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1 Apr 1975

Volume 26, Issue 7, pp. 355-411


Response of thermal filaments in VO2 to laser−produced thermal perturbations

E. C. Jelks, R. M. Walser, R. W. Bené, and W. H. Neal II

Appl. Phys. Lett. 26, 355 (1975); http://dx.doi.org/10.1063/1.88176 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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The response of thermal filaments in thin films of VO2 to small thermal perturbations induced by a He−Ne laser has been measured. With the aid of additional noise spectrum measurements the senstivity of a planar device with a 127−μ gap between electrodes is estimated to be approximately 0.6×10−9 W/(Hz)1/2 at 40 kHz. These devices appear, therefore, to be attractive as fast thermal detectors and may have applications as elements in high−density arrays. Radiance profiles of a thermal filament are also given.
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07.20.Dt Thermometers
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.80.Fi Thermoelectric devices

Image scanning through the acousto−optical effect produced by acoustic surface waves

A. Alippi, A. Palma, L. Palmieri, and G. Socino

Appl. Phys. Lett. 26, 357 (1975); http://dx.doi.org/10.1063/1.88177 (4 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The scanning of a transparency is done by letting a collimated light wave front illuminate it and be diffracted by very short pulses of ultrasonic surface waves. Detection of diffracted light follows a time dependence that equals the transparency brightness along each line that is successively scanned. 94−MHz wave trains, about 10 wavelengths long, give a potential number of resolved spots per second almost equal to 107. Interaction geometry by back−surface reflection has been used, which greatly enhances the diffraction efficiency and yet retains the large acousto−optical bandwidth proper to surface waves.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.30.Va Image forming and processing

Application of surface waves to the study of semiconductor surface state using the separated−medium acoustoelectric effect

Tadashi Shiosaki, Takao Kuroda, and Akira Kawabata

Appl. Phys. Lett. 26, 360 (1975); http://dx.doi.org/10.1063/1.88178 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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It is reported that the surface state of a semiconductor, e.g., germanium can be studied by the measurements of the acoustoelectric voltage due to the coupling with the elastic surface wave on an adjacent piezoelectric material, e.g., LiNbO3. The method is superior to the field−induced conductance method with regards to sensitivity, ease of sample preparation, and applicability to a sample of higher conductivity.
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73.20.-r Electron states at surfaces and interfaces
72.50.+b Acoustoelectric effects

Thickness dependence of acousto−optic diffraction efficiency in ZnO−film optical waveguides

J. Kushibiki, H. Sasaki, N. Chubachi, N. Mikoshiba, and K. Shibayama

Appl. Phys. Lett. 26, 362 (1975); http://dx.doi.org/10.1063/1.88179 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The thickness dependence of the efficiency of the Bragg diffraction between the same optical modes (TE0→TE0, TM0→TM0) by acoustic surface waves in ZnO−film optical waveguides is investigated at an acoustic frequency of 130 MHz and a film thickness from 0.6 to 8.0 μm. It is observed that the efficiencies for both the TE0 and the TM0 modes vary more than 2 orders of magnitude with the film thickness.
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42.79.Gn Optical waveguides and couplers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Two−port cavity resonator low−insertion−loss delay line

T. R. Joseph and K. M. Lakin

Appl. Phys. Lett. 26, 364 (1975); http://dx.doi.org/10.1063/1.88180 (2 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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A delay line is described which uses unidirectional transducers, formed by placing a short interdigital transducer (IDT) adjacent to a grating reflector, to realize low insertion losses. Theoretical and experimental results are compared for a device with 10.5 finger pair transducers and 100 finger pair gratings. The measured insertion loss was 2.5 dB at 38.14 MHz.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
07.07.Mp Transducers

Emission of intense microwave radiation from an automodulated relativistic electron beam

M. Friedman

Appl. Phys. Lett. 26, 366 (1975); http://dx.doi.org/10.1063/1.88181 (3 pages) | Cited 24 times

Online Publication Date: 2 September 2008

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High−power microwave radiation has been observed from the interaction of an intense relativistic electron beam and a cavity structure. The efficiency of conversion of electron kinetic energy into microwave radiation was about 20% with a total radiated power of order 500 MW. The mechanism responsible for the efficiency production of microwaves is based on a simple physical model.
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84.40.Ua Telecommunications: signal transmission and processing; communication satellites
41.75.Fr Electron and positron beams
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Transformation of the magnetic energy of a rotating relativistic beam into plasma energy

