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15 Aug 1975

Volume 27, Issue 4, pp. 163-259

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Pressure measurements very near an electrical arc discharge in a liquid using a lithium niobate piezoelectric transducer

C. F. Huff and R. A. Graham

Appl. Phys. Lett. 27, 163 (1975); http://dx.doi.org/10.1063/1.88416 (2 pages)

Online Publication Date: 2 September 2008

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The pressure pulse generated by an electric arc discharge in aqueous liquids was measured with a lithium niobate piezoelectric transducer. These measurements are the first time‐resolved pressure pulses recorded in proximity to an arc channel.
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52.80.Wq Discharge in liquids and solids
47.40.Nm Shock wave interactions and shock effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
07.07.Mp Transducers

Anomalous temperature effect of oxidation stacking faults in silicon

S. M. Hu

Appl. Phys. Lett. 27, 165 (1975); http://dx.doi.org/10.1063/1.88441 (3 pages) | Cited 73 times

Online Publication Date: 2 September 2008

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We observed an anomalous temperature effect in the growth of oxidation stacking faults in silicon. For a given oxidation time, the size of stacking faults first increases with temperature following an Arrhenius relation, reaches a peak at some temperature, and then decreases with temperature rather sharply until, finally, the faults totally vanish. The temperature above which the oxidation stacking faults vanish is dependent on the crystal surface orientation as well as on the oxidation ambients. In dry oxygen, this temperature is ∼1240 °C for {100} surfaces, ∼1220 °C for {111} surfaces, and ∼1175 °C for {1,0,11} surfaces (5° off {100}). Thus, the size‐versus‐temperature curve of the growth of oxidation stacking faults can be divided into two regions, which may be called the growth and the retrogrowth regions. In the growth region the growth follows a power law of (size) ∝ (time)0.8; in the retrogrowth region, the power law breaks down. The activation energy in the growth region is 2.3 eV for all surface orientations and oxidation ambients. A more complete picture of the growth of stacking faults emerges, in which the reported ’’immunity to stacking faults’’ of certain vicinal {100} surfaces is merely a point far out in the retrogrowth region.
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61.72.Nn Stacking faults and other planar or extended defects
81.65.Kn Corrosion protection

One‐tenth‐second storage of surface acoustic signal in CdS

G. Bastide, G. Cambon, and G. Sagnes

Appl. Phys. Lett. 27, 168 (1975); http://dx.doi.org/10.1063/1.88442 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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We report an experiment on acoustic surface wave storage in photoconducting CdS which leads to a decay time as long as 100 ms. Both charging and storing times are deduced from the experimental amplitude of the echo restored by a readout pulse. In addition we find that charging and discharging of the memory seem to obey a two‐step process.
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72.50.+b Acoustoelectric effects
43.58.+z Acoustical measurements and instrumentation
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Coherent integration and correlation in a modified acoustoelectric memory correlator

K. A. Ingebrigtsen and E. Stern

Appl. Phys. Lett. 27, 170 (1975); http://dx.doi.org/10.1063/1.88443 (3 pages) | Cited 4 times

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The storage, correlation, and coherent integration of analog signals in a Schottky diode acoustoelectric memory correlator is described. The experiments demonstrate storage of phase and amplitude of a 70‐MHz signal by the distribution of charge in an array of Schottky diodes. Coherent integration is obtained by accumulating a succession of charges in highly resistive polycrystalline silicon islands. Coherent integration over a time period of several tens of milliseconds is reported.
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72.50.+b Acoustoelectric effects
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices

Electron microscopic observations of coherent boundaries in γ‐ (Cu‐Al)

Gabriel Torres V. and S. V. Radcliffe

Appl. Phys. Lett. 27, 172 (1975); http://dx.doi.org/10.1063/1.88444 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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Electron microscopic evidence is obtained for the presence of a possible two‐phase structure inside the γ‐phase field of the Cu‐Al system. Alloys with composition 34.54 at.% Al show a banded microstructure. When the bands are observed edge on adjacent plates differ in brightness. They are visible as fringe patterns when lying in planes inclined to the foil plane. Electron diffraction experiments show that the only crystallographic difference between two adjacent plates is the size of the unit cell. The probable composition of the coexisting phases is suggested to be Cu9Al4 and Cu17Al9.
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81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Electron diffraction from areas less than 3 nm in diameter

