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1 Sep 1975

Volume 27, Issue 5, pp. 261-309


Nonlinear propagation of void front during electromigration in alloy films

P. S. Ho and J. K. Howard

Appl. Phys. Lett. 27, 261 (1975); http://dx.doi.org/10.1063/1.88458 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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Void formation during electromigration has been observed near the anode edge of a Cu‐Al zone in an Al stripe. Growth of new voids was continuous with a void front propagating along the electron flow direction at a nonlinear rate. Such motion of the void front can be quantitatively correlated to the electromigration of Cu at grain boundaries. The measured displacements of the void front were analyzed to yield the grain‐boundary diffusivity and effective charge for Cu electromigration.
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66.30.J- Diffusion of impurities
68.60.-p Physical properties of thin films, nonelectronic
82.45.-h Electrochemistry and electrophoresis

Acoustic‐surface‐wave velocity decrease produced by ion implantation in lithium niobate

P. Hartemann

Appl. Phys. Lett. 27, 263 (1975); http://dx.doi.org/10.1063/1.88459 (3 pages)

Online Publication Date: 2 September 2008

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Ion implantation was found to reduce the velocity of an acoustic surface wave propagating in lithium niobate. This frequency‐dependent decrease may be mainly attributed to a reduction of the effective electromechanical coupling coefficient as reported in this letter. The impedance of 138‐MHz interdigital transducers deposited on implanted niobate substrates has been determined versus ion dose.
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61.72.U- Doping and impurity implantation
72.50.+b Acoustoelectric effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

High‐field conduction and breakdown in liquid sulfur

J. M. Proud and J. J. Auborn

Appl. Phys. Lett. 27, 265 (1975); http://dx.doi.org/10.1063/1.88460 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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The absence of C‐H bonds in aprotic and particularly in molecular liquids possessing a wide liquid range enhances the probability of observing α processes in these liquids. Evidence for electron multiplication and breakdown in the liquid phase of sulfur is presented. Current‐voltage nonlinearities and the bubble‐free development of electrical discharges are observed.
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72.20.Ht High-field and nonlinear effects
52.80.Wq Discharge in liquids and solids
77.22.Jp Dielectric breakdown and space-charge effects

Surface‐induced molecular orientation of liquid crystals by carboxylatochromium complexes

Shoichi Matsumoto, Masahiro Kawamoto, and Nagao Kaneko

Appl. Phys. Lett. 27, 268 (1975); http://dx.doi.org/10.1063/1.88461 (3 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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Tetrachloro–μ‐hydroxo–μ‐carboxylatodichromium (III) complexes have been used to induce homeotropic alignment of nematic, smectic, and large‐pitch cholesteric liquid crystals. A dynamic scattering degradation test has shown that this orientation is remarkably stable.
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81.05.-t Specific materials: fabrication, treatment, testing, and analysis

Dark‐field and stereo viewing with the acoustic microscope

W. L. Bond, C. C. Cutler, R. A. Lemons, and C. F. Quate

Appl. Phys. Lett. 27, 270 (1975); http://dx.doi.org/10.1063/1.88462 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Images from the acoustic microscope can be recorded with increased clarity and additional detail if one uses an ’’off‐axis’’ arrangement wherein the axis of the output lens is tilted with respect to the input lens. Also, stereograms have been recorded by canting the plane of the object. With a stereoscopic viewer, depth information becomes apparent and texture can be seen.
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07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)
42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics

