APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Dec 1975

Volume 27, Issue 11, pp. 575-636

Page 1 of 2 Pages Next Page | Jump to Page

Planar‐to‐homeotropic structure transition under electric field in an A‐phase smectic

M. Hareng, S. Le Berre, and J. J. Metzger

Appl. Phys. Lett. 27, 575 (1975); http://dx.doi.org/10.1063/1.88317 (2 pages) | Cited 20 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
We have obtained a planar‐to‐homeotropic structure transition in a smectic‐A liquid crystal under electric field. The mechanisms involved in this transition are described and explained. The most important feature is the nucleation of a new type of defect which gives rise to a network of focal conics, then to a quasihomeotropic structure.
Show PACS
61.30.-v Liquid crystals
64.70.-p Specific phase transitions
61.72.Cc Kinetics of defect formation and annealing

Acoustic storage and processing device using p‐n diodes

C. Maerfeld, Ph. Defranoud, and P. Tournois

Appl. Phys. Lett. 27, 577 (1975); http://dx.doi.org/10.1063/1.88318 (2 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Storage experiments and signal‐processing techniques with surface acoustic Rayleigh waves in a p‐n diode array close to a YZ LiNbO3 substrate are described. A storage time of 15 sec for a writing time constant of 1 μsec has been measured.
Show PACS
72.50.+b Acoustoelectric effects
43.60.+d Acoustic signal processing
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Efficient continuum sources for x‐ray lithography

James S. Greeneich

Appl. Phys. Lett. 27, 579 (1975); http://dx.doi.org/10.1063/1.88319 (3 pages)

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Efficient x‐ray sources whose dominant output is from the x‐ray continuum are examined experimentally for use in x‐ray lithography. At 10 kV with a 6‐μm Mylar mask and 50‐μm Be window, a Au continuum source is more than 3 times as efficient as the Al Kα source. Submicrometer resolution can be obtained with x‐ray continuum sources.
Show PACS
85.40.Bh Computer-aided design of microcircuits; layout and modeling
07.85.-m X- and γ-ray instruments

Reduction of classical thermal conductivity under the influence of high‐power lasers

Jay S. Pearlman and John P. Anthes

Appl. Phys. Lett. 27, 581 (1975); http://dx.doi.org/10.1063/1.88320 (3 pages) | Cited 33 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Observation of the front and rear plasma expansions from a laser‐irradiated thin film has been used to study the thermal conduction of polystyrene targets. The existence of reduced conductivity has been inferred above a threshold of 1014 W/cm2. The percentage of laser radiation transmitted through the thin film decreased by an order of magnitude as the laser flux increased from 1013 to 1014 W/cm2.
Show PACS
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Electrical triggering of an optical breakdown plasma with subnanosecond jitter

H. S. Kwok and Eli Yablonovitch

Appl. Phys. Lett. 27, 583 (1975); http://dx.doi.org/10.1063/1.88321 (3 pages) | Cited 23 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
We have shown that CO2‐laser‐induced breakdown in ultraclean gas follows less than 1 nsec after the injection of free electrons into the focal volume. While this confirms our understanding of the plasma nucleation mechanisms, it is also the first example of a new class of electro‐optic switch in which a small electrical signal is able to control the transmission of a powerful laser beam.
Show PACS
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
51.70.+f Optical and dielectric properties
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Specific heat of cesium dideuterium arsenate (CsD2AsO4) from 0 to 120°C

Yung S. Liu and A. R. Shultz

Appl. Phys. Lett. 27, 585 (1975); http://dx.doi.org/10.1063/1.88322 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The specific heat of cesium dideuterium arsenate (CsD2AsO4) was measured with a scanning differential calorimetric method in the temperature range from 0 to 120 °C. Using a least‐squares curve fit, the power‐series expression of the specific heat in this temperature range is found to be Cp(cal g−1 deg−1) =0.1111+1.80×10−4 T (°C)−5.9×10−9T2(°C). The specific heats at 25 and 100 °C are 0.1156±0.0005 and 0.1290±0.0005 cal g−1 deg−1, respectively. The crystal can be 90° phase matched for the nonlinear second‐harmonic generation of 1.06‐μm lasers in this temperature range.
Show PACS
65.40.Ba Heat capacity
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
64.70.K- Solid-solid transitions