R. H. Geiss

Appl. Phys. Lett. 27, 174 (1975); http://dx.doi.org/10.1063/1.88417 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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A method of obtaining rocking‐beam microarea electron diffraction patterns is described employing the electron optics of a single‐field condenser‐objective lens in a commercial scanning transmission electron microscope. Theoretical and experimental evidence is presented showing that it is possible to obtain diffraction patterns from areas less than 3 nm in diameter with minimum lattice spacings of 0.14 nm. This is demonstrated with a specimen consisting of small gold particles evaporated on a carbon substrate.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
61.05.J- Electron diffraction and scattering

Ultrasonic phase‐contrast imaging

R. Mezrich and D. H. R. Vilkomerson

Appl. Phys. Lett. 27, 177 (1975); http://dx.doi.org/10.1063/1.88418 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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The phase‐contrast method of visualizing transparent objects is applied to ultrasonic imaging. In this method a thin polyethylene phase plate is placed at the back focal plane of an acoustic object lens which causes velocity variations in the object to be converted to proportional amplitude variations at the image plane. Examples of the application of this method to image acoustically transparent (i.e., nonabsorbing) structures, using a recently developed system to visualize ultrasonic waves, are presented.
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43.58.+z Acoustical measurements and instrumentation
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
43.60.+d Acoustic signal processing

Zinc oxide–silicon monolithic acoustic surface wave optical image scanner

J. K. Elliott, R. L. Gunshor, R. F. Pierret, and K. L. Davis

Appl. Phys. Lett. 27, 179 (1975); http://dx.doi.org/10.1063/1.88419 (4 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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An optical image is converted into an electrical signal by utilizing acoustic surface wave convolution in a monolithic structure composed of a piezoelectric zinc oxide film on a silicon substrate. Measurements are presented describing the variation of convolution efficiency with light intensity, input acoustic power, and convolver gate electrode dc bias. An initialization procedure is described that allows the device to operate either in an image memory mode or in a nonstorage mode which permits scanning of nonstationary images.
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85.60.-q Optoelectronic devices
72.50.+b Acoustoelectric effects
42.30.-d Imaging and optical processing

Semiconductor‐electrolyte photovoltaic cell energy conversion efficiency

Y. G. Chai and W. W. Anderson

Appl. Phys. Lett. 27, 183 (1975); http://dx.doi.org/10.1063/1.88420 (2 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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Photocurrent and differential capacitance were measured as a function of terminal potential with CdS‐ and GaAs‐electrolyte photovoltaic cells to determine the open‐circuit voltage Voc and the power conversion efficiency ηp. Voc was found to be 1.2 V for both cells. With monochromatic excitation, ηp=32% for the CdS cell, and ηp=21% for the GaAs cell. For both cells the quantum efficiency was larger than unity at short wavelengths indicating that current doubling is occurring at the interface. For the GaAs cell, current flow is mostly due to the diffusion of minority carriers from the bulk to the space‐charge layer under illumination.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.-c Electronic transport in interface structures
82.47.-a Applied electrochemistry

Energy deposition into dense collisionless plasmas by rotating beams

K. R. Chu, C. A. Kapetanakos, and R. W. Clark

Appl. Phys. Lett. 27, 185 (1975); http://dx.doi.org/10.1063/1.88421 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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A nonturbulent mechanism is proposed whereby a rotating electron or ion beam pulse rapidly deposits energy on the ions of a dense, magnetized, weakly collisional plasma through excitation of the compressional Alfvén mode.
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52.40.Mj Particle beam interactions in plasmas
52.50.Gj Plasma heating by particle beams

Conductivity of ionized flowing gases

J. J. Lee

Appl. Phys. Lett. 27, 187 (1975); http://dx.doi.org/10.1063/1.88422 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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In a previous paper, the electron distribution function for a weakly ionized flowing gas in an electric field has been derived. The distribution function is used to calculate the conductivity of the flow. First, the gas molecules are considered as hard spheres. The resulting formula is identical in form to that obtained by Margenau, except that a correction term due to the flow speed is included in the temperature. Next, the gas is treated as Maxwell molecules. In this case, when the field is perpendicular to the flow, the expression reduces to the familiar form ne2/m (ν+iω), independent of the temperature and the flow speed.
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51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.80.Dy Low-field and Townsend discharges
52.30.-q Plasma dynamics and flow

