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15 Sep 1975

Volume 27, Issue 6, pp. 311-370

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Pyroelectric response to infrared radiation signals at the FR(LT)‐FR(HT) transition in lead titanate‐zirconate

R. R. Zeyfang, W. H. Sehr, and K. V. Kiehl

Appl. Phys. Lett. 27, 311 (1975); http://dx.doi.org/10.1063/1.88481 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Pyroelectric voltage transients obtained from modified Pb(Ti0.07Zr0.93)O3 ceramics in response to step ir signals were studied between 20 and 100 °C, in which range the FR(LT)‐FR(HT) transition occurs. The temperature dependences of peak voltage and total released charge exhibit a pronounced peak at about 85 °C with a small temperature hysteresis indicating that this transition is not purely of second order. The pyroelectric coefficient between room temperature and the transition temperature increases by about a factor 10. The dynamical behavior and the dielectric properties are discussed and their potential for the development of ir devices operating at or near this phase transition is outlined.
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77.70.+a Pyroelectric and electrocaloric effects

Investigation of defects and striations in as‐grown Si crystals by SEM using Schottky diodes

A. J. R. de Kock, S. D. Ferris, L. C. Kimerling, and H. J. Leamy

Appl. Phys. Lett. 27, 313 (1975); http://dx.doi.org/10.1063/1.88482 (3 pages) | Cited 22 times

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As‐grown silicon crystals are investigated in the scanning electron microscope using Schottky barrier diodes in the electron‐beam‐induced current mode. Dislocations, A‐ and B‐type swirl defects, as well as dopant striations are detected. In high‐resistivity crystals (∼1000 Ω cm) variations in dopant concentration of 1012 cm−3 are readily revealed. Hydrogen doping is found to eliminate preferential recombination at microdefects. It is established that bulk stresses due to carbon striations have no detectable electrical effect.
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61.72.Lk Linear defects: dislocations, disclinations
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Structural investigation of cold‐rolled metallic glasses using positron annihilation methods

H. S. Chen and S. Y. Chuang

Appl. Phys. Lett. 27, 316 (1975); http://dx.doi.org/10.1063/1.88483 (2 pages) | Cited 31 times

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The effect of cold rolling on the structure of a metallic glass Pd0.775Cu0.06Si0.165 and a crystalline Pd has been investigated using positron annihilation methods. Only slight change in both the positron lifetime and angular distribution upon cold rolling has been noted for the metallic glass. This is in strong contrast to a large change observed for the crystalline Pd. It is therefore concluded that cold rolling of the metallic glass induces no vacancylike defects. It is also suggested that the local atomic rearrangements during plastic deformation may lead to the densification of the metallic glass.
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81.05.Kf Glasses (including metallic glasses)

Diatomic versus atomic secondary ion emission

K. Wittmaack and G. Staudenmaier

Appl. Phys. Lett. 27, 318 (1975); http://dx.doi.org/10.1063/1.88484 (3 pages) | Cited 14 times

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The yield ratio of diatomic versus atomic secondary ion emission from metals and semiconductors has been studied using two different mass spectrometers. Under ultrahigh vaccum conditions and with argon primary ions, yield ratios in excess of unity were observed for a variety of elements at secondary ion energies below about 10 eV.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Diffusion of iron ions in a cold liquid: Evidence against a ’’jump’’ model

S. L. Ruby, J. C. Love, P. A. Flinn, and B. J. Zabransky

Appl. Phys. Lett. 27, 320 (1975); http://dx.doi.org/10.1063/1.88485 (3 pages) | Cited 21 times

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We take macroscopic (x‐ray attenuation) and microscopic (Mössbauer line broadening) measurements of ions diffusing in a cold liquid. Combined, the results demonstrate that jumps the size of lattice dimensions do not take place, in contrast to crystalline diffusion. Surprisingly from molecular dynamical considerations, D is Arrhenius‐like over four decades.
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66.10.-x Diffusion and ionic conduction in liquids

Stimulated emission from CO+ pumped by charge transfer from He+2 in the afterglow of an e‐beam discharge

R. A. Waller, C. B. Collins, and A. J. Cunningham

Appl. Phys. Lett. 27, 323 (1975); http://dx.doi.org/10.1063/1.88486 (3 pages) | Cited 14 times

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Stimulated emission from the B2Σ state of CO+ has been observed as a consequence of the charge transfer reaction between He+2 and CO in the afterglow of a Febetron 706 discharge into 3 atm of helium containing 1.0 Torr of carbon monoxide. Peak gains of the order of 0.08 cm−1 were found for the (0,2) vibrational component of the B2Σ→X2Σ transition at 2470 Å by directly measuring the time‐resolved amplification of suitably filtered light from a xenon flashlamp. Correspondingly smaller gain, persisting for several hundred nanoseconds, was found for the (0,0) and (0,1) vibrational components of the B2Σ→A2Π transitions at 3954 and 4210 Å, respectively.
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52.80.Hc Glow; corona
34.50.-s Scattering of atoms and molecules
32.80.Xx Level crossing and optical pumping

