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1 Mar 1975

Volume 26, Issue 5, pp. 215-260


Phase−matching condition for scattering from acoustic surface reflective arrays

O. W. Otto

Appl. Phys. Lett. 26, 215 (1975); http://dx.doi.org/10.1063/1.88126 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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A phase−matching condition for scattering from acoustic surface reflective arrays is derived with velocity slowing of the reflective stripes taken into account. Propagation in a periodic region is described in terms of waves with sawtooth−shaped phase fronts. Stored energy is proposed as a mechanism for altering the effective velocity anisotropy between incident and scattered waves. The theory is tested against measured transmission resonances for metallic (Al) gratings on Y−cut LiNbO3.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.20.+g General linear acoustics

Effects of flow in aerosol measurements by laser Doppler spectroscopy and its nullification

N. Ben−Yosef, A. Weitz, and H. Yinnon

Appl. Phys. Lett. 26, 218 (1975); http://dx.doi.org/10.1063/1.88127 (3 pages)

Online Publication Date: 2 September 2008

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It is shown that the current autocorrelation function of scattered light from aerosols situated in gas that has macroscopic motion will be strongly affected. The exact autocorrelation function for steady flow is calculated. Experimental results verify the calculated results. Using the measured results and the calculated function one can find the single−particle correlation function and the diffusion coefficient.
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82.70.Rr Aerosols and foams
47.57.-s Complex fluids and colloidal systems
42.25.Dd Wave propagation in random media

Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope 10B in Si

Y. Ohmura and K. Koike

Appl. Phys. Lett. 26, 221 (1975); http://dx.doi.org/10.1063/1.88128 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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It has been observed by C−V measurements that randomly implanted 10B has shallower profiles in Si than 11B for the acceleration energy range from 50 to 200 keV. This effect can be explained only in terms of electronic stopping in LSS’s theory.
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61.72.U- Doping and impurity implantation
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Starting times of laser−induced intrinsic damage in NaCl

Paul Kelly, P. Bräunlich, and A. Schmid

Appl. Phys. Lett. 26, 223 (1975); http://dx.doi.org/10.1063/1.88129 (4 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The starting time for laser−induced intrinsic damage in NaCl is calculated as a function of the rms optical field strength at the peak of the laser pulse. Three different damage mechanisms are considered: (i) avalanche ionization for λ⩾1 μ, (ii) five−photon assisted avalanche ionization at λ=0.694 μ, and (iii) three−photon assisted avalanche ionization at λ=0.347 μ. It is shown that the probability to measure the true damage threshold E∗th is zero. (E∗th is the optical peak field strength of a laser pulse that heats a small sample volume so that the melting point is reached exactly at the end of the pulse.) For this reason a ’’practical’’ damage threshold E∗T is defined which is the peak field strength of a pulse that causes damage by melting at the time the laser flux reaches its peak.
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79.20.Ds Laser-beam impact phenomena

A thermal imaging system based on the PrCl3 quantum counter

J. R. Herrington, K. G. Sewell, and W. B. Volz

Appl. Phys. Lett. 26, 226 (1975); http://dx.doi.org/10.1063/1.88130 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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Ambient−temperature thermal background limited performance has been obtained for a thermal imaging system based on the PrCl3 quantum counter. The principal ’’noise’’ source in the PrCl3 quantum counter is shown to be a pump−induced emission characterized by a radiative lifetime of less than 50 nsec. Using the principle of temporal discrimination for the reduction of noise, a contrast of ∼40% was measured for a temperature difference of ∼5 °C above ambient temperature (23 °C).
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07.20.-n Thermal instruments and apparatus
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.60.Gz Photodetectors (including infrared and CCD detectors)

p−InP/n−CdS solar cells and photovoltaic detectors

Sigurd Wagner, J. L. Shay, K. J. Bachmann, and E. Buehler

Appl. Phys. Lett. 26, 229 (1975); http://dx.doi.org/10.1063/1.88131 (2 pages) | Cited 44 times

Online Publication Date: 2 September 2008

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We have prepared p−InP/n−CdS heterodiode photovoltaic detectors with a uniform quantum efficiency of ∼70% for wavelengths between 550 and 910 nm. On a cloudy day in New Jersey, (53 mW/cm2) solar power conversion efficiencies of 12.5% have been measured on cells provided with antireflection coatings.
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84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors

