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15 Dec 1975

Volume 27, Issue 12, pp. 639-709

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Complementary domain pyroelectric detectors with reduced sensitivity to mechanical vibrations and temperature changes

N. E. Byer, S. E. Stokowski, and J. D. Venables

Appl. Phys. Lett. 27, 639 (1975); http://dx.doi.org/10.1063/1.88343 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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LiTaO3 pyroelectric detectors have been fabricated in a novel complementary domain configuration that reduces the interference from vibrational noise sources and from changes in ambient temperature by over an order of magnitude relative to the performance of conventional pyroelectric detectors. Detectors made in this complementary domain configuration exhibit D’s in excess of 109 cm Hz1/2 W−1, and the measured D’s degrade less than 10% in the presence of accelerations as great as 0.05g in a 1‐Hz bandwidth, or temperature changes of 10 °C/min.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
77.70.+a Pyroelectric and electrocaloric effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Determination of energy band and surface‐state locations in GaAs using the separated‐medium surface‐acoustoelectric effect

H. Gilboa, M. E. Motamedi, and P. Das

Appl. Phys. Lett. 27, 641 (1975); http://dx.doi.org/10.1063/1.88344 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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The wavelength dependence of the peak transverse acoustoelectric voltage and the surface acoustic wave attenuation determine the energy band and the locations of the surface states in the energy gap of GaAs. The dependence is explained by direct optical transition between the bands and optical transition from surface states. This method needs no contacts to the semiconductor surface, is simple, very sensitive, and accurate.
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73.20.-r Electron states at surfaces and interfaces
72.50.+b Acoustoelectric effects
72.40.+w Photoconduction and photovoltaic effects

Low‐energy ion‐scattering spectrometry (ISS) of the SiO2/Si interface

William L. Harrington, Richard E. Honig, Alvin M. Goodman, and Richard Williams

Appl. Phys. Lett. 27, 644 (1975); http://dx.doi.org/10.1063/1.88345 (2 pages) | Cited 38 times

Online Publication Date: 2 September 2008

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The interface between Si and thermally grown SiO2 has been examined in detail by low‐energy 4He+ ion scattering. The oxide composition is shown to be stoichiometric to within 15–20 Å of the interface. ISS depth profiles clearly establish a region of excess Si that extends from the interface into the oxide for 15–20 Å, corresponding to four or five molecular layers. The amount of excess Si is calculated from the experimental data as 1.4×1014 atoms/cm2 per monomolecular layer (about 20% excess).
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.80.-d Chemical analysis and related physical methods of analysis
34.50.-s Scattering of atoms and molecules

Mechanism of electrochromism in WO3

H. N. Hersh, W. E. Kramer, and J. H. McGee

Appl. Phys. Lett. 27, 646 (1975); http://dx.doi.org/10.1063/1.88346 (3 pages) | Cited 46 times

Online Publication Date: 2 September 2008

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X‐ray photoelectron spectra of colored WO3 films, thermodynamic analysis of galvanic behavior of the tungstic oxide cathode, plus other new lines of evidence, clearly establish the previously uncertain mechanism of the electro‐optic effect in amorphous WO3, viz., a simultaneous injection of electrons and positive ions into a film via an electrochemical process, with the consequent development of a low‐x tungsten bronze. The positive ion, in both the films and in tungsten bronzes, remains fully ionized even in the presence of high densities of injected electrons.
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78.20.Jq Electro-optical effects
82.45.-h Electrochemistry and electrophoresis
82.47.-a Applied electrochemistry
85.60.Pg Display systems
FREE

Comment on ’’Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope 10B in Si’’

K. V. Vaidyanathan, Pallab K. Chatterjee, and B. G. Streetman

Appl. Phys. Lett. 27, 648 (1975); http://dx.doi.org/10.1063/1.88347 (2 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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A recent paper bases several conclusions regarding electronic and nuclear stopping powers of silicon for implanted boron on a few capacitance‐voltage measurements of impurity profiles. We suggest here that the accuracy of C‐V data is insufficient to distinguish small changes in projected range, and that measurements with better resolution are required.
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61.72.U- Doping and impurity implantation
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Frequency stabilization and absolute frequency measurements of a cw HF/DF laser

R. S. Eng and D. L. Spears

Appl. Phys. Lett. 27, 650 (1975); http://dx.doi.org/10.1063/1.88348 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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A transverse‐flow mixing HF/DF laser transition was frequency stabilized to better than 500 kHz relative to the second harmonic of a CO laser using a heterodyne technique. An absolute frequency of 110 725 697.4±7 MHz was measured for the 1‐OP (6) line of the HF laser, which represents a factor of 100 improvement in accuracy over existing data.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.72.-g Optical sources and standards