C. A. Kapetanakos, W. M. Black, and C. D. Striffler

Appl. Phys. Lett. 26, 368 (1975); http://dx.doi.org/10.1063/1.88182 (3 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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An intense rotating relativistic electron beam of energy 500 kV and current 40−50 kA is injected into neutral gas of pressure 200−700 mTorr, in the presence of an external magnetic field B0≃800 G. It is observed that the ratio of the magnetic field on axis ΔBz(r=0) to B0 is ΔBz(r=0)/B0≃2.2. The average magnetic energy density is about 2.5×1016 eV cm−3. Spectroscopic results show that most of this energy is transferred to the plasma through Joule heating.
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52.50.Gj Plasma heating by particle beams
52.40.Mj Particle beam interactions in plasmas

Glass−sealed GaAs−AlGaAs transmission photocathode

G. A. Antypas and J. Edgecumbe

Appl. Phys. Lett. 26, 371 (1975); http://dx.doi.org/10.1063/1.88183 (2 pages) | Cited 38 times

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A GaAs/GaAlAs/GaAs/GaAlAs heterostructure has been prepared on a GaAs susbtrate, bonded to 7056 Corning glass, and the substrate and first AlGaAs removed chemically, utilizing the differential etching characteristics of GaAs and AlGaAs in NH4OH−H2O2 and HF solutions. The resulting structure of GaAs/AlGaAs/glass has excellent layer morphology, uniform thickness, and good transmission photocathode performance.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.65.-b Surface treatments

Air−combustion product N2−CO2 electric laser

D. H. Douglas−Hamilton, G. W. Sutton, L. Westra, and R. S. Lowder

Appl. Phys. Lett. 26, 373 (1975); http://dx.doi.org/10.1063/1.88173 (2 pages) | Cited 2 times

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Efficient electron−beam sustainer CO2 laser action has been obtained in H2 : N2 : CO2 mixtures, using H2 as CO2ν2 deactivant. This opens up the possibility of using a fuel−rich hydrocarbon combustion product as a readily obtained laser gas mixtures, since such a mixture can be generated containing free H2. Efficient electron−beam sustainer CO2 laser action is predicted in the combustion exhaust products of the hydrocarbon fuels such as JP−4. A specific output J∼50 J/l atm is anticipated for an initial temperature Tgo=300 °K. Experimental measurement of laser output from JP−4 exhaust has been made in an electron−beam sustainer EDL. A 23−μsec duration discharge with ne∼3×1012 cm−3, E/N∼2.3×10−16 V cm2 was produced. Output J∼50 J/l atm was obtained for Tgo=211 °K. A 5−μsec delay in predicted laser onset and laser output 40% lower than theoretical were observed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.33.Vx Reactions in flames, combustion, and explosions

Phase−matched second harmonic generation in a liquid−filled waveguide

B. F. Levine, C. G. Bethea, and R. A. Logan

Appl. Phys. Lett. 26, 375 (1975); http://dx.doi.org/10.1063/1.88174 (3 pages) | Cited 16 times

Online Publication Date: 2 September 2008

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Phase−matched second harmonic generation in a nitrobenzene−filled waveguide has been accomplished by using a periodic electrode to modulate the nonlinear susceptibility.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects

Experimental observations of the effects of oxide charge inhomogeneity on fast surface state density from high−frequency MOS capacitance−voltage characteristics

M. J. McNutt and C. T. Sah

Appl. Phys. Lett. 26, 378 (1975); http://dx.doi.org/10.1063/1.88175 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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It is demonstrated experimentally that the observed surface density of state peaks near the band edges, obtained from the Terman analysis of the capacitance−voltage characteristics of silicon MOS capacitors, can be attributed to areal inhomogeneities of oxide charges. An excellent quantitative match between theory and experiment is obtained after an extension of the theory of the C−V characteristics of inhomogeneous samples to include the real surface state densities.
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73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Rotational coupling and laser dynamics in TE CO2 lasers

E. A. Ballik, B. K. Garside, and J. Reid

Appl. Phys. Lett. 26, 380 (1975); http://dx.doi.org/10.1063/1.88184 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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A model of the gain−switched TE CO2 laser is presented which explicitly includes rotational relaxation within the sublevels of the 10.4−μ laser band. Careful comparison with experiment is made employing a Q−switched cavity, and it is shown that rotational coupling dominates the laser dynamics at pressures below 150 Torr. Calculations demonstrate that the effect of rotational coupling is very significant even at atmospheric pressure, and its inclusion in the laser dynamical equations accounts for most of the difficulties obtained with previous models.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.70.Jg Line and band widths, shapes, and shifts

Homojunction fabrication in CuInSe2 by copper diffusion

R. D. Tomlinson, E. Elliott, J. Parkes, and M. J. Hampshire

Appl. Phys. Lett. 26, 383 (1975); http://dx.doi.org/10.1063/1.88185 (1 page) | Cited 12 times