Diagnostics of a stationary MPD‐type plasma jet with a HCN laser interferometer

Wolfram Graser and Peter Hoffmann

Appl. Phys. Lett. 27, 273 (1975); http://dx.doi.org/10.1063/1.88463 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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A HCN laser interferometer of the Ashby‐Jephcott type operating at a wavelength of 337 μm was used to measure spatially resolved electron densities in a stationary MPD‐type plasma jet with non‐LTE behavior. Experiments were performed with and without superimposed magnetic fields up to 0.1 T at the exit of the plasma accelerator. Electron densities were obtained within the limits of 5×1012 and 1015 cm−3 with an accuracy better than 10%. Within the axially symmetric expanding plasma of about 15‐cm average diameter and 50‐cm length the radial resolving power came to less than 1 cm. So this technique has proved to be suitable to fill a gap in the diagnostics of stationary magnetized plasmas in the mean range of electron densities.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
07.60.Ly Interferometers
42.62.-b Laser applications

Model for the bleaching of WO3 electrochromic films by an electric field

Brian W. Faughnan, Richard S. Crandall, and Murray A. Lampert

Appl. Phys. Lett. 27, 275 (1975); http://dx.doi.org/10.1063/1.88464 (3 pages) | Cited 70 times

Online Publication Date: 2 September 2008

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Measurements have been made of the current flow in amorphous WO3 films containing electrons and mobile cations. In a configuration in which electrons are extracted at one contact and cations at the other, the current decays as t−3/4 over many decades of time. By using space‐charge current flow ideas, we develop a theory that gives the correct time dependence and magnitude of the current for this double‐extraction phenomenon.
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61.72.jn Color centers
52.25.Fi Transport properties
82.45.-h Electrochemistry and electrophoresis

High‐field diffusion of electrons in silicon

C. Canali, C. Jacoboni, G. Ottaviani, and A. Alberigi‐Quaranta

Appl. Phys. Lett. 27, 278 (1975); http://dx.doi.org/10.1063/1.88465 (3 pages) | Cited 31 times

Online Publication Date: 2 September 2008

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With the time‐of‐flight technique we have measured the longitudinal diffusion coefficient of electrons in silicon at 300 K for fields from Ohmic up to 50 kV/cm. The results have been interpreted by means of Monte Carlo calculations with a theoretical model which includes the many‐valley (ellipsoidal and nonparabolic) structure of the band, acoustic intravalley, and several f and g intervalley scattering mechanisms.
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72.20.Ht High-field and nonlinear effects
72.80.Cw Elemental semiconductors
71.20.Mq Elemental semiconductors
71.20.Nr Semiconductor compounds

Development of an efficient 9‐kW 496‐μm CH3F laser oscillator

D. R. Cohn, T. Fuse, K. J. Button, B. Lax, and Z. Drozdowicz

Appl. Phys. Lett. 27, 280 (1975); http://dx.doi.org/10.1063/1.88445 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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A 496‐μm CH3F cavity laser characterized by an average power of 9 kW and predominant single longitudinal mode operation with a linewidth of 28 MHz has been constructed. The power conversion efficiency of the laser (CH3F power out/CO2 pump power in) is on the order of 1.5×10−3. The CH3F gas is pumped in a zig‐zag fashion by the CO2 laser radiation.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Simple technique for determination of centroid of nitride charge in MNOS structures

H. Maes and R. J. Van Overstraeten

Appl. Phys. Lett. 27, 282 (1975); http://dx.doi.org/10.1063/1.88446 (3 pages) | Cited 28 times

Online Publication Date: 2 September 2008

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A simple technique is proposed to determine the exact amount of charge in the nitride layer of MNOS structures and the centroid of its distribution throughout the layer. The technique is only significant for MNOS devices with a thick nitride layer. From experimental data it is shown, using this technique, that the charge is trapped deep into the nitride layer, to a depth depending on the initial nitride field.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

A simple pulsed laser system tunable in the ultraviolet

G. H. Atkinson and M. W. Schuyler

Appl. Phys. Lett. 27, 285 (1975); http://dx.doi.org/10.1063/1.88447 (3 pages)

