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1 Oct 1975

Volume 27, Issue 7, pp. 373-415


Peltier‐induced LPE and composition stabilization of GaAlAs

J. J. Daniele

Appl. Phys. Lett. 27, 373 (1975); http://dx.doi.org/10.1063/1.88497 (3 pages) | Cited 22 times

Online Publication Date: 2 September 2008

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Peltier‐induced liquid‐phase epitaxial growth of Ga1−xAlxAs (0.1⩽x⩽0.3) was carried out at constant temperature with the dc as the sole driving force and controlling element of the growth. Electric currents of 10–30 A/cm2 were passed through the solid‐liquid (S‐L) interface (which acts as a Peltier junction) thereby cooling this interface and causing growth. The growth rate is linearly proportional to the current level. GaAlAs layers of 15–58 μm thickness were grown from relatively small melts (∼5 g) at several temperatures in the range 600–850 °C. Photoluminescence microanalysis of the layers showed that the aluminum composition was remarkably uniform throughout the total layer thickness. In all cases, the variation of the aluminum concentration (x) was observed to be ±0.005 or less.
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81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Surface‐wave correlation and time scaling in a structure of Bi12GeO20‐Si‐LiNbO3

W. C. Wang and K. S. Meng

Appl. Phys. Lett. 27, 375 (1975); http://dx.doi.org/10.1063/1.88498 (3 pages)

Online Publication Date: 2 September 2008

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Surface‐acoustic‐wave correlation of two signals has been performed by using space‐charge nonlinearity in a layered structure of Bi12GeO20‐Si‐LiNbO3. The two surface waves are collinear and propagate in the same direction. The same structure has also been used in a different mode of operation to perform the functions of convolution and time scaling.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Magnetic insulation and microwave generation

Edward Ott and R. V. Lovelace

Appl. Phys. Lett. 27, 378 (1975); http://dx.doi.org/10.1063/1.88499 (3 pages) | Cited 51 times

Online Publication Date: 2 September 2008

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A relativistic self‐consistent equilibrium is found for the magnetic insulation of a diode for conditions where the voltage rise time is long compared to the cyclotron period. Instability of the magnetic insulation equilibrium may allow high‐power pulsed microwave generation in magnetronlike configurations.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

The use of electronic space charge to accelerate, focus, and bunch ions for pellet fusion

J. T. Verdeyen, D. A. Swanson, B. E. Cherrington, and W. L. Johnson

Appl. Phys. Lett. 27, 380 (1975); http://dx.doi.org/10.1063/1.88500 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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Theoretical arguments are presented which show that electronic space charge can transfer large amounts of energy to ions while simultaneously focusing and bunching their arrival at a small pellet.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.90.+c Other topics in materials science (restricted to new topics in section 81)

Subpicosecond chronoscopy

D. J. Bradley and W. Sibbett

Appl. Phys. Lett. 27, 382 (1975); http://dx.doi.org/10.1063/1.88501 (3 pages) | Cited 25 times

Online Publication Date: 2 September 2008

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Subpicosecond time resolution with a new design of the electron‐optical streak camera (the Photochron II) is demonstrated with ultrashort Raman pulses.
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06.60.Jn High-speed techniques (microsecond to femtosecond)

Conditions for shock vaporization of metals

K. Hornung and K. W. Michel

Appl. Phys. Lett. 27, 385 (1975); http://dx.doi.org/10.1063/1.88502 (3 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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We briefly describe the method and communicate the results of a number of calculations concerning the shock vaporization of different metals which are of practical interest for atmospheric and ionospheric vapor releases (Li, Na, Sr, Ba, Pb, Eu, Fe, and U). The calculations include the determination of shock‐wave entropies and residual temperatures, as well as a model description of the vaporization process upon expansion of the released material into vacuum. The results contain explicit values for the degree of vaporization from the onset up to conditions corresponding to critical entropy, depending upon shock strength.
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64.70.Hz Solid-vapor transitions
62.50.-p High-pressure effects in solids and liquids

