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1 Feb 1975

Volume 26, Issue 3, pp. 73-135

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Magnetoelastic Rayleigh wave convolver

William P. Robbins and Mark S. Lundstrom

Appl. Phys. Lett. 26, 73 (1975); http://dx.doi.org/10.1063/1.88075 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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An epoxy−bonded LiNbO3−YIG−LiNbO3 composite structure has been constructed and operated as a magnetoelastic Rayleigh wave convolver with 50−MHz input signals. The acoustic signals were propagated on a (110) YIG surface and the convolution characteristics were studied as a function of the magnitude and direction of the applied magnetic field. Nonuniform demagnetizing fields limited convolution pulses to less than 1.5 μsec duration. Relatively efficient operation was observed corresponding to an internal efficiency Fint of −53 dBm.
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43.60.+d Acoustic signal processing
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
75.80.+q Magnetomechanical effects, magnetostriction

SiO2 film overlays for temperature−stable surface acoustic wave devices

T. E. Parker and M. B. Schulz

Appl. Phys. Lett. 26, 75 (1975); http://dx.doi.org/10.1063/1.88076 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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Temperature−stable surface acoustic wave devices have been fabricated on YZ LiNbO3 and YZ LiTaO3 by the use of SiO2 film overlays. On LiNbO3, a temperature dependence similar to that of ST−cut quartz was obtained, but with a coupling constant k2 of at least 5.4%. On LiTaO3, a second−order temperature coefficient of delay that is 5 times smaller than and opposite in sign to that of ST quartz was observed. The coupling constant was measured to be approximately 1.6%.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
07.07.Mp Transducers
43.58.+z Acoustical measurements and instrumentation
72.50.+b Acoustoelectric effects

Redistribution of boron in silicon after high−temperature proton irradiation

Pierre Baruch, Joel Monnier, Bruno Blanchard, and Claude Castaing

Appl. Phys. Lett. 26, 77 (1975); http://dx.doi.org/10.1063/1.88077 (4 pages) | Cited 23 times

Online Publication Date: 2 September 2008

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We have measured the distribution of boron in silicon, using secondary ion mass spectroscopy or nuclear reactions, after irradiation at 850°C by protons of energy 250−450 keV. The fluence was 1×1017 to 6×1017 protons/cm2. Prediffused and uniformly doped samples have been studied. It is found that the boron distribution is considerably modified: the boron concentration shows a peak near the end of the proton range, where the defect creation rate is highest. This anomaly cannot be explained by using solely simple diffusion theory, and depends on boron−defect interactions, such as the formation of precipitates or complexes. As a consequence, the interpretations of radiation−enhanced diffusion experiments must be discussed again.
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61.80.Jh Ion radiation effects
61.80.Lj Atom and molecule irradiation effects
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Negative resistance in ion−implanted Al−Al2O3−Au junctions

Mikio Hirano, Shinya Kuriki, and Goro Matsumoto

Appl. Phys. Lett. 26, 80 (1975); http://dx.doi.org/10.1063/1.88078 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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Conduction has been investigated in Al−Al2O3−Au sandwiches whose oxide is implanted with O or Al ions. The results reveal that ion implantation gives a junction type which can be electroformed, and which exhibits negative resistance in air at atmospheric pressure.
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73.40.Rw Metal-insulator-metal structures
61.72.U- Doping and impurity implantation

C−V analysis of a partially depleted semiconducting channel

Kurt Lehovec

Appl. Phys. Lett. 26, 82 (1975); http://dx.doi.org/10.1063/1.88088 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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C−V analysis applied to a depletion layer bordering a semiconducting channel does not provide the true impurity distribution if the space−charge region penetrates to another depletion layer at the other side of the channel, i.e., if the channel is partially depleted. Cases in point are an epitaxial semiconducting channel on a semi−insulating chromium−doped gallium arsenide substrate; an n−channel on a p−substrate; and a heterojunction of a semiconducting epitaxial layer on an insulating substrate with interface states causing depletion.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions

Heterojunction formation using amorphous materials

B. Dunn, J. D. Mackenzie, J. K. Clifton, and J. V. Masi

Appl. Phys. Lett. 26, 85 (1975); http://dx.doi.org/10.1063/1.88089 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Heterojunctions have been fabricated by depositing glass films onto single−crystal silicon substrates. Junction behavior has been exhibited regardless of the electrical or chemical properties of the glass film. The observed characteristics are a function of these properties. Current rectification, variable capacitance, sharp reverse breakdown, and photovoltaic responses have been observed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ng Disordered solids

