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15 Mar 1975

Volume 26, Issue 6, pp. 281-351

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Effects of diffusion on gap− and strip−coupled acoustic surface wave convolvers

O. W. Otto

Appl. Phys. Lett. 26, 281 (1975); http://dx.doi.org/10.1063/1.88146 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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Diffusion in gap− and strip−coupled acoustic surface wave convolvers reduces the coupling of the surface wave to the semiconductor. It is shown theoretically, however, that the optimized convolver coupling coefficient, which is proportional to the ratio of the convolver coupling coefficient and the acoustoelectric attenuation, actually increases in the presence of diffusion. An equivalence between the gap− and strip−coupled devices is established so that the same conclusions are applicable to both.
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72.50.+b Acoustoelectric effects
43.58.+z Acoustical measurements and instrumentation

Formation of field−reversing ion rings using microsecond ion pulses

C. A. Kapetanakos, R. K. Parker, and K. R. Chu

Appl. Phys. Lett. 26, 284 (1975); http://dx.doi.org/10.1063/1.88147 (3 pages) | Cited 15 times

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Field−reversing ion rings may be formed using microsecond ion pulses. The short−circuit of the anode−cathode gap caused by the cathode plasma is delayed by placing the diode inside a nonsymmetric cusped magnetic field.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
28.52.Av Theory, design, and computerized simulation
52.55.-s Magnetic confinement and equilibrium
52.27.Ny Relativistic plasmas

Onset of convection due to horizontal laser beams

R. D. Boyd and C. M. Vest

Appl. Phys. Lett. 26, 287 (1975); http://dx.doi.org/10.1063/1.88148 (2 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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When a horizontal cw laser beam is suddenly turned on in a quiescent isothermal fluid there is a delay time t∗ during which thermal blooming is governed by absorption of radiation and thermal conduction. For t≳t∗, free convection becomes a significant factor. t∗ is determined by an approximate quasisteady hydrodynamic stability analysis and is compared with existing experimental data.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
47.20.-k Flow instabilities

Enhancement of cw laser melt‐through of opaque solid materials by supersonic transverse gas flow

James E. Robin and Paul Nordin

Appl. Phys. Lett. 26, 289 (1975); http://dx.doi.org/10.1063/1.88160 (4 pages) | Cited 8 times

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The effects of a supersonic transverse gas flow over an opaque solid surface irradiated by a high−power cw laser is investigated. The motion of the gas parallel to the laser−induced melt layer produces two effects. The first is to feed energy into unstable surface disturbances. These instabilities do not grow indefinitely but become steady periodic waves. The second is the exertion of a shear stress at the gas/melt interface which in turn establishes a velocity profile in the melt. It is this second effect which results in melt removal at the trailing edge of the melt region. This removal increases the recession rate of the melt/solid boundary propagating through the solid. It is this shear−stress removal mechanism that is investigated. The analysis considers both gas and liquid viscosity.
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79.20.Ds Laser-beam impact phenomena
47.40.Ki Supersonic and hypersonic flows
64.70.D- Solid-liquid transitions

Crystal orientation dependence of residual disorder in As−implanted Si

H. Müller, W. K. Chu, J. Gyulai, J. W. Mayer, T. W. Sigmon, and T. R. Cass

Appl. Phys. Lett. 26, 292 (1975); http://dx.doi.org/10.1063/1.88161 (3 pages) | Cited 35 times

Online Publication Date: 2 September 2008

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MeV 4He+ channeling effect measurements combined with transmission electron microscopy (TEM) and Hall effect measurements were employed to study the orientation dependence of the amount of damage remaining after anneal of 200−keV As−implanted Si. The residual disorder after high−temperature annealing was found to depend upon the crystal orientation. For 〈111〉−oriented Si, anomalously high residual disorder was found in the dose region of 1015/cm2 by both the TEM and channeling measurements. Significantly less disorder was found in 〈100〉− and 〈110〉−oriented Si, the latter exhibiting essentially no residual disorder. The electrical activity of the implanted layer was consistent with the orientation dependence observed.
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61.72.U- Doping and impurity implantation
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions

Varistorlike I−V characteristics in sputtered carbon films

H. Morisaki, H. Iwasaki, and K. Yazawa

Appl. Phys. Lett. 26, 294 (1975); http://dx.doi.org/10.1063/1.88162 (3 pages)