Very low‐threshold double‐heterojunction AlxGa1−xAs injection lasers

M. Ettenberg

Appl. Phys. Lett. 27, 652 (1975); http://dx.doi.org/10.1063/1.88351 (3 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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Double‐heterojunction AlxGa1−xAs lasers have been prepared with a compositional discontinuity Δx at the heterojunctions of 0.45–0.68 and active region widths of ∼0.1 μm. These devices have the lowest room‐temperature threshold current densities (475 A/cm2) yet reported, with a differential quantum efficiency of 40% or more.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
68.55.-a Thin film structure and morphology

Luminescence due to iron centers in lithium niobate

R. Parsons, W. D. Cornish, and L. Young

Appl. Phys. Lett. 27, 654 (1975); http://dx.doi.org/10.1063/1.88352 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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A luminescence band at 770 nm due to iron centers has been observed in lithium niobate crystals treated at 520 °C in lithium carbonate. Without this treatment only a broad background luminescence was observed. The main effect of the treatment is to reduce iron centers to the Fe2+ state but some evidence was found that destruction of shallow traps is also involved in increasing the luminescence.
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78.55.-m Photoluminescence, properties and materials
42.40.Ht Hologram recording and readout methods
72.40.+w Photoconduction and photovoltaic effects

Vibration‐vibration pumping of carbon monoxide initiated by an optical source

J. W. Rich, R. C. Bergman, and J. W. Raymonda

Appl. Phys. Lett. 27, 656 (1975); http://dx.doi.org/10.1063/1.88326 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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A steady‐state nonequilibrium population distribution of the vibrational states of carbon monoxide has been produced by optical pumping. A supersonic flow CO laser was used to excite a flowing mixture of CO which is pressure broadened by argon. A V‐V pumped nonequilibrium distribution was measured over the first 30 vibrational states of CO.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Ez Rotational and vibrational energy transfer
82.20.Rp State to state energy transfer
05.70.Ln Nonequilibrium and irreversible thermodynamics

Improved cw laser action on the 118.6‐ and 220‐μm H20 transitions using helium and hydrogen

P. Woskoboinikow and W. C. Jennings

Appl. Phys. Lett. 27, 658 (1975); http://dx.doi.org/10.1063/1.88327 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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The power of a cw water‐vapor laser operating on the far‐infrared transitions of 118.6 and 220 μm has been considerably improved by the use of helium and hydrogen gas additives. The laser power on the 118.6‐μm transition has been increased by an order of magnitude from 1.5 to 15 mW in a nonoptimized cavity. For the same discharge current of 1.8 A, the power on the 220‐μm line has been increased from 0.26 to 1.3 mW.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Mode locking of a He‐Ne 3.39‐μm laser using strong internal phase modulation

Satoshi Konishi, Tetsuro Kobayashi, and Tadasi Sueta

Appl. Phys. Lett. 27, 660 (1975); http://dx.doi.org/10.1063/1.88328 (3 pages)

Online Publication Date: 2 September 2008

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The possibility of generating ultrashort optical pulses from narrow‐linewidth lasers by means of mode locking is discussed. An experiment using a He‐Ne 3.39‐μm laser and applying strong intracavity phase (FM) modulation of 580 MHz was performed to demonstrate the possibility. The oscillation bandwidth was observed to be increased over a frequency range of 7 GHz. The pulsewidth estimated from the power spectrum was about 170 ps, while the reciprocal of the linewidth was about 3 ns.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Stimulated Raman scattering at kHz pulse repetition rates

E. O. Ammann and Joel Falk

Appl. Phys. Lett. 27, 662 (1975); http://dx.doi.org/10.1063/1.88329 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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Stimulated Raman scattering (SRS) has been achieved at kHz pulse repetition rates. The Raman oscillator consists of a lithium iodate crystal placed inside a Nd:YAlO3 laser, with feedback provided at the Stokes wavelengths by mirrors surrounding the crystal. First and second Stokes outputs at 1.18 and 1.31 μm, respectively, were generated from oblique longitudinal‐optic (LO) phonons in the lithium iodate. These results open the possibility of realizing substantial average output powers from Raman oscillators for the first time.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