Thin‐film beam splitter and reflector for optical guided waves

Won‐Tien Tsang and Shyh Wang

Appl. Phys. Lett. 27, 588 (1975); http://dx.doi.org/10.1063/1.88323 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
We report the fabrication and operation of a new and simple beam splitter and reflector for thin‐film optical guided waves.
Show PACS
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Amplification of multiline/multiband CO2 laser pulses

J. F. Figueira, J. S. Ladish, G. T. Schappert, and S. J. Thomas

Appl. Phys. Lett. 27, 591 (1975); http://dx.doi.org/10.1063/1.88324 (2 pages) | Cited 9 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Amplification measurements of single‐line and multiline/multiband nanosecond CO2 laser pulses are reported. It is shown that at amplifier pressures of 600 Torr the saturation energy for multiline pulses is twice as large as for single‐line pulses.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Ez Rotational and vibrational energy transfer

Effects of gravitationally induced melt removal on cw laser melt‐through of opaque solids

James E. Robin and Paul Nordin

Appl. Phys. Lett. 27, 593 (1975); http://dx.doi.org/10.1063/1.88325 (3 pages)

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
A simple model is presented that describes the enhancement of cw laser melt‐through of opaque solids due to gravitationally induced melt removal. It is shown that a stationary target whose front surface is oriented at an angle from the horizontal may experience significant reduction in melt‐through time due to laminar flow of molten material. As a direct consequence of the high viscosity of the melt, the rate of melt removal is related to the cube of the melt thickness. This model shows that gravitational enhancement effects can be quite significant for thick targets.
Show PACS
79.20.Ds Laser-beam impact phenomena
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

cw laser oscillation in Cu II

J. R. McNeil, G. J. Collins, K. B. Persson, and D. L. Franzen

Appl. Phys. Lett. 27, 595 (1975); http://dx.doi.org/10.1063/1.88300 (4 pages) | Cited 37 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
We have obtained cw laser oscillation on 23 transitions of Cu II in the blue‐green and near infrared by exciting either a He‐Ar, He‐Ne, or a He‐Xe discharge in a copper hollow cathode. The Cu II wavelengths range from 4506 to 7988 Å. Output characteristics of the Cu II laser lines as functions of helium pressure; He:Ar, He:Ne, and He:Xe mixture ratios; and discharge current are presented. Single‐line output power, from the 7808‐Å transition of Cu II, of 150 mW has been obtained.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
52.80.-s Electric discharges

Detection of core‐gas ions from 3He‐filled pellets in laser‐driven fusion studies

R. R. Goforth

Appl. Phys. Lett. 27, 598 (1975); http://dx.doi.org/10.1063/1.88301 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
3He2+ ions from laser‐irradiated 3He‐filled glass microsphere targets were mass spectroscopically observed only at low velocities consistent with the predictions of hydrodynamic calculations. The null measurements at high velocity indicate that the core gas is largely contained.
Show PACS
28.52.-s Fusion reactors
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Tunable cw difference‐frequency generation in tellurium at ∼11 μm

T. J. Bridges, V. T. Nguyen, E. G. Burkhardt, and C. K. N. Patel

Appl. Phys. Lett. 27, 600 (1975); http://dx.doi.org/10.1063/1.88302 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The narrow spectral width and the nearly continuous tunability of the cw spin flip Raman (SFR) laser operating near 5.3 μm can be transferred to other wavelengths from 5 to 30 μm by difference‐frequency mixing in tellurium. In a demonstration experiment, the SFR laser output is mixed with a fixed‐frequency CO2 laser line to give cw tunable power output near 11 μm. An example of high‐resolution spectroscopy possible with this new source is shown by the spectrum of NH3 which indicates a linewidth of ⩽0.01 cm−1.
Show PACS
07.60.Rd Visible and ultraviolet spectrometers
42.72.-g Optical sources and standards
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)

Controlled passive Q switch for the N2‐laser‐pumped dye laser

L. W. Braverman

Appl. Phys. Lett. 27, 602 (1975); http://dx.doi.org/10.1063/1.88303 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
A method for obtaining a single Q‐switched laser pulse from dye lasers is presented. The method employs a passive Q switch triggered after time delay by a control beam. The delay time is adjusted until single high‐power pulses are produced. Peak power in the dye laser is shown to increase by a factor of 6 due to the Q switch. The results are compared to solid‐state laser theory.
Show PACS
42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical waveguide characteristics of reactive dc‐sputtered niobium pentoxide films