Cross‐sectional electron microscopy of silicon on sapphire

M. S. Abrahams and C. J. Buiocchi

Appl. Phys. Lett. 27, 325 (1975); http://dx.doi.org/10.1063/1.88487 (3 pages) | Cited 40 times

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Cross sections of (100)Si/(012)sapphire were examined by transmission electron microscopy. The foil plane was (011)Si and contained the [100]Si growth direction. The number of faults (i.e., microtwins and isolated stacking faults) per cm measured in the [022]Si direction, FD, decreases with increasing distance d from the silicon/substrate growth interface according to the equations FD= (3.1×107)/d0.63 (440⩽d⩽2400 Å), and FD= (1.3×1011)/d1.7 (2400?d?4.3×104 Å). Misfit dislocations were not observed, and no evidence for the presence of an Al‐bearing phase was seen in the proximity of the interface.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Filaments in semiconductor lasers

J. E. Ripper, F. D. Nunes, and N. B. Patel

Appl. Phys. Lett. 27, 328 (1975); http://dx.doi.org/10.1063/1.88488 (3 pages) | Cited 5 times

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Filament profiles in cw stripe‐geometry homostructure GaAs lasers are measured from below to well above threshold through their optical spectra. It is shown that the filament appears well below threshold and its dimensions are not a strong function of injection level and consequently of the optical field intensity. These results are at variance with previously published theories.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Impact ionization coefficients for electrons and holes in In0.14Ga0.86As

T. P. Pearsall, R. E. Nahory, and M. A. Pollack

Appl. Phys. Lett. 27, 330 (1975); http://dx.doi.org/10.1063/1.88489 (3 pages) | Cited 18 times

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We report the measurement of impact ionization rates for electrons and holes in the direct band‐gap semiconductor alloy In0.14Ga0.86As. Our results show clearly that the ionization rate for holes is greater than that for electrons. The measurments were made for electric fields between 2.6×105 and 3.4×105 V cm−1. In this range, the ionization coefficients can be expressed as α=α∞ exp(‐A/E) for electrons and β=β∞ exp(‐B/E) for holes with α∞=1.0×109 cm−1, A=3.6×106 V cm−1, and β∞=1.3×108 cm−1, B=2.7×106 V cm−1.
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79.20.Kz Other electron-impact emission phenomena
72.20.Ht High-field and nonlinear effects

Photoluminescence of boron‐implanted AlxGa1−xAs (x=0.37)

Yunosuke Makita and Shun‐ichi Gonda

Appl. Phys. Lett. 27, 333 (1975); http://dx.doi.org/10.1063/1.88490 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Optical characteristics of B (group‐III) isoelectronic impurity in AlxGa1−xAs (x=0.37) are investigated by photoluminescence measurements. Two new bands are observed at 2 K in B‐implanted and annealed AlxGa1−xAs. One band is at 167.4 meV below the edge emission line, the other at 23.5 meV. The latter is observed clearly only through time‐resolved spectroscopy, because the donor‐acceptor pair emission almost overlaps the band. These observations suggest that the B impurity makes bound states in AlxGa1−xAs.
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78.55.-m Photoluminescence, properties and materials

Population inversions in atomic cesium in the cesium‐fluorine reaction system

Lawrence H. Hall

Appl. Phys. Lett. 27, 335 (1975); http://dx.doi.org/10.1063/1.88466 (3 pages) | Cited 4 times

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The chemiluminescence of the electronically excited cesium atom in the cesium‐fluorine reaction system was analyzed to give relative excited‐state populations. Pumping rates into each state have been calculated. The populations measured show 27 population inversions on optically allowed transitions.
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78.60.Ps Chemiluminescence

Self‐imaging in homogeneous planar optical waveguides

R. Ulrich and G. Ankele

Appl. Phys. Lett. 27, 337 (1975); http://dx.doi.org/10.1063/1.88467 (3 pages) | Cited 75 times

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The formation of one‐dimensional self‐images in planar optical waveguides is described ray optically and is demonstrated experimentally. The self‐images can be erect or inverted, single or multiple, and magnified or demagnified. Possible applications in integrated optics include a cross over of strip guides, a simple 3‐dB directional coupler, and a filter.
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42.79.Gn Optical waveguides and couplers

