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15 Jul 1975

Volume 27, Issue 2, pp. 53-100


Photoconductive probing of acoustoelectric domains with application to optical image scanning

G. K. Celler and Ralph Bray

Appl. Phys. Lett. 27, 53 (1975); http://dx.doi.org/10.1063/1.88363 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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A simple new method is described for probing acoustoelectric domains in n‐GaAs through their strong photoconductive response to a focused light beam. This permits a scan of the spatial distribution and propagation of the amplified acoustic flux in the sample. As a further application of the photoconductive response, a narrow propagating domain can be used to reveal an optical image projected onto the sample. The techniques are illustrated here primarily for extrinsic photoexcitation with Nd:YAG laser light.
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72.50.+b Acoustoelectric effects
72.40.+w Photoconduction and photovoltaic effects
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.30.Va Image forming and processing

Temporal evolution of the electron density in high‐pressure electron‐beam‐excited xenon plasmas

E. Zamir, C. W. Werner, W. P. Lapatovich, and E. V. George

Appl. Phys. Lett. 27, 56 (1975); http://dx.doi.org/10.1063/1.88364 (3 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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Measurements of the free‐free absorption coefficient in high‐pressure (50–400 psia) e‐beam‐excited rare‐gas plasmas have been used to deduce the temporal evolution of electron density in these systems. The measurements were carried out using a focused CO2 laser beam passing through the excited region of the plasma. Comparison of theory and experiment in the early afterglow, where Penning ionization of excimers dominates the electron production, yields a room‐temperature rate coefficient of 8×10−11 cm3/sec for this process in xenon.
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52.40.Mj Particle beam interactions in plasmas
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Relativistic space‐charge flow in a magnetic field

Kenneth D. Bergeron and J. W. Poukey

Appl. Phys. Lett. 27, 58 (1975); http://dx.doi.org/10.1063/1.88365 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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An analytic model for space‐charge‐limited flow in relativistic diodes is presented which includes the effect of a transverse magnetic field below the critical field for magnetic insulation. Conditions for the validity of the model are investigated and comparison is made with recent experiments by Golden et al.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
41.75.Fr Electron and positron beams
52.27.Ny Relativistic plasmas

Comparison of interface‐state generation by 25‐keV electron beam irradiation in p‐type and n‐type MOS capacitors

T. P. Ma, G. Scoggan, and R. Leone

Appl. Phys. Lett. 27, 61 (1975); http://dx.doi.org/10.1063/1.88366 (3 pages) | Cited 52 times

Online Publication Date: 2 September 2008

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The interface state induced by 25‐keV electron beam irradiation in MOS capacitors having p‐ and n‐type substrates with several different doping concentrations have been studied. For radiation dosage on or above the order of 1×10−5 C/cm2, all of the radiation‐induced interface‐state distributions tend to have a similar shape which is asymmetrical about the midgap, independent of the type and concentration of the silicon dopants, and independent of the initial interface‐state distributions. The states in the upper half of the silicon band gap are acceptor type which peak around 0.2 eV from the midgap, whereas the states in the lower half of the band gap are donor type with a lower density. For radiation dosage below 1×10−7 C/cm2 the postradiation interface states are proportional to their initial values. An explanation based on the broken bond model is presented to account for the observations.
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61.80.Fe Electron and positron radiation effects
85.30.-z Semiconductor devices
73.20.-r Electron states at surfaces and interfaces
84.32.Tt Capacitors

On the controversy about the direction of electrotransport in thin gold films

R. E. Hummel and R. T. DeHoff

Appl. Phys. Lett. 27, 64 (1975); http://dx.doi.org/10.1063/1.88367 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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Annealed ’’pure’’ gold films exhibit electromigration against the electron flow. In contrast, gold films deposited on a transition metal underlayer show mass flow in the same direction as the electron flow. Diffusion of the transition metal from the underlayer into the gold film, deduced from Auger analyses presented herein, is believed to be responsible for this reversal. A new experiment, utilizing an ’’inverted temperature profile’’ gives unambiguous results on the direction of electrotransport.
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
82.45.-h Electrochemistry and electrophoresis

CeP5O14, a new ultrafast scintillator

D. Bimberg, D. J. Robbins, D. R. Wight, and J. P. Jeser

Appl. Phys. Lett. 27, 67 (1975); http://dx.doi.org/10.1063/1.88368 (2 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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CeP5O14 exhibits one emission band in the wavelength range 200–750 μm under cathode ray excitation. This band peaks at 335 nm and decays initially with τ1=12 nsec. A somewhat slower decay with τ2=36 nsec follows. These properties make the material suitable for fast scintillator applications, especially as a beam‐indexing phosphor in color cathode ray tubes.
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29.40.Mc Scintillation detectors
78.60.Hk Cathodoluminescence, ionoluminescence
85.60.Jb Light-emitting devices