R. L. Aagard

Appl. Phys. Lett. 27, 605 (1975); http://dx.doi.org/10.1063/1.88304 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Reactively dc‐sputtered films of Nb2O5 have very good optical characteristics when prepared under the proper conditions. Substrate preparation, sputtering pressure, gas composition, and deposition power have beem determined which yield films having refractive index from 2.1 to 2.27 and waveguide loss less than 2 dB/cm at 6328 Å.
Show PACS
42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology

Excited state absorption and laser emission from infrared laser dyes optically pumped at 532 nm

C. David Decker

Appl. Phys. Lett. 27, 607 (1975); http://dx.doi.org/10.1063/1.88305 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Efficient near‐infrared dye laser emission has been achieved in the 838–923‐nm range by use of a frequency‐doubled Nd:YAG laser as the optical pump for various polymethine dyes. Experimental evidence of 1064‐nm quenching of the dye laser emission is reported. Strong excited state absorption (ESA) effects are observed for the dye IR‐140 at the 532‐nm pump wavelength. This excited state absorption results in an experimentally determined optimum pump power density of 50–60 MW/cm2 for maximum dye laser efficiency. Such excited state absorption may thus be a limiting factor in the power scaling of pulsed dye lasers.
Show PACS
42.55.Mv Dye lasers
31.50.Df Potential energy surfaces for excited electronic states
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
32.80.Xx Level crossing and optical pumping

A second look at the excitation mechanism of the He‐Hg+ laser

H. Kano, T. Shay, and G. J. Collins

Appl. Phys. Lett. 27, 610 (1975); http://dx.doi.org/10.1063/1.88306 (3 pages) | Cited 19 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
We have resolved the controversy in the literature concerning the dominant excitation mechanism of the cw mercury ion laser by obtaining the first direct experimental proof that thermal energy charge transfer is the dominant formation process for the excited 7p2P terms of Hg II which support cw laser oscillation of 6150 and 7944 Å. Using a floating double probe we have monitored directly the helium ion density versus time and confirmed its one‐to‐one correspondence with the measured decay of spontaneous emission from the Hg II 7p2P levels. The measured value of the cross section, σ (He+‐Hg), is 1.3×10−14 cm2, amongst the largest ever observed in atomic physics, and confirms earlier work by Dyson.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions

Retardation of Impatt diode aging by use of tungsten in the electrodes

G. E. Mahoney

Appl. Phys. Lett. 27, 613 (1975); http://dx.doi.org/10.1063/1.88307 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Stable rf performance of Pt‐GaAs Schottky barrier Impatt diodes may be affected by the platinum reacting with the GaAs, thereby producing junction movement during aging. This paper presents data which monitor the junction movement and then demonstrates the effect of using a tungsten layer to limit the Pt‐GaAs reaction. The tungsten layer does not alter the rf performance. The platinum ’’chew in ’’ is controlled and the tendency of the reverse I‐V characteristics to soften with age is slowed.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions

Oxide thickness dependence of electron‐induced surface states in MOS structures

T. P. Ma

Appl. Phys. Lett. 27, 615 (1975); http://dx.doi.org/10.1063/1.88308 (3 pages) | Cited 35 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
To gain insight into the origin of the surface state induced by electron radiation, MOS structures with different oxide thicknesses were irradiated with a 25‐keV electron beam. For a dose of 0.95×10−5 C/cm2, the surface states increased montonically as the oxide thickness increased from 90 to 2100 Å. Since all the oxides were grown under the same oxidation conditions and their initial surface states were of the same density, the results could not be due to the difference in their interface properties. The experimental results can be explained by a postulation based on a broken‐bond model.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
79.20.Kz Other electron-impact emission phenomena

Photoemission study of the formation of Schottky barriers

W. E. Spicer, P. E. Gregory, P. W. Chye, I. A. Babalola, and T. Sukegawa

Appl. Phys. Lett. 27, 617 (1975); http://dx.doi.org/10.1063/1.88309 (4 pages) | Cited 21 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
For the first time, changes in electronic structure have been studied during Schottky barrier (Cs on GaAs or InP) formation. Strong changes occur near the valence band maximum; however, these do not overcome a dominant role of intrinsic surface states in Fermi‐level pinning.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Ns Metal-nonmetal contacts
79.60.Jv Interfaces; heterostructures; nanostructures

