Liquid phase epitaxial (LPE) In1−x′
∼0.10) double‐heterojunction laser diodes that operate in the yellow at relatively low current densities (J
, λ∼5850 Å, 77 °K) are reported. The lattice‐matched LPE quaternary growth process, employing GaAs1−y
substrates, and the double‐heterojunction laser diode properties are described.