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1 Jun 1975

Volume 26, Issue 11, pp. 593-656

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Effect of reconstruction of a semiconductor surface on the crystal growth

J. A. Van Vechten

Appl. Phys. Lett. 26, 593 (1975); http://dx.doi.org/10.1063/1.88006 (4 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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It is well established that most low‐index semiconductor surfaces reconstruct in contact with vacuum or vapor. Covalent bonding considerations imply that they also reconstruct in contact with the liquid. Conventional precipitation theory shows that these first‐order transitions should have important consequences on the growth of the crystal. The kinetics of the Si (111) 2×1 to 7×7 reconstruction are explained and the consequent effect upon the growth is found in the observation by de Kock et al. of a 6‐orders‐of‐magnitude drop in vacancy cluster concentration at a pull rate of 0.5 cm/min.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

A Schottky‐diode acoustic memory and correlator

K. A. Ingebrigtsen, R. A. Cohen, and R. W. Mountain

Appl. Phys. Lett. 26, 596 (1975); http://dx.doi.org/10.1063/1.88023 (3 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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Experiments demonstrate that images of acoustic signals can be stored for tens of msec in a matrix of Schottky diodes on a silicon surface adjacent to a lithium niobate surface‐wave delay line. The experiments show charging times of the order of 10 nsec.
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43.60.+d Acoustic signal processing
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects

Birefringence in silicon monoxide films used for aligning liquid crystal layers

W. A. Crossland

Appl. Phys. Lett. 26, 598 (1975); http://dx.doi.org/10.1063/1.88016 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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Obliquely evaporated thin films of silicon monoxide are widely used to align nematic liquid crystal layers in electro‐optic devices, but the mechanism of this alignment is incompletely understood. This letter reports that such films exhibit birefringence, despite the basically amorphous structure of SiO. The nature of the birefringence appears to be related to the manner in which the films align the nematic director. It is suggested that the phenomenon may be due to form birefringence caused by anisotropic morphology in the films.
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78.20.Fm Birefringence
78.20.-e Optical properties of bulk materials and thin films
61.30.-v Liquid crystals
85.60.-q Optoelectronic devices

AES analysis of sodium in a corroded bioglass using a low‐temperature technique

C. G. Pantano Jr., D. B. Dove, and G. Y. Onoda Jr.

Appl. Phys. Lett. 26, 601 (1975); http://dx.doi.org/10.1063/1.88017 (2 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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Measurements have been made of sodium compositional profiles at a glass surface using Auger electron spectroscopy. It has been found that stable sodium signals may be obtained by lowering the temperature of the glass to 80 °K and by keeping the exciting electron beam current to less than 1 μA. Use of a low‐energy electron flood gun had little effect on the AES measurement but was found to be valuable in reducing charging during ion bombardment of the low‐temperature substrate. Observations on a glass designed for biological implant applications subjected to a simulated biological environment exposure showed that a region leached of alkali ions formed, and a Na‐, Ca‐, P‐rich film built up on the surface.
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87.85.E- Neural prosthetics
87.85.F- Smart prosthetics
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Triode optical gate: A new liquid crystal electro‐optic device

D. J. Channin

Appl. Phys. Lett. 26, 603 (1975); http://dx.doi.org/10.1063/1.88018 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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A new liquid crystal field effect electro‐optic device is described. Light transmission induced by voltage pulses across two electrodes is modulated or gated by voltage on a third electrode. The three‐terminal gating characteristics are applicable to scanning and multiplexing arrays of devices for displays or light valves. A novel enhancement mode is also demonstrated.
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85.60.-q Optoelectronic devices
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
85.30.Tv Field effect devices

Submillimeter detection using a Schottky diode with a long‐wire antenna

K. Mizuno, R. Kuwahara, and S. Ono

Appl. Phys. Lett. 26, 605 (1975); http://dx.doi.org/10.1063/1.88019 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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A Schottky diode originally made for use as a detector and a mixer in the millimeter‐waveglength region has been used as a room‐temperature fast detector in the submillimeter‐wavelength region. A voltage responsivity of 2 V/W and an NEP of 1×10−7 W/Hz1/2 at 337 μm were obtained by using high‐gain long‐wire‐antenna coupling. The experimental and theoretical responses of the antenna structure are compared.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
84.40.Ba Antennas: theory, components and accessories
85.30.Hi Surface barrier, boundary, and point contact devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Plasma electron heating by injection of low‐energy electrons

