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15 Aug 1975

Volume 27, Issue 4, pp. 163-259

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Crystallization of amorphous silicon films by Nd:YAG laser heating

John C. C. Fan and H. J. Zeiger

Appl. Phys. Lett. 27, 224 (1975); http://dx.doi.org/10.1063/1.88437 (3 pages) | Cited 29 times

Online Publication Date: 2 September 2008

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We have converted amorphous Si films into crystalline Si by heating with focused Nd:YAG laser radiation. The films were scanned by a focused laser beam and then studied by reflection electron microscopy and x‐ray diffraction. These studies indicate that crystallite sizes as large as 25 μm were produced and suggest that a crystallization technique using a scanned laser beam focused to a slit image could be useful in preparing large‐grain Si films for photovoltaic cells.
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68.55.-a Thin film structure and morphology
81.05.Cy Elemental semiconductors
79.20.Ds Laser-beam impact phenomena
84.60.-h Direct energy conversion and storage

CO chain‐reaction chemical laser

W. Q. Jeffers and H. Y. Ageno

Appl. Phys. Lett. 27, 227 (1975); http://dx.doi.org/10.1063/1.88438 (3 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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The operation of a CO chemical laser fueled by carbon monosulfide (CS) and oxygen and pumped by a chain‐reaction mechanism is reported. For CS‐to‐CS2 mole ratios of 2.0, the chain length is 8.5. The optical performance of this chain‐reaction laser, producing specific energies of 67 kJ/lbm, is superior to the performance of previous CO chemical lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.30.-b Specific chemical reactions; reaction mechanisms
78.60.Ps Chemiluminescence

Anomalous diffusion of arsenic in silicon during low‐temperature heat treatment

H. Shibayama, H. Masaki, and H. Hashimoto

Appl. Phys. Lett. 27, 230 (1975); http://dx.doi.org/10.1063/1.88439 (2 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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It was found that diffusion of arsenic, and boron underneath the arsenic‐diffused layer, was accelerated during low‐temperature heat treatment. This diffusivity is extremely large in comparison to the normal one, and depends on the treatment time. The effective diffusion coefficients of arsenic at 700 °C are 1×10−16 cm2/sec for 5 h and 7×10−18 cm2/sec for 170 h. Such a phenomenon may be due to the excess vacancies formed during these treatments. This effect also causes the emitter dip effect in the npn transistor using arsenic for the emitter impurity.
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66.30.J- Diffusion of impurities

High‐frequency limitation of metal‐insulator‐metal point‐contact diodes

H. D. Riccius

Appl. Phys. Lett. 27, 232 (1975); http://dx.doi.org/10.1063/1.88440 (2 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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It is shown that for frequencies above 200 THz the antenna impedance is predominantly the surface impedance of the tungsten whisker. Because of the high surface resistance of the order of 104 Ω, the whisker can no longer act as an efficient receiving antenna.
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84.40.Ba Antennas: theory, components and accessories
73.40.Rw Metal-insulator-metal structures

Laser‐excited photoluminescence of three‐layer GaAs double‐heterostructure laser material

F. R. Nash, R. W. Dixon, P. A. Barnes, and N. E. Schumaker

Appl. Phys. Lett. 27, 234 (1975); http://dx.doi.org/10.1063/1.88405 (4 pages) | Cited 21 times

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The successful fabrication of high‐quality DH GaAs lasers from a simplified three‐layer structure is reported. A major asset of this structure is the transparency of its final layer to recombination radiation occurring in the active layer, thus permitting the use of nondestructive photoluminescent techniques for material evaluation prior to device fabrication. In the course of photoluminescence investigations on this material the additional important observation has been made that indirect excitation (in which photocarriers are generated in the top ternary layer) has significant advantages over direct excitation (in which photocarriers are generated directly in the active layer). These include (i) the direct measurement of Al concentrations in both upper layers, (ii) the measurements of the minority‐carrier diffusion length in the upper layer, (iii) an easily obtained indication of taper in the thickness of the upper layer, and (iv) surprisingly effective excitation of the active layer. By combining direct and indirect excitation it is shown that a clearer understanding of the location and detrimental influences of defects in the GaAs laser structure may be obtained. For example, the width of the region of reduced luminescence associated with many defects is found to be very excitation dependent and is confirmed to arise from reduced active region luminescence. The photoluminescent excitation techniques described should be useful in the study of other heterostructure devices and material systems.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.55.-m Photoluminescence, properties and materials
85.60.Jb Light-emitting devices
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates

Measurement of very short optical delays in multimode fibers

B. Crosignani, B. Daino, and P. Di Porto

Appl. Phys. Lett. 27, 237 (1975); http://dx.doi.org/10.1063/1.88406 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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We describe a new method for measuring group‐delay differences between the modes of an optical fiber of the order of 1 psec. This is accomplished by Fourier analyzing the intensity output of the fiber, which is fed with a quasimonochromatic signal whose frequency is linearly modulated in time. We present the results of an experiment, in which time delays of the order of 10 psec have been measured. This confirms the potential of the method for measuring dispersion in optical fibers.
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42.81.-i Fiber optics
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
06.30.Ft Time and frequency

Trap saturation in silicon solar cells

E. Fabre, M. Mautref, and A. Mircea

Appl. Phys. Lett. 27, 239 (1975); http://dx.doi.org/10.1063/1.88407 (3 pages) | Cited 12 times

Online Publication Date: 2 September 2008

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The spectral response of silicon solar cells has been studied under different conditions of excitation. The photocurrent variations are not linear with incident flux, and the minority‐carrier diffusion length increases under solar illumination because of trap saturation. It is thus possible to fabricate efficient solar cells with a lower‐quality material.
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84.60.Jt Photoelectric conversion
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects

Integrated GaAs‐AlGaAs double‐heterostructure lasers

C. E. Hurwitz, J. A. Rossi, J. J. Hsieh, and C. M. Wolfe

Appl. Phys. Lett. 27, 241 (1975); http://dx.doi.org/10.1063/1.88408 (3 pages) | Cited 16 times

Online Publication Date: 2 September 2008

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Integrated structures consisting of a double‐heterostructure GaAs‐AlGaAs etched‐mesa Fabry‐Perot laser coupled to a high‐purity GaAs waveguide have been fabricated and tested. Room‐temperature threshold current densities as low as 7.5 kA/cm2 for 1‐μm‐thick active layers were measured.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.82.-m Integrated optics

Stimulated emission at 281.8 nm from XeBr

S. K. Searles and G. A. Hart

Appl. Phys. Lett. 27, 243 (1975); http://dx.doi.org/10.1063/1.88409 (3 pages) | Cited 117 times

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Xenon with 0.10–4% Br2 was excited by an e‐beam device over the range 10–3000 Torr. Stimulated emission was observed on the transition XeBr∗→Xe+Br+hν (281.8 nm). Proof of laser emission and mechanistic details are discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.40.Bj Oscillations, chaos, and bifurcations

Low‐threshold LPE In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1−@qL x′ Gax′P1−z′Asz′ yellow double‐heterojunction laser diodes (J<104 A/cm2, λ∼5850 Å, 77 °K)

W. R. Hitchens, N. Holonyak, P. D. Wright, and J. J. Coleman

Appl. Phys. Lett. 27, 245 (1975); http://dx.doi.org/10.1063/1.88410 (3 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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Liquid phase epitaxial (LPE) In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1−@qL x′ Gax′P1−z′Asz′ (x′∼0.66, z′∼0.005; x∼0.71, z∼0.10) double‐heterojunction laser diodes that operate in the yellow at relatively low current densities (J<104 A/cm2, λ∼5850 Å, 77 °K) are reported. The lattice‐matched LPE quaternary growth process, employing GaAs1−yPy substrates, and the double‐heterojunction laser diode properties are described.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.60.Fi Electroluminescence

Ultrafast guided‐light beam deflection/switching and modulation using simulated electro‐optic prism structures in LiNbO3 waveguides