Empirical corrections to the energy loss of 4He ions in oxides

J. F. Ziegler, W. K. Chu, and J. S.‐Y. Feng

Appl. Phys. Lett. 27, 387 (1975); http://dx.doi.org/10.1063/1.88503 (4 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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A survey of the experimental energy loss of 4He ions shows systematic differences between elemental solids and gases. The solid‐gas differences are proposed as an empirical first‐order correction to obtain solid‐target values from gas‐target stopping cross sections. These corrections are of the order of 20% for 4He ions of 1 MeV. A series of experiments on the energy loss of 4He ions in oxygen and nitrogen in solid oxides and nitrides are in agreement with the empirical correction factor proposed.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Mixed metal vapor phase matching for third‐harmonic generation

D. M. Bloom, J. F. Young, and S. E. Harris

Appl. Phys. Lett. 27, 390 (1975); http://dx.doi.org/10.1063/1.88504 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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Phase matching for frequency tripling of 1.06 μm is demonstrated in a homogeneous mixture of sodium and magnesium vapor. For phase matching, the ratio of Mg to Na vapor pressures is 2 : 1. This ratio is about 1/75 of the ratio of Xe to Na required for phase matching.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

A new luminescence line due to nitrogen implanted into AlxGa1−xAs (x=0.37)

Shun‐ichi Gonda and Yunosuke Makita

Appl. Phys. Lett. 27, 392 (1975); http://dx.doi.org/10.1063/1.88505 (3 pages) | Cited 13 times

Online Publication Date: 2 September 2008

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Optical behavior of isoelectronic impurities in AlxGa1−xAs (x=0.37) is investigated. Photoluminescence of the samples implanted with N was measured at 2 °K. A new luminescence line is observed at an energy which is 90 meV below the edge emission peak. The integrated intensity of the N‐implanted sample is about five times larger than that of an unimplanted and annealed sample. This is thought to be due to the bound states produced by the N atoms which replace the As atoms.
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78.55.-m Photoluminescence, properties and materials

A laser velocimeter utilizing laser‐induced fluorescence

Warren H. Stevenson, Reginaldo dos Santos, and Stephen C. Mettler

Appl. Phys. Lett. 27, 395 (1975); http://dx.doi.org/10.1063/1.88506 (2 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Addition of a fluorescent dye to the liquid used for scattering particle production in a laser Doppler velocimeter can result in a number of practical advantages. An investigation of this concept has been carried out using various dyes and solvents to determine its potential and limitations. The term ’’fringe mode fluorescence velocimetry’’ is recommended to describe this technique.
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42.62.-b Laser applications
06.30.Gv Velocity, acceleration, and rotation

Picosecond optical detection by high‐speed sampling of photoelectrons

James J. Wiczer and Henry Merkelo

Appl. Phys. Lett. 27, 397 (1975); http://dx.doi.org/10.1063/1.88507 (3 pages) | Cited 1 time

Online Publication Date: 2 September 2008

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It is demonstrated that photoelectrons distributed in initial velocity can be extracted from electrically broad‐band configurations with extremely high time resolutions. Properties and values of parameters characterizing real materials and laboratory‐generated electrical sampling signals are used throughout the analysis. These results provide the basis for the design of practical high‐speed sampling photodetectors that can extend the resolution of incoherent low‐level optical signals to a few picoseconds.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Chemical trends in oxygen uptake rates at the ordered surfaces of tetrahedrally coordinated compound semiconductors

Peter Mark and William F. Creighton

Appl. Phys. Lett. 27, 400 (1975); http://dx.doi.org/10.1063/1.88491 (4 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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It is observed that oxygen uptake at ordered free surfaces of tetrahedrally coordinated semiconductors decreases with increasing bonding ionicity. This behavior is compared with the dependence of the contact potential at a Schottky barrier on the semiconductor bonding ionicity, and an explanation based on the Mead–Spitzer and Phillips models is suggested.
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68.60.-p Physical properties of thin films, nonelectronic
73.40.Cg Contact resistance, contact potential

cw operation of distributed‐feedback GaAs‐GaAlAs diode lasers at temperatures up to 300 K