Online Publication Date: 2 September 2008

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Rectifying p−n junctions have been fabricated in single crystals of CuInSe2 by diffusion of copper at relatively low temperatures. Some evidence of device instability at room temperature has been obtained.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Cadmium−diffused CuInSe2 junction diode and photovoltaic detection

Phil Won Yu, S. P. Faile, and Y. S. Park

Appl. Phys. Lett. 26, 384 (1975); http://dx.doi.org/10.1063/1.88186 (2 pages) | Cited 28 times

Online Publication Date: 2 September 2008

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Homojunction diodes have been prepared by diffusing cadmium into p−type CuInSe2. Forward−bias electrical characteristics exhibit a I∝V3 law, indicating double carrier flow. The photovoltaic response of typical diodes has a quantum efficiency of 35−40% in the wavelength region 0.9−1.2 μ.
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85.30.Kk Junction diodes
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Tapered section of multimode cladded fibers as mode filters and mode analyzers

Takeshi Ozeki, Takao Ito, and Toshifumi Tamura

Appl. Phys. Lett. 26, 386 (1975); http://dx.doi.org/10.1063/1.88187 (3 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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Mode filtering characteristics of biconical tapers in multimode fibers were examined. The insertion loss of a biconical taper for the HE11 mode is 0.2 dB and the rejection ratios for higher−order modes are more than 20 dB. The mode conversion in a biconical taper is sufficiently small except for the HE1n modes. It is found that a linearly tapered section can be used as a mode analyzer for multimode fibers.
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42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics

Subnanosecond tunable dye laser pulse generation by controlled resonator transients

Chinlon Lin and C. V. Shank

Appl. Phys. Lett. 26, 389 (1975); http://dx.doi.org/10.1063/1.88188 (3 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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A general technique for subnanosecond pulse generation from laser−pumped dye lasers is described. The technique makes use of the resonator transients. These transients are in the form of damped relaxation oscillation and their durations can be controlled by proper choices of photon cavity decay time and pumping level. High−repetition−rate tunable dye laser pulses of subnanosecond durations have been obtained from N2 laser pumped dye solutions in the near−uv and visible regions. These tunable subnanosecond pulses should provide useful excitation sources for nanosecond absorption and fluorescence spectroscopy.
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42.55.Mv Dye lasers
42.72.-g Optical sources and standards
32.80.Xx Level crossing and optical pumping

An aluminum/SiO2/silicon−on−sapphire light valve matrix for projection displays

J. Guldberg, H. C. Nathanson, D. L. Balthis, and A. S. Jensen

Appl. Phys. Lett. 26, 391 (1975); http://dx.doi.org/10.1063/1.88189 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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A new electron−beam−addressed light valve structure has been tested which is composed of a large array of 0.002×0.002−in. 3000−Å−thick aluminized silicon dioxide electrostatically deflectable squares, suspended by a centrally located 4−5−μm−tall silicon post over a transparent sapphire substrate. The device is fabricated using conventional semiconductor processing techniques and, in particular, slits are photolithographically defined in each picture element so as to spatially separate in the schlieren stop plane the signal light produced by deflected elements from the diffraction pattern from the matrix. Experimental results include 20 lines/mm resolution, 18:1 contrast ratio, picture storage times of several months, and full erasure times of 1/30 sec.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
41.75.Fr Electron and positron beams

GaxIn1−xP−GayAl1−yAs heterojunction close−confinement injection laser

G. Schul and P. Mischel

Appl. Phys. Lett. 26, 394 (1975); http://dx.doi.org/10.1063/1.88190 (2 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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Heterojunction laser diodes with GaxIn1−xP active layer have been fabricated from GaAs−Ga0.51In0.49P−Ga0.32 Al0.68As−GaAs heterostructures made by liquid phase epitaxy from Ga−rich and In−rich solutions. Stripe−geometry lasers have been operated at 77 K with threshold current densities as low as 2500 A/cm2 with an emission wavelength of λ=638 nm.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.60.Fi Electroluminescence

LiNbxTa1−xO3 optical waveguiding layer in LiTaO3 fabricated by diffusion of LiNbO3 sputtered film

Makoto Minakata, Juichi Noda, and Naoya Uchida

Appl. Phys. Lett. 26, 395 (1975); http://dx.doi.org/10.1063/1.88191 (4 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Thermal diffusion of a rf−sputtered LiNbO3 thin film into a LiTaO3 substrate has been investigated. By an appropriate choice of diffusion conditions, a single−mode waveguiding layer with the composition LiNbxTa1−xO3 has been fabricated. The refractive−index change at the surface is about 0.9×10−3 for both ne and no and the diffusion depth is 4.7 μm. The layer supports only the fundamental modes TE0 and TM0 and exhibits good waveguiding properties.
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42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators

Fabrication of submicron polysilicon lines by conventional techniques

K. H. Nicholas, H. E. Brockman, and I. J. Stemp

Appl. Phys. Lett. 26, 398 (1975); http://dx.doi.org/10.1063/1.88192 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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A new method of making fine geometry polysilicon lines has been developed. It requires no special apparatus or critical processing. Silicon gate MOST’s with dimensions of about 1 μm have been fabricated. Applications of the fine geometry MOST’s to the fabrication of high−packing−density MOSIC’s and high−frequency transistors are outlined.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling

Static technique for precise measurements of surface potential and interface state density in MOS structures

K. Ziegler and E. Klausmann

Appl. Phys. Lett. 26, 400 (1975); http://dx.doi.org/10.1063/1.88193 (3 pages) | Cited 29 times

Online Publication Date: 2 September 2008

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A new static technique for a very accurate measurement of charge, surface potential, low−frequency capacitance, interface charge, and interface state density in MOS structures is presented. A comparison with the conductance method is made. For a 〈111〉−oriented n−type silicon wafer, oxidized in dry oxygen and annealed in hydrogen, the distribution of the interface state density is shown over an energy range of 0.9 eV within the energy gap.
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73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

New high−speed bubble garnets based on large gyromagnetic ratios (high g)

R. C. LeCraw, S. L. Blank, and G. P. Vella−Coleiro

Appl. Phys. Lett. 26, 402 (1975); http://dx.doi.org/10.1063/1.88194 (3 pages) | Cited 11 times

Online Publication Date: 2 September 2008

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A new approach to overcoming the problem of dynamic conversion in high−mobility bubble garnets is described based on large gyromagnetic ratios (high g factors). In a film of Eu1.45Y0.45Ca1.1Fe3.9Si0.6Ge0.5O1@qL 2, a g factor greater than 30 has been obtained, which increases the usable domain wall velocity before onset of dynamic conversion by more than an order of magnitude over comparable bubble garnet films with g approximately 2. Using a circuit period of 28.8 μm, propagation data showing no deterioration in bias margins out to 107 steps were obtained on this film at 1 and 2 MHz.
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75.60.Ch Domain walls and domain structure
85.70.Ge Ferrite and garnet devices

Field heat treatment of ferromagnetic metallic glasses

H. S. Chen, S. D. Ferris, E. M. Gyorgy, H. J. Leamy, and R. C. Sherwood

Appl. Phys. Lett. 26, 405 (1975); http://dx.doi.org/10.1063/1.88195 (2 pages) | Cited 20 times

Online Publication Date: 2 September 2008

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The magnetic properties of zero magnetostrictive metallic glass have been investigated using both standard fluxmeter methods and domain patterns obtained from a scanning electron microscope technique. This investigation shows that the material is not magnetically isotropic but rather has preferred directions of magnetization that are determined by the details of the quenching process. The magnetic aniostropy produced by subsequent field anneal dominates the original anisotropy and determines the magnetic behavior after the heat treatment.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.-d Domain effects, magnetization curves, and hysteresis
75.30.Gw Magnetic anisotropy

Low−temperature dielectric loss in polyethylene

R. A. Thomas and C. N. King

Appl. Phys. Lett. 26, 406 (1975); http://dx.doi.org/10.1063/1.88196 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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A calorimetric technique was used to accurately determine the dielectric loss tangent of both additive−free and commerical grades of polyethylene at liquid−helium temperature. We found that the loss tangent of polyethylene often exhibits a broadened dielectric relaxation peak. Although this peak is centered in the kilohertz region, its existence increases the loss tangent at 60 Hz. Thus, the possibility of the elimination or reduction of this peak is important in evaluating the suitability of polyethylene as an insulator for a superconducting ac power transmission line. We have measured the intrinsic dielectric loss tangent of polyethylne and have found it to be ∼5×10−6. In addition, by systematically studying the influence of chemical additives on the dielectric loss, we have found the conditions necessary to obtain polyethylene exhibiting this low loss using present industrial production methods.
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77.22.Gm Dielectric loss and relaxation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Thin−film optical magnetic mode converters

R. D. Henry

Appl. Phys. Lett. 26, 408 (1975); http://dx.doi.org/10.1063/1.88197 (4 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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A new type of thin−film magneto−optic mode converter is described which has the potential to perform both reciprocal and nonreciprocal mode conversion. As a reciprocal mode converter, the fabrication of the device is straightforward and presents some features not available in previous designs. The same basic structure can be used as a starting point to attack the problem of nonreciprocal devices.
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42.79.Hp Optical processors, correlators, and modulators
84.40.Az Waveguides, transmission lines, striplines
85.70.Sq Magnetooptical devices
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