Some second‐phase structures in gallium arsenide annealed after implantation with zinc

R. B. Benson, M. A. Littlejohn, P. S. Pao, and H. K. Sarin

Appl. Phys. Lett. 27, 69 (1975); http://dx.doi.org/10.1063/1.88369 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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After GaAs was implanted with 1015/cm2 60‐keV Zn ions at ambient temperature, annealing with a rf‐sputtered SiO2 passivating layer resulted in the formation of the second‐phase structures ZnGa2O4 at 800 °C and primarily Zn3As2 at 600 °C. Possible relationships between the second‐phase structures and the electrical properties of the ion‐implanted annealed regions are discussed.
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61.72.U- Doping and impurity implantation
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Second harmonic generation in a GaP waveguide

J. P. van der Ziel, R. M. Mikulyak, and A. Y. Cho

Appl. Phys. Lett. 27, 71 (1975); http://dx.doi.org/10.1063/1.88370 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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Waveguiding of 1.0642‐μm radiation and nonphase‐matched second harmonic generation have been observed in a 200‐Å‐thick GaP waveguide grown by molecular beam epitaxy on a (111) ‐oriented CaF2 substrate.
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42.79.Gn Optical waveguides and couplers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

p‐n junction zinc sulfo‐selenide and zinc selenide light‐emitting diodes

Robert J. Robinson and Zoltan K. Kun

Appl. Phys. Lett. 27, 74 (1975); http://dx.doi.org/10.1063/1.88358 (3 pages) | Cited 32 times

Online Publication Date: 2 September 2008

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The wide‐band‐gap group II–group VI compound semiconductors have long been valued for their luminous efficiency, and an obvious application would be p‐n junction LED’s. However, these materials could only be made n type, not p type. Using an uncustomary technique, we have succeeded in making stable low‐resistivity p‐type ZnSxSe1−x and ZnSe by diffusion into n‐type substrates, and thereby have made low‐resistance LED’s. The diffusion process is carried out in two steps: a deposition step followed by a drive‐in. Gallium, indium, and thallium are used to make the material p type. (i) The group IIIA element is present in doping quantities only. (ii) p‐type mobility values are presented as a function of hole concentration; temperature dependence establishes that the level is shallow. (iii) The LED’s have low resistance and the light output is linear with current above the barrier voltage. (iv) Generation current from the junction, n=2, is observed below the barrier voltage. External quantum efficiencies around 1% are estimated with optimized diodes.
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85.60.Jb Light-emitting devices
61.72.U- Doping and impurity implantation

Infrared‐pumped third‐harmonic and sum‐frequency generation in diatomic molecules

C. Y. She and Kenneth W. Billman

Appl. Phys. Lett. 27, 76 (1975); http://dx.doi.org/10.1063/1.88359 (4 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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See Also: Erratum

Show Abstract
Using molecular hydrogen as a model system, we present the first calculation which demonstrates the feasibility of efficient third‐harmonic and sum‐frequency generation of ir laser radiation by diatomic molecular gases. A conversion efficiency of 10% without phase matching is achievable with a modest laser intensity of about 20 MW/cm2. In addition to a two‐photon resonance, the efficient conversion depends on a mechanism which makes use of virtual vibronic transitions exclusively. Possible methods for phase matching are also suggested.
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32.80.Xx Level crossing and optical pumping
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Microfabrication of two‐dimensional periodic arrays by laser beam interferometric technique

Won‐Tien Tsang and Shyh Wang

Appl. Phys. Lett. 27, 79 (1975); http://dx.doi.org/10.1063/1.88360 (4 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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We have fabricated two‐dimensional periodic arrays of circular openings with submicrometer diameter and spacing in thin photoresist films coated on top of glass substrates using a laser beam interferometric technique coupled with the simultaneous exposure and development (SED) method. The two‐dimensional grating masks generated in this way are comparable in quality to those generated by computer‐controlled scanning electron beam (CCSEB). Important advantages of the method described are that it is simple in both skill and instrumentation involved and that it is economic, fast, free of electron scattering and electrical charging problems, flexible, and able to generate large areas of uniform arrays. However, with this technique only periodic lattice structures can be generated. Possible new applications utilizing these structures are discussed.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
42.62.-b Laser applications

Fast infrared optical shutter

A. V. Nurmikko and G. W. Pratt

Appl. Phys. Lett. 27, 83 (1975); http://dx.doi.org/10.1063/1.88361 (2 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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Rapid modulation of infrared radiation in the 10‐μ wavelength region has been achieved by operating a thin‐film Pb1−xSnxTe optical shutter. The switching mechanism considered here takes advantage of the rapid absorption edge shift induced by an intense incident optical pump. Experimental evidence suggests the possibility of producing picosecond infrared transients.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Subnanosecond relaxation time measurements using a transient induced grating method

