targets decreased by more than a factor of 2. The hole thus produced was substantially free of resolidified fragments commonly associated with cw penetration.
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79.20.Ds Laser-beam impact phenomena

Preferential evaporation of In from GaxIn1−xAs

Bernard Goldstein and Daniel Szostak

Appl. Phys. Lett. 26, 685 (1975); http://dx.doi.org/10.1063/1.88035 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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We have observed a significant change in the surface composition of the ternary GaxIn1−xAs at temperatures ≳500 °C due to the preferential evaporation of In. Both Auger electron analysis of the surface and quadrupole mass analysis of the evaporation products were used to study this evaporation. Controlled sputter etching indicated that the In‐depleted region was 5–6 atom layers deep. The reconstruction of both the normal and In‐depleted surfaces was the same, as indicated by LEED and there was no change in the basic III‐V stoichiometry. Some possible consequences of such a surface composition change are briefly discussed for the case of photoemission from cesiated surfaces.
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79.60.Jv Interfaces; heterostructures; nanostructures
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.49.Jk Electron scattering from surfaces

Third harmonic generation in phase‐matched alkali metal vapors

D. M. Bloom, G. W. Bekkers, J. F. Young, and S. E. Harris

Appl. Phys. Lett. 26, 687 (1975); http://dx.doi.org/10.1063/1.88036 (3 pages) | Cited 27 times

Online Publication Date: 2 September 2008

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We report improvements in conversion efficiency for third harmonic generation in sodium and rubidium vapor. 30‐psec pulses of radiation at 1.064 μm have been converted to 0.3547 μm with an energy conversion efficiency of 10%. Factors limiting conversion efficiency are discussed.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.50.-p Quantum optics

TeO2 anisotropic Bragg light deflector without midband degeneracy

T. Yano, M. Kawabuchi, A. Fukumoto, and A. Watanabe

Appl. Phys. Lett. 26, 689 (1975); http://dx.doi.org/10.1063/1.88037 (3 pages) | Cited 16 times

Online Publication Date: 2 September 2008

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An advanced acousto‐optic light deflector has been designed using the acoustic shear wave traveling slightly off the [110] axis in TeO2. The midband mode degeneracy reported by Warner et al., which decreases the diffracted light intensity, has been shifted off from the active frequency region. A linearly polarized wave can be used as the incident light instead of the elliptically polarized wave used in the conventional deflector designed by Warner et al. The deflector yields a larger number of resolvable spots due to the broadened bandwidth. Experimentally, with 6328‐Å light, a 3‐dB bandwidth of 50 MHz was observed with a diffraction efficiency of 80% and an electric power of 350 mW. The new deflector has a capacity of 500 resolvable spots with a random access time of 10 μsec.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

cw fiber laser of NdLa pentaphosphate

H. P. Weber, P. F. Liao, B. C. Tofield, and P. M. Bridenbaugh

Appl. Phys. Lett. 26, 692 (1975); http://dx.doi.org/10.1063/1.88038 (3 pages) | Cited 18 times

Online Publication Date: 2 September 2008

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cw operation at 1.051 μm of a waveguide laser consisting of a crystalline fiber of Nd0.5La0.5P5O14, 12×12 μm in cross section and 0.68 mm in length, is reported. When longitudinally pumped with a Kr ion laser at 752.5 nm the room‐temperature laser threshold was less than 10‐mW absorbed power.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Far‐infrared reflectivity studies of dielectric function of a Pb‐Sn‐Te epitaxial film

W. E. Tennant and J. A. Cape

Appl. Phys. Lett. 26, 694 (1975); http://dx.doi.org/10.1063/1.88039 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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See Also: Erratum

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Far‐infrared reflectivity measurements form ∼50 to ∼250 cm−1 on a Pb0.82Sn0.18Te epitaxial film (P∼1016 cm−3) on a high‐carrier‐density substrate (P∼1018 cm−3) of similar composition showed interference oscillations. These detailed reflectivity data were fitted using the standard two‐oscillator model with a spatially variable plasma frequency. The fit determines the phonon frequencies, electron and phonon linewidths, high‐frequency dielectric constant, and, using existing effective‐mass data, the spatial profile of the free‐carrier density.
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78.20.-e Optical properties of bulk materials and thin films
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Nonsteady‐state techniques for determining the energy distribution of interface traps in MNOS (memory) devices

J. S. Uranwala, J. G. Simmons, and H. A. Mar

Appl. Phys. Lett. 26, 697 (1975); http://dx.doi.org/10.1063/1.88040 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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New techniques are used to obtain the energy distribution of interface traps throughout the band gap of MNOS devices. The techniques are based on thermal and isothermal dielectric relaxation current techniques. It is demonstrated that the techniques are capable of detecting small changes in the trap distribution, such as might occur due to ageing or termperature cycling.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Optical bends and rings fabricated by preferential etching

Cheng‐Chung Tseng, Dan Botez, and Shyh Wang

Appl. Phys. Lett. 26, 699 (1975); http://dx.doi.org/10.1063/1.88041 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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We have applied the preferential etching technique to the fabrication of optical bends and rings. Nearly perfect smooth waveguide walls formed by crystalline planes can still be obtained in the curved section. Applications of such preferentially etched optical bends and rings in integrated optics are discussed.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
81.65.Cf Surface cleaning, etching, patterning
81.65.Ps Polishing, grinding, surface finishing

