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15 Apr 1975

Volume 26, Issue 8, pp. 415-486

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Spatially coherent radiation from an array of GaAs lasers

Elisabeth M. Philipp−Rutz

Appl. Phys. Lett. 26, 475 (1975); http://dx.doi.org/10.1063/1.88216 (3 pages) | Cited 32 times

Online Publication Date: 2 September 2008

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Spatially coherent radiation from a monolithic array of three homostructure GaAs lasers is reported. The three lasers, with their mirror faces antireflection coated, are operated in external optical cavity built of spherical lenses and plane mirrors. The spatially coherent beam formation makes use of the Fourier transformation property of the internal lenses. The transverse mode control is performed by a spatial filter. The optical peak power at room temperature of the device was measured to be 5 W, three times the power of a single laser in the array. From the synthesized far−field distribution which was evaluated, we conclude that the laser radiation is of spatial coherence.
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42.50.-p Quantum optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Heterojunction diodes of (AlGa)As−GaAs with improved degradation resistance

M. Ettenberg and H. Kressel

Appl. Phys. Lett. 26, 478 (1975); http://dx.doi.org/10.1063/1.88217 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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The resistance to gradual degradation of (AlGa)As−GaAs heterojunction structures prepared by liquid phase epitaxy is shown to be greatly improved by using a very fast cooling rate. The specific diodes described are of interest as high−speed (200 MHz) LED sources for fiber−optic communications. It is suggested that the improved degradation resistance results from a reduction in the arsenic vacancy concentration incorporated in the GaAs grown at the high cooling rates.
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85.60.Jb Light-emitting devices
68.55.-a Thin film structure and morphology

Observation of the intrinsic noise of a thin−film microbridge Josephson junction

S. S. Pei and J. E. Lukens

Appl. Phys. Lett. 26, 480 (1975); http://dx.doi.org/10.1063/1.88218 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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We have measured the intrinsic noise of a thin−film microbridge Josephson junction included as part of a closed superconducting ring. This microbridge, which was fabricated using electron beam lithography and has submicron dimensions, exhibited a noise magnitude which was in excellent agreement with that predicted for an ideal Josephson junction.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
72.70.+m Noise processes and phenomena
85.25.-j Superconducting devices

Energy analysis of large−angle keV electron scattering from solid targets

H. Schmoranzer, H. Grabe, and B. Schiewe

Appl. Phys. Lett. 26, 483 (1975); http://dx.doi.org/10.1063/1.88219 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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In a new technique for studying the scattering of fast electrons (E0⩾10 keV) into large angles (ϑ≳π/2) from solid targets the intensity and the energy distribution of scattered electrons are analyzed by means of silicon surface barrier detectors in the single−electron counting mode. Results of such studies at a scattering angel of 108° are reported for self−supporting gold foils of various thicknesses between 230 and 1505 Å. The high−intensity measuring accuracy recommends this method for precision determination of foil thicknesses.
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79.20.Kz Other electron-impact emission phenomena
34.80.-i Electron and positron scattering
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
FREE

Erratum: Velocity saturation in n−type AlxGa1−xAs single crystals

A. A. Immorlica and G. L. Pearson

Appl. Phys. Lett. 26, 486 (1975); http://dx.doi.org/10.1063/1.88252 (1 page)

Online Publication Date: 2 September 2008

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Abstract Unavailable
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43.10.Vx Errata
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.80.Ey III-V and II-VI semiconductors
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