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15 Nov 1975

Volume 27, Issue 10, pp. 517-572


Doubling acousto‐optic deflector resolution utilizing second‐order birefringent diffraction

I. C. Chang and D. L. Hecht

Appl. Phys. Lett. 27, 517 (1975); http://dx.doi.org/10.1063/1.88290 (2 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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We have demonstrated operation of birefringent phase‐matched TeO2 deflectors, utilizing the second optical diffraction order, which maintain high diffraction efficiency with doubled resolution. 1200‐spot resolution was achieved with 25‐μsec access time.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Nonlinear steering and mixing of acoustic waves in arsenic trisulfide

J. M. Rouvaen, R. Torguet, E. Bridoux, and F. Haine

Appl. Phys. Lett. 27, 519 (1975); http://dx.doi.org/10.1063/1.88291 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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Very efficient mixing has been observed between a longitudinal wave and a transverse acoustic wave propagating noncollinearly inside an arsenic trisulfide delay line. The scattering of the longitudinal wave by the transverse one has also been investigated.
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43.25.-x Nonlinear acoustics
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Correlation between blister skin thickness, the maximum in the damage‐energy distribution, and projected ranges of He+ ions in metals: Nb

M. Kaminsky, S. K. Das, and G. Fenske

Appl. Phys. Lett. 27, 521 (1975); http://dx.doi.org/10.1063/1.88292 (3 pages) | Cited 18 times

Online Publication Date: 2 September 2008

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The skin thicknesses of blisters formed on niobium by helium‐ion irradiation at room temperature for energies from 100 to 1500 keV have been measured. The projected ranges of helium ions in Nb for this energy range were calculated using either Brice’s formalism or the one given by Schiott. For the damage‐energy distribution Brice’s formalism was used. The measured skin‐thickness values corrleate more closely with the maxima in the projected‐range probability distributions than with the maxima in the damage‐energy distributions. The results are consistent with our model for blister formation and rupture proposed earlier.
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29.40.-n Radiation detectors
61.72.U- Doping and impurity implantation

Observation of an x‐ray shuttering mechanism utilizing acoustic interruption of the Borrmann effect

Allan Hauer and S. J. Burns

Appl. Phys. Lett. 27, 524 (1975); http://dx.doi.org/10.1063/1.88293 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Observations of acoustic interruption of x‐ray transmission through a high‐quality silicon crystal with a low dislocation density are described. Borrmann x‐ray topographs are used to visualize the acoustic strain field. Meausrements were made of the variation of x‐ray transmission vs acoustic power. The possible application of this effect as a fast acousto‐optic switch mechanism is discussed.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.70.Ck X-ray scattering
07.85.-m X- and γ-ray instruments

Backscattering of keV molecular hydrogen ions from Au surfaces

W. Eckstein, H. Verbeek, and S. Datz

Appl. Phys. Lett. 27, 527 (1975); http://dx.doi.org/10.1063/1.88294 (2 pages) | Cited 47 times

Online Publication Date: 2 September 2008

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Appreciable quantities of molecular hydrogen ions have been observed in backscattering of 5‐keV D3+ from Au. At a scattering angle of 10° the D+2/D+1 ratio was 5×10−2 and D+3/D+1=2×10−4. The ratios decrease with increasing scattering angle, but D+2 is observable at angles up to 50°.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Electronic structure of Al and Si dissolved in transition or noble metals studied by soft x‐ray spectroscopy

K. Tanaka, M. Matsumoto, S. Maruno, and A. Hiraki

Appl. Phys. Lett. 27, 529 (1975); http://dx.doi.org/10.1063/1.88295 (3 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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Kβ emission spectra from Al and Si dissolved in transition (Fe and Ni) or noble (Cu) metals as dilute impurities (∼10 at.%) were investigated. In the alloys of the same host metals the spectra of Al and Si bear a striking resemblance to each other. However, there are several important differences between the shapes of the spectra from transition‐ and noble‐metal‐based alloys. All these features of the spectra can be reasonably interpreted in terms of the theoretical calculation by Terakura on the energy distribution of the local density of states of the impurity atoms.
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32.30.Rj X-ray spectra
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
78.70.En X-ray emission spectra and fluorescence

