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1 Jul 1975

Volume 27, Issue 1, pp. 1-52


Surface acoustic wave tapped correlator using time integration

O. Menager and B. Desormiere

Appl. Phys. Lett. 27, 1 (1975); http://dx.doi.org/10.1063/1.88272 (2 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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A new alternative to the nonlinear delay line convolver is presented, one which has the special advantage of being able to correlate millisecond signals without time inversion. An experimental verification achieved with a simple device is described and the possible use of a more complete system is explained.
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72.50.+b Acoustoelectric effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Nonlinear interaction between oppositely propagating surface waves

T. C. Padmore and G. I. Stegeman

Appl. Phys. Lett. 27, 3 (1975); http://dx.doi.org/10.1063/1.88259 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The nonlinear interaction between two oppositely directed surface acoustic waves (SAW) is analyzed. It is shown that the surface boundary conditions lead to the generation of up to three bulk waves at the sum frequency of the two input waves. The interaction is characterized by two frequency‐independent parameters which are related to the total surface displacement at the sum frequency and the strength of the bulk waves generated. These parameters are calculated for a number of materials of technological interest.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.25.-x Nonlinear acoustics

Zinc‐oxide–on–silicon acoustically scanned imager with positive sensitivity and storage capabilities

L. A. Coldren

Appl. Phys. Lett. 27, 6 (1975); http://dx.doi.org/10.1063/1.88265 (3 pages) | Cited 11 times

Online Publication Date: 2 September 2008

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The use of remotely launched acoustic surface waves to scan image information on a zinc‐oxide–on–silicon monolithic geometry is demonstrated. The dynamic range for the readout can be greatly enhanced by using pulsed bias signals which invert the surface of the n‐on‐n+ silicon substrate. Images may also be stored in the form of trapped charge replicas in the zinc oxide, and subsequently they may be nondestructively read out using the scanning surface waves.
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72.50.+b Acoustoelectric effects
42.30.Va Image forming and processing
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Acoustic surface wave velocity perturbations in LiNbO3 by diffusion of metals

R. V. Schmidt

Appl. Phys. Lett. 27, 8 (1975); http://dx.doi.org/10.1063/1.88266 (3 pages) | Cited 16 times

Online Publication Date: 2 September 2008

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Thin films of Ti, Ni, and Cr have been diffused into LiNbO3 to form regions of increased acoustic surface wave velocity. Velocity changes as large as 1.4% have been observed. Diffused strips of Ti have been found suitable for fabricating efficient grating reflectors.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
66.30.J- Diffusion of impurities

Backscatter measurements from laser‐produced plasmas at 10.6 μm 

K. B. Mitchell, T. F. Stratton, and P. B. Weiss

Appl. Phys. Lett. 27, 11 (1975); http://dx.doi.org/10.1063/1.88267 (3 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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The fraction of light backscattered from plasmas produced by 10.6‐μm laser light focused on polyethylene slab targets is ∼5% of the incident for intensities between 1013 and 1015 W/cm2. Time‐integrated measurements of the spectrum of backscattered light near 10.6 μm are presented.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Negative ion species in CO2‐N2‐He discharges

J. F. Prince and A. Garscadden

Appl. Phys. Lett. 27, 13 (1975); http://dx.doi.org/10.1063/1.88268 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The identification of the negative ion species created in a low‐pressure CO2‐N2‐He electric discharge has been accomplished using an on‐line quadrupole mass spectrometer. In a slow‐flow 1‐Torr cylindrical (22‐mm‐i.d.) discharge plasma, the prominent negative ions are NO−2, NO−3, O−2, O−, and CO−3. The changes in relative composition are presented for the current range 0.2–60 mA.
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52.80.-s Electric discharges
52.70.Nc Particle measurements

High‐pressure glow discharge using a differentially pumped cathode

J. Tulip and H. J. J. Seguin

Appl. Phys. Lett. 27, 15 (1975); http://dx.doi.org/10.1063/1.88269 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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A high‐pressure glow discharge in flowing gases is described. The cathode surface and the discharge glow are isolated by a mica sheet with a matrix of holes drilled into it. The cathode is differentially pumped to a pressure of approximately 1 Torr. This electrode structure has produced a discharge power density of 15 W/cm3 when the gas residence time is 3 ms.
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52.80.Hc Glow; corona