Noah Hershkowitz and K. N. Leung

Appl. Phys. Lett. 26, 607 (1975); http://dx.doi.org/10.1063/1.88020 (3 pages) | Cited 19 times

Online Publication Date: 2 September 2008

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It is shown that the electron temperature of a multidipole plasma can be significantly increased by injecting electrons with energy less than the ionization potential of the neutral gas. Electron temperatures determined from Langmuir probes and ion‐acoustic waves show close agreement.
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52.50.Gj Plasma heating by particle beams

Observation of a self‐colliding beam

Bogdan Maglich, Michael Mazarakis, Barry Robinson, John Galayda, Robert Gore, and Anthony P. Colleraine

Appl. Phys. Lett. 26, 609 (1975); http://dx.doi.org/10.1063/1.88021 (4 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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A single beam of accelerated deuterium ions, D+2, of 108 keV, injected into a highly inhomogeneous magnetic field, decreasing quadratically with the radial distance from the center, was made to collide head‐on with itself. The trajectory of the ’’self‐colliding beam’’ is a precessing figure 8, with the ions moving clockwise in both (upper and lower) loops and colliding head‐on in the center.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
29.25.-t Particle sources and targets
29.27.-a Beams in particle accelerators
28.52.-s Fusion reactors

Epitaxial crystalline films of the metallic polymer (SN)x 

A. A. Bright, Marshall J. Cohen, A. F. Garito, A. J. Heeger, C. M. Mikulski, and A. G. MacDiarmid

Appl. Phys. Lett. 26, 612 (1975); http://dx.doi.org/10.1063/1.87996 (4 pages) | Cited 46 times

Online Publication Date: 2 September 2008

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The achievement of fully oriented epitaxial films of polymeric sulfur nitride is reported together with initial results on their optical and transport properties. Oriented epitaxial thin films of (SN)x have been grown on various substrates including Mylar, Teflon, and polyethylene.
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68.55.-a Thin film structure and morphology
78.20.-e Optical properties of bulk materials and thin films
52.25.Fi Transport properties
73.61.At Metal and metallic alloys

New Bi phase transition near 300 kbar and 298 °K

C. G. Homan, T. E. Davidson, and D. P. Kendall

Appl. Phys. Lett. 26, 615 (1975); http://dx.doi.org/10.1063/1.87997 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Resistometric measurements were made on Bi to pressures in excess of 300 kbar. Reproducible resistance drops were observed at a pressure near 300 kbar. The related transition has been identified as the Bi VI‐IX transition.
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64.70.K- Solid-solid transitions
62.50.-p High-pressure effects in solids and liquids

Holographic microinterferometry of laser‐produced plasmas with frequency‐tripled probe pulses

D. T. Attwood, L. W. Coleman, and D. W. Sweeney

Appl. Phys. Lett. 26, 616 (1975); http://dx.doi.org/10.1063/1.87998 (3 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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Holographic microinterferometry is used to study plasmas produced by high‐intensity subnanosecond pulses from a Nd laser. The probing pulse is frequency tripled to 3547 Å in order to reduce refractive errors due to steep density gradients and to reduce spatial resolution requirements. Measured electron densities as high as one‐fourth critical for 1.06 μm are presented. Factors concerning the extension of these measurement to 1021 electrons/cm3 are discussed.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.40.Kw Holographic interferometry; other holographic techniques

Table‐top Ar‐N2 laser

E. R. Ault

Appl. Phys. Lett. 26, 619 (1975); http://dx.doi.org/10.1063/1.87999 (2 pages) | Cited 19 times

Online Publication Date: 2 September 2008

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A compact Ar−N2 excitation transfer laser pumped by a coaxial electron gun is demonstrated. This laser emits a 40‐ns, 300‐kW pulse at a nominal repetition rate of 1 HZ. With 45 J of energy delivered to the electron gun, 12 mJ of laser output at 3577 Å is obtained. A 2.8% laser efficiency is estimated from simple electron deposition calculations, and the over‐all electrical efficiency is estimated to be 0.03%. Because the stored energy needed in previously reported Ar−N2 lasers has been reduced by more than an order of magnitude while maintaining a comparable laser energy output, this device represents a significant step forward in the study of high‐pressure electron‐beam‐pumped lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Threshold effects on relative intensities in LMM Auger spectra of Ge and Se