High‐pressure absorption spectrum of CO2 laser bands at 10 μm

J. L. Miller and E. V. George

Appl. Phys. Lett. 27, 665 (1975); http://dx.doi.org/10.1063/1.88330 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The absorption coefficient at the center of several lines of the 961‐ and 1064‐cm−1 bands of CO2 has been measured for CO2 and mixtures of CO2 and N2 and He at absolute pressures to 18 atm. The data are in good agreement with the theory of pressure‐broadened non‐Lorentzian overlapping lines, which predicts greater peak absorption than theories that calculate the spectrum as a sum of Lorentzian‐shaped lines.
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33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Ez Rotational and vibrational energy transfer

Pump absorption and saturation in the CH3F 496‐μm laser

D. T. Hodges and J. R. Tucker

Appl. Phys. Lett. 27, 667 (1975); http://dx.doi.org/10.1063/1.88331 (3 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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Results are presented from a series of diagnostic experiments designed to measure the fundamental absorption parameters in CH3F for the P (20) CO2 laser line at 9.55 μm. These parameters include the small‐signal absorption coefficient, the saturation intensity for the absorbing transition, and the homogeneous linewidth. These data provide a quantitative characterization of the pumping process for the cw CH3F laser operating at 496 μm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.25.Bs Wave propagation, transmission and absorption
33.20.-t Molecular spectra

D2‐CO2 and D2‐N2O electric discharge gas‐dynamic lasers

J. A. Stregack, B. L. Wexler, and G. A. Hart

Appl. Phys. Lett. 27, 670 (1975); http://dx.doi.org/10.1063/1.88332 (2 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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cw CO2 and N2O lasing has been obtained in a new electric discharge gas‐dynamic laser device. The device consists of a subsonic plenum discharge region where vibrational excitation occurs, a supersonic nozzle array where the laser species is injected, and a supersonic cavity where mixing, energy transfer, and lasing occur. In the present experiments both CO2 and N2O are pumped by energy transfer from D2 excited in the discharge. Comparisons are made for CO2 pumped by both N2 and D2, and N2O and CO2 pumped by D2.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Ez Rotational and vibrational energy transfer
34.80.Gs Molecular excitation and ionization

Rotational population transfer in HF

J. J. Hinchen

Appl. Phys. Lett. 27, 672 (1975); http://dx.doi.org/10.1063/1.88333 (2 pages) | Cited 26 times

Online Publication Date: 2 September 2008

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Population transfer between rotational levels in HF was observed using double resonance with two HF lasers. Rates for the transfer in v=1 from J=3 to J=4, 5, 6, and 7 were found in the range of 107 sec−1 Torr−1. The rates depended on both gas pressure and on the ΔJ separation between levels of transfer.
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34.50.Ez Rotational and vibrational energy transfer
33.40.+f Multiple resonances (including double and higher-order resonance processes, such as double nuclear magnetic resonance, electron double resonance, and microwave optical double resonance)
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Output flux instabilities in a flowing‐gas cw CO2 electric discharge laser

M. J. Yoder and D. R. Ahouse

Appl. Phys. Lett. 27, 673 (1975); http://dx.doi.org/10.1063/1.88357 (4 pages) | Cited 13 times

Online Publication Date: 2 September 2008

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Temporal measurements of laser output flux of a flowing‐gas cw CO2 electron‐beam‐sustainer electric discharge laser exhibit large fluctuations. The amplitude of the fluctuations varies from 20 to 100% depending on cavity pressure, unstable resonator output coupling, and discharge specific power loading. Sharp discontinuities are observed in the laser medium when output flux is extracted. Gain measurements made simultaneously with output flux extraction show large fluctuations both above and below cavity threshold. These results are consistent with a basic self‐oscillation instability mechanism proposed for fast‐flow cw lasers using unstable resonators.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams

Polarization effects in holographic multiplexing

Hiroshi Okayama

Appl. Phys. Lett. 27, 676 (1975); http://dx.doi.org/10.1063/1.88334 (3 pages)

Online Publication Date: 2 September 2008

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The polarization characteristics of holograms multiplexed with the object beam of an E mode and with that of an H mode are compared. Holographic multiplexing is carried out by the technique of the Fourier transform hologram using a mask of the sector type. The characteristics obtained are evaluated by measurements of diffraction efficiencies. It is found that the diffraction efficiencies of holograms are improved by about 26.9% by changing the polarization mode of an object beam at the second exposure.
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42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
42.40.Ht Hologram recording and readout methods