Depth distribution of gallium ions implanted into silicon crystals

G. Dearnaley, G. A. Gard, W. Temple, and M. A. Wilkins

Appl. Phys. Lett. 27, 17 (1975); http://dx.doi.org/10.1063/1.88270 (2 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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Radioactive 72Ga+ ions have been implanted at room temperature into misoriented silicon crystals to a low fluence of 1013 ions/cm2. The resulting depth distribution, measured by anodic stripping, shows a prominent penetrating tail. Previously, such tails have been observed only in high‐temperature bombardments and have therefore been attributed to an enhanced diffusion mechanism. It is shown that the scattering of ions into inclined planar or axial channels can account for all the Ga distributions observed. Some consequences for Si device fabrication are discussed.
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81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors
61.72.U- Doping and impurity implantation
85.30.-z Semiconductor devices

Electro‐optic amplitude modulation using three‐dimensional LiNbO3 waveguide fabricated by TiO2 diffusion

Juichi Noda, Naoya Uchida, Shoichi Saito, Tadashi Saku, and Makoto Minakata

Appl. Phys. Lett. 27, 19 (1975); http://dx.doi.org/10.1063/1.88271 (3 pages) | Cited 33 times

Online Publication Date: 2 September 2008

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An almost single‐mode waveguiding layer has been fabricated by thermal diffusion of TiO2 into LiNbO3. The refractive‐index change in the layer is 2–3×10−3 for both ne and no, and the propagation loss is 0.7–0.8 dB/cm. The electro‐optic coefficients are found to be nearly equal to those of the bulk crystal. An amplitude modulation has been made with a stripe waveguide 10 μm wide and planar electrodes. The half‐wave voltage is 17 V and the maximum extinction ratio is 12 dB.
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42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
42.79.Gn Optical waveguides and couplers

Observation of adiabatic rapid passage utilizing narrow infrared saturation resonances

S. M. Hamadani, A. T. Mattick, N. A. Kurnit, and A. Javan

Appl. Phys. Lett. 27, 21 (1975); http://dx.doi.org/10.1063/1.88273 (4 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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Population inversion by adiabatic rapid passage (ARP) utilizing narrow saturation resonances is observed for an infrared transition of NH3. The population change produced by sweeping the frequency of a strong saturating laser field through the center of a Doppler‐broadened absorption line is probed by a weak counterpropagating field as in a Lamb‐dip experiment. When the ARP conditions are satisfied, inversion of population is detected as amplification of the probe wave near the line center.
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32.80.Xx Level crossing and optical pumping
33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)

Doped CO2 TEA laser

B. J. Reits and A. H. M. Olbertz

Appl. Phys. Lett. 27, 24 (1975); http://dx.doi.org/10.1063/1.88274 (2 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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An extremely weak uv source conditions a large CO2 laser gas discharge with the aid of the seed gas tri‐n‐propylamine. With roughened Rogowski‐shaped electrodes a glow discharge is achieved without a uv source. Evidence exists that the seed gas plays a role in the gas discharge itself.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Sm Magnetoactive discharges (e.g., Penning discharges)

Short‐circuit capacitance of illuminated solar cells

Arnold R. Moore

Appl. Phys. Lett. 27, 26 (1975); http://dx.doi.org/10.1063/1.88275 (4 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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The recently observed short‐circuit capacitance of illuminated photovoltaic solar cells has been attributed to injection of minority carriers into the base by the perfectly shorted n‐p junction, a result incompatible with conventional junction theory. In the present letter, this capacitance is treated as the result of voltage modulation of the space‐charge width and subsequent redistribution of the minority carriers in the base, all in the context of conventional junction theory. Comparison with experimental results shows that this model gives the correct magnitude of the effect and predicts the dependence on spectral distribution of the illumination and the circuit test frequency.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
85.30.Kk Junction diodes