Donald W. Phillion, Dirk J. Kuizenga, and A. E. Siegman

Appl. Phys. Lett. 27, 85 (1975); http://dx.doi.org/10.1063/1.88362 (3 pages) | Cited 77 times

Online Publication Date: 2 September 2008

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The orientational relaxation times and S1 singlet lifetimes for Rhodamine 6G molecules in various alcohols have been measured using mode‐locked laser pulses in a transient induced grating technique. The transient grating technique can be applied to measure a variety of atomic and molecular excited state phenomena on subnanosecond to picosecond time scales.
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33.15.Mt Rotation, vibration, and vibration-rotation constants
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
42.62.-b Laser applications
31.50.Df Potential energy surfaces for excited electronic states

Isotopic enrichment of SF6 in S34 by multiple absorption of CO2 laser radiation

John L. Lyman, Reed J. Jensen, John Rink, C. Paul Robinson, and Stephen D. Rockwood

Appl. Phys. Lett. 27, 87 (1975); http://dx.doi.org/10.1063/1.88371 (3 pages) | Cited 105 times

Online Publication Date: 2 September 2008

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An increase in the ratio of S34/S32 of 3300% over its natural ratio has been obtained by irradiating SF6 in the presence of H2 with an intensely focused CO2 laser. The quantities of material separated are on the order of 100 μg.
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82.50.Hp Processes caused by visible and UV light
32.10.Bi Atomic masses, mass spectra, abundances, and isotopes
42.62.-b Laser applications
82.40.Bj Oscillations, chaos, and bifurcations

Efficient CuInSe2/CdS solar cells

J. L. Shay, Sigurd Wagner, and H. M. Kasper

Appl. Phys. Lett. 27, 89 (1975); http://dx.doi.org/10.1063/1.88372 (2 pages) | Cited 102 times

Online Publication Date: 2 September 2008

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We report the preparation of a CuInSe2/CdS heterojunction solar cell having a solar power conversion efficiency of 12% measured on a clear day in New Jersey (∼92‐mW/cm2 solar intensity).
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Granular metal‐semiconductor vidicon

C. R. Wronski, B. Abeles, and A. Rose

Appl. Phys. Lett. 27, 91 (1975); http://dx.doi.org/10.1063/1.88373 (2 pages)

Online Publication Date: 2 September 2008

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A novel low‐dark‐current high‐sensitivity vidicon target has been made using a semiconductor ‘n‐type CdSe’ coated with a granular metal ‘Au‐SiO2’ film. The granular metal‐semiconductor interface forms a Schottky barrier which blocks effectively the beam electrons. The high lateral resistance of the granular metal film precludes the need of an array structure to achieve good resolution.
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84.47.+w Vacuum tubes
29.25.-t Particle sources and targets
29.27.-a Beams in particle accelerators
73.30.+y Surface double layers, Schottky barriers, and work functions

Magnetically tunable laser emission from [Hg,Cd]Te

B. A. Weber, J. P. Sattler, and J. Nemarich

Appl. Phys. Lett. 27, 93 (1975); http://dx.doi.org/10.1063/1.88374 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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Tunable spin‐flip Raman and recombination laser emission from [Hg,Cd]Te have been observed using a chopped‐cw CO2 laser as the pump. Peak powers of over 1 mW and average powers of over 100 μW have been obtained for both the spin‐flip Raman and recombination emissions with conversion efficiencies of over 0.3%. A zero‐field g factor of ‖82‖±3 has been measured, corresponding to a conduction band‐edge effective‐mass ratio of 0.0098±0.0004.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.45.+h Stimulated emission

A 15% efficient antireflection‐coated metal‐oxide‐semiconductor solar cell

R. J. Stirn and Y. C. M. Yeh

Appl. Phys. Lett. 27, 95 (1975); http://dx.doi.org/10.1063/1.88375 (4 pages) | Cited 64 times

Online Publication Date: 2 September 2008

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A new effect is being developed which significantly improves the conversion efficiency of antireflection‐coated metal‐oxide‐semiconductor ‘AMOS’ solar cells. The effect, a marked increase in the open‐circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n‐type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low‐cost polycrystalline films of GaAs in place of the single crystals now used.
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Evaporative degradation of HgI2 x‐ray detectors

Ronald S. Scott and George E. Fredericks

Appl. Phys. Lett. 27, 99 (1975); http://dx.doi.org/10.1063/1.88376 (2 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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The instability of unprotected HgI2 x‐ray detectors in vacuum, contrasted with their apparent stability in air is examined. The degradation is treated as a result of noncongruent sublimation of Hg and I2 from the detector surface, resulting in a buildup of free Hg atoms. The calculations indicate that the observed degradation of these devices in vacuum is to be expected, and that similar degradation in air will occur at rates 103–104 times more slowly.
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29.40.Wk Solid-state detectors
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
07.85.-m X- and γ-ray instruments
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