APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Feb 1975

Volume 26, Issue 4, pp. 137-212

Page 1 of 2 Pages Next Page | Jump to Page

Zinc oxide on silicon memory cells scanned by acoustic surface waves

L. A. Coldren

Appl. Phys. Lett. 26, 137 (1975); http://dx.doi.org/10.1063/1.88119 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The use of parametrically mixed acoustic surface waves to remotely scan and process the contents of zinc−oxide−on−silicon charge storage cells is demonstrated. The write, erase, and store characteristics of the memory cells are investigated. The signal−processing capability of the device is illustrated by the correlation of a line of stored information with a biphase coded input signal.
Show PACS
84.60.Ve Energy storage systems, including capacitor banks
72.50.+b Acoustoelectric effects

High−performance acousto−optic guided−light−beam device using two tilting surface acoustic waves

C. S. Tsai, Le T. Nguyen, S. K. Yao, and M. A. Alhaider

Appl. Phys. Lett. 26, 140 (1975); http://dx.doi.org/10.1063/1.88120 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
An acousto−optic guided−light−beam device utilizing two surface acoustic wave interdigital transducers, which are staggered in their center frequency and tilted in their propagation direction, on an essentially single−mode optical guiding layer of a Y−cut LiNbO3 substrate has been shown to be capable of providing a very wide bandwidth. Deatiled measurements on the diffraction efficiency and the deflection angle of the light beam versus the frequency of the driving signal, usign a 6328−Å He−Ne laser light, are presented. The measured −3 dB bandwidth of the device is close to 200 MHz, which is more than an order of magnitude larger than that obtained in previous devices, with the measured electric driving power of 200 mW at 50% diffraction efficiency. The new device configuration introduced here should be very useful for wide−band applications such as a guided−wave acousto−optic rf spectrum analyzer and high−speed multiport switches for fiber/integrated optics.
Show PACS
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.81.-i Fiber optics

Storage of optical patterns in a zinc−oxide−on−silicon surface wave convolver

K. L. Davis

Appl. Phys. Lett. 26, 143 (1975); http://dx.doi.org/10.1063/1.88097 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
A monolithic zinc−oxide−on−silicon surface wave convolver has been used to image optical patterns and store them for long periods of time. A light pattern is stored by projecting it onto a semitransparent top convolver electrode which has an applied negative dc bias. Slow states associated with the zinc oxide are charged in the regions exposed to the light. This charge pattern, as observed using surface wave convolution, persists even when the light is removed. Retention of the pattern for several days has been demonstrated with this device.
Show PACS
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks

Ion effects in relativistic diodes

J. W. Poukey

Appl. Phys. Lett. 26, 145 (1975); http://dx.doi.org/10.1063/1.88121 (2 pages) | Cited 34 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
In relativistic diodes, ions are emitted from the anode plasma surface. The space charge of these ions enhances the electron emission. One−dimensional analysis and two−dimensional computer simulation are used to show the necessity of including this effect in any realistic diode theory.
Show PACS
52.27.Ny Relativistic plasmas
52.65.-y Plasma simulation

Analysis of surface layers by the channeling technique: Beam energy dependence

G. Della Mea, A. V. Drigo, S. Lo Russo, P. Mazzoldi, S. Yamaguchi, and G. G. Bentini

Appl. Phys. Lett. 26, 147 (1975); http://dx.doi.org/10.1063/1.88098 (4 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The surface peak of the channeling energy spectrum has been investigated as a function of energy of the incident beam. An increase of the surface peak value with energy has been observed for axial channeling in silicon 〈110〉, germanium 〈111〉, molybdenum 〈111〉, and vanadium 〈100〉 and 〈110〉 crystals with low surface contamination. The influence of oxide layers on the energy dependence effect has been investigated on silicon crystals.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.-d Chemical analysis and related physical methods of analysis

Contributions of multiphoton absorption to laser−induced intrinsic damage in NaCl