Characterization of trapping kinetics from the lifetime dependence of thermally stimulated conductivity spectra

S. Rabie and N. Rumin

Appl. Phys. Lett. 27, 29 (1975); http://dx.doi.org/10.1063/1.88254 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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A technique is proposed for identifying trapping kinetics from thermally stimulated conductivity TSC) measurements, which is based on the influence of lifetime on TSC spectra. The same technique may be used to measure the trap energy if fast trapping dominates. The usefulness of the method is illustrated with some results of measurements on Zn‐compensated silicon.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Fast frequency stabilization of a cw dye laser

R. L. Barger, J. B. West, and T. C. English

Appl. Phys. Lett. 27, 31 (1975); http://dx.doi.org/10.1063/1.88255 (3 pages) | Cited 25 times

Online Publication Date: 2 September 2008

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A system is described for stabilizing a cw dye laser frequency to a high‐finesse optical cavity. The length of this optical cavity is locked to a CH4‐stabilized He‐Ne laser with a tunable frequency‐offset technique. A very fast servo system using an intracavity KD∗P crystal), a long dye laser cavity, and the stabilized optical cavity result in an absolute frequency stability of 1 kHz for an integration time of 10−4 sec and 300 Hz for 300 sec. Intensity is stabilized to one part in 104.
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42.55.Mv Dye lasers

Hole injection into silicon nitride: Dark current dependence on electrode materials and insulator thickness

P. C. Arnett and D. J. DiMaria

Appl. Phys. Lett. 27, 34 (1975); http://dx.doi.org/10.1063/1.88256 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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Dark currents in MNS capacitors are studied as a function of metal electrode material and insulator thickness. Dark currents sensitively reflect different electrode materials for thin (∼200 Å) nitride films. Thus, it is found that high‐work‐function metals increase conduction under metal positive bias by enhanced hole injection and low‐work‐function metals increase conduction under metal negative bias by enhanced electron injection. Similar polarity differences are observed betwen n‐type and p‐type degenerate Si substrates. These contact differences disappear as the nitride becomes thicker and the thickness of trapped space‐charge layers near the contacts becomes small compared to the nitride thickness.
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73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors

High‐forward‐voltage phenomenon in injection GaAs/Ge heterojunctions

F. C. Jain and M. A. Melehy

Appl. Phys. Lett. 27, 36 (1975); http://dx.doi.org/10.1063/1.88257 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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A significantly high non‐Ohmic forward voltage has been observed in n‐GaAs/p‐Ge and p‐GaAs/n‐Ge injection heterojunction diodes which have hard reverse electrical characteristics and whose wide‐gap emitters were of relatively low doping levels. Theory and experiment are compared and conditions for enhancing this phenomenon are stated. An SEM micrograph of the grown Ge epitaxial layer is included and growth conditions are described.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Effect of electron‐electron and impurity scattering on hot electron repopulation in n‐Si at 77 K

James G. Nash and James W. Holm‐Kennedy

Appl. Phys. Lett. 27, 38 (1975); http://dx.doi.org/10.1063/1.88258 (4 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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The transport roles of electron‐electron (e‐e) and intravalley impurity scattering (neutral and ionized) in n‐Si at 77 K were studied under high‐electric‐field (0–3000 V/cm) nonequilibrium conditions, by comparing the theoretical and experimental ratio of 〈111〉 to 〈100〉 field‐dependent conductivity over a range of free‐electron concentrations that fully encompasses this ratio’s variation with concentration (2×1013–2×1016 cm−3). Theoretical calculations were performed using a numerical technique which allows an ’’exact’’ solution to the Boltzmann transport equation. Electron‐electron scattering was included in the calculation using the Fokker‐Plank formulation. It was found that e‐e scattering was primarily responsible for the decrease in the conductivity ratio with increasing concentration through its effect on repopulation; both intravalley and intervalley e‐e scattering were found to be important. Neutral impurity scattering also had a significant effect on repopulation. An apparent increase in free‐electron concentration with field was observed in the more heavily doped samples.
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72.20.Ht High-field and nonlinear effects
72.80.Cw Elemental semiconductors