Current‐pressure transitions in a magnetically supported dc sputtering system

F. A. Green and B. N. Chapman

Appl. Phys. Lett. 27, 189 (1975); http://dx.doi.org/10.1063/1.88423 (2 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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Sputtering in a cylindrical magnetron configuration, current‐pressure characteristics show an unexpected discontinuity and current–magnetic field curves exhibit a maximum. These characteristics seem to be closely related to the ratio of the height from the target of the secondary electron initial trajectory compared to the cathode dark space distance.
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79.20.-m Impact phenomena (including electron spectra and sputtering)
81.15.Cd Deposition by sputtering

Statistics in laser‐induced dielectric breakdown

N. L. Boling, P. Bräunlich, Ansgar Schmid, and Paul Kelly

Appl. Phys. Lett. 27, 191 (1975); http://dx.doi.org/10.1063/1.88424 (4 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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The statistical aspects of laser‐induced breakdown of transparent dielectrics are reexamined and it is found that the experimentally observed independence of the damage probability on spot size is inconsistent with previous theory. In an attempt to find spot‐size‐independent contributions to damage statistics, modification of the electronic properties of the material caused by intense photon fluxes below the one‐shot damage threshold is considered. This modification takes the form of absorbing defects (color centers). The case of high‐quality NaCl (containing 5×1016 Cl− vacancies) is discussed in detail. At the ruby frequency, it may require up to three identical 60‐nsec shots at the same sample site to cause damage at field strengths below the one‐shot threshold. The results exhibit the proper volume dependence and they indicate that laser‐induced material modifications prior to breakdown may indeed contribute to damage statistics.
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79.20.Ds Laser-beam impact phenomena
77.22.Jp Dielectric breakdown and space-charge effects

Electron‐beam‐driven instability in a solid

F. C. Perry and L. P. Mix

Appl. Phys. Lett. 27, 194 (1975); http://dx.doi.org/10.1063/1.88425 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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A relativistic electron beam (REB) accelerator was used to generate a shock wave (6–10 kbar) in a solid aluminum plate, and the tensile wave following the compressive wave produced an instability of the back surface of the plate. The wavelength of the instability, observed by holographic interferometry, and the measured negative acceleration of the solid‐gas interface were used in a modified theory of Taylor instability to determine a value of 1.7×103 P for the viscosity of aluminum which was in reasonable agreement with a previously reported value. It is suggested that the mechanism of Taylor instability can qualitatively explain the obervation in a previous experiment of a distribution of particle velocities at a surface of a solid upon arrival of a very high‐amplitude (∼1 Mbar) shock wave.
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62.50.-p High-pressure effects in solids and liquids
47.40.Nm Shock wave interactions and shock effects
52.75.Di Ion and plasma propulsion

Reduction of surface erosion caused by helium blistering: Microstructural effects

S. K. Das, M. Kaminsky, and T. D. Rossing

Appl. Phys. Lett. 27, 197 (1975); http://dx.doi.org/10.1063/1.88426 (3 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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An attempt has been made to determine if a suitable microstructure (e.g., grain size, dispersion of oxide particles in a metal matrix) of a material can be found to reduce the helium buildup and subsequent blistering in near‐surface regions. A comparison of the surface erosion due to helium blistering in aluminum and sintered aluminum powder (SAP) has been made for irradiation at room temperature with 100‐keV He+ ions to a dose of 1.0 C/cm2. The results show high reduction in erosion rate in SAP by more than 3 orders of magnitude as compared to the erosion rate in pure aluminum.
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61.80.Jh Ion radiation effects
61.80.Lj Atom and molecule irradiation effects
79.20.-m Impact phenomena (including electron spectra and sputtering)
61.72.U- Doping and impurity implantation
28.41.Bm Fuel elements, preparation, reloading, and reprocessing

Implantation profiles of low‐energy helium in niobium and the blistering mechanism