Frequency‐controlled cw tunable GaAs laser

J.‐L. Picqué and S. Roizen

Appl. Phys. Lett. 27, 340 (1975); http://dx.doi.org/10.1063/1.88468 (3 pages) | Cited 18 times

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A cw single‐mode tunable GaAs diode laser has been locked to an external passive cavity by making use of the dependence of the output frequency on the injection current. The resulting long‐term stability of the laser optical frequency was checked by reference to a microwave frequency standard, through the light‐shift effect in a cesium vapor. The laser frequency was found to track the drift of the cavity bandpass with residual variations less than 300 kHz rms. Servo‐controlled frequency scanning was achieved over 5 GHz.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Ionized Zn doping of GaAs molecular beam epitaxial films

Mitsuru Naganuma and Kiyoshi Takahashi

Appl. Phys. Lett. 27, 342 (1975); http://dx.doi.org/10.1063/1.88469 (3 pages) | Cited 15 times

Online Publication Date: 2 September 2008

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Molecular beam epitaxial growth of GaAs with an ionized Zn beam as dopant is reported. In the normal molecular beam epitaxy, the sticking coefficient of Zn is nearly zero and Zn has not been used as a dopant. By ionizing the Zn atoms, a sticking coefficient of ∼0.03 was obtained, and this value is much larger than that of any other p‐type dopants for GaAs except for Ge which is amphoteric.
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68.55.-a Thin film structure and morphology

Double‐wavelength laser

Haim Lotem and R. T. Lynch

Appl. Phys. Lett. 27, 344 (1975); http://dx.doi.org/10.1063/1.88470 (3 pages) | Cited 11 times

Online Publication Date: 2 September 2008

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A new technique is reported which allows a laser to operate simultaneoulsy at two or more wavelengths from a high‐gain grating‐ or prism‐tuned laser. This is done by inserting a small‐angle wedge in the laser to form two independent cavities. The relative intensities at the output wavelengths are governed by the wedge location. Tuning of the new wavelength is accomplished by rotating the wedge. The difference frequency between the two output wavelengths is not limited by the gain characteristics of the active medium since different active media can be used simultaneously. The wedge technique was used in a nitrogen‐laser‐pumped dye laser and the usefulness of such a laser in nonlinear opitcal experiments was shown.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Mv Dye lasers

Saturation effects in a tunable coherent near‐infrared source

Israel L. Tyler, R. W. Alexander, and R. J. Bell

Appl. Phys. Lett. 27, 346 (1975); http://dx.doi.org/10.1063/1.88471 (2 pages) | Cited 8 times

Online Publication Date: 2 September 2008

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A saturation effect in a tunable infrared source utilizing four‐wave parametric conversion in potassium vapor is reported and is shown to be the result of parasitic oscillations. A hundredfold increase over previously attained power levels has been effected via elimination of these oscillations.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Holographic subtraction using anisotropic centers in alkali halide crystals

Irwin Schneider, William C. Collins, Michael J. Marrone, and Michael E. Gingerich

Appl. Phys. Lett. 27, 348 (1975); http://dx.doi.org/10.1063/1.88472 (3 pages) | Cited 1 time

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Coherent partial holographic erasure and selective erasure of volume holograms is demonstrated using the linear record and erase capability of photodichroic crystals, i.e., alkali halides with anisotropic color centers.
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42.40.Ht Hologram recording and readout methods
61.72.jn Color centers

Laser action on the 2Σ+1/2→2Σ+1/2 bands of KrF and XeCl

J. J. Ewing and C. A. Brau

Appl. Phys. Lett. 27, 350 (1975); http://dx.doi.org/10.1063/1.88473 (3 pages) | Cited 147 times

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This letter describes two new lasers operating on the 2Σ+1/2→2Σ+1/2 bands of XeCl (at 308 nm) and KrF (at 249 nm). Pumping was achieved by high‐intensity electron beam excitation of high‐pressure Ar containing small amounts of Xe and Cl2 or Kr and F2. An efficiency of about 0.4% was observed in the initial experiments on KrF, and higher efficiencies appear possible.
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51.70.+f Optical and dielectric properties
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Simultaneous determination of the total content of boron and phosphorus in high‐resistivity silicon by ir spectroscopy at low temperatures

B. O. Kolbesen

Appl. Phys. Lett. 27, 353 (1975); http://dx.doi.org/10.1063/1.88474 (3 pages) | Cited 17 times

