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15 May 1975

Volume 26, Issue 10, pp. 549-589


Observation of three mechanisms of optical modulation caused by acoustic domains in CdS

Tomonobu Hata, Tsutomu Hara, Masaji Ishigaki, and Toshio Hada

Appl. Phys. Lett. 26, 549 (1975); http://dx.doi.org/10.1063/1.87987 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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This paper presents experimental results concerning optical attenuation caused by acoustic domains in CdS. Three mechanisms are assumed: These are (i) shift in the energy gap, (ii) light scattering by acoustic flux, and (iii) rotation of the plane of polarization of the incident light. These mechanisms are experimentally distinguished. And it is found that in the case of e∥c (where e is the polarization of the incident light and c the c axis of the crystal) three kinds of optical modulation exist, but in the case of e⊥c only the effect of scattering is substantial.
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72.50.+b Acoustoelectric effects
42.79.Hp Optical processors, correlators, and modulators

Residual defects in Si produced by recoil implantation of oxygen

R. A. Moline and A. G. Cullis

Appl. Phys. Lett. 26, 551 (1975); http://dx.doi.org/10.1063/1.87988 (3 pages) | Cited 29 times

Online Publication Date: 2 September 2008

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The defect structures remaining in Si wafers after implantation of O+ and As+ ions together with subsequent annealing treatment have been studied using the transmission electron microscope. For implantation of 1016 150‐keV As+/cm2 through 430 Å of SiO2 and subsequent annealing at 1000 °C in dry N2, the resulting defect structures show many similarities to those obtained following a 1–2×1016 10‐keV O+/cm2 implantation and annealing sequence. However, if 150‐keV As+ ions are implanted into bare Si, the general lattice disorder remaining after annealing is much smaller and the residual defects are much more widely spaced. The differences between the residual defects produced by the different As+ implantations are interpreted with the proposal that the recoil of oxygen from SiO2 is an important by‐product of implantations through SiO2 layers.
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61.72.U- Doping and impurity implantation

Influence of fluid‐dynamic phenomena on the occurrence of constriction in cw convection laser discharges

W. J. Wiegand and William L. Nighan

Appl. Phys. Lett. 26, 554 (1975); http://dx.doi.org/10.1063/1.87989 (4 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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The influence of gas residence time, turbulence, and discharge uniformity on the electrical power density threshold for glow constriction has been investigated for conditions typical of high‐power cw convection‐cooled molecular lasers. Relatively independent evaluation of the effect of these properties indicated that each has an important bearing on plasma stability. Reduction of fluid residence time in the discharge region was found to result in an approximately proportionate increase in the electrical power density at which constriction occurred in CO2 laser mixtures for pressures in the 20–200‐Torr range.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

A new concept for solar energy thermal conversion

J. J. Cuomo, J. F. Ziegler, and J. M. Woodall

Appl. Phys. Lett. 26, 557 (1975); http://dx.doi.org/10.1063/1.87990 (3 pages) | Cited 42 times

Online Publication Date: 2 September 2008

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A material has been developed which allows a new approach to be made to the conversion of solar energy to heat. It consists of a dense array of metal whiskers grown with spacings of a few wavelengths of visible light. The material selected has low emissivity, and achieves significant optical absorption by trapping the light by a geometric maze effect. We have deomonstrated that absorption of normal incidence light is greater than 98% from 0.5 to 40‐μm wavelengths, and hemispherical emissivity at 550 °C can be made less than 0.26. Since surfaces can be made of a single refractory element, such as W, high‐temperature solar conversion (550 °C) should be maintained with good surface stability.
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84.60.Jt Photoelectric conversion
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)

High‐pressure chemical waveguide laser

T. O. Poehler, R. E. Walker, and J. W. Leight

Appl. Phys. Lett. 26, 560 (1975); http://dx.doi.org/10.1063/1.87991 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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The exothermic chain reactions between deuterium and fluorine have been used to produce laser emission from carbon dioxide in a high‐pressure chemical waveguide laser. Chemical chain reactions initiated by flash photolysis of this system produced 10.6‐μm radiation from a 3‐mm‐diam laser tube having an effective length of 50 cm. Lasing occurs in stable D2‐F2‐CO2‐He mixtures at pressures as high as 1 atm with peak power of 2.5 kW for pulses of 20‐μsec duration.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence

A new waveguide switch/modulator for integrated optics

W. E. Martin

Appl. Phys. Lett. 26, 562 (1975); http://dx.doi.org/10.1063/1.87992 (3 pages) | Cited 44 times