R. Behrisch, J. Bøttiger, W. Eckstein, U. Littmark, J. Roth, and B. M. U. Scherzer

Appl. Phys. Lett. 27, 199 (1975); http://dx.doi.org/10.1063/1.88427 (3 pages) | Cited 62 times

Online Publication Date: 2 September 2008

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The depth profiles of 1.5–15‐keV 3He ions implanted into a Nb single crystal at doses of 5×1016–7×1018/cm2 have been measured using the 3He  (d,p)  4He reaction. A comparison of the results with theoretical predictions for the range and the damage distribution of 3He in amorphous material shows reasonable agreement. Furthermore, the Deckeldicke (i.e., thickness of the covers of the blisters) was determined by Rutherford backscattering in double alignment. The results indicate that stress release rather than explosion of gas bubbles is the dominant mechanism in blister formation.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
28.52.-s Fusion reactors

GaAs electro‐optic directional‐coupler switch

J. C. Campbell, F. A. Blum, D. W. Shaw, and K. L. Lawley

Appl. Phys. Lett. 27, 202 (1975); http://dx.doi.org/10.1063/1.88428 (4 pages) | Cited 58 times

Online Publication Date: 2 September 2008

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We report the fabrication and testing of a GaAs electro‐optic directional‐coupler (EDC) switch in which the fraction of light coupled from one waveguide channel to the other can be controlled by an applied electric field. Ninety‐five percent amplitude switching and a maximum extinction ratio of 13 dB have been observed in an EDC switch, having a minimum 3‐dB bandwidth of ≳100 MHz and a drive power per unit bandwidth of <180 μW/MHz.
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42.79.Hp Optical processors, correlators, and modulators
84.40.Az Waveguides, transmission lines, striplines
85.60.-q Optoelectronic devices

Cerenkov pulse dispersion in two low‐loss fibers

L. A. Franks, M. A. Nelson, and T. J. Davies

Appl. Phys. Lett. 27, 205 (1975); http://dx.doi.org/10.1063/1.88429 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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We have measured the material and mode dispersion of a 50‐psec Cerenkov light pulse generated in 500‐m lengths of low‐loss graded and step‐index Corning fibers. The initial 15.7‐nsec full width at half‐maximum (FWHM) transmitted pulse in the graded fiber was reduced to less than 2 nsec with narrow‐band optical filtering. Parallel measurements in the step‐index fiber gave a value of less than 4 nsec for an initial 16.3‐nsec FWHM pulse. Fluorescence induced in the fiber by the electron radiation was less than 1% of the amplitude of the transmitted Cerenkov light in the graded fiber and approximately 2% in the step fiber.
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42.81.-i Fiber optics
78.20.-e Optical properties of bulk materials and thin films

X‐ray topographic study of dark‐spot defects in GaAs‐Ga1−xAlxAs double‐heterostructure wafers

Seigô Kishino, Hisao Nakashima, Ryoichi Ito, and Osamu Nakada

Appl. Phys. Lett. 27, 207 (1975); http://dx.doi.org/10.1063/1.88430 (3 pages) | Cited 13 times

Online Publication Date: 2 September 2008

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Dark‐spot defects (DSD) in a GaAs‐Ga1−xAlxAs double‐heterostructure (DH) wafer are studied by x‐ray topography. Such DSD’s are one of the primary sources of the dark‐line defects (DLD) that cause rapid degradation of GaAs‐Ga1−xAlxAs DH lasers. By using x‐ray topography almost all DSD’s observed by photoluminescence topography are correlated with dislocations in a GaAs substrate. In addition, it is observed that some dislocations in the substrate are not sources of DSD’s when the dislocation axes are nearly parallel to the surface of the substrate.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
61.72.Lk Linear defects: dislocations, disclinations
61.05.C- X-ray diffraction and scattering

Radiation protection of fiber optic materials: Effect of cerium doping on the radiation‐induced absorption

E. J. Friebele

Appl. Phys. Lett. 27, 210 (1975); http://dx.doi.org/10.1063/1.88431 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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High‐numerical‐aperature lead silicate and barium crown glass uncald fibers have been doped with cerium to decrease their radiation sensitivity. The radiation‐induced optical loss in both the visible and near‐infrared in these core materials has been studied as a function of time (10−3–104 sec) after pulsed irradiation and cerium concentration (0–1 wt%). It has been determined that cerium is effective in decreasing the loss at a given time and increasing the decay rate of absorption.
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42.81.-i Fiber optics
61.80.-x Physical radiation effects, radiation damage
78.30.-j Infrared and Raman spectra
78.40.-q Absorption and reflection spectra: visible and ultraviolet