M. Nakamura, K. Aiki, J. Umeda, and A. Yariv

Appl. Phys. Lett. 27, 403 (1975); http://dx.doi.org/10.1063/1.88492 (3 pages) | Cited 24 times

Online Publication Date: 2 September 2008

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Distributed‐feedback GaAs‐GaAlAs diode lasers with separate optical and carrier confinement have been successfully operated under dc bias up to room temperature. They lased in a single longitudinal mode with a threshold current density of 0.94 kA/cm2 at 170 K and 3.5 kA/cm2 at 300 K.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Embedded heterostructure epitaxy: A technique for two‐dimensional thin‐film definition

I. Samid, C. P. Lee, A. Gover, and A. Yariv

Appl. Phys. Lett. 27, 405 (1975); http://dx.doi.org/10.1063/1.88493 (3 pages) | Cited 13 times

Online Publication Date: 2 September 2008

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Selective multilayer epitaxial growth of GaAs‐Ga1−xAlxAs through stripe openings in Al2O3 mask is reported. The technique results in prismatic layers of GaAs and Ga1−xAlxAs ’’embedded’ in each other and leads to controllable uniform structures terminated by crystal faces. The crystal habit (shape) has features which are favorable for fabrication of cw injection lasers, laser arrays, and integrated optics components which require planar definition.
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68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Laser emission at 1.32 μm from atomic iodine produced by electrical dissociation of CF3I

L. D. Pleasance and L. A. Weaver

Appl. Phys. Lett. 27, 407 (1975); http://dx.doi.org/10.1063/1.88494 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Laser emission on the I(2P1/2) →I(2P3/2) transition at 1.32 μm has been excited for the first time in an electrical discharge. A mixture of about 1% CF3I in N2 was excited in a uv‐initiated pulsed dicharge between planar electrodes. Iodine atoms in the upper and lower laser levels are generated by dissociative excitation of CF3I molecules upon electron impact. The lower laser level is depopulated by rapid recombination of the iodine atoms.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.60.Ps Chemiluminescence
52.80.-s Electric discharges

Raman studies of the electro‐optic properties of CuX (X=Cl, Br, I) multicrystallite samples

A. Ben‐Amar and E. Wiener‐Avnear

Appl. Phys. Lett. 27, 410 (1975); http://dx.doi.org/10.1063/1.88495 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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A measurement of the Raman scattering efficiencies from an ensemble of random‐oriented cyrstallites provides a method for evaluating the electro‐optic coefficients in CuX (X=Cl, Br, I) binary zinc‐blend semiconductors. A systematic trend in the values of both the electronic and ionic contributions to the nonlinear response is found to be related to the ionicities in these crystals.
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78.30.Hv Other nonmetallic inorganics

High‐power xenon fluoride laser

E. R. Ault, R. S. Bradford, and M. L. Bhaumik

Appl. Phys. Lett. 27, 413 (1975); http://dx.doi.org/10.1063/1.88496 (3 pages) | Cited 99 times

Online Publication Date: 2 September 2008

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High‐power laser emission has been observed from xenon fluoride (XeF) at 351.1 and 353.1 nm. A peak laser power of 0.5 MW was obtained by using a mixture of Ar, Xe, and NF3 in the ratio of 250 : 25 : 1 at a total pressure of 1.7 atm. The laser gas was excited by a 1‐MeV 20‐kA electron beam for a pulse duration of 20 nsec. Energy deposited in the gas by the electron beam was estimated to be 1 J which gives a laser efficiency of 0.5%. Using a coaxial electron gun, an 80‐mJ 100‐nsec pulse was obtained with an efficiency of 3%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
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