Silicon‐ and selenium‐ion‐implanted GaAs reproducibly annealed at temperatures up to 950 °C

J. P. Donnelly, W. T. Lindley, and C. E. Hurwitz

Appl. Phys. Lett. 27, 41 (1975); http://dx.doi.org/10.1063/1.88260 (3 pages) | Cited 44 times

Online Publication Date: 2 September 2008

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A pyrolytic Si3N4 encapsulation technique has been used to permit reproducible annealing of implanted GaAs at temperatures as high as 950 °C. At low doses, electrical activity ≳70% has been achieved for both Si and Se. At high doses, sheet carrier concentrations and sheet resistivities of 1.8×1014/cm2 and 20 Ω/☒, respectively, for Si and 7×1013/cm2 and 44 Ω/☒, respectively, for Se have been measured.
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61.72.U- Doping and impurity implantation

Inverted silicon island edge observation in SOS/CMOS transistors by SEM EBIC methods

J. L. Gates and O. K. Griffith

Appl. Phys. Lett. 27, 43 (1975); http://dx.doi.org/10.1063/1.88261 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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Impurity redistribution during thermal oxidation in the n‐channel transistor of SOS/CMOS can result in an inversion of silicon material type (from p to n) along the island edge and extending from drain to source. This inverted island edge produces excessive drain‐to‐source current leakage. We show that the electron‐beam‐induced‐current (EBIC) mode of operation in the scanning electron microscope (SEM) is an effective method of observing inverted island edges.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

GaAs‐AlxGa1‐xAs injection lasers with distributed Bragg reflectors

F. K. Reinhart, R. A. Logan, and C. V. Shank

Appl. Phys. Lett. 27, 45 (1975); http://dx.doi.org/10.1063/1.88262 (4 pages) | Cited 51 times

Online Publication Date: 2 September 2008

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Room‐temperature operation of an optically integrated double heterostructure (DH) GaAs‐AlxGa1‐xAs injection laser with a distributed Bragg reflector (DBR), with threshold current densities of 5 kA/cm2 is reported. The DBR was in the form of a third‐order grating which was ion milled on a passive single heterostructure (SH) waveguide section with the latter taper coupled to the active DH section. The observed half‐power spectral bandwidth was ≲1 Å. A highly collimated beam output with a half‐power divergence angle of ≲0.3° was also achieved by coupling the scattered light from the oil‐immersed grating at the Bragg angle with a prism.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.82.-m Integrated optics

Polarization effects in four‐photon conductivity in quartz

Demetrius D. Venable and R. B. Kay

Appl. Phys. Lett. 27, 48 (1975); http://dx.doi.org/10.1063/1.88263 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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We report on photoconductivity in SiO2 induced by the absorption of four Nd‐glass laser photons in the intensity domain of 108 W/cm2. The relative cross section for circular versus linear polarization of the laser photons is found to be 2.05±0.9.
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72.40.+w Photoconduction and photovoltaic effects

Magnetization distributions in Permalloy bubble‐domain propagation circuits

P. K. George

Appl. Phys. Lett. 27, 50 (1975); http://dx.doi.org/10.1063/1.88264 (2 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Recent magneto‐optical measurements of the magnetization in Permalloy elements of bubble‐domain propagation circuits yield magnetization profiles which are similar to those calculated on the basis of a continuum model. A quantitative comparison based upon scaling existing theoretical results for isolated elements confirms an interpretation of the data in terms of weakly interacting elements for the cases considered. The over‐all comparison adds further evidence to support a continuum model for the magnetization in the Permalloy elements.
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75.60.Ch Domain walls and domain structure
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
FREE

Erratum: Energy density and time constant of heavy‐ion‐induced elastic‐collision spikes in solids

Peter Sigmund

Appl. Phys. Lett. 27, 52 (1975); http://dx.doi.org/10.1063/1.88552 (1 page) | Cited 55 times

Online Publication Date: 2 September 2008

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Abstract Unavailable
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43.10.Vx Errata
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
34.50.-s Scattering of atoms and molecules
29.40.-n Radiation detectors
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