P. Bräunlich, A. Schmid, and Paul Kelly

Appl. Phys. Lett. 26, 150 (1975); http://dx.doi.org/10.1063/1.88122 (4 pages) | Cited 26 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Intrinsic damage of NaCl upon exposure to intense laser pulses is discussed in terms of electron kinetic processes. Avalanche ionization is confirmed to be the dominant mechanism at the ruby frequency. However, compared to pure avalanche breakdown, both five−photon absorption and, to a lesser extent, the presence of F centers reduce the damage threshold by providing a large concentration of free carriers at the onset of avalanche ionization. Three−photon absorption contributes extensively to damage at the doubled ruby frequency. The dependence of the damage threshold on the laser pulse length is calculated and it is shown that its measurement can provide information on the role of multiphoton absorption in the damage process. At a given wavelength multiphoton contributions become increasingly more important as the laser pulse length decreases.
Show PACS
79.20.Ds Laser-beam impact phenomena
61.72.jn Color centers
63.20.K- Phonon interactions

Influence of implanted dose on the recrystallization of Si amorphous layer

P. Baeri, S. U. Campisano, G. Ciavola, G. Foti, and E. Rimini

Appl. Phys. Lett. 26, 154 (1975); http://dx.doi.org/10.1063/1.88123 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The channeling effect technique has been used to investigate the annealing of the ’’amorphous’’ layer produced in Si by 40−keV Pb implants with fluences ranging between 5×1013 and 5×1015 ions/cm2. The amount of residual disorder, after an anneal of 30 min at 650 °C, shows a dose dependence and increases strongly with Pb fluence, thus indicating the influence of the dissolved lead atoms in the recrystallization process.
Show PACS
61.72.U- Doping and impurity implantation
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.43.Fs Glasses
61.43.-j Disordered solids

Theory of the dispersive modulator

D. Grischkowsky and M. M. T. Loy

Appl. Phys. Lett. 26, 156 (1975); http://dx.doi.org/10.1063/1.88124 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The recent observations by Loy of amplitude modulation and compression of infrared laser pulses caused by passage through the dispersive modulator (a cell containing dilute NH3 vapor with a Stark−modulated resonant frequency) are explained. It is shown that there is a formal equivalence between (i) the passage of a near−resonant light beam through a vapor with a time−dependent resonant frequency, and (ii) the passage of a frequency−modulated light beam through a vapor with a constant resonant frequency. For low−intensity light this equivalence reduces the problem to the optical analog of chirp radar.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Porous−wall BeO capillary waveguide laser

A. Papayoanou and A. Fujisawa

Appl. Phys. Lett. 26, 158 (1975); http://dx.doi.org/10.1063/1.88125 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Small−bore capillary tubes exhibit very high optical gains and saturation intensities in flowing gas CO2 systems. However, these parameters may vary greatly in the axial direction due to the nonuniform axial pressure distribution. Use of porous−wall BeO capillary tubes makes it possible to attain a more uniform pressure distribution and to usefully scale capillary waveguide amplifiers to longer lengths.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.-p Quantum optics

Structural defect thermoelectric power in thin copper films

A. P. Thakoor, Ritu Suri, S. K. Suri, and K. L. Chopra

Appl. Phys. Lett. 26, 160 (1975); http://dx.doi.org/10.1063/1.88099 (3 pages) | Cited 11 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Thermoelectric power and electrical resistivity of thin (<1000 Å) copper films annealed at different temperatures have been studied. The data have been utilized to obtain the contribution to thermoelectric power by the structural defects in the films. This contribution is comparable in magnitude to the bulk value. It increases with film thickness giving rise to a strong thickness dependence of thermoelectric power at thicknesses considerably larger than the mean free path of the conduction electrons.
Show PACS
73.61.At Metal and metallic alloys
72.15.Jf Thermoelectric and thermomagnetic effects