Deep‐level controlled lifetime and luminescence efficiency in GaP

B. Hamilton, A. R. Peaker, S. Bramwell, W. Harding, and D. R. Wight

Appl. Phys. Lett. 26, 702 (1975); http://dx.doi.org/10.1063/1.88042 (3 pages) | Cited 28 times

Online Publication Date: 2 September 2008

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The influence of deep levels on the minority‐carrier lifetime and relative cathodoluminescent efficiency of undoped GaP has been investigated. Evidence that both these parameters are deep‐level controlled is presented. The dominant center was detected by thermal capture and emission of minority carriers optically injected into the depletion layer of Schottky barriers. This center was found to have a depth of ET−EV=0.75 eV and a hole capture cross section of approximately 4×10−14 cm2.
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78.60.Hk Cathodoluminescence, ionoluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

PbS MIS devices for charge‐coupled infrared imaging applications

F. J. Leonberger, A. L. McWhorter, and T. C. Harman

Appl. Phys. Lett. 26, 704 (1975); http://dx.doi.org/10.1063/1.88043 (4 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Results of an experimental investigation of PbS MIS devices suggest the feasibility of developing a monolithic two‐dimensional infrared charge‐coupled imaging device (CCID). This CCID would be operable at 77 K and have moderate imaging sensitivity out to about 3.5 μm. Measurements on MIS capacitors fabricated with a pyrolytic SiO2 insulator have shown that the PbS surface potential is variable with bias from accumulation through inversion, the interface state density is ∼1×1012 cm−2 eV−1, and the storage time at 77 K is about 2 sec. Calculations indicate that efficient charge transfer should be achievable with fat‐zero operation, and that imaging sensitivity will probably be controlled by the degree of uniformity that can be attained.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Temperature effects in Schottky‐barrier silicon solar cells

S. M. Vernon and W. A. Anderson

Appl. Phys. Lett. 26, 707 (1975); http://dx.doi.org/10.1063/1.88044 (3 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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Experimental results are reported concerning temperature effects from 25 to 125 °C on Schottky‐barrier solar cells which were fabricated using a semitransparent Cu/Cr barrier metal layer on p‐type silicon. The open‐circuit voltage decreased by 2.3 mV/°C and the fill factor by 0.11%/°C, while the short‐circuit current increased slightly with increased temperature. These results are consistent with previous work on p‐n–junction silicon solar cells. The diode quality factor n was shown to decrease with increased temperature, as predicted by field emission theory. The room‐temperature photovoltaic output of cell 96 remained at 0.54 V, 25.4 mA/cm2, and 8.5–10.6% efficiency using 80–100‐mW/cm2 sunlight illumination after repeated temperature cycling.
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84.60.Jt Photoelectric conversion

Surface impurities in silver halide films

R. C. Baetzold

Appl. Phys. Lett. 26, 709 (1975); http://dx.doi.org/10.1063/1.88045 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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Auger spectroscopy has shown that the divalent cation impurities Zn++, Cd++, and Pb++ in the concentration range above 0.1% segregate to the surface of silver halide films. Sputtering of the films shows a layer approximately 10 Å thick at the film‐vacuum interface where the impurities accumulate. The surface ratio of impurity to silver ion increases with the total amount of impurity present.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Hole injection into silicon nitride: Interface barrier energies by internal photoemission

D. J. DiMaria and P. C. Arnett

Appl. Phys. Lett. 26, 711 (1975); http://dx.doi.org/10.1063/1.88046 (3 pages) | Cited 39 times

Online Publication Date: 2 September 2008

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Energy barrier heights at the interfaces of metal–silicon nitride–silicon structures have been measured by internal photoemission as a function of metal electrode material and substrate doping. These measurements have been interpreted in terms of a dominant hole internal photoemission mechanism. Hole energy barriers from the Au, Al, or Mg Fermi level and the Si valence band to the Si3N4 valence band were found to be 1.9±0.1, 3.0±0.1, 4.0±0.1, and 2.1±0.1 eV, respectively.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects

Frequency doubling in KB5O8⋅4H2O and NH4B5O8⋅4H2O to 217.3 nm

C. F. Dewey, W. R. Cook, R. T. Hodgson, and J. J. Wynne

Appl. Phys. Lett. 26, 714 (1975); http://dx.doi.org/10.1063/1.88047 (3 pages) | Cited 38 times

Online Publication Date: 2 September 2008

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We have produced tunable phase‐matched second‐harmonic radiation in a KB5O8⋅4H2O crystal between 217.3 and 234.5 nm. Phase matching was achieved by crystal rotation. We also studied frequency doubling in NH4B5O8⋅4H2O.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Electroluminescence and photovoltaic detection in Cd‐implanted CuInSe2 p‐n junction diodes

Phil Won Yu, Y. S. Park, S. P. Faile, and J. E. Ehret

Appl. Phys. Lett. 26, 717 (1975); http://dx.doi.org/10.1063/1.88048 (3 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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p‐n junction diodes have been prepared by the ion implantation of Cd into p‐type CuInSe2. Electroluminescence is observed near 1.3 μ with internal quantum efficiency of 15% at 77 °K and ∼0.1% at room temperature. The photovoltaic response of typical diodes has a quantum efficiency of 60–70% in the wavelength region 0.7–1.1 μ.
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85.60.Jb Light-emitting devices
85.30.Kk Junction diodes
85.60.Gz Photodetectors (including infrared and CCD detectors)
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