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15 Oct 1975

Volume 27, Issue 8, pp. 419-475

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Study of SAW propagation characteristics by frequency‐translated holography

S. Shiokawa, T. Moriizumi, and T. Yasuda

Appl. Phys. Lett. 27, 419 (1975); http://dx.doi.org/10.1063/1.88514 (2 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Under the condition of continuous acoustic generation the patterns of forward, backward, and standing SAW’s propagating on a y‐cut z‐propagating LiNbO3 crystal were observed clearly by the frequency‐translated holographic technique. The parameters of surface‐wave propagation velocity, reflectivity, and transmissivity for an interdigital transducer could be obtained by this technique.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
42.40.Kw Holographic interferometry; other holographic techniques
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Piezochemisorption effect: A new method for modulating the rate of chemisorption on polar crystals

J. Lagowski, H. C. Gatos, and E. S. Sproles

Appl. Phys. Lett. 27, 420 (1975); http://dx.doi.org/10.1063/1.88515 (3 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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It was found that mechanical strain has a striking effect on the chemisorption rate of the polar surfaces of ZnO. Depending on its sign, a strain as low as 10−3 can increase or decrease the rate of chemisorption by more than an order of magnitude. This piezochemisorption effect was shown to be consistent with a model based on strain‐induced changes in the height of the surface potential barrier and the surface barrier‐controlled transfer of electrons between the semiconductor and the adsorbed species.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Large electrostrictive effect in doped alkali halide crystals

H. Burkard and W. Känzig

Appl. Phys. Lett. 27, 423 (1975); http://dx.doi.org/10.1063/1.88516 (2 pages) | Cited 6 times

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The electrostriction of alkali halide crystals containing substitutional impurities (the paraelectric systems KCl:Li+, NaBr:F−, RbCl:Ag+, RbBr:Ag+, KCl:OH−, and the system KBr:Li+) has been measured for concentrations of the order 1017–1018 cm−3. Some of these systems exhibit a giant almost temperature‐independent electrostrictive effect that does not saturate.
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77.65.-j Piezoelectricity and electromechanical effects

Calculated energy distributions for light 0.25–18‐keV ions scattered from solid surfaces

J. E. Robinson, A. A. Harms, and S. K. Karapetsas

Appl. Phys. Lett. 27, 425 (1975); http://dx.doi.org/10.1063/1.88517 (3 pages) | Cited 7 times

Online Publication Date: 2 September 2008

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Scattered energy distributions are calculated for light ions incident on Nb and Mo surfaces of interest for controlled nulcear fusion reactors. The scattered energy is found to vary as a function of the reflection coefficient between a multiple‐collision limit at low energies and a single‐collision Rutherford scattering limit at high energies. High‐energy peaking of the scattered particle distributions is also found for low incident energies.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
29.40.-n Radiation detectors

Tertiary defects in phosphorus‐implanted silicon

M. Tamura, N. Yoshihiro, and T. Ikeda

Appl. Phys. Lett. 27, 427 (1975); http://dx.doi.org/10.1063/1.88518 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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Transmission electron microscopic observations have been made on dislocations generated in high‐dose (1×1015–3×1016 ions/cm2) phosphorus‐implanted (111) silicon wafers followed by 1100 °C isothermal annealing in inert (dry N2) and oxidizing (wet O2) atmospheres. The generation and movement of dislocations in a wafer are strongly influenced by atmospheres during annealing. In dry‐N2 annealing, the critical ion dose for generation of dislocation networks is 1×1016 ions/cm2, which is three times higher than that in wet‐O2 annealing. Also, dislocations move down to greater depths in a wafer after annealing in a wet‐O2 atmosphere, while in dry‐N2 annealing their location in a wafer is usually unchanged.
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61.72.Lk Linear defects: dislocations, disclinations
61.72.U- Doping and impurity implantation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Photoresponse and barrier height of Pb‐Pb oxide‐Pb sandwich structures

K. H. Gundlach and J. Kadlec

Appl. Phys. Lett. 27, 429 (1975); http://dx.doi.org/10.1063/1.88519 (4 pages) | Cited 6 times

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The spectral dependence of the photocurrent in Pb‐Pb oxide‐Pb structures is investigated varying both the electrode thickness and the resistance of the junctions. The samples exhibit sign reversal of the photocurrent with changing photon energy hν. The effect is strongly controlled by the electrode thickness and direction of illumination. Zero‐bias barrier heights betwen 0.8 and 1 eV have been deduced from the threshold of the photoresponse. Onset of band‐to‐band excitation in the oxide film has probably been observed at hν≃2.7 eV for thermally oxidized samples and at hν≃2.9 eV for plasma‐oxidized samples.
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73.40.Rw Metal-insulator-metal structures
72.40.+w Photoconduction and photovoltaic effects