Online Publication Date: 2 September 2008

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The simultaneous determination of the total concentrations of B and P in silicon (ρ≳50 Ω cm) by a simple ir‐spectroscopic technique at low temperatures (≈15 K) is reported. In general, in partly compensated semiconductor crystals only the neutral centers, e.g., the difference ‖nA−nD‖ of the donors and acceptors present, contribute to the ir absorption spectrum. Through excitation with polychromatic light containing wavelengths which cause the fundamental band transition, the previoulsy ionized compensated donors or acceptors are neutralized by the mechanism of optical charge exchange and can quantitatively be observed in the absorption spectrum. The reliability of this method was checked by a comparison of the spectroscopically determined concentrations with those evaluated by four‐point‐probe measurements. A degree of compensation below 10% has been observed only for a small fraction of the samples with ρ≳50 Ω cm.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbx@qL double heterostructure LED’s in the 1‐μm wavelength region

R. E. Nahory, M. A. Pollack, E. D. Beebe, and J. C. DeWinter

Appl. Phys. Lett. 27, 356 (1975); http://dx.doi.org/10.1063/1.88475 (2 pages) | Cited 13 times

Online Publication Date: 2 September 2008

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Double‐heterostructure (DH) GaAs1−xSbx/AlyGa1−yAs1−xSbx@qL electroluminescent diodes (LED’s) emitting in the 1‐μm wavelength region have been prepared by liquid phase epitaxy. Total external efficiencies of 2% have been obtained in junction edge emission. These devices are considerably more efficient than GaAs1−xSbx homojunction LED’s grown in a similar manner.
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85.60.Jb Light-emitting devices

Generation of single‐picosecond dye laser pulses using one‐ and two‐photon traveling‐wave excitation

A. N. Rubinov, M. C. Richardson, K. Sala, and A. J. Alcock

Appl. Phys. Lett. 27, 358 (1975); http://dx.doi.org/10.1063/1.88476 (3 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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Single‐photon and two‐photon traveling‐wave excitation of superradiant emission in Rhodamine 6G by single‐picosecond 1.06‐μ laser pulses is reported. In addition, results are presented on the application of optical Kerr‐effect photography to a time‐resolved spectroscopic study of the dye laser emission.
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42.55.Mv Dye lasers

Electro‐optic effects in the optically active compounds Bi12TiO20 and Bi40Ga2O63

A. J. Fox and T. M. Bruton

Appl. Phys. Lett. 27, 360 (1975); http://dx.doi.org/10.1063/1.88477 (3 pages) | Cited 20 times

Online Publication Date: 2 September 2008

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The electro‐optic effects in the optically active 23 class compounds Bi12TiO20 (BTIO) and Bi40Ga2O63 (BGAO) have been investigated. Measurements were made of the electro‐optic and electrogyration coefficients using longitudinal and transverse modes. Novel techniques employing a servo‐driven Soleil compensator were used to obtain these coefficients. A value of η=17×10−12 rad m/V was obtained for the electrogyratory coefficient in the BTIO compound.
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78.20.Jq Electro-optical effects

The possibility of an efficient tunable molecular iodine laser near 340 nm

M. V. McCusker, R. M. Hill, D. L. Huestis, D. C. Lorents, R. A. Gutcheck, and H. H. Nakano

Appl. Phys. Lett. 27, 363 (1975); http://dx.doi.org/10.1063/1.88478 (3 pages) | Cited 26 times

Online Publication Date: 2 September 2008

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We have observed intense band emissions between 340 and 344 nm from electron‐beam‐excited mixtures of high‐pressure argon gas and iodine vapor. This emission appears to be from molecular iodine. Using the 357.6‐nm band from an Ar/N2 mixture as a calibration, we have measured the fluorescence yield in this wavelength region to be 70±24%. From this we computed an over‐all fluorescence energy efficiency of 13±4%. Based on these observations, we suggest the feasibility of an efficient high‐energy electron‐beam‐pumped argon‐iodine laser. The gain of such an argon‐iodine laser should be comparable to that of the Ar/N2 second positive laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Granular aluminum SQUID’s

G. Deutscher and R. Rosenbaum

Appl. Phys. Lett. 27, 366 (1975); http://dx.doi.org/10.1063/1.88479 (3 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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Granular aluminum thin films have been used to produce rf‐pumped SQUID’s. Owing to the low critical current density of the granular superconductors, SQUID’s with weak links as wide as 40 μm are observed to operate even far below Tc.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
85.25.-j Superconducting devices

Integral Auger information via tailored modulation techniques

R. W. Springer, D. J. Pocker, and T. W. Haas

Appl. Phys. Lett. 27, 368 (1975); http://dx.doi.org/10.1063/1.88480 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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A simple technique for the measurement of Auger N (E) peak heights and areas [I (E)] directly at the phase lock amplifier output has been developed. It is implemented by tailoring the modulation waveform to instrument response function and dynamic background subtraction constraints. Comparisons of results of this approach with those of conventional analog integration show essentially perfect proportionality.
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79.20.Fv Electron impact: Auger emission
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