cw Raman fiber amplifier

J. Stone

Appl. Phys. Lett. 26, 163 (1975); http://dx.doi.org/10.1063/1.88100 (3 pages) | Cited 28 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
cw Raman amplification has been observed in a hollow fused silica fiber, inside diameter 5 μm, 5 m long, filled with benzene. Using a krypton laser pump, amplification of the 992−cm−1 Stokes Raman line has been obtained at pump wavelengths 5682, 6471, and 7525 Å. The pump powers determined by measuring the slightly attenuated output from the fiber were 17, 25, and 17 mW, respectively. The corresponding amounts of power in the input laser pump before the launching optics were 70, 85, and 75 mW.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.81.-i Fiber optics

Metal reflectivity under high−intensity optical radiation

T. E. Zavecz, M. A. Saifi, and M. Notis

Appl. Phys. Lett. 26, 165 (1975); http://dx.doi.org/10.1063/1.88101 (4 pages) | Cited 26 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Single high−intensity (106−109 W/cm2) pulses of 1.06−μ radiation emitted from a Q−switched Nd : YAG laser have been used to study reflectivity behavior of single−crystal copper and tantalum samples. Metal reflectivity during irradiation undergoes a significant drop to values much lower than can be attributed to high−temperature effects. This reflectivity drop under high radiation intensity has two characteristic features. First, if vaporization is avoided, then during the rising portion of the laser pulse the reflectivity drops continuously until it reaches a constant low value. For copper this occurs at an intensity of 3×108 W/cm2 and has a reflectivity value of ≈0.64. The corresponding values for tantalum are I≈2.5×107 W/cm2 and R≈0.41. For still higher intensities a further drop in reflectivity beyond the plateau region is observed. This drop in reflectivity is always accompanied by heavy melting and followed by some vaporization. As suggested by Prokhorov et al. this further drop in reflectivity could be associated with dielectriclike behavior of the molten zone.
Show PACS
79.20.Ds Laser-beam impact phenomena
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Induced focusing and defocusing of optical beams via a Raman−type nonlinearity

Adelbert Owyoung

Appl. Phys. Lett. 26, 168 (1975); http://dx.doi.org/10.1063/1.88102 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Using a 5.7−MW single−mode ruby laser pulse at an intensity of 100 MW/cm2 through a 10−cm−long cell of benzene, we report the experimental observation of the induced focusing and defocusing of an externally generated Stokes probe beam on the high− and low−frequency side of the 992−cm−1 Raman line, respectively. This observation gives direct evidence of the dispersion in the real part of the nonlinear susceptibility tensor χ3 in the vicinity of a Raman mode.
Show PACS
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.50.-p Quantum optics

Metallization scheme for n−GaAs Schottky diodes incorporating sintered contacts and a W diffusion barrier

A. K. Sinha

Appl. Phys. Lett. 26, 171 (1975); http://dx.doi.org/10.1063/1.88103 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Using Schottky barrier measurements on n−GaAs diodes metallized with Au/W and Pt/W films, we have shown that thin films of W (∼3000 Å) offer an excellent barrier to diffusion of both Au and Pt atoms at temperatures up to 500 °C. These properties of W are utilized in a Schottky barrier metallization scheme consisting of Au/W/(PtGa/PtAs2)/n−GaAs, where (a) the thin sintered Pt layer provides a large ϕB (due to PtAs2 at the GaAs interface) and a metallurgically stable conductor−semiconductor interface, (b) the W layer acts as a diffusion barrier, and (c) the outer Au layer provides thermocompression bondability.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
66.30.J- Diffusion of impurities
85.30.Hi Surface barrier, boundary, and point contact devices