C. S. Tsai and P. Saunier

Appl. Phys. Lett. 27, 248 (1975); http://dx.doi.org/10.1063/1.88411 (3 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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Theoretical and experimental results on new guided‐wave electro‐optic devices for ultrafast optical deflection, switching, and modulation are presented. The devices utilize simple electrode arrangements consisting of a small number of tilted electrodes which effectively simulate prism structures in electro‐optic waveguides. Devices using single‐mode Y‐cut LiNbO3 outdiffused waveguides have demonstrated excellent performance figures: nine beam positions (channels) per unit at a driving voltage of 8 V per beam position, −0.5 dB optical insertion loss and cross talks between adjacent channels varying from −13.5 to −9 dB. The new devices are shown to be capable of performing optical multiport beam deflection/switching and modulation at very low driving voltages and at ultrafast speeds because of their very small capacitances, and are, therefore, highly useful for future wide‐band fiber and integrated optic systems.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects

Novel metal‐clad optical components and method of isolating high‐index substrates for forming integrated optical circuits

P. K. Tien, R. J. Martin, and S. Riva‐Sanseverino

Appl. Phys. Lett. 27, 251 (1975); http://dx.doi.org/10.1063/1.88412 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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One of the difficulties in integrated optics is to form passive and active devices of different materials on a common substrate. We have solved part of the difficulty by introducing a technique of isolating low‐index devices from a high‐index substrate. We also report novel metal‐clad optical components which can be formed on any substrate.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.25.Gy Edge and boundary effects; reflection and refraction

Hole conduction and valence‐band structure of Si3N4 films on Si

Z. A. Weinberg and R. A. Pollak

Appl. Phys. Lett. 27, 254 (1975); http://dx.doi.org/10.1063/1.88413 (2 pages) | Cited 47 times

Online Publication Date: 2 September 2008

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Transport measurements were performed on thin films of Si3N4 deposited on Si using carrier injection from low‐energy corona ions and a shallow junction detector. Large hole conduction is found for both corona polarities. Examination of the electronic structure of Si3N4 by x‐ray photoemission spectroscopy (XPS or ESCA) reveals one broad structure 10 eV wide (FWHM) at the top of the valence bands which results from the bonding of the Si 3s, Si 3p, and N 2p orbitals. This finding is consistent with the hole conduction we observe. The XPS results are compared with those from amorphous SiO2. The tops of the valence band of Si3N4 and SiO2 are found to lie 1.5±0.2 eV and 4.5±0.2 eV, respectively, below the Fermi level of a thin overlayer of gold.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.20.Mq Elemental semiconductors
71.20.Nr Semiconductor compounds

Electron and hole transport in CVD Si3N4 films

Bob H. Yun

Appl. Phys. Lett. 27, 256 (1975); http://dx.doi.org/10.1063/1.88414 (3 pages) | Cited 29 times

Online Publication Date: 2 September 2008

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This letter reports on the finding that holes are more mobile than electrons in chemically vapor deposited (CVD) Si3N4. MIS structures with Si3N4 films as the insulating layers are used in the experiments. Holes are shown to be electrically injected from the silicon into the insulator when the aluminum‐gate electrode is pulsed negative, and electrons when pulsed positive, with subsequent trapping in the nitride. The centroid of the trapped‐hole distribution, Xh, and that of the trapped‐electron distribution, Xe, as functions of the voltage pulse amplitude and duration are measured. The ratio of Xh/Xe increases with the amplitude of the pulse and its duration, where the centroids are referenced from the injection source, and exceeds 3 when the hole distribution spans the entire nitride thickness. Data suggest that hole traps are perhaps shallower than electron traps, hence the enhanced hole conduction in the silicon nitride.
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73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Domain wall velocity in orthoferrites

S. Konishi, T. Miyama, and K. Ikeda

Appl. Phys. Lett. 27, 258 (1975); http://dx.doi.org/10.1063/1.88415 (2 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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The domain wall velocity in YFeO3 and TbFeO3 single‐crystal platelets is measured by the bubble‐collapse method. Though weak knees like saturation occur at 4800, 8000, and 14 000 m/sec, the wall velocity in YFeO3 increases nearly linearly with increasing drive field up to 25 000 m/sec at a drive field of 370 Oe. The velocity in TbFeO3 increases linearly up to 3000 m/sec (600 Oe). A mechanism quite different from that in garnet films appears to be operative in orthoferrites.
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75.60.Ch Domain walls and domain structure
75.50.Gg Ferrimagnetics
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