Online Publication Date: 2 September 2008

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A waveguide optical switch and/or modulator device is described that uses a single‐mode waveguide version of the Mach‐Zehnder interferometer. A mode selective branching waveguide is used for switching, and modulation can be accomplished without external polarizers in single‐mode waveguides. The operation of a 1×2 switch fabricated by diffusion techniques in ZnSe is described.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
85.60.-q Optoelectronic devices

Conversion of cw light into a train of subnanosecond pulses using frequency modulation and the dispersion of a near‐resonant atomic vapor

J. E. Bjorkholm, E. H. Turner, and D. B. Pearson

Appl. Phys. Lett. 26, 564 (1975); http://dx.doi.org/10.1063/1.87993 (3 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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Sinusoidally frequency‐modulated cw laser light is converted into a train of repetitive short pulses by passing it through a nearly resonant atomic vapor. Using a 200‐MHz modulation frequency and sodium vapor, pulses as short as 240 psec, having peak powers of 6.3 times the input power, have been obtained at 5890 Å. Calculation and experiment are in good agreement.
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42.79.Hp Optical processors, correlators, and modulators
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
32.70.Cs Oscillator strengths, lifetimes, transition moments

New anodic native oxide of GaAs with improved dielectric and interface properties

Hideki Hasegawa, Kevin E. Forward, and Hans L. Hartnagel

Appl. Phys. Lett. 26, 567 (1975); http://dx.doi.org/10.1063/1.87994 (3 pages) | Cited 62 times

Online Publication Date: 2 September 2008

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A new method of forming an anodic native oxide of GaAs with excellent dielectric and interface properties is described. The oxide is grown in a very stable and reproducible manner in an electrolyte which is a suitable mixture of (i) water, (ii) weak carboxylic acid (tartaric or citric acid), and (iii) polyhydric alcohol. The breakdown field strength of the as‐grown oxide is 5×106 V/cm and the specific resistivity is 1014–1016 Ω cm. Relatively low temperature annealing in hydrogen results in greatly improved interface properties with a density of fast interface states near midgap of 1–2×1011 cm−2 eV−1, with only a small capacitance/voltage hysteresis, and only small frequency dispersion of capacitance in the accumulation region.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
84.32.Tt Capacitors

Recrystallization processes in polycrystalline silicon

C. Daey Ouwens and H. Heijligers

Appl. Phys. Lett. 26, 569 (1975); http://dx.doi.org/10.1063/1.87995 (3 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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Recrystallization processes in polycrystalline silicon made by a chemical vapor deposition technique have been investigated. Primary recrystallization has been observed between 1150 and 1250 °C, secondary recrystallization occurred above 1350 °C. By this procedure, grains of about 100 μm have been obtained. Recrystallized silicon can in principle be used as a substrate for making relatively inexpensive solar cells.
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81.10.Bk Growth from vapor
84.60.Jt Photoelectric conversion

Linear and nonlinear optical properties of lithium perchlorate trihydrate LiClO4⋅3H2O

J. G. Bergman, Denise Williams, G. R. Crane, and R. N. Storey

Appl. Phys. Lett. 26, 571 (1975); http://dx.doi.org/10.1063/1.87978 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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Lithium perchlorate trihydrate (LiClO4⋅3H2O) is shown to be nearly noncritically phase matchable for a 0.53‐μ pump, generating ultraviolet at 0.265 μ. The water white crystals are transparent out to 2100 Å. The nonlinear coefficients d33, d31, and d15 are (±0.79, ±0.68, ±0.77) ×d11(SiO2), respectively.
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42.65.-k Nonlinear optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Very rapid tuning of cw dye laser

John M. Telle and C. L. Tang

Appl. Phys. Lett. 26, 572 (1975); http://dx.doi.org/10.1063/1.87979 (3 pages) | Cited 23 times

Online Publication Date: 2 September 2008

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A method is described which allows the cw dye laser to be tuned over hundreds of angstroms on a nanosecond time scale in spite of the 100‐nsec cavity decay and buildup time. Data are provided to verify the proposed method. This tuning rate is fast enough to do, for example, chemical kinetic studies on a nanosecond time scale.
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42.55.Mv Dye lasers
82.53.-k Femtochemistry
06.60.Jn High-speed techniques (microsecond to femtosecond)

Nondestructive refractive‐index profile measurements of clad optical fibers

M. E. Marhic, P. S. Ho, and M. Epstein

Appl. Phys. Lett. 26, 574 (1975); http://dx.doi.org/10.1063/1.87980 (2 pages) | Cited 28 times