Optically pumped cw InSb lasers for NO spectroscopy

A. S. Pine and N. Menyuk

Appl. Phys. Lett. 26, 231 (1975); http://dx.doi.org/10.1063/1.88132 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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Tunable cw laser emission has been obtained near 5.3 μm from InSb samples at ∼10 K optically pumped with GaAs, Nd : YAG, and CO lasers. InSb laser thresholds have been determined as a function of incident pump wavelength and applied magnetic fields from 0 to 9.5 kOe. Temperature and magnetic field tuning have been utilized to obtain NO absorption spectra over a 10−cm−1 range.
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42.62.-b Laser applications
33.20.-t Molecular spectra
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Amorphous semiconductor threshold on−state properties as functions of decay time, ambient temperature, and polarity

Gary C. Vezzoli, L. William Doremus, G. G. Tirellis, and Peter J. Walsh

Appl. Phys. Lett. 26, 234 (1975); http://dx.doi.org/10.1063/1.88133 (4 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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The on−state conductance and radiative emission properties of an amorphous semiconductor threshold switch have been investigated. The transient on−state conductance GT and differential conductance GT are found to be constant for time intervals τ of up to 120 nsec during which the voltage is below the low−frequency holding voltage but above the knee voltage. The knee voltage is the voltage at which the transient on−state current−voltage curve coalesces into the transient off−state curve in the down−voltage direction. For τ≳120 nsec, GT and GT vary asymptotically with time. As ambient temperature is increased from 300 to 400 °K, GT is observed to remain constant or increase slightly as would be expected in dGT/dT for a metal. If the on−state is assumed to have a band gap, conductance vs temperature measurements indicate that the gap would have a value less than 1.2×10−4 eV, and thus for practical purposes the gap could be considered to be essentially zero. The intensity of the nonthermal radiative emission which is observed during the on−state of a threshold event is found to be polarity dependent such that when the Nesa electrode adjacent to the detector is of positive polarity, the intensity of the emission is 25% greater than when the polarity is reversed. These observations are interpreted as indications that the on state is maintained electronically rather than thermally, in a state analogous to a metal or semimetal with a zero indirect electrical band gap but a finite direct optical gap.
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72.80.Ng Disordered solids
85.30.De Semiconductor-device characterization, design, and modeling
72.60.+g Mixed conductivity and conductivity transitions

Improved optical quality of AgGaS2

H. Matthes, R. Viehmann, and N. Marschall

Appl. Phys. Lett. 26, 237 (1975); http://dx.doi.org/10.1063/1.88134 (3 pages) | Cited 29 times

Online Publication Date: 2 September 2008

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Single crystals of AgGaS2 for nonlinear optical applications were grown by the Bridgman−Stockbarger technique. It was possible to prepare 0.5−cm cubes free of lamellar twins from the central region of the boules. Room−temperature absorption of as−grown crystals was below 0.3 cm−1 through the whole transmission range. After an annealing process with additional sulfur, absorption was reduced to α<0.1 cm−1 in the wavelength range λ=0.9−8.5 μm.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Reliability of DH GaAs lasers at elevated temperatures

R. L. Hartman and R. W. Dixon

Appl. Phys. Lett. 26, 239 (1975); http://dx.doi.org/10.1063/1.88135 (4 pages) | Cited 69 times

Online Publication Date: 2 September 2008

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Data from accelerated aging tests on continuously operating stripe−geometry double−heterostructure GaAs lasers are presented. By extrapolating data obtained in dry−nitrogen ambients at temperatures of 90, 70, and 50 °C, it is concluded that continuous room−temperature operation of these devices as lasers with power outputs exceeding 1 mW per laser face for times in excess of 100000 h is possible.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Reversible photoinduced change in intermolecular distance in amorphous As2S3 network

K. Tanaka

Appl. Phys. Lett. 26, 243 (1975); http://dx.doi.org/10.1063/1.88136 (3 pages) | Cited 88 times

Online Publication Date: 2 September 2008

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A reversible photoinduced change in the intermolecular distance has been observed in a well−annealed As2S3 film using a detailed x−ray diffraction technique. This phenomenon is strongly related to the reversible optical absorption edge shift (i.e., photodarkening) by successive cycles of band−gap illumination and annealing. A quantitative interpretation is given for both phenomena in connection with the pressure−induced optical absorption edge shift.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
61.43.Fs Glasses
61.43.-j Disordered solids

FM noise of high−efficiency GaAs IMPATT oscillators and amplifiers

A. Mircea, E. Constant, and R. Perrichon

Appl. Phys. Lett. 26, 245 (1975); http://dx.doi.org/10.1063/1.88137 (4 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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It is found experimentally that the FM noise deviation and noise measure of high−efficiency Read−type GaAs oscillators improve with increasing output power, in contrast with the behavior of conventional (flat doping profile) devices of similar technology. It is suggested that this novel potentially attractive feature may be due to tunnel carrier generation in the Read−type device.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.70.+m Noise processes and phenomena