Online Publication Date: 2 September 2008

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Varistorlike I−V characteristics have been observed in sputtered carbon films sandwiched by Al electrodes. The threshold voltage of the Al−C−Al varistors is controlled by the sputtering time and not by the rf input power for sputtering if other parameters are unchanged. Auger analysis of the films has clarified that the nonlinear characteristics are strongly influenced by anomalous profiles of tungsten atoms migrated from Al.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ng Disordered solids
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Ns Metal-nonmetal contacts

Optical intensity modulator with three−dimensional waveguide

Shingo Uehara, Kiichi Takamoto, Seitaro Matsuo, and Yoshiharu Yamauchi

Appl. Phys. Lett. 26, 296 (1975); http://dx.doi.org/10.1063/1.88163 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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A LiTaO3 optical waveguide modulator, in which a laser beam is confined in both transverse dimensions, has been fabricated. The three−dimensional waveguiding operation was achieved by using an ion−etched thin core slab and a slit metal cladding. Waveguide porperties for 0.633− and 1.15−μm laser beams and dc and rf modulation performance for a 1.15−μm beam are described.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Hp Optical processors, correlators, and modulators
84.40.Az Waveguides, transmission lines, striplines
42.79.Gn Optical waveguides and couplers

Electro−optic intensity modulation in LiTaO3 ridge waveguide

Juichi Noda, Naoya Uchida, Makoto Minakata, Tadashi Saku, Shoichi Saito, and Yoshiro Ohmachi

Appl. Phys. Lett. 26, 298 (1975); http://dx.doi.org/10.1063/1.88164 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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A narrow rectangular ridge for 24 μm (width of the top) ×6 μm (height) ×5.4 mm (length) has been formed on Cu−diffused x−plate LiTaO3 using the sputter−etching technique. The intensity modulation of the optical wave confined in the ridge has been made up to 1 GHz with a half−wave voltage of 25−30 V at 6328 Å.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects

Absorption coefficient measurements of nitrous oxide and methane at DF laser wavelengths

Terrence F. Deaton, David A. Depatie, and Thomas W. Walker

Appl. Phys. Lett. 26, 300 (1975); http://dx.doi.org/10.1063/1.88165 (4 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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The absorption coefficients for methane and nitrous oxide have been measured at 17 DF laser wavelengths in the region of 3.8 μm using a spectrophone. Concentrations of the absorbing gases very near their atmospheric concentrations were used. The absorption coefficients for the two gases at standard sea level atmospheric conditions are presented. The spectrophone device developed for this work is a differential cell which produces an equivalent absorption background signal of only 3.3×10−7 m−1/W.
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33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
07.60.Rd Visible and ultraviolet spectrometers

Optical directional couplers and grating couplers using a new high−resolution photolocking material

W. J. Tomlinson, H. P. Weber, C. A. Pryde, and E. A. Chandross

Appl. Phys. Lett. 26, 303 (1975); http://dx.doi.org/10.1063/1.88166 (4 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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Low−loss single−mode optical waveguides (∼4×1.5 μm), optical directional couplers, and grating couplers were made by the photolocking process in a new high−resolution system using naphthalenethiol as the dopant. Index changes of up to 1.3% and optical losses typically 0.3 dB/cm were achieved (at λ=633 nm). The directional couplers had coupling lengths as short as 150 μm, with virtually complete transfer of the guided energy from one guide to another. Grating couplers were written in which the bulk index of the guiding film is spatially modulated with periods as short as 0.28 μm, giving coupling strengths of up to 15 dB/cm.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators

Population inversion by nonadiabatic frequency chirping

Paul Horwitz

Appl. Phys. Lett. 26, 306 (1975); http://dx.doi.org/10.1063/1.88167 (3 pages) | Cited 19 times

Online Publication Date: 2 September 2008

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A calculation is presented of the asymptotic final state of a two−level system, initially in the ground state, in the presence of coherent constant−intensity radiation, the frequency of which is linearly swept through the resonance line. The resulting very simple formula approaches the appropriate limits in the sudden and adiabatic approximations.
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32.80.Xx Level crossing and optical pumping