Online Publication Date: 2 September 2008

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An interferometric method in conjunction with Abel inversion is used to precisely measure the index of refraction profile of clad optical fibers without perturbing them. The sample is immersed in index‐matching fluid, so that fiber index variations cause only small phase shifts for rays propagating perpendicular to the axis, making interferometric methods applicable.
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42.81.-i Fiber optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Diffused junction photovoltaic infrared detectors using Pb1−xGexTe with 0.05⩽x⩽0.11

G. A. Antcliffe and R. A. Chapman

Appl. Phys. Lett. 26, 576 (1975); http://dx.doi.org/10.1063/1.87981 (2 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Photovoltaic infrared detectors were fabricated in p‐type Pb1−xGexTe with 0.05?x?0.11 using antimony impurity diffusion to form n‐p junctions. Measurements were performed between 77 and 195 K and the long‐wavelength response cutoffs varied from 3.5 to 4.5 μm. The temperature coefficient of the band gap changed from positive below the ferroelectric Curie temperature to negative above this temperature.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Optimum diffusion condition in the fabrication of a plastic lenslike medium

K. Iga, K. Yokomori, and T. Sakayori

Appl. Phys. Lett. 26, 578 (1975); http://dx.doi.org/10.1063/1.87982 (2 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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The optimum fabrication condition has been found in the preparation of a plastic lenslike medium which has a parabolic dielectric constant distribution. The maximum possible value of the focusing constant g=0.21 mm−1 was obtained for diallyl isophthalate–methylmethacrylate combination with a rod radius r0=1.5 mm.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
81.40.Tv Optical and dielectric properties related to treatment conditions

Hollow hydrogen spheres for laser‐fusion targets

C. A. Foster, C. D. Hendricks, and R. J. Turnbull

Appl. Phys. Lett. 26, 580 (1975); http://dx.doi.org/10.1063/1.87983 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Many laser fusion experiments require the use of hollow spherical shells of hydrogen (deuterium‐tritium mixture) as targets. We have produced hollow particles of normal hydrogen in preparation for producing shells of the various hydrogen isotopes and controlled mixtures of these isotopes. The hollow spheres were produced by ultrasonically nucleating bubbles in superheated liquid drops of hydrogen. Evaporation into the bubble increased its size and produced the shells.
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28.52.-s Fusion reactors
42.62.-b Laser applications
FREE

Comment on ’’Dynamic model of high‐pressure rare‐gas excimer lasers’’

J. B. Gerardo and A. Wayne Johnson

Appl. Phys. Lett. 26, 582 (1975); http://dx.doi.org/10.1063/1.87984 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The model of the rare‐gas excimer lasers that was recently proposed by Werner et al. is shown to be inconsistent with some experimental measurements of xenon dimer laser gain and laser intensity. Measurements of the laser intensity and laser‐medium gain of a xenon dimer laser show that the laser pulse terminates well before the laser‐medium gain falls below the prelasing losses of the optical resonator. The measured value of the stimulated‐emission cross section for the xenon dimer laser is (1.05±0.2) ×10−25 A cm2 at 1720 Å, where A is the transition probability of the upper energy level of the laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Avalanche photodiodes with a gain‐bandwidth product of more than 200 GHz

K. Berchtold, O. Krumpholz, and J. Suri

Appl. Phys. Lett. 26, 585 (1975); http://dx.doi.org/10.1063/1.87985 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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The design and characteristics of avalanche photodiodes with a gain‐bandwidth product in the range of 250 GHz are reported. The planar front‐illuminated silicon diodes are of the n+‐p‐π‐p+ reach‐through type.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Absence of dynamic conversion of bubbles in Permalloy‐coated garnet films of (YGdTm)3 (FeGa)5O12

Ryo Suzuki and Yutaka Sugita

Appl. Phys. Lett. 26, 587 (1975); http://dx.doi.org/10.1063/1.87986 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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The scatter in the bubble velocity has been investigated in Permalloy‐coated garnet films of high‐mobility (YGdTm)3 (FeGa)5O12. When Permalloy layers are 80 Å thick, the scatter does not exist even if the bias field is near the bubble run‐out field. This shows that the dynamic conversion does not occur in these films. When Permalloy layers become thicker than 120 Å, however, bubble velocities deviate to low values and show large scatter. The scatter in this case is due to pinning of planar domain walls of the Permalloy layer associated with bubbles.
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75.60.Ch Domain walls and domain structure
FREE

Erratum: Electron‐beam‐excited DFB laser in CdS

Yoshinobu Aoyagi and Susumu Namba

Appl. Phys. Lett. 26, 589 (1975); http://dx.doi.org/10.1063/1.88253 (1 page) | Cited 3 times

Online Publication Date: 2 September 2008

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Abstract Unavailable
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43.10.Vx Errata
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
79.20.Kz Other electron-impact emission phenomena
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