Quantum interference Josephson logic devices

H. H. Zappe

Appl. Phys. Lett. 27, 432 (1975); http://dx.doi.org/10.1063/1.88520 (3 pages) | Cited 21 times

Online Publication Date: 2 September 2008

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Experiments with latching and nonlatching quantum interference logic devices are described. The device is a three‐junction interferometer, switching with control currents of <0.5 mA. Simple logic functions have been performed with dc‐powered nonlatching devices having a power dissipation of <40 nW in continuous operation.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.30.Sk Pulse and digital circuits
85.25.-j Superconducting devices

354‐nm laser action on XeF

C. A. Brau and J. J. Ewing

Appl. Phys. Lett. 27, 435 (1975); http://dx.doi.org/10.1063/1.88521 (3 pages) | Cited 109 times

Online Publication Date: 2 September 2008

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This letter reports laser action on the xenon monofluoride 2Σ1/2→2Σ1/2 band at 354 nm. Lasing on discrete vibrational bands has been achieved by pulse excitation of high‐pressure mixtures of F2/Xe/Ar with an electron beam. XeF is a member of a new class of diatmoic molecules, the noble gas monohalides, which all exhibit similar molecular structure and spectra, and laser action should be attainable on the various bands of other members of this class of molecules. The kinetics and loss mechanisms of these laser candidates are briefly discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Jc Visible and ultraviolet spectra
78.60.Ps Chemiluminescence

Hole injection and transport in SiO2 films on Si

Z. A. Weinberg

Appl. Phys. Lett. 27, 437 (1975); http://dx.doi.org/10.1063/1.88522 (3 pages) | Cited 23 times

Online Publication Date: 2 September 2008

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Hole and electron transport in SiO2 films thermally grown on Si are observed by detecting the carrier arrival at the Si with a shallow junction detector. Carrier generation and injection near the Al‐SiO2 interface are achieved by uv photons obtained from a Ne discharge. Following charging of an exposed SiO2 surface by negative ions from a corona discharge, we find large amounts of holes near the Si‐SiO2 interface with a dependence on substrate crystallographic orientation. The film charges up to an average field of 14.5±0.5 MV/cm. These findings suggest an alternative mechanism to impact ionization for initiation of breakdown in MOS structures.
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72.20.Ht High-field and nonlinear effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Particulate semiconductor solar cells

L. R. Weisberg, C. F. Grain, and R. R. Addiss

Appl. Phys. Lett. 27, 440 (1975); http://dx.doi.org/10.1063/1.88508 (2 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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A new method of fabricating solar cells is proposed, namely, using particulate semiconductor layers deposited in a binder by high‐speed emulsion coating technology. The feasibility of this approach was demonstrated by the fabrication of a solar cell using particulate ZnO layers with over 50% quantum efficiency, and 3% power conversion efficiency, to uv light.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Spectral narrowing and electro‐optical tuning of a pulsed dye laser by injection locking to a cw dye laser

J. J. Turner, E. I. Moses, and C. L. Tang

Appl. Phys. Lett. 27, 441 (1975); http://dx.doi.org/10.1063/1.88509 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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It is shown that the single‐element electro‐optical birefringent filter can be used to tune the relatively high‐gained flashlamp‐pumped pulsed dye laser across the entire dye emission band, but the resulting laser line width is relatively wide as might be expected. However, this line width could be drastically reduced without losing the tunability by injection locking the pulsed laser to an electro‐optically tuned cw dye laser. The beam direction, collimation, spectral width, and stability of the pulsed laser can, therefore, all be precisely controlled through the cw laser beam.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Lanthanum beryllate: A new rare‐earth ion laser host

R. C. Morris, C. F. Cline, R. F. Begley, M. Dutoit, P. J. Harget, H. P. Jenssen, T. S. La France, and R. Webb

Appl. Phys. Lett. 27, 444 (1975); http://dx.doi.org/10.1063/1.88510 (2 pages) | Cited 10 times

Online Publication Date: 2 September 2008

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Optical quality crystals, measuring up to 2.5×20 cm, of the compound La2Be2O5 : Nd3+ have been grown from the melt. The results of physical‐ and optical‐property measurements and laser testing (long pulse, Q switched, and cw mode) are reported. Linearly polarized laser oscillations at 1.07 and 1.08 μm are observed. Long‐pulse slope efficiencies about 60% greater than for YAG : Nd at comparable pumping thresholds and Q‐switched energy storage nearly three times that of YAG : Nd are also observed.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

cw double mode locking of the dye laser experiment

Z. A. Yasa and O. Teschke

Appl. Phys. Lett. 27, 446 (1975); http://dx.doi.org/10.1063/1.88511 (2 pages) | Cited 9 times