Online Publication Date: 2 September 2008

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A flashlamp‐pumped dye laser, operating with a 55‐nsec (FWHM) pulsed output, has been used in conjunction with a 90° phase‐matched nonlinear optical crystal (ADA) to generate tunable radiation in the 290–300‐nm region at power levels greater than 1 kW.
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42.55.Mv Dye lasers
42.72.-g Optical sources and standards
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Enhancement of Schottky solar cell efficiency above its semiempirical limit

Martin A. Green

Appl. Phys. Lett. 27, 287 (1975); http://dx.doi.org/10.1063/1.88448 (2 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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Geometries are described for increasing the efficiency of Schottky solar cells above the theoretical limits recently calculated. The ultimate conversion efficiencies for the new cells are the same as for p‐n junction devices. With present technology, improvements of over 50% above the old limits are possible.
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84.60.Jt Photoelectric conversion
85.30.Hi Surface barrier, boundary, and point contact devices

Electrically switched optical directional coupler: Cobra

M. Papuchon, Y. Combemale, X. Mathieu, D. B. Ostrowsky, L. Reiber, A. M. Roy, B. Sejourne, and M. Werner

Appl. Phys. Lett. 27, 289 (1975); http://dx.doi.org/10.1063/1.88449 (3 pages) | Cited 63 times

Online Publication Date: 2 September 2008

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We report the realization, in titanium‐diffused lithium niobate, of an integrated optical switch/modulator consisting of an active directional coupler with a novel electrode configuration. Efficient switching is observed with 6 V applied.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics

Third harmonic generation from laser‐produced plasma

H. A. Baldis, H. Pépin, and B. Grek

Appl. Phys. Lett. 27, 291 (1975); http://dx.doi.org/10.1063/1.88450 (2 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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Third harmonic emission has been observed from a laser‐created plasma, using a nanosecond TEA CO2 laser. The observed threshold for this emission is 6×1012 W cm−2.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Efficient electrical initiation of an HF chemical laser

J. A. Mangano, R. L. Limpaecher, J. D. Daugherty, and F. Russell

Appl. Phys. Lett. 27, 293 (1975); http://dx.doi.org/10.1063/1.88451 (3 pages) | Cited 13 times

Online Publication Date: 2 September 2008

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Efficient electron‐beam initiation of an atmospheric‐pressure HF chain‐reaction laser has been demonstrated. Intrinsic electrical efficiencies of up to 875% have been observed with laser output energy densities of up to 51 J/liter atm at low initiation levels. This result was obtained for a laser mixture containing H2:F2:He:O2 at mole fractions of 0.08:0.30:0.61:0.01. Laser output energy was extracted from a volume of 104 cm3.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence
82.30.-b Specific chemical reactions; reaction mechanisms

Output coupling and distributed feedback utilizing substrate corrugations in double‐heterostructure GaAs lasers

D. R. Scifres, R. D. Burnham, and W. Streifer

Appl. Phys. Lett. 27, 295 (1975); http://dx.doi.org/10.1063/1.88452 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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Conventional double‐heterostructure lasers with a thin n‐Ga1−yAlyAs layer grown on a periodically corrugated n‐GaAs substrate have been operated at room temperature. The evanescent tail of the guided mode interacts with the substrate corrugation to produce both distributed feedback and output coupling perpendicular to the waveguide. A single polarized low‐divergence (0.65°×10°) output beam at 8825 Å radiated normal to the waveguide was obtained from such a diode with cleaved end facets at a threshold current of 4.1 kA/cm2.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.82.-m Integrated optics
85.60.Jb Light-emitting devices
42.79.Dj Gratings

Saturation of impurity photoconductivity in n‐GaAs with intense YAG laser light

G. K. Celler, S. Mishra, and Ralph Bray

Appl. Phys. Lett. 27, 297 (1975); http://dx.doi.org/10.1063/1.88453 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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We report the observation of saturation of impurity photoconductivity in semiconducting n‐GaAs illuminated by a Q‐switched Nd:YAG laser with light intensity up to 3.5 MW/cm2. From the saturation of conductivity we determined the concentration of defects to be ≈1016 cm−3. These form the well‐known 1.2‐eV absorption band and are presumably Ga vacancies. The curve of photoconductivity versus light intensity can be fitted with a simple model, which yields the electron recombination coefficient. The relation of the absorption band to nonlinear optical studies in GaAs at 1.06 μ is reviewed.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
72.40.+w Photoconduction and photovoltaic effects
42.65.-k Nonlinear optics

