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15 Apr 1975

Volume 26, Issue 8, pp. 415-486

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Scanning electron microscope investigation of electric activity of stacking faults in silicon epitaxial layer

T. Kato, T. Matsukawa, and R. Shimizu

Appl. Phys. Lett. 26, 415 (1975); http://dx.doi.org/10.1063/1.88220 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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Comparing the images of stacking faults obtained by a scanning electron microscope (SEM) with those obtained by the optical method, we found that not all of the existing faults are observed in an EBIC image of SEM and that the stacking faults which give no contrast in the EBIC image show no preferential etching in Sirtl etchant.
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61.72.Nn Stacking faults and other planar or extended defects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Polarity effects in high−pressure z pinch

J. M. Preston and F. L. Curzon

Appl. Phys. Lett. 26, 417 (1975); http://dx.doi.org/10.1063/1.88221 (2 pages) | Cited 1 time

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Significant differences in the electron density and temperature of the pinching plasma in a z pinch in helium are caused simply by reversing the polarity of the applied voltage. These effects are attributed to differences in the breakdown mechanism.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.55.Jd Magnetic mirrors, gas dynamic traps

Continuously tunable submillimeter wave source

M. A. Piestrup, R. N. Fleming, and R. H. Pantell

Appl. Phys. Lett. 26, 418 (1975); http://dx.doi.org/10.1063/1.88198 (4 pages) | Cited 47 times

Online Publication Date: 2 September 2008

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A method for spanning the 100−1000−μ portion of the spectrum with continuously tunable coherent radiation is described. The approach is based upon laser light scattering from the long−wavelength side of the A1−symmetry soft mode in LiNbO3. In contrast with other techniques, this method uses a single fixed−frequency pump source, requires no magnetic field, provides continuous rather than discrete tuning, can cover most of the 100−1000−μ range, operates at room temperature, and is simple to tune. The experimental data show that tuning was obtained from approximately 150 to 700 μ.
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42.72.-g Optical sources and standards
42.62.-b Laser applications
84.40.Ua Telecommunications: signal transmission and processing; communication satellites

CO2 laser heating of plasma columns in a steady solenoid field

H. L. Rutkowski, D. W. Scudder, Z. A. Pietrzyk, and G. C. Vlases

Appl. Phys. Lett. 26, 421 (1975); http://dx.doi.org/10.1063/1.88222 (3 pages) | Cited 26 times

Online Publication Date: 2 September 2008

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A 250−J CO2 laser has been used to produce plasma columns 12−20 cm in length, 2−4 mm in diameter, from initially uniform neutral hydrogen in a steady solenoidal field up to 100 kG. Interferometric and spectroscopic measurements indicate densities and temperatures on the order of 100 eV and 5×1017 cm−3, respectively. The backward−going laser−driven wave normally present in laser breakdown has been eliminated by pulsed filling of the tube.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Channeling−effect study of deuteron−induced damage in Si and Ge crystals

P. Baeri, S. U. Campisano, G. Foti, E. Rimini, and J. A. Davies

Appl. Phys. Lett. 26, 424 (1975); http://dx.doi.org/10.1063/1.88223 (3 pages) | Cited 13 times

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The disorder produced by 0.3−MeV D+ in Si and Ge at 80 °K has been analyzed in situ by 1.5−MeV D+ channeling measurements. Differences of about 10% have been found in the ψ1/2 values between the undamaged and damaged crystal. On the basis of the Lindhard continuum potential approximation, an average displacement of 0.15 Å from the row is required to explain the observed ψ1/2 decrease.
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61.72.U- Doping and impurity implantation

High−energy neutron sputtering yields from gold and niobium

L. H. Jenkins, T. S. Noggle, R. E. Reed, M. J. Saltmarsh, and G. J. Smith

Appl. Phys. Lett. 26, 426 (1975); http://dx.doi.org/10.1063/1.88224 (3 pages) | Cited 9 times

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High−energy neutron sputtering yields ≲10−4 ejected particles/ incident neutron have been measured for Au and Nb specimens irradiated under high−vacuum conditions using a neutron source based on the 9Be(d,n) reaction. These measurements are consistent with theoretical predictions, but much lower than experimental data previously reported by one research group.
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79.20.-m Impact phenomena (including electron spectra and sputtering)
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)

Enhancement of pyroelectricity in a vinylidene fluoride−tetrafluoroethylene copolymer

A. I. Baise, H. Lee, B. Oh, R. E. Salomon, and M. M. Labes

Appl. Phys. Lett. 26, 428 (1975); http://dx.doi.org/10.1063/1.88225 (3 pages) | Cited 31 times