Integrated electro‐optic intracavity frequency modulation of double‐heterostructure injection laser

F. K. Reinhart and R. A. Logan

Appl. Phys. Lett. 27, 532 (1975); http://dx.doi.org/10.1063/1.88296 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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Integration of a taper‐coupled GaAs‐AlxGa1−xAs laser with a linear electro‐optic modulator permits efficient optical frequency modulation of the laser emission. The pulsed room‐temperature threshold current density of the device was 8 kA/cm2. Frequency modulation depth in excess of 15 GHz (corresponding to a wavelength shift of 0.4 Å) was obtained with a reverse bias change of 20 V across the modulator. Conversion of frequency modulation into intensity modulation was demonstrated with a characteristic power P0 of 10 μW/MHz for 90% intensity modulation. It is shown that reduction of P0 by an order of magnitude is easily feasible.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics
78.20.Jq Electro-optical effects
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Observation of resonance radiation pressure on an atomic vapor

J. E. Bjorkholm, A. Ashkin, and D. B. Pearson

Appl. Phys. Lett. 27, 534 (1975); http://dx.doi.org/10.1063/1.88297 (4 pages) | Cited 18 times

Online Publication Date: 2 September 2008

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We have used the resonance radiation pressure from 40 mW of cw dye laser light propagating axially down a tube filled with sodium vapor to increase the sodium pressure (density) up to 50% over a length of 20 cm. The magnitude of the effect agrees well with measurements of the absorbed power. These observations were made with the laser tuned to the low‐frequency side of the sodium D2 resonance line; for tuning to the high‐frequency side, an additional unexplained effect leading to density decreases was observed.
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32.70.Cs Oscillator strengths, lifetimes, transition moments
82.50.-m Photochemistry
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Application of scanning electron microscopy to determination of surface recombination velocity: GaAs

L. Jastrzebski, J. Lagowski, and H. C. Gatos

Appl. Phys. Lett. 27, 537 (1975); http://dx.doi.org/10.1063/1.88276 (3 pages) | Cited 81 times

Online Publication Date: 2 September 2008

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A method is reported for the determination of the surface recombination velocity by scanning electron microscopy; this method is based on an established relationship between the effective diffusion length of the minority carriers, the penetration depth of the electron beam, and the surface recombination velocity. Values of surface recombination velocity, up to about 2.5×106 cm/sec were determined in n‐type GaAs with a bulk minority‐carrier lifetime of the order of 10−8–10−10 sec; in GaAs, with carrier concentrations exceeding 1018 cm−3, recombination velocity of about 3×106 cm/sec represents a saturation value.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

Excitation of transversely excited CO2 waveguide lasers

O. R. Wood II, P. W. Smith, C. R. Adams, and P. J. Maloney

Appl. Phys. Lett. 27, 539 (1975); http://dx.doi.org/10.1063/1.88277 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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Using a preionization scheme based on the Malter effect, small‐signal gains ≳5%/cm at 10.6 μm ahve been produced in a 1‐mm2‐cross‐section waveguide CO2 amplifier at total operating pressures of 100–760 Torr. Comparisons are made between this preionization scheme and those using electron beams.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona

cw chemical transfer CO2 laser

D. J. Benard

Appl. Phys. Lett. 27, 542 (1975); http://dx.doi.org/10.1063/1.88278 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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The combustion of Mg vapor in N2O with He and Co2 diluents in a low‐loss coaxial laser cavity has resulted in cw oscillation at 10.6 μm. The performance characteristics of the flame laser in a coaxial geometry were found to differ significantly from those expected on the basis of previous gain measurements taken in a transverse flow configuration.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions
78.60.Ps Chemiluminescence

Electro‐optic light modulator with branched ridge waveguide

Yoshiro Ohmachi and Juichi Noda

Appl. Phys. Lett. 27, 544 (1975); http://dx.doi.org/10.1063/1.88279 (3 pages) | Cited 30 times

Online Publication Date: 2 September 2008

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A light modulator based on an electro‐optic phase modulation and an optical interference of Mach‐Zehnder type has been demonstrated. The modulator is constructed monolithically with a branching ridged optical waveguide on TiO2‐diffused LiNbO3. The half‐wave voltage is 19 V and the extinction ratio is 34%.
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42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
85.60.-q Optoelectronic devices