Electron trapping at positively charged centers in SiO2

T. H. Ning, C. M. Osburn, and H. N. Yu

Appl. Phys. Lett. 26, 248 (1975); http://dx.doi.org/10.1063/1.88138 (3 pages) | Cited 26 times

Online Publication Date: 2 September 2008

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Evidence is presented which indicates that positive oxide charge centers in thin films of thermally grown silicon dioxide are electron traps with an average capture cross section of 3±2×10−13 cm2 at room temperature and at an average oxide field of about 7×105 V/cm. Positive charge centers of other origins are also expected to be electron traps with about the same capture cross section.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ng Insulators

Defect structure of degraded heterojunction GaAlAs−GaAs lasers

P. W. Hutchinson, P. S. Dobson, S. O’Hara, and D. H. Newman

Appl. Phys. Lett. 26, 250 (1975); http://dx.doi.org/10.1063/1.88139 (3 pages) | Cited 70 times

Online Publication Date: 2 September 2008

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Transmission electron microscopy has been used to study the defects associated with the degradation of broad−contact geometry double−heterostructure lasers. Two different types of dislocation networks have been observed close to the active region of the degraded device having Burgers vectors of (a/2) 〈011〉 and a〈001〉. Both networks have been shown to be of interstitial character.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
61.72.Lk Linear defects: dislocations, disclinations

Energy transfer from Ce3+ to Tm3+ in borate and phosphate glasses

R. Reisfeld and Y. Eckstein

Appl. Phys. Lett. 26, 253 (1975); http://dx.doi.org/10.1063/1.88140 (2 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Energy transfer from Ce3+ to Tm3+ is reported in borate and phosphate glasses. It was found that the 1D2→3H4 blue emission of thulium could be increased manyfold when excited through 4f−5d absorption of Ce3+. It is suggested that the energy transfer process is of multipolar type.
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78.55.-m Photoluminescence, properties and materials
81.40.Tv Optical and dielectric properties related to treatment conditions
32.50.+d Fluorescence, phosphorescence (including quenching)

Single−crystal β−SiC films by reactive sputtering

K. E. Haq

Appl. Phys. Lett. 26, 255 (1975); http://dx.doi.org/10.1063/1.88141 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Single−crystal β−SiO films were deposited by reactive sputtering on α−SiC substrates at temperatures as low as 1150 °C at a growth rate of 3 Å/sec. Elemental Si was used for target material. The carbon was provided by introducing a hydrocarbon gas in the reaction chamber. Initial results indicate that the process is highly promising.
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81.20.-n Methods of materials synthesis and materials processing
68.55.-a Thin film structure and morphology

Coherent selective erasure of superimposed volume holograms in LiNbO3

J. P. Huignard, J. P. Herriau, and F. Micheron

Appl. Phys. Lett. 26, 256 (1975); http://dx.doi.org/10.1063/1.88142 (3 pages) | Cited 18 times

Online Publication Date: 2 September 2008

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Selective erasure of superimposed holograms recorded in Fe−doped LiNbO3 is reported. This process consists of photoinducing complementary refractive index changes which cancel the previously recorded changes. It can be applied to any stacked hologram in the crystal volume as well as to any part of one selected hologram; in this last case it performs the Boolean operation exclusive or.
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42.40.Kw Holographic interferometry; other holographic techniques

Ferromagnetic domain structure of metallic glasses

H. J. Leamy, S. D. Ferris, G. Norman, D. C. Joy, R. C. Sherwood, E. M. Gyorgy, and H. S. Chen

Appl. Phys. Lett. 26, 259 (1975); http://dx.doi.org/10.1063/1.88143 (2 pages) | Cited 16 times

Online Publication Date: 2 September 2008

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We have applied the scanning electron microscopy (SEM) technique of Fathers et al. to a study of domain structure in metallic glasses of the form TM0.75P0.16X0.06Al0.03, where TM denotes Fe, Co, Ni, or an alloy of these and X denotes either B, C, or Si. The domain structure is dominated by the presence of a spatially nonuniform uniaxial anisotropy which is related to the flow processes induced by quenching the molten alloy. The existence of both a magnetostrictive and a directional ordering source of anisotropy is indicated.
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75.60.Ch Domain walls and domain structure
75.50.Kj Amorphous and quasicrystalline magnetic materials
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
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