Proposed atomic mercury anti‐Stokes frequency converter

H. Komine and R. L. Byer

Appl. Phys. Lett. 27, 300 (1975); http://dx.doi.org/10.1063/1.88454 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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We propose to use population stored in the radiatively trapped 6°P1° atomic mercury resonant level (1850 Å) for frequency conversion by an anti‐Stokes or two‐photon process. Inversion is with respect to the lower‐lying 63P °0,1,2 levels which are assumed empty following selective quenching or rapid conversion to the mercury dimer. Photon conversion gains of 2.5×10−2 cm/MW for 1.06‐μm and 8.7×10−5 cm/MW for 10.6‐μm input wavelengths with corresponding 0.4157‐ and 0.9116‐μm output wavelengths are calculated at a 1016‐cm−3 inversion density.
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32.80.Xx Level crossing and optical pumping
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Controlled‐inversion transistors

H. Kroger and H. A. R. Wegener

Appl. Phys. Lett. 27, 303 (1975); http://dx.doi.org/10.1063/1.88455 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Current‐voltage characteristics similar to those of a semiconductor‐controlled rectifier have been observed in three‐terminal devices which have only a single p‐n junction. The structure investigated is a layered sequence of metal/conducting ’’insulator’’/p‐silicon/n+‐silicon with electrical terminals at the metal and both sides of the junction. If a positive bias is applied to the metal the device can reside in either a low‐ or a high‐impedance state. These states are brought about by controlling the presence or absence of the inversion layer at the insulator‐silicon interface. Experimental data demonstrate the efficiency of this control permitted by the third intermediate terminal.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Infrared molecular lasers pumped by electronic‐vibrational energy transfer from Br(42P1/2): CO2, N2O, HCN, and C2H2 

Alan B. Petersen, Curt Wittig, and Stephen R. Leone

Appl. Phys. Lett. 27, 305 (1975); http://dx.doi.org/10.1063/1.88456 (3 pages) | Cited 48 times

Online Publication Date: 2 September 2008

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Infrared lasers pumped by electronic‐vibrational (E‐V) energy transfer are reported. Gas mixtures containing electronically excited Br atoms (2P1/2) are prepared by flash photolyzing Br2 in the presence of a polyatomic molecule. The ensuing E‐V process is selective and pumps the polyatomic molecule into specific energy states. In addition to obtaining gain and/or stimulated emission at CO2 and N2O laser frequencies, we have obtained stimulated emission from HCN at 3.85, 7.25, and 8.48 μm, and from C2H2 in the region 7–8 μm. Extension of the principles involved to other polyatomic molecules is straightforward, and a number of applications are suggested by our results to date.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

High‐resolution direct‐display x‐ray topography

W. Hartmann, G. Markewitz, U. Rettenmaier, and H. J. Queisser

Appl. Phys. Lett. 27, 308 (1975); http://dx.doi.org/10.1063/1.88457 (2 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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A new system for the direct video display of x‐ray diffraction topographs is described. The pattern is converted to an optical signal by a fine‐grain fluorescent screen, which is viewed by a video camera through a magnifying optical system. We have achieved a resolution of about 10 μm, suitable for detailed direct observations of individual dislocations in materials such as silicon. The system combines efficient usage of source intensity, large field of vision, and circumvention of an electronic suppression of Kα2 images.
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07.85.-m X- and γ-ray instruments
61.05.C- X-ray diffraction and scattering
61.72.Lk Linear defects: dislocations, disclinations
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