Resonance self−absorption in CO lasers

W. B. Lacina and G. L. McAllister

Appl. Phys. Lett. 26, 86 (1975); http://dx.doi.org/10.1063/1.88090 (4 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Resonance self−absorption from overlapping lines in a CO laser medium may be an important pressure−dependent mechanism for theoretical analysis, with possible impact on line selection and atmospheric propagation. Certain presently unexplained discrepancies relating to transient time scale, spectral anomalies, efficiency degradation, and sensitivity to temperature might all be consistently resolved by this hypothesis.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.50.-p Quantum optics

Energy velocity and effective gain in distributed−feedback lasers

Shyh Wang

Appl. Phys. Lett. 26, 89 (1975); http://dx.doi.org/10.1063/1.88091 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Here, we establish a relation G = gv/vE between the effective gain coefficient G in a periodic medium (for a Bloch wave) and the ordinary gain coefficient g in a corresponding uniform medium (for an ordinary plane wave). In distributed−feedback (DFB) lasers, G is greater (or smaller) than g because the energy velocity vE of a Bloch wave is smaller (or greater) than the phase velocity v of a plane wave. The relation between G and g can be regarded as a first principle for DFB lasers. We can use this principle to test the validity of a DFB−laser theory and to guide us to a correct interpretation of the theoretic result.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.50.-p Quantum optics

Picosecond response of a high−repetition−rate CS2 optical Kerr gate

E. P. Ippen and C. V. Shank

Appl. Phys. Lett. 26, 92 (1975); http://dx.doi.org/10.1063/1.88092 (2 pages) | Cited 66 times

Online Publication Date: 2 September 2008

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An optical Kerr gate is operated at high repetition rates using picosecond pulses from a mode−locked cw laser. A new mode of gate operation is demonstrated in which incremental transmission is linearly proportional to pump power. Direct temporal measurement of a 2.1−psec response time of the optical Kerr effect in CS2 is reported.
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85.60.-q Optoelectronic devices
78.20.Jq Electro-optical effects
42.62.-b Laser applications

Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices

P. C. Arnett and B. H. Yun

Appl. Phys. Lett. 26, 94 (1975); http://dx.doi.org/10.1063/1.88093 (3 pages) | Cited 87 times

Online Publication Date: 2 September 2008

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Previous charge−centroid studies of MNOS devices have shown that electrons injected into the insulator structure from the silicon are trapped not solely at the dielectric interface, but can be distributed over nearly the entire nitride thickness. In this paper, results of charge−centroid measurements on thin−oxide MNOS devices are interpreted with a charge trapping model, leading to values for the nitride trap density, capture cross section, and average trapping distance of 6×1018/cm3, 5×10−13 cm2, and 35 Å, respectively.
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85.30.De Semiconductor-device characterization, design, and modeling
73.61.Ng Insulators
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Quasistatic and transient threshold switching in amorphous semiconductors

D. D. Thornburg

Appl. Phys. Lett. 26, 96 (1975); http://dx.doi.org/10.1063/1.88094 (4 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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Measurements on thin−film sandwich structure devices using several amorphous chalcogenides have shown that either current−controlled negative differential resistance (CNDR) or threshold switching (TS) phenomena can be displayed under quasistatic bias conditions, depending on whether the amorphous semiconductor is coextensive with or extends beyond the boundary of the top electrode. While the phenomena under these conditions result primarily from bulk thermal processes, transient pulse experiments on CNDR devices have shown that, for sufficiently fast−rise−time pulses, thermal CNDR can be suppressed and sufficient fields can be applied to initiate electronic TS behavior.
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72.80.Ng Disordered solids
72.20.Ht High-field and nonlinear effects

A dispersive modulator

Michael M. T. Loy

Appl. Phys. Lett. 26, 99 (1975); http://dx.doi.org/10.1063/1.88095 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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Amplitude modulation and temporal compression of 10−μ light at a frequency up to 80 MHz were demonstrated using a dispersive molulator—a NH3 vapor cell with a near−resonant time−dependent transition frequency controlled externally via the Stark effect. The peak output intensity was observed to be higher than the input intensity, showing that compression effects due to the time−dependent dispersion are essential in determining the output waveform.
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42.79.Hp Optical processors, correlators, and modulators
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond optoelectronic switching and gating in silicon

D. H. Auston

Appl. Phys. Lett. 26, 101 (1975); http://dx.doi.org/10.1063/1.88079 (3 pages) | Cited 207 times

Online Publication Date: 2 September 2008

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Quasimetallic photoconductivity produced by the absorption of picosecond optical pulses in silicon transmission line structures has been used to devise electronic switches and gates which can be turned on and off in a few picoseconds. Electrical signals as large as 100 V can be switched by a few microjoules of optical energy. The switching speed was measured by correlating the response of two transmission gates in tandem, each having an aperture time of 15 psec.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.60.-q Optoelectronic devices