Electrically based spectral power measurements through use of a tunable cw laser

Jon Geist, Bruce Steiner, Russell Schaefer, Edward Zalewski, and Antonio Corrons

Appl. Phys. Lett. 26, 309 (1975); http://dx.doi.org/10.1063/1.88168 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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A new approach to radiant power measurements is described. A continuously tunable cw dye laser was used to measure the absolute spectral response of a silicon photodiode and narrow band−pass filter by comparison with an electrically calibrated pyroelectric detector. The filtered photodetector was then used to measure the spectral power density from a standard lamp that had been calibrated by the classical technique. The agreement of better than 1% between the two measurements is well within the uncertainties identified with each measurement individually, of the order of 1%. A number of advantages in the new technique are identified.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.62.-b Laser applications

Transversely pumped LNP laser performance

Kenju Otsuka and Tomoaki Yamada

Appl. Phys. Lett. 26, 311 (1975); http://dx.doi.org/10.1063/1.88169 (3 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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We report on quaiscontinuous laser oscillation of lithium neodymium tetraphosphate of 2−mm length pumped transversely with a chopped argon laser. The room−temperature threshold was 95 mW and the slope efficiency was 3.7%. The threshold of transverse pumping was 2.5 times that of longitudinal pumping; therefore, the relative pumping efficiency was 40%.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
32.80.Xx Level crossing and optical pumping

Anomalous dispersion effects on pulse propagation in high−pressure CO2 amplifiers

G. T. Schappert and M. J. Herbst

Appl. Phys. Lett. 26, 314 (1975); http://dx.doi.org/10.1063/1.88170 (2 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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We have measured the time delay of a P (20) short pulse propagating through a high−pressure CO2 amplifier under small−signal−gain conditions. The reduced velocity agrees with the group velocity, which is about 0.92c. The effect is proportional to the small signal gain divided by the linewidth.
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42.50.-p Quantum optics
84.40.Ba Antennas: theory, components and accessories

Optically pumped vibrational transition laser in OCS

H. R. Schlossberg and H. R. Fetterman

Appl. Phys. Lett. 26, 316 (1975); http://dx.doi.org/10.1063/1.88171 (3 pages) | Cited 16 times

Online Publication Date: 2 September 2008

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Laser oscillation between vibrational states has been demonstrated at 19 μm in OCS by optical pumping on the ν2 overtone with a CO2 TEA laser. Analysis of the molecular kinetics indicates this technique to be general and capable of yielding many high−power (≳1000 W) laser lines below 50 μm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.80.Xx Level crossing and optical pumping

Single−crystal fiber optical devices: A Nd:YAG fiber laser

C. A. Burrus and J. Stone

Appl. Phys. Lett. 26, 318 (1975); http://dx.doi.org/10.1063/1.88172 (3 pages) | Cited 44 times

Online Publication Date: 2 September 2008

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Single−crystal fibers of Nd:YAG have been grown in diameters as small as, but not limited to, 50 μm by a pedestal growth (modified zone melting) technique. Room−temperature cw laser operation has been achieved with 0.5−1−cm−long samples. The method is directly applicable to the growth of single−crystal fibers of various materials for devices covering a wide range of applications, especially for optical communications.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.81.-i Fiber optics
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Reduced gain of ion−implanted transistors

K. H. Nicholas, R. A. Ford, P. J. Daniel, C. W. Sullivan, P. Sant, C. Bull, and G. R. Booker

Appl. Phys. Lett. 26, 320 (1975); http://dx.doi.org/10.1063/1.88149 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Ion implantation is increasingly being used as a deposition technique because of the good uniformity and reproducibility that can be obtained with it. In this letter it is reported that lower gains of bipolar transistors can result from this use of implantation rather than diffusion for depositions. The degradation of gain is shown to be a lifetime effect associated with crystal damage. A technique for avoiding the degradation is described.
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85.30.Pq Bipolar transistors
61.72.U- Doping and impurity implantation

Depletion effects in semi−insulating GaAs

J. R. Waldrop, R. Zucca, and C. P. Wen

Appl. Phys. Lett. 26, 322 (1975); http://dx.doi.org/10.1063/1.88150 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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Auger electron spectroscopy in an ultrahigh−vacuum scanning electron microscope is used to determine the potential distribution across p−i−p and n−i−n GaAs structures under dc bias conditions. The two types of specimen structures give rise to very different potential profiles. Depletion regions in the semi−insulating (SI) material at the p−i junctions are identified, an effect that disallows the application of the widely used current injection theory. The depletion effect indicates that the examined SI GaAs material has n−type behavior even though the material is purposely doped with Cr, a known acceptor.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.20.Fv Electron impact: Auger emission