New oscillation phenomena in VO2 crystals

Yoshiaki Taketa, Fumio Kato, Masayoshi Nitta, and Miyoshi Haradome

Appl. Phys. Lett. 27, 212 (1975); http://dx.doi.org/10.1063/1.88432 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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New oscillation phenomena in VO2 crystals were observed. The oscillation is generated in the temperature region of the crystal transition, and its voltage and frequency depend upon the ambient temperature. The waveform of the oscillation is a rectangular pulse.
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72.20.Ht High-field and nonlinear effects
72.80.Ga Transition-metal compounds

A new type of voltage‐controlled negative resistance in thin samples of InSb

Katsutoshi Kamakura and Nobuo Mutoh

Appl. Phys. Lett. 27, 214 (1975); http://dx.doi.org/10.1063/1.88433 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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A new type of voltage‐controlled negative resistance is observed in very thin samples of n‐InSb in a high electric field in the region of avalanche breakdown (E≳600 V/cm) and a transverse high magnetic field (B≳1 kG) at 77 K. The negative resistance is observed only in thin samples whose thickness is less than about 30 μm regardless of the length. The mechanism of negative resistance seems to be different from proposed effects such as trapping of hot electrons, Gunn effect, and the acoustoelectric domain effect.
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72.20.Ht High-field and nonlinear effects
72.30.+q High-frequency effects; plasma effects
72.80.Ey III-V and II-VI semiconductors

Transform‐limited picosecond pulse generation in a synchronous mode‐locked dye laser pumped by doubled Nd:YAG

L. S. Goldberg and C. A. Moore

Appl. Phys. Lett. 27, 217 (1975); http://dx.doi.org/10.1063/1.88434 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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Synchronous mode locking of a dye laser longitudinally pumped by the second‐harmonic pulse train from a passively mode‐locked, repetitively pulsed Nd:YAG laser has been studied. The dye laser, incorporating Fabry‐Perot tuning elements, has produced intense TEM00 pulses as short as 12 psec in duration with a transform‐limited bandwidth of 2 cm−1. The mode‐locked dye pulses are time synchronizable with the intense Nd:YAG pulses and have been tuned from 549–727 nm using several laser dyes. Both lasing efficiency and pulse duration exhibit pronounced cavity length dependences that result from processes of gain depletion and population recycling during a pumping pulse. Pulses shorter than the pump are generated under cavity length conditions for which only gain depletion effects occur.
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42.55.Mv Dye lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.72.-g Optical sources and standards
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates

Strength of fiber optical waveguides

Robert D. Maurer

Appl. Phys. Lett. 27, 220 (1975); http://dx.doi.org/10.1063/1.88435 (2 pages) | Cited 24 times

Online Publication Date: 2 September 2008

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Optical waveguides must withstand tensile stresses over kilometers of length where one flaw can be fatal. The strength of long lengths has not been previously studied but this paper presents a few preliminary data and compares them with the more abundant data on short lengths. Weibull statistics provide the logical basis for this comparison. The same Weibull constants adequately describe the long‐length data and the low‐strength portion of the short‐length data. Flaws in 10–100 km lengths, therefore, seem to be of the same class as those found in relatively short gage lengths.
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81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics
46.50.+a Fracture mechanics, fatigue and cracks

Selective growth of metal‐rich silicide of near‐noble metals

K. N. Tu

Appl. Phys. Lett. 27, 221 (1975); http://dx.doi.org/10.1063/1.88436 (4 pages) | Cited 148 times

Online Publication Date: 2 September 2008

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Near‐noble metals react with Si to form a metal‐rich silicide at 100 to 200 °C. Growth of the silicide is selected by the criterion that diffusion of near‐noble metal atoms to the silicide‐silicon interface is needed in order to maintain a high interface mobility. Structure of the metal‐rich silicide facilitates the diffusion. It has been postulated that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
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