Isotope separation by optically pumped ionizing collisions

S. E. Harris and D. B. Lidow

Appl. Phys. Lett. 26, 104 (1975); http://dx.doi.org/10.1063/1.88080 (2 pages)

Online Publication Date: 2 September 2008

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We propose a modification of the selective two−step photoionization technique which greatly improves its efficiency. A third species with a strong resonance transition is added to the mix of isotopes which it is desired to separate. Incident optical energy is radiatively and collisionally trapped in this catalytic species. Selective ionization of excited step one species is accomplished by long−range ionizing collisions.
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32.10.Bi Atomic masses, mass spectra, abundances, and isotopes
32.80.Fb Photoionization of atoms and ions
32.80.Hd Auger effect (including Coster-Krönig transitions)
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)

Observation of coherent anti−Stokes Raman scattering from liquid water

Irving Itzkan and Donald A. Leonard

Appl. Phys. Lett. 26, 106 (1975); http://dx.doi.org/10.1063/1.88081 (3 pages) | Cited 23 times

Online Publication Date: 2 September 2008

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The line shape of the coherent anti−Stokes (CAS) Raman band at 3200 cm−1 in liquid water has been measured using two independent but synchronized pulsed nitrogen laser pumped dye lasers as excitation sources. The observed CAS spectral shape differs significantly from the corresponding classical Stokes Raman profile and can be explained by coherent interference between the resonant and nonresonant scattering. Such effects are important in CAS applications involving aqueous media and in other situations such as high−temperature gases, i.e., T≳1000 °K, where the Raman resonance is significantly broadened.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.50.-p Quantum optics
78.30.C- Liquids

A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrate

Haruo Nagai and Yoshio Noguchi

Appl. Phys. Lett. 26, 108 (1975); http://dx.doi.org/10.1063/1.88082 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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A small amount of P has been added to a Ga−In−As melt for liquid phase epitaxial growth of GaxIn1−xAs on GaAs substrate. By this technique, GaxIn1−xAs layers of low etch−pit density and wide composition range have been grown on GaxIn1−xAsyP1−y continuously graded composition layers.
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68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Different bonding states of Cs and O on highly photoemissive GaAs by flash−desorption experiments

Bernard Goldstein and Daniel Szostak

Appl. Phys. Lett. 26, 111 (1975); http://dx.doi.org/10.1063/1.88083 (3 pages) | Cited 27 times

Online Publication Date: 2 September 2008

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The thermal desorption of Cs and O from GaAs/Cs/O activated to negative electron affinity occurs as atomic Cs133 and (mostly) Ga2O. Flash−desorption experiments show that several bonding states exist for the adsorbed Cs which correlate with changes in work function. For example, (i) the Cs bonding state for GaAs/Cs changes when the Cs coverage exceeds that required for maximum photoemission, and (ii) the distribution of bonding states for Cs shifts markedly to higher energies as the GaAs surface passes from unactivated (GaAs/Cs) to activated (GaAs/Cs/O).
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Cg Contact resistance, contact potential
71.90.+q Other topics in electronic structure (restricted to new topics in section 71)

Pulsed ion lasers excited by the pinch effect

J. Katzenstein and R. H. Lovberg

Appl. Phys. Lett. 26, 113 (1975); http://dx.doi.org/10.1063/1.88084 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Previous experimental work has demonstrated strong laser action on the ionized lines of argon and xenon in pinch discharges in these gases. This laser action is correlated in time with the minimum contraction of the discharge. The laser output power, however, was found to saturate with bank voltage, and to be maximized at a critical initial filling pressure. These phenomena, obtained empirically in the initial work, can be shown to be the consequences of a generalized impedance matching problem, and hence correspond to the optimization of the transfer of stored bank energy to the pinched plasma. Thus, rational scaling laws can be derived for this type of laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.80.-s Electric discharges

A new model for the negative voltage instability in MOS devices

D. J. Breed

Appl. Phys. Lett. 26, 116 (1975); http://dx.doi.org/10.1063/1.88085 (3 pages) | Cited 16 times

Online Publication Date: 2 September 2008

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In this letter it will be shown first that ’’hole trapping’’ is generally measured in such a way that the effect is only partly observed. Second, a new physical model is presented that explains this instability of the oxide charge in terms of a thermally assisted tunneling process, where electrons in neutral oxide centers are excited to states from which the electrons can tunnel to the silicon.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling

Power increase of N2 uv and ir lasers by addition of SF6

Colin S. Willett and Daniel M. Litynski

Appl. Phys. Lett. 26, 118 (1975); http://dx.doi.org/10.1063/1.88086 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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The output power and energy per pulse of transversely excited (TE) nitrogen lasers operating well over threshold on the 0.3371−μm transition in the C3Πu−B3Πg second positive system, and on near−infrared transitions in the B3Πg−A3Σ+u first positive system, have been found to be increased by more than 100% with the addition of SF6 compared with those obtainable from N2 alone. It is hypothesized that the increase in power results from a modification of the electron energy distribution by the SF6 or discharge products of SF6, to one that favors more efficient excitation of the C3Πu and B3Πg states of molecular nitrogen.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

Measurement of the diffusion coefficient of electrons in WO3 films

Richard S. Crandall and Brian W. Faughnan

Appl. Phys. Lett. 26, 120 (1975); http://dx.doi.org/10.1063/1.88087 (2 pages) | Cited 40 times

Online Publication Date: 2 September 2008

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Measurements of the electron diffusion coefficient in amorphous films of tungsten oxide give a value of D=0.0025±0.0006 cm2 sec−1. D decreases by less than a factor of 2 between +40 and −20 °C.
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72.80.Ng Disordered solids
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
82.45.-h Electrochemistry and electrophoresis

A deep center associated with the presence of nitrogen in GaP

B. L. Smith, T. J. Hayes, A. R. Peaker, and D. R. Wight

Appl. Phys. Lett. 26, 122 (1975); http://dx.doi.org/10.1063/1.88069 (3 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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The deep−level thermal activation energy spectrum of N−doped liquid−phase−epitaxial (LPE) and liquid−encapsulated−Czochralski (LEC) −grown GaP has been investigated using Schottky barrier thermally stimulated−current (TSC) measurements. We detect a center at Ec−Et=0.42 eV whose presence in the lattice depends on the deliberate addition of N to the material. The concentration of this center varies approximately as (Nd−Na)2 in n−type material, and the value of electron capture cross section for the center (St≈7×10−15 cm2) indicates that it could be a strong recombination center in N−doped p−type GaP. Separate experiments suggest that this center is strongly localized, and that it is not a simple complex involving shallow donors and native defects.
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78.40.Fy Semiconductors

Connections and disconnections on integrated circuits using nanosecond laser pulses

P. W. Cook, S. E. Schuster, and R. J. von Gutfeld

Appl. Phys. Lett. 26, 124 (1975); http://dx.doi.org/10.1063/1.88070 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Nanosecond pulses from a focused nitrogen pumped dye laser have been used to connect and disconnect conductors on FET chips. Experiments on connections between n+ diffusion layers and aluminum, separated by an insulating layer of SiO2, show promise for high yield and reliability. The connections have Ohmic characteristics. Sectioned laser connections were examined with an electron microprobe and microscope in order to examine physical details of the connection process.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
85.30.Tv Field effect devices
84.32.Dd Connectors, relays, and switches
42.62.-b Laser applications

Temperature dependence of the exchange constant in magnetic−bubble materials

R. D. Enoch, M. E. Jones, and D. G. P. Waters

Appl. Phys. Lett. 26, 127 (1975); http://dx.doi.org/10.1063/1.88071 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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A recent theory has related, through their different Curie temperatures, the exchange constant of an epitaxial garnet film to that of pure YIG at the same temperature. We have experimentally determined the exchange constants A of a SmGa:YIG and of a EuGa:YIG epitaxial garnet film from anisotropy and domain wall energy measurements in the range −30 to 120°C. Despite comparable Curie temperatures, the variation of A with temperature in the two compositions showed a markedly different behavior, which would not be expected from the theoretical model. There is reasonable agreement with the behavior of EuGa:YIG, but not for that of SmGa:YIG or of three other compositions whose exchange constants have been obtained from data in the literature.
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75.30.Et Exchange and superexchange interactions
75.60.Ch Domain walls and domain structure

Low−field magnetic properties of ferromagnetic amorphous alloys

T. Egami, P. J. Flanders, and C. D. Graham

Appl. Phys. Lett. 26, 128 (1975); http://dx.doi.org/10.1063/1.88072 (3 pages) | Cited 53 times

Online Publication Date: 2 September 2008

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The low−field magnetic properties of some amorphous magnetic alloy ribbons have been measured. The as−prepared specimens have low coercive field but rather low remanence. The application of elastic stress greatly increases the remanence, and can also decrease the coercive field. Some of the improvement due to stress can be made permanent by annealing under stress. These alloys should be useful in various magnetic devices.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.80.+q Magnetomechanical effects, magnetostriction
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