Determination of semiconductor−metal contact resistance by an angle−dependent geometrical magnetoresistance method

L. Gútai and I. Mojzes

Appl. Phys. Lett. 26, 325 (1975); http://dx.doi.org/10.1063/1.88151 (2 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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A simple method has been developed to separate the bulk and contact resistances of semiconductor devices measuring the angle dependence of the geometrical magnetoresistance. The performances and the efficiency of the method have been proved by measurements made on Gunn diodes. The accuracy is better than 0.5% of the total device resistance.
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73.40.Cg Contact resistance, contact potential
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.20.My Galvanomagnetic and other magnetotransport effects

Direct nuclear pumping of a helium−xenon laser

H. H. Helmick, J. L. Fuller, and R. T. Schneider

Appl. Phys. Lett. 26, 327 (1975); http://dx.doi.org/10.1063/1.88152 (2 pages) | Cited 32 times

Online Publication Date: 2 September 2008

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Excitation of a He−Xe laser was achieved by nuclear pumping, i.e., fission products interacted directly with the lasing gas and a portion of their energy was emitted as laser light. The transition observed is most likely the Xe 5d[7/2]03−6p[5/2]2, 3.508 μm. The He−Xe gas mixture ratio was 20 : 1 at a total pressure of 200 Torr. The light output exhibited a threshold effect and had the same characteristic waveform as the fission fragment flux above the threshold level. Laser output duration was approximately 150 μsec.
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32.70.Cs Oscillator strengths, lifetimes, transition moments
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Diffused two−dimensional optical waveguides in GaAs

E. Garmire, D. F. Lovelace, and G. H. B. Thompson

Appl. Phys. Lett. 26, 329 (1975); http://dx.doi.org/10.1063/1.88153 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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TE00 and TE01 optical waveguide modes have been observed in GaAs stripe p−n junctions produced by zinc diffusion through SiO2 masks into n−type substrates. Excellent agreement was found between guided light profiles at 1.15 μm and those predicted on the basis of refractive index profiles given by the free−carrier plasma effects.
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42.79.Gn Optical waveguides and couplers

High−power mode−locked TEA CO2 laser using an unstable resonator

P. E. Dyer and D. J. James

Appl. Phys. Lett. 26, 331 (1975); http://dx.doi.org/10.1063/1.88154 (4 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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A passively mode−locked TEA CO2 laser has been operated with an unstable resonator, and mode−locked trains with peak powers ≳150 MW, together with near diffraction−limited beams, have been obtained. Single axial mode operation at a power level of 14 MW has also been achieved. These results represent a significant improvement over similarly dimensioned systems using stable resonators.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Simple TEA laser geometry with volumetric photoionization

B. J. Reits and A. H. M. Olbertz

Appl. Phys. Lett. 26, 335 (1975); http://dx.doi.org/10.1063/1.88155 (2 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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A weak uv source conditions a CO2 laser gas discharge with the aid of the seed gas tri−n−propylamine. Rich mixtures and high input energy densities can be used, resulting in extremely high peak powers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.50.Hp Processes caused by visible and UV light

Taper couplers for GaAs−AlxGa1−xAs waveguide layers produced by liquid phase and molecular beam epitaxy

J. L. Merz, R. A. Logan, W. Wiegmann, and A. C. Gossard

Appl. Phys. Lett. 26, 337 (1975); http://dx.doi.org/10.1063/1.88145 (4 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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Growth techniques and passive evaluation of tapered waveguide light couplers produced by LPE and MBE are reported. Coupling efficiencies approaching 100% for the transfer of light from a GaAs layer to a layer of Al0.1Ga0.9As are observed for MBE tapers, and tapers fabricated by LPE allow ∼50% coupling, suitable for use with LPE active devices.
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42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology

Mössbauer study of η phase in Fe−Ge binary system

D. Eliezer, S. Nadiv, and M. Ron

Appl. Phys. Lett. 26, 340 (1975); http://dx.doi.org/10.1063/1.88156 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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The Mössbauer spectrum data of η−FexGe was determined at room temperature and liquid−nitrogen temperatrue. It was found to be the same for the composition x=1.23 and x=1.11. X−ray diffraction results are in good agreement with published data.
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68.37.-d Microscopy of surfaces, interfaces, and thin films
61.66.Fn Inorganic compounds
76.80.+y Mössbauer effect; other γ-ray spectroscopy
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