Electron−hole pair creation energy in SiO2

G. A. Ausman and F. B. McLean

Appl. Phys. Lett. 26, 173 (1975); http://dx.doi.org/10.1063/1.88104 (3 pages) | Cited 50 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The average energy W required to create an electron−hole pair in SiO2 has been determined to be approximately 18 eV by considering the energy loss of fast electrons in solids. This energy loss occurs primarily by plasmon production and subsequent decay of the plasmons into electron−hole pairs. It is also demonstrated that recent data on electron−irradiated SiO2 films can be explained remarkably well by a columnar recombination model. The extrapolation to infinite electric field of the columnar model fit to the data yields a value for W which is in excellent agreement with the value obtained from the energy loss calculation.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

A novel technique for measuring small absorption coefficients in semiconductor infrared laser window materials

A. V. Nurmikko

Appl. Phys. Lett. 26, 175 (1975); http://dx.doi.org/10.1063/1.88105 (4 pages) | Cited 2 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
A novel technique for measuring small absorption coefficients in semiconductor infrared laser window materials is presented. The method consists of optically measuring small shifts at the fundamental absorption edge when a thin sample wafer is heated by an incident laser beam. Experimental results are presented for CdTe. The technique is simple and sensitive; it offers several advantages over methods of standard laser calorimetry.
Show PACS
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Enhanced crystallinity of silicon film deposited at low temperature

Chin−An Chang, Wigbert J. Siekhaus, Thomas Kaminska, and Donald Tai−Chan Huo

Appl. Phys. Lett. 26, 178 (1975); http://dx.doi.org/10.1063/1.88106 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Silicon thin films were vacuum deposited onto fused quartz at 600 °C with a prior coating of ultrathin aluminum layer (∼ 500 Å). Significant increase in crystallinity was observed from both x−ray diffraction and transmission electron microscopy studies. The problem of handling aluminum film at this temperature in a vacuum of 1×10−6 Torr is discussed, and distribution of aluminum in the silicon film is studied using Auger spectroscopy.
Show PACS
68.55.-a Thin film structure and morphology
81.20.-n Methods of materials synthesis and materials processing

Thermal oxidation of GaAs

S. P. Murarka

Appl. Phys. Lett. 26, 180 (1975); http://dx.doi.org/10.1063/1.88107 (2 pages) | Cited 45 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Thermal oxidation of GaAs has been carried out at 500 °C in air. Uniform amorphous oxide films as thick as 3.4 μm were grown. This oxide, which adheres well to the substrate and can be etched off in hydrochloric acid, shows promise as a masking oxide for GaAs.
Show PACS
81.65.Kn Corrosion protection
81.20.-n Methods of materials synthesis and materials processing

Multiple storage and erasure of fixed holograms in Fe−doped LiNbO3

D. L. Staebler, W. J. Burke, W. Phillips, and J. J. Amodei

Appl. Phys. Lett. 26, 182 (1975); http://dx.doi.org/10.1063/1.88108 (3 pages) | Cited 95 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Holograms were recorded and fixed simultaneously in heated (∼160°C) crystals of Fe−doped LiNbO3. With this procedure the crystals have the erase/write asymmetry required for multiple storage of high−diffraction−efficiency holograms. Five hundred fixed holograms, each with more than 2.5% diffraction efficiency, were recorded.
Show PACS
42.40.Kw Holographic interferometry; other holographic techniques
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks

Optical aging characteristics of borosilicate clad fused silica core fiber optical waveguides

I. Camlibel, D. A. Pinnow, and F. W. Dabby

Appl. Phys. Lett. 26, 185 (1975); http://dx.doi.org/10.1063/1.88109 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Very low transmission loss fiber optical waveguides have been developed during the past two years which have pure fused silica cores surrounded by borosilicate glass claddings. A recent study of the binary borosilicate glass system revealed that the low refractive index values which can be achieved with this glass and which are essential for the fiber cladding application occur only when the glass is quenched. Annealing causes the refractive index to increase to a less acceptable value. Although fibers are naturally quenched during drawing, there is a legitimate concern that the cladding might spontaneously anneal at its operating temperature in an unacceptably short time. The details of the annealing time−temperature relationship are determined in the present work and effective lifetimes for borosilicate clad fibers are predicted. It is concluded that lifetimes in excess of 100 years should be expected if the fiber operating temperature does not exceed 60 °C.
Show PACS
42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics

Observation of laser action in CO gas excited only by fission fragments

D. A. McArthur and P. B. Tollefsrud

Appl. Phys. Lett. 26, 187 (1975); http://dx.doi.org/10.1063/1.88110 (4 pages) | Cited 35 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
We report the first clear observation of laser action in a medium excited only by fission fragments. CO gas at 77 °K and pressure ≈100 Torr was excited by fission fragments from enriched 235U3O8 foils, which were irradiated with neutrons from a fast−burst reactor. The laser signal was ≳103 times the fluorescence signal, disappeared if the laser output mirror was misaligned, and had a very sharp onset and fall. The measured laser pulse energy was 10 times the maximum possible fluorescence energy.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.50.-k Fission reactor types

Double−discharge arrangement for cw electrical excitation of supersonic flows

J. H. Blom and R. K. Hanson

Appl. Phys. Lett. 26, 190 (1975); http://dx.doi.org/10.1063/1.88111 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
A simple double−discharge electrode arrangement for the cw excitation of supersonic molecular gas flows is described. Stable discharges in N2 and N2/CO mixtures, with E/N of 2.0−2.5×10−16 V cm2 and a power loading of 2.6×10−2 eV/molecule, were achieved.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
47.40.Ki Supersonic and hypersonic flows
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.80.-s Electric discharges

Aerosol size spectrum analysis using relaxation time measurement

K. J. Kirsch and M. K. Mazumder

Appl. Phys. Lett. 26, 193 (1975); http://dx.doi.org/10.1063/1.88112 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
An experimental method has been developed to measure the dynamic relaxation times of aerosol particles. The particle relaxation time (τp) is determined from the ratio of the velocity amplitude of an aerosol particle (vp) to the velocity amplitude of the medium (ug) while the aerosol is subjected to acoustic excitation of a known frequency. A differential laser Doppler velocimeter is used to measure vp, while a microphone is used to measure ug. From the value of τp, the aerodynamic diameter of the particle can be determined if the particle density is known. The method can be applied to real−time in situ measurement of size distribution of an aerosol containing both solid particles and liquid droplets in the range of 0.1−10.0−μm diameters.
Show PACS
82.70.Rr Aerosols and foams
43.58.+z Acoustical measurements and instrumentation

On etching very narrow grooves in silicon

Don L. Kendall

Appl. Phys. Lett. 26, 195 (1975); http://dx.doi.org/10.1063/1.88113 (4 pages) | Cited 50 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The etch rate on the {110} is shown to be at least 400 times faster than that on the {111} using 44% KOH : H2O at a temperature of 85 °C and below. A model is presented which attributes essentially all the etching on the near {111} planes to the misorientation ledges. Grooves of 0.6−μm width and 44−μm depth have been produced. Such grooves have been used to make high−value SiO2 capacitors and vertical multijunction solar cells.
Show PACS
81.65.Cf Surface cleaning, etching, patterning
81.65.Ps Polishing, grinding, surface finishing

The effects of degeneracy on doping efficiency for n−type implants in GaAs

J. F. Gibbons and R. E. Tremain

Appl. Phys. Lett. 26, 199 (1975); http://dx.doi.org/10.1063/1.88114 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The effect of degeneracy on doping efficiency for n−type implants in GaAs is computed by assuming the donor energy level to be coincident with the bottom of the conduction band. For such a case the Fermi level will always lie in the conduction band, and as a result the sheet carrier concentration can be substantially less than the implanted dose. Computations are given which show that peak carrier concentrations cannot readily exceed ∼5×1018/cm3 and doping efficiency (as conventionally measured) can be as low as 5−10% under common implantation conditions.
Show PACS
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close