A. Barrie

Appl. Phys. Lett. 26, 621 (1975); http://dx.doi.org/10.1063/1.88000 (2 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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Relative intensities for Auger transitions involving 2p3/2 and 2p1/2 initial vacancies are found to be dependent upon incident photon energy. At higher photon energies, and when electron impact ionization is used, the statistical ratio of 2 : 1 is observed. In the region just above threshold (1.0<U<1.04), however, a higher ratio than expected is found and this is interpreted as being due to a rapidly increasing 2p subshell cross section.
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32.80.Fb Photoionization of atoms and ions
32.80.Hd Auger effect (including Coster-Krönig transitions)
79.20.Fv Electron impact: Auger emission
79.60.-i Photoemission and photoelectron spectra

Determination of saturated electron velocity in GaAs

B. Kramer and A. Mircea

Appl. Phys. Lett. 26, 623 (1975); http://dx.doi.org/10.1063/1.88001 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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The saturated electron velocity in GaAs is determined at 100 and 150 °C from a comparison of measured and calculated small‐signal impedance of IMPATT devices. The results are in good agreement with the values obtained by extrapolating Gunn effect theoretical calculations at higher fields, while the values used in previously published IMPATT design work were too high.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

Monte Carlo calculation of the velocity‐field relationship for gallium nitride

M. A. Littlejohn, J. R. Hauser, and T. H. Glisson

Appl. Phys. Lett. 26, 625 (1975); http://dx.doi.org/10.1063/1.88002 (3 pages) | Cited 97 times

Online Publication Date: 2 September 2008

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The Monte Carlo technique has been used to calculate the velocity‐field relationship for GaN. The calculation has included polar optical scattering, acoustic scattering, piezoelectric scattering, and ionized impurity scattering. The electron mobility has also been evaluated at low fields as a function of impurity concentration.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

Effective absorption for thermal blooming due to aerosols

C. H. Chan

Appl. Phys. Lett. 26, 628 (1975); http://dx.doi.org/10.1063/1.88003 (3 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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Thermal blooming on laser propagation due to the presence of aerosol particles is considered. Emphasis is placed on the derivation of an effective absorption coefficient αeff(t), where αeff(t) corresponds to that part of aerosol absorption which heats up the air only. Becuase of the small but nonvanishing heat capacity of the aerosol particles, air is not instantly heated resulting in a small time delay in thermal blooming.
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42.68.Wt Remote sensing; LIDAR and adaptive systems
42.25.Dd Wave propagation in random media
42.68.Ay Propagation, transmission, attenuation, and radiative transfer
42.68.Bz Atmospheric turbulence effects
82.70.Rr Aerosols and foams

Far‐infrared superradiant laser action in methyl fluoride

D. E. Evans, L. E. Sharp, B. W. James, and W. A. Peebles

Appl. Phys. Lett. 26, 630 (1975); http://dx.doi.org/10.1063/1.88004 (3 pages) | Cited 11 times

Online Publication Date: 2 September 2008

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Submillimeter laser pulses exceeding 1‐MW power have been generated superradiantly in CH3F gas pumped by 200 MW of 9.55‐μ CO2 TEA laser radiation. When far‐infrared output was restricted to operation on the 496 line alone, 0.5 MW was achieved within a bandwidth of 100 MHz.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Integrated grating‐type Schottky‐barrier photodetector with optical channel waveguide

Cheng‐Chung Tseng and Shyh Wang

Appl. Phys. Lett. 26, 632 (1975); http://dx.doi.org/10.1063/1.88005 (4 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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A grating‐type Schottky‐barrier photodetector has been incorporated within an optical channel waveguide. Silicon is used as the base material for future integration of optical and electronic components. The fabrication processes are simple and completely compatible with the standard silicon planar technology. Estimated responsivity of the detector is 0.33 μA/μW at a wavelength of 0.6328 μm with nanosecond response time.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.82.-m Integrated optics
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors

Spectroscopic investigation of the photorefractive recording and erasure process in LiNbO3 : Fe

H. Kurz and E. Krätzig

Appl. Phys. Lett. 26, 635 (1975); http://dx.doi.org/10.1063/1.88007 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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Photoinduced currents responsible for the photorefractive process in reduced and oxidized LiNbO3 : Fe crystals have been investigated in the spectral range between 1.5 and 4.0 eV. Optical erasure has also been studied by measuring the decay of a photoinduced phase grating during illumination with incoherent light. In comparison to optical absorption these spectra yield information on energy levels of photorefractive centers.
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72.40.+w Photoconduction and photovoltaic effects
78.20.Jq Electro-optical effects
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks

Diffusion kinetics and optical quality in LiNbO3‐LiTaO3 optical waveguides

G. Y. Chin, A. A. Ballman, P. K. Tien, and S. Riva‐Sanseverino

Appl. Phys. Lett. 26, 637 (1975); http://dx.doi.org/10.1063/1.88008 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Diffusivity measurements have been made at 1000, 1100, and 1200 °C on LiNbO3‐LiTaO3 single‐crystal thin films prepared by melt‐phase and liquid‐phase epitaxy. The interdiffusion coefficient is determined to be D∼5×10−7 exp[−40(kcal/mol)/RT] cm2 sec−1. In addition, we found substantial reduction in opitcal scattering after a diffusion anneal.
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42.79.Gn Optical waveguides and couplers
66.30.H- Self-diffusion and ionic conduction in nonmetals

GaAs electro‐optic channel‐waveguide modulator

J. C. Campbell, F. A. Blum, and D. W. Shaw

Appl. Phys. Lett. 26, 640 (1975); http://dx.doi.org/10.1063/1.88009 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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We describe a GaAs electro‐optic channel waveguide which can be used as a high‐speed modulator with a potential bandwidth of 1 GHz. A narrow Schottky‐barrier strip permits beam trapping to be controlled by an applied voltage. Ninety‐five percent amplitude modulation has been obtained with a minimum bandwidth of 150 MHz and a power requirement of <300 μW/MHz.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers

Avalanche buildup time of silicon avalanche photodiodes

T. Kaneda and H. Takanashi

Appl. Phys. Lett. 26, 642 (1975); http://dx.doi.org/10.1063/1.88010 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The avalanche buildup time in silicon n+‐p avalanche photodiodes is studied by a shot noise investigation. The avalanche buildup time t is given by t∼5×10−13M sec, where M is the multiplication factor.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Low‐divergence beams from grating‐coupled composite guide heterostructure GaAlAs diode lasers

R. D. Burnham, D. R. Scifres, and W. Streifer

Appl. Phys. Lett. 26, 644 (1975); http://dx.doi.org/10.1063/1.88011 (4 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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Room‐temperature operation of a new grating‐coupled heterostructure diode laser is reported. The laser contains two GaAs layers separated by a GaAlAs layer. One of the GaAs layers is electrically pumped, whereas the other is corrugated. Light is distributed over both layers and the grating couples out low‐divergence polarized beams approximately normal to the p‐n junction. Room‐temperature thresholds as low as 2 kA/cm2 have been observed.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Astigmatism and coma‐free prism dye ring laser

Gerd Marowsky

Appl. Phys. Lett. 26, 647 (1975); http://dx.doi.org/10.1063/1.88012 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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The characteristics of two prism ring lasers for cw operation have been experimentally studied. With improved compensation for aberrations due to astigmatism and coma, cw ring lasers operated in the traveling‐wave mode provide high output efficiency, stable narrow bandwidth in multimode and single‐mode operation, and a broad tuning range.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Low‐threshold cw LiNdP4O12 laser

S. R. Chinn and H. Y‐P. Hong

Appl. Phys. Lett. 26, 649 (1975); http://dx.doi.org/10.1063/1.88013 (3 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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We have studied cw room‐temperature lasing behavior of LiNdP4O12. A threshold of 360‐μW optical excitation power at 0.582‐μm wavelength was measured, with 18% power conversion efficiency to 1.048‐μm radiation at 1‐mW output. The crystal structure is found to be monoclinic (C2/c) rather than orthorhombic as previously reported.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
61.66.Fn Inorganic compounds
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