High‐pressure infrared Ar‐Xe laser system: Ionizer‐sustainer mode of excitation

L. A. Newman and T. A. DeTemple

Appl. Phys. Lett. 27, 678 (1975); http://dx.doi.org/10.1063/1.88335 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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Laser action on neutral Xe transitions has been achieved at 1‐atm pressure in Ar‐Xe and He‐Xe mixtures excited in an ionizer‐sustainer mode of discharge. A number of near‐infrared lines oscillated in both mixtures with the strongest at 1.73 μm in Ar‐Xe. Over‐all conversion efficiencies of 0.2% in He‐Xe and 1% in Ar‐Xe were obtained with resulting output powers of 100–200 kW. These represent an order‐of‐magnitude increase in power, energy per pulse, and efficiency over previously reported observations on conventional transverse discharge lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
51.70.+f Optical and dielectric properties
52.80.Sm Magnetoactive discharges (e.g., Penning discharges)

A fast scalable switching technique for high‐power CO2 laser radiation

A. J. Alcock, P. B. Corkum, and D. J. James

Appl. Phys. Lett. 27, 680 (1975); http://dx.doi.org/10.1063/1.88336 (3 pages) | Cited 36 times

Online Publication Date: 2 September 2008

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Fast switching of high‐power 10‐μm radiation by reflection from optically induced carriers in polycrystalline germanium has been demonstrated. Initial studies carried out with a single‐mode TEA CO2 laser and a 2‐nsec ruby laser pulse have resulted in the generation of synchronized ∼2‐nsec pulses of 0.69‐ and 10‐μm wavelength. Potential applications of this technique include the selection of single high‐energy pulses from the mode‐locked output of large‐aperture CO2 lasers.
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42.79.Hp Optical processors, correlators, and modulators
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
72.30.+q High-frequency effects; plasma effects

LiNdP4O12 laser pumped with an AlxGa1−xAs electroluminescent diode

Masatoshi Saruwatari, Tatsuya Kimura, Tomoaki Yamada, and Jun’ichi Nakano

Appl. Phys. Lett. 27, 682 (1975); http://dx.doi.org/10.1063/1.88337 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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Using an incoherent AlxGa1−xAs light‐emitting diode (LED) as a pump source, pulsed laser oscillation was observed in a 300‐μm‐thick LiNdP4O12 crystal cooled to −35 °C. The oscillation threshold power density is 8.2 W/cm2 for the LED pump, and is compared with that for an Ar laser pump and theoretical values. The temperature dependence of oscillation threshold and optical round‐trip loss are discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
85.60.Jb Light-emitting devices
32.80.Xx Level crossing and optical pumping

Controlled picosecond gating and amplification of ultrafast optical signals

G. L. Olson and G. E. Busch

Appl. Phys. Lett. 27, 684 (1975); http://dx.doi.org/10.1063/1.88338 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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A positively gated ultrafast amplifying shutter is described. The population inversion created by the action of an intense picosecond pulse in a saturable absorbing dye provides the means for high gain amplification of optical signals. The introduction of a second pulse at a wavelength within the emission band of the dye rapidly depletes the inversion and thus terminates the gain. Gated amplifier gains from 50 to 100 are reported and control of delays between the pulses allows shutter aperture times to be reproducibly varied from ∼12 to ≳60 psec.
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42.62.-b Laser applications
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters

Tunable distributed‐feedback dye laser

Yoshinobu Aoyagi, Takashi Aoyagi, Koichi Toyoda, and Susumu Namba

Appl. Phys. Lett. 27, 687 (1975); http://dx.doi.org/10.1063/1.88339 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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A tuning range of more than 160 Å was obtained in a rhodamine 6G distributed‐feedback laser by using a mechanical tuning method. An electromechanical tuning of about 10 Å was also obtained.
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42.55.Mv Dye lasers
07.60.Rd Visible and ultraviolet spectrometers
42.72.-g Optical sources and standards

Electron transport at high fields in a‐SiO2

D. K. Ferry

Appl. Phys. Lett. 27, 689 (1975); http://dx.doi.org/10.1063/1.88340 (2 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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An iterative‐integral technique is used to determine the velocity of hot electrons in a‐SiO2. Deviations from linearity begin for fields above 8×105 V/cm, and saturation of the velocity‐field curve sets in for fields above 1×106 V/cm.
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72.20.Ht High-field and nonlinear effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ng Disordered solids

Photocurrent suppression in heterojunction solar cells

R. L. Anderson

Appl. Phys. Lett. 27, 691 (1975); http://dx.doi.org/10.1063/1.88341 (3 pages) | Cited 37 times

Online Publication Date: 2 September 2008

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A thin insulating layer at the material interface of a heterojunction solar cell can cause a suppression of photocurrent. This photocurrent suppression increases with increasing illumination intensity and interfacial layer thickness. Although the presence of such an interfacial layer can increase the conversion efficiency of solar cells at low illumination intensities, the photocurrent suppression effect precludes its use in systems using appreciable solar concentration.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
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