Online Publication Date: 2 September 2008

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Pyroelectric coefficients of a copolymer of vinylidene fluoride (95%) and tetrafluoroethylene (5%) have been measured, and were found to be significantly higher than those obtained for the poly(vinylidene fluoride) homopolymer. The effect of poling time and the nature of the (first cycle) thermally stimulated currents are also compared.
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77.70.+a Pyroelectric and electrocaloric effects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Effects of dislocations on photoluminescent properties in liquid phase epitaxial GaP

Tohru Suzuki and Yoshishige Matsumoto

Appl. Phys. Lett. 26, 431 (1975); http://dx.doi.org/10.1063/1.88226 (3 pages) | Cited 17 times

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Correlations between photoluminescent decay time and dislocation density were studied in undoped liquid phase epitaxial GaP. Dislocations strongly reduce the photoluminescent decay time, especially in samples in which nonradiative recombination times (τ0) due to shunt paths other than dislocations are long. Dislocations were found to correspond to photoluminescence dark spots whose diameter is correlated with τ0. A quantitative model is presented, which is in good qualitative agreement with the observed photoluminescent−decay−time−versus−dislocation−density relationships.
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78.55.-m Photoluminescence, properties and materials
61.72.Lk Linear defects: dislocations, disclinations

Auger spectroscopy analysis of palladium silicide films

Simon Thomas and L. E. Terry

Appl. Phys. Lett. 26, 433 (1975); http://dx.doi.org/10.1063/1.88199 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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The formation of Pd2Si in Pd films sputter deposited on Si substrates and heated up to 400 °C has been studied by measuring the depth profile using Auger electron spectroscopy (AES) and Ar+ ion sputtering. Significant chemical effects in the silicon LVV Auger peak shape have been observed, enabling the easy differentiation of the silicide from elemental silicon. The depth profile indicated that the silicide phase is formed at the Pd/Si interface even in the unannealed films. In forming the silicide, the silicon atoms diffuse through the film and on arrival at the surface oxidize to form a thin layer of SiO2. Some of the problems encountered in the determination of the depth scale from the AES data are pointed out.
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68.55.-a Thin film structure and morphology
73.30.+y Surface double layers, Schottky barriers, and work functions
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Hole mobility and transport in thin SiO2 films

R. C. Hughes

Appl. Phys. Lett. 26, 436 (1975); http://dx.doi.org/10.1063/1.88200 (3 pages) | Cited 47 times

Online Publication Date: 2 September 2008

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The first measurement of the hole mobility and its temperature dependence in thermally grown SiO2 on Si is reported and found to follow μ≃20 exp(−0.6eV/kT) cm2/V sec. In agreement with previous studies, the energy required to form an electron−hole pair with ionizing radiation is found to be field dependent and at very high fields is in the range of 18 eV/electron−hole pair, and is nearly temperature independent from 77 to 370 °K.
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61.80.Cb X-ray effects
61.80.Ed γ-ray effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ng Insulators

Backside−illuminated Pb1−xSnxTe heterojunction photodiode

A. M. Andrews, J. T. Longo, J. E. Clarke, and E. R. Gertner

Appl. Phys. Lett. 26, 438 (1975); http://dx.doi.org/10.1063/1.88201 (4 pages) | Cited 11 times

Online Publication Date: 2 September 2008

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The need for a long−wavelength infrared detector that makes more efficient use of the available radiation has led us to construct a backside−illuminated Pb1−xSnxTe heterojunction in which the radiation passes through a transparent substrate and is absorbed in the active region behind a p−n junction. This device permits a selectivity in the spectral bandwidth of the device due to the short−wavelength cut−on properties of the transparent PbTe substrate or an epitaxial Pb1−xSnxTe filter layer. Additionally, an effective increase in optical area is achieved because the radiation incident upon the sloping sides of the mesa is internally reflected into the junction region due to the index of refraction mismatch between air and PbTe; thus with this design the optical area which gives rise to the signal current is larger than the electrical area which is the source of noise. Laboratory measurements on devices of this construction verify these properties and show that a peak Dλ greater than 1011 cm Hz1/2 W−1 has been obtained at an operating temperature of 77 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Enhanced nonlinear optical effects in rotationally twinned crystals

C. F. Dewey and L. O. Hocker

Appl. Phys. Lett. 26, 442 (1975); http://dx.doi.org/10.1063/1.88202 (3 pages) | Cited 26 times

Online Publication Date: 2 September 2008

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We have produced continuously tunable infrared radiation between 4 and 21 μm by mixing the outputs of a ruby laser and a ruby−pumped dye laser in a single rotationally twinned ZnSe crystal. The peak output power of 5 W at 4 μm is approximately 250 times larger than the power obtained from an untwinned ZnSe crystal of comparable length. This enhancement is attributable to randomly spaced rotational twin planes perpendicular to the direction of propagation. Regularly spaced twins should produce an enhancement proportional to the square of the number of twin planes.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.72.-g Optical sources and standards
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Completeley optical coincidence logic employing a dye laser