Enhanced breakdown voltage in planar metal‐overlap laterally diffused (MOLD) Schottky diodes

A. Rusu and C. Bulucea

Appl. Phys. Lett. 27, 620 (1975); http://dx.doi.org/10.1063/1.88310 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
A novel uniform‐avalanche structure is presented consisting of a planar metal‐overlap laterally diffused (MOLD) Schottky diode. This structure has been proved to be free of edge breakdown by numerical two‐dimensional field calculations. Experimentally obtained aluminum‐silicon MOLD Schottky diodes have shown enhanced breakdown voltage in comparison with simultaneously processed standard planar Schottky diodes.
Show PACS
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
72.20.Ht High-field and nonlinear effects

New type of homointegrated and heterointegrated circuits

F. C. Jain

Appl. Phys. Lett. 27, 622 (1975); http://dx.doi.org/10.1063/1.88311 (4 pages) | Cited 1 time

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The use of GeO2 as a stable mask for the selective growth of epitaxial Ge layers through unmasked windows on Ge substrates or on previously deposited Ge layers in GaAs substrates is here described. In both cases, the Ge epitaxial layers have been grown at a relatively low temperature, 330–420 °C, using the GeI2 disproportionation reaction. The surfaces of the oxide and the Ge layers grown in regions surrounded by GeO2 appear to be mirror smooth when observed with a scanning electron microscope up to 11 500× magnification. The oxide‐germanium boundary has been found to be free from preferential growth of Ge. New applications of this technique to Ge homointegrated circuits (e.g., Ge layers grown on Ge‐or Cr‐doped semiinsulating GaAs substrates) and Ge/GaAs heterointegrated circuits are discussed. Also described is the possibility to integrate other materials and new heterojunction devices compatible with Ge and several other devices which are not feasible in Si alone.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Electronic nature of amorphous threshold switching

Kurt E. Petersen and David Adler

Appl. Phys. Lett. 27, 625 (1975); http://dx.doi.org/10.1063/1.88312 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Four distinct sets of experiments have been carried out to determine the size of the conducting filament in the on state of an amorphous threshold switch as a function of steady‐state current. It is found that the filament is much wider (e.g., 20 μm in diameter at 50‐mA current) than is compatible with the current densities necessary for thermally induced switching. An upper limit of 60 °C can be established for the maximum temperature rise in the material for on‐state currents between 10 and 200 mA. This establishes the electronic nature of the on state.
Show PACS
72.60.+g Mixed conductivity and conductivity transitions
72.80.Ng Disordered solids
72.20.Ht High-field and nonlinear effects
84.32.Dd Connectors, relays, and switches

LPE growth of GaAs by supercooling technique: Elimination of surface terraces

Nobuyuki Toyoda, Minoru Mihara, and Tohru Hara

Appl. Phys. Lett. 27, 627 (1975); http://dx.doi.org/10.1063/1.88313 (2 pages) | Cited 6 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The surface morphology of thin GaAs LPE layers grown on substrates misoriented from the (100) or (111) B plane is studied. The experiments demonstrate that surface terraces can be eliminated by using initially supercooled solutions. Very smooth surfaces are obtained for growth even on substrates miroriented 0–10° off the (100) plane.
Show PACS
68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Electronic tunneling currents at optical frequencies

S. M. Faris, B. Fan, and T. K. Gustafson

Appl. Phys. Lett. 27, 629 (1975); http://dx.doi.org/10.1063/1.88314 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
Rectification characteristics of nonsuperconducting metal‐barrier‐metal junctions as deduced from electronic tunneling theory have been observed experimentally for optical frequency irradiation of the junction.
Show PACS
73.40.Rw Metal-insulator-metal structures
73.40.Ei Rectification
72.40.+w Photoconduction and photovoltaic effects
73.40.Gk Tunneling

Improved composite‐processed V3Ga through partial substitution of aluminum for gallium in the matrix

Y. Yoshida, K. Tachikawa, and Y. Iwasa

Appl. Phys. Lett. 27, 632 (1975); http://dx.doi.org/10.1063/1.88315 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

Full Text: | Download PDF

Show Abstract
The effects of the partial substitution of aluminum for gallium in the matrix on the superconducting properties of composite‐processed V3Ga have been investigated. At an aluminum concentration of 2–3% there is considerable increase in Jc and a slight increase in Hc2.
Show PACS
74.70.-b Superconducting materials other than cuprates
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close