High‐power I2 laser in the 342‐nm band system

R. S. Bradford, E. R. Ault, and M. L. Bhaumik

Appl. Phys. Lett. 27, 546 (1975); http://dx.doi.org/10.1063/1.88280 (3 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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Strong laser emission was observed in the 342‐nm I2 band system from an e‐beam–excited mixture of Ar and CF3I (250 : 1) at a total pressure of 10 atm. Laser emission occurred simultaneously at 342.0, 342.3, 342.4, and 342.8 nm with a peak power of 3.6 MW in a 10‐nsec (FWHM) pulse.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Optimum tuning point of an optical parametric oscillator

D. F. Nelson and R. M. Mikulyak

Appl. Phys. Lett. 27, 548 (1975); http://dx.doi.org/10.1063/1.88281 (4 pages)

Online Publication Date: 2 September 2008

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We derive the mathematical condition for the existence in an optical parametric oscillator of an optimum tuning point (OTP), the point of maximum change of signal or idler frequency per unit perturbation by some applied influence. Computer calculations show that such a point exists in LiNbO3, KDP, ADP, LiIO3, and AgGaS2. A graphical interpretation of the OTP is presented. The pump frequency and crystal orientation at the OTP as well as expected tuning ranges for electric field tuning are given for the above five crystals.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Doppler‐free two‐photon electronic absorption of nitric oxide and benzene

J. A. Gelbwachs, P. F. Jones, and J. E. Wessel

Appl. Phys. Lett. 27, 551 (1975); http://dx.doi.org/10.1063/1.88282 (2 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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Doppler‐free electronic state absorption spectra of molecules have been recorded by means of counterpropagating‐beam two‐photon spectroscopy. The molecular transitions that were investigated were the A2Σ+1(v=0) ←X2Π1/2 (v=0) transition of nitric oxide and the 1B2u←1A1g, 1410 transition of benzene. Linewidths observed were less than the Doppler width for each transition.
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32.30.Jc Visible and ultraviolet spectra

Pulsed corona excitation of high‐power uv nitrogen lasers at pressures of 0–3 bar

H. M. von Bergmann, V. Hasson, and D. Preussler

Appl. Phys. Lett. 27, 553 (1975); http://dx.doi.org/10.1063/1.88283 (3 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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Stabilized pulsed corona‐type discharges can be used to pump uv laser efficiently at high pressures and on nanosecond time scales. This letter deals with the adaptation of this principle to the excitation of molecular nitrogen lasers at pressures ranging from 0 to 3 bar. Magewatt pulses of nanosecond duration may be obtained from a simple 25‐cm atmospheric‐pressure device. The electrical excitation is effected by a flat‐plate Blumlein circuit.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona

Efficient strip‐waveguide modulator

I. P. Kaminow, L. W. Stulz, and E. H. Turner

Appl. Phys. Lett. 27, 555 (1975); http://dx.doi.org/10.1063/1.88284 (3 pages) | Cited 28 times

Online Publication Date: 2 September 2008

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A strip‐waveguide electro‐optic phase modulator has been fabricated in Ti‐diffused LiNbO3. For a modulation index of 1 rad at 0.63 μm, the modulating voltage is 0.3 V and the power is 1.7 μW/MHz of bandwidth.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
78.20.Jq Electro-optical effects
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Laser action on the 342‐nm molecular iodine band

J. J. Ewing and C. A. Brau

Appl. Phys. Lett. 27, 557 (1975); http://dx.doi.org/10.1063/1.88285 (3 pages) | Cited 29 times

Online Publication Date: 2 September 2008

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A new laser operating on the 342‐nm band of I2 is reported. Electron‐beam‐excited mixtures of argon with CF3I and HI produced this I2 laser. The excited state of this laser is probably formed by ion recombination reactions, and a plausible mechanism is given.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence

Hopping conduction in Langmuir films

M. Sugi, T. Fukui, and S. Iizima

Appl. Phys. Lett. 27, 559 (1975); http://dx.doi.org/10.1063/1.88286 (3 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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The dc conductance of Langmuir films of the Cd salts of fatty acids CH3‐ (CH2)n‐2‐COOH, with various n, has been measured at liquid‐nitrogen temperature. The conductivity decreases exponentially with increasing chain length of the fatty acid molecules. This agrees well with the theoretical prediction for hopping conduction in a multilayer system associated with interface states.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Rw Metal-insulator-metal structures
73.61.Ng Insulators

Low‐threshold room‐temperature double‐heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx@qL injection lasers at 1‐μm wavelengths

R. E. Nahory and M. A. Pollack

Appl. Phys. Lett. 27, 562 (1975); http://dx.doi.org/10.1063/1.88287 (3 pages) | Cited 25 times

Online Publication Date: 2 September 2008

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Double‐heterostructure (DH) injection lasers based on the GaAs1−xSbx/AlyGa1−yAs1−xSbx@qL system have been fabricated using liquid phase epitaxial growth techniques and operated at room temperature at wavelengths in the 1‐μm region. The observed room‐temperature threshold current densities, as low as 2100 A cm−2, are comparable to those of GaAs/AlGaAs devices of similar geometry.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
85.60.Jb Light-emitting devices

Self‐compensation of donors in high‐purity GaAs

C. M. Wolfe and G. E. Stillman

Appl. Phys. Lett. 27, 564 (1975); http://dx.doi.org/10.1063/1.88288 (4 pages) | Cited 58 times

Online Publication Date: 2 September 2008

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Column‐IV (Si, Ge, and Sn) and column‐VI (S, Se, and Te) impurities are used to dope high‐purity layers of vapor epitaxial GaAs. Resistivity and Hall data on a large number of samples show that the common donors in GaAs (assumed to be column‐IV impurities on gallium sites and column‐VI impurities on arsenic sites) are compensated by acceptor centers which are donor impurity‐vacancy complexes. These acceptor complexes are tentatively identified as column‐IV impurities on gallium sites associated with single gallium vacancies and column‐VI impurities on arsenic sites associated with single arsenic vacancies.
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78.40.Fy Semiconductors
72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.05.Cy Elemental semiconductors

Photoluminescence from Be‐implanted GaAs

Pallab K. Chatterjee, K. V. Vaidyanathan, W. V. McLevige, and B. G. Streetman

Appl. Phys. Lett. 27, 567 (1975); http://dx.doi.org/10.1063/1.88289 (3 pages) | Cited 19 times

Online Publication Date: 2 September 2008

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Low‐temperature (6 °K) photoluminescence data on Be‐implanted GaAs are presented. A luminescence band centered at 1.4902 eV is related to recombination involving the Be acceptor. Annealing to 900 °C with Si3N4 encapsulation is shown to optically activate the implanted Be and reorder the lattice. The ionization energy of Be is estimated to be 22±3 meV.
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78.55.-m Photoluminescence, properties and materials
78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation

Powder approach for multifilamentary niobium‐tin superconducting wire

K. Hemachalam and M. R. Pickus

Appl. Phys. Lett. 27, 570 (1975); http://dx.doi.org/10.1063/1.88298 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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Based on powder‐metallurgy techniques, a process to fabricate Nb3Sn multifilamentary superconducting wire is described. The current‐carrying capacity of the wire was above 2×105 A/cm2 at a steady transverse magnetic field of 50 kG and about 1×105 A/cm2 at 100 kG.
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74.25.-q Properties of superconductors
74.70.-b Superconducting materials other than cuprates

Diffraction effects in ferrofluids

Werner E. L. Haas and James E. Adams

Appl. Phys. Lett. 27, 571 (1975); http://dx.doi.org/10.1063/1.88299 (2 pages) | Cited 18 times

Online Publication Date: 2 September 2008

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Diffraction effects have been observed in ferrofluids in the presence of a magnetic field. The diffraction pattern from a laser beam normal to a thin layer of ferrofluid and normal to a magnetic field is confined to a plane also normal to the layer and normal to the field, indicating alignment of ferrofluid particles.
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75.50.Tt Fine-particle systems; nanocrystalline materials
78.20.Ls Magneto-optical effects
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