E. J. Johnson, L. A. Riseberg, A. Lempicki, and H. Samelson

Appl. Phys. Lett. 26, 444 (1975); http://dx.doi.org/10.1063/1.88203 (4 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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We report the theory and experimental demonstration of a laser device which performs the functions of binary arithmetic completely optically. The coincidence circuit employs polarization coding of the logic variables and is based upon the bistable polarization behavior of a dye laser in a birefringent cavity.
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42.30.-d Imaging and optical processing
42.62.-b Laser applications

A 3400−Å p−terphenyl dye laser pumped by a CO2−laser−produced plasma

W. T. Silfvast and O. R. Wood II

Appl. Phys. Lett. 26, 447 (1975); http://dx.doi.org/10.1063/1.88204 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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Ultraviolet radiation from a xenon plasma produced with a high−pressure pulsed CO2 laser has been used to pump a 3400−Å p−terphenyl dye laser. Potential advantages of laser−porduced plasmas over electrical flashlamps as pumping sources for uv dye lasers are discussed.
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42.55.Mv Dye lasers
32.80.Xx Level crossing and optical pumping

Theory of short−wavelength lasers from recombining plasmas

Walter W. Jones and A. W. Ali

Appl. Phys. Lett. 26, 450 (1975); http://dx.doi.org/10.1063/1.88205 (2 pages) | Cited 48 times

Online Publication Date: 2 September 2008

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Starting with a plasma of fully stripped ions (arbitrary Z) with an initial temperature and electron density, the set of rate equations governing the population densities of all discrete levels of hydrogenlike ions are solved. The results (population inversion and gain) are presented for a variety of cases, hydrogen through carbon, with emphasis on short−wavelength lasers.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
42.60.-v Laser optical systems: design and operation

Spin resonance matching in tunable far−infrared generation by optical mixing via spin−flip transitions

V. T. Nguyen and T. J. Bridges

Appl. Phys. Lett. 26, 452 (1975); http://dx.doi.org/10.1063/1.88206 (2 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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The generation of continuously tunable far−infrared radiation by difference frequency mixing, using the electron spin nonlinearity and a spin−flip laser, has been significantly improved. This has been done by tuning the sharp spin resonance of the mixer to the difference frequency by correct placement of the samples in a nonuniform magnetic field.
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42.72.-g Optical sources and standards
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Interferometric tuning of a 15−atm CO2 laser

F. O’Neill and W. T. Whitney

Appl. Phys. Lett. 26, 454 (1975); http://dx.doi.org/10.1063/1.88207 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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Efficient controlled frequency narrowing and tuning of a high−power 15−atm electron−beam−controlled CO2 laser has been achieved using a Fabry−Pérot etalon as a dispersive element in the laser resonator. Tuning has been accomplished over the free spectral range of the etalon (∼2.3 cm−1) giving a laser linewidth of <0.2 cm−1 for an output pulse energy ∼100 mJ in a spot size ∼1 mm2. The laser pulse length is ∼40 nsec for a peak power ∼5 MW.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers

High−efficiency graded band−gap AlxGa1−xAs−GaAs solar cell

James A. Hutchby

Appl. Phys. Lett. 26, 457 (1975); http://dx.doi.org/10.1063/1.88208 (3 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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A detailed theoretical analysis of an n−on−p graded band−gap AlxGa1−xAs−GaAs solar cell yields a maximum air mass zero power conversion efficiency of 17% compared to 9% for a similar GaAs cell. The analaysis includes surface and bulk minority carrier recombination, junction recombination current, spectrally varying surface reflection, and series resistance loss. The maximum efficiency is determined for a surface recombination velocity of 1×105 cm/sec and hole and electron diffusion lengths of 2.1 and 7.6 μm, respectively. The improved efficiency is primarily due to a built−in electric field, caused by the band−gap gradation, accelerating photogenerated holes toward the p−n junction. This field reduces the surface and bulk recombination of the holes, and thereby enhances their collection.
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84.60.Jt Photoelectric conversion

Junction electroluminescence in CuInS2

P. M. Bridenbaugh and P. Migliorato

Appl. Phys. Lett. 26, 459 (1975); http://dx.doi.org/10.1063/1.88209 (2 pages) | Cited 16 times

Online Publication Date: 2 September 2008

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We report the first observation of homojunction electroluminescence in CuInS2. These homojunctions are made by two different annealing procedures which convert a surface layer of p−type crystals. Diodes made by low−temperature (200 °C) In−Ga diffusion show a rectification ratio of 17000:1 at 2 V and a zero bias resistance of 1×107 Ω. For diodes made by high−temperature (600 °C) annealing in InCl3 the values are 15000:1 and 3×107 Ω, respectively. Electroluminescence has been observed in diodes made by In−Ga diffusion. The spectrum peaks at 1.48 eV at 300 °K and at 1.42 eV at 77 °K. The internal quantum efficiency is 10−5 at 300 °K and 10−3 at 77 °K.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation

S. Yoshida, S. Misawa, and A. Itoh

Appl. Phys. Lett. 26, 461 (1975); http://dx.doi.org/10.1063/1.88210 (2 pages) | Cited 24 times

Online Publication Date: 2 September 2008

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Single−crystal films of AlN were fabricated on sapphire substrates by reactive evaporation of aluminum in ammonia gas. Films obtained have smooth and flat surfaces and there is no observed cracking. On the (0001) plane of sapphire, the c axis of AlN is aligned normal to the substrate surface, while on sapphire (0112), the c axis of AlN is inclined at about 28° to the film normal.
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68.55.-a Thin film structure and morphology

Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures

J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegmann, and W. A. Nordland

Appl. Phys. Lett. 26, 463 (1975); http://dx.doi.org/10.1063/1.88211 (3 pages) | Cited 79 times

Online Publication Date: 2 September 2008

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We report optically pumped laser oscillation from multilayer heterostructures consisting of alternating layers of GaAs and Al0.2Ga0.8As. Very thin GaAs layers (50−500 Å) exhibit one−dimensional bound states above the band gap of bulk GaAs. The laser oscillation occurs at energies which are slightly below the exciton associated with the lowest energy n=1 bound state.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.50.-p Quantum optics

Push−pull thin−film optical modulator

J. C. Webster and F. Zernike

Appl. Phys. Lett. 26, 465 (1975); http://dx.doi.org/10.1063/1.88212 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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An electro−optic amplitude modulator was made by placing two channel−defined waveguide phase modulators in the legs of a Jamin interferometer. Using a novel detection method, modulation was observed up to 1.8 GHz, although the roll−off in the modulator response started at about 750 MHz. Full amplitude modulation was produced by 17 V, giving a power band width characteristic for the separate phase modulators of 200 μW/MHz for a modulation index of 1 rad.
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42.79.Hp Optical processors, correlators, and modulators
85.60.-q Optoelectronic devices

GaAs concentrator solar cell

L. W. James and R. L. Moon

Appl. Phys. Lett. 26, 467 (1975); http://dx.doi.org/10.1063/1.88213 (4 pages) | Cited 35 times

Online Publication Date: 2 September 2008

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For terrestrial applications, the figure of merit for photovoltaic solar energy conversion devices is watts output per dollar of cost. AlGaAs/GaAs heterojunction cells have a very favorable watts per dollar figure of merit when used at high values of sunlight concentration. An experimental 1/2−in.−diam cell was operated in air mass 1.4 sunlight with an output power density of 4.52 W/cm2 at an effective concentration of 312 suns with a power conversion efficiency of 17.5%. The same cell was operated at 200 °C with an output power density of 3.45 W/cm2 at a 14% efficiency. The efficiency of the cell was 23% with a fill factor of 0.85 at a lower concentration ratio which is obtainable using simple concentrator schemes.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

The use of a phase diagram as a guide for the growth of PbTe films

A. Lopez−Otero

Appl. Phys. Lett. 26, 470 (1975); http://dx.doi.org/10.1063/1.88214 (3 pages) | Cited 18 times

Online Publication Date: 2 September 2008

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A kind of pressure−composition (P−X) phase diagram was built for PbTe films grown by the hot−wall technique. This diagram proves to be a very valuable guide to prepare, reproducibly, films with a desired conduction type and carrier concentration. Although the diagram should not be interpreted as having general validity, we find that it has marked similarities with the equilibrium phase diagram obtained previously for PbTe.
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81.10.Bk Growth from vapor
72.80.Ey III-V and II-VI semiconductors

Transmission properties of a low−loss near−parabolic−index fiber

L. G. Cohen, P. Kaiser, J. B. Mac Chesney, P. B. O’Connor, and H. M. Presby

Appl. Phys. Lett. 26, 472 (1975); http://dx.doi.org/10.1063/1.88215 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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Pulse dispersion, refractive−index profile, and loss measurements were made on a low−loss graded−index optical fiber fabricated by a chemical vapor deposition technique. The transmission loss spectra had a minimum value of 3.8 dB/km at 1.06−μm wavelength. The core refractive index had a power−law profile with an exponential coefficient of 2.2±0.1. Mode−mixing effects and the near−parabolic−index profile in a 5.6−km extrapolated fiber length (actual length =1.12 km) reduces modal dispersion by a factor of 17 from the result expected for an ungraded step−index fiber.
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42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
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