Online Publication Date: 2 September 2008

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A mixture of rhodamine 6G and cresyl violet is pumped by a cw argon laser. Inversion of cresyl violet by the absorption of the lasing rhodamine 6G wavelength results in doubly mode‐locked operation, with an ultrashort pulse at 5740 Å followed by an ultrashort pulse at 6440 Å.
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42.55.Mv Dye lasers

Technique for producing ’’good’’ GaAs solar cells using poor‐quality substrates

H. J. Hovel and J. M. Woodall

Appl. Phys. Lett. 27, 447 (1975); http://dx.doi.org/10.1063/1.88512 (3 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Relatively good GaAs solar cells can be made from poor‐quality substrates by making the junction deep (≳1 μ) instead of shallow and by ’’leaching’’ both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
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84.60.Jt Photoelectric conversion
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
72.40.+w Photoconduction and photovoltaic effects

Picosecond‐gated optical amplifier

G. E. Busch, K. S. Greve, G. L. Olson, R. P. Jones, and P. M. Rentzepis

Appl. Phys. Lett. 27, 450 (1975); http://dx.doi.org/10.1063/1.88513 (3 pages) | Cited 11 times

Online Publication Date: 2 September 2008

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A picosecond‐gated optical amplifier (PGOA) characterized by high gains (≳102), large extinction ratios (∼105), and short aperture times (∼10 psec) is described. The active component of the system is a saturable absorbing dye which is irradiated by a high‐intensity ultrashort laser pulse. The technique is illustrated by simultaneously gating and amplifying a weak picosecond continuum pulse propagating through a scattering medium. Performance characteristics of the PGOA and ultrafast shutters are compared.
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42.79.-e Optical elements, devices, and systems
42.62.-b Laser applications
42.65.-k Nonlinear optics

Phase separation in silicon oxides as seen by Auger electron spectroscopy

J. S. Johannessen, W. E. Spicer, and Y. E. Strausser

Appl. Phys. Lett. 27, 452 (1975); http://dx.doi.org/10.1063/1.88523 (3 pages) | Cited 27 times

Online Publication Date: 2 September 2008

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Auger electron spectroscopy has been used in a study of chemical structure effects in silicon oxides caused by changes in the over‐all stoichiometry. Thermally grown silicon dioxide and vacuum‐deposited unsaturated silicon oxides SiOx were investigated. Chemical shifts in the Si KLL spectra are interpreted in terms of phase separation in SiOx for 0<x<2. The preferred phases are Si and SiO2. We believe that the minor component exists as microscopic inclusions, larger than some 15–20 Å, in the predominant component.
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64.75.-g Phase equilibria
68.55.-a Thin film structure and morphology

Photolytic detection of H2S with a PbSe sensor

J. J. Young and J. N. Zemel

Appl. Phys. Lett. 27, 455 (1975); http://dx.doi.org/10.1063/1.88524 (2 pages)

Online Publication Date: 2 September 2008

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The sensitivity of PbSe epitaxial films to atomic hydrogen was used to detect the photodissociation of H2S by ultraviolet radiation. It was also observed that H2S would cause a response similar to that of atomic hydrogen, suggesting that H2S dissociates on the PbSe surface.
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82.50.Hp Processes caused by visible and UV light
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Md Surface thermodynamics, surface energies

External higher‐index mode filters for band widening of multimode optical fibers

K. Furuya, Y. Suematsu, J. Nayyer, S. Ishikawa, and F. Tagami

Appl. Phys. Lett. 27, 456 (1975); http://dx.doi.org/10.1063/1.88525 (3 pages) | Cited 3 times

Online Publication Date: 2 September 2008

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External higher‐index mode filters were fabricated and their filter actions were confirmed experimentally. Loading the multimode fiber with the mode filter, the increase of the pulsewidth at the half‐peak value was reduced from 640 to 130 ps, at the expense of loss penalty of 0.7 dB including the connection losses. These data suggest the effectiveness of mode filter insertion for band widening of multimode fibers.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics
84.40.Az Waveguides, transmission lines, striplines

The role of discrete plasma initiation sites in the high‐intensity laser irradiation of surfaces

P. E. Nielsen

Appl. Phys. Lett. 27, 458 (1975); http://dx.doi.org/10.1063/1.88526 (2 pages) | Cited 6 times

Online Publication Date: 2 September 2008

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The total impulse delivered to solid surfaces through irradiation by CO2 lasers of intensity greater than 107 W/cm2 and pulsewidth of order 10−5 sec agrees well with theories which invoke the ignition of laser‐supported detonation waves whose pressure scales on the 2/3 power of laser intensity, while the measured peak pressure under the irradiated area scales much more strongly with intensity. It is shown that these seemingly contradictory results may be reconciled through a model in which detonation waves are formed from discrete initiation sites whose size distribution determines the peak pressure scaling.
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79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Static conversion of Bloch‐line number and the self‐collapse of hard bubbles

J. Haisma, K. L. L. van Mierloo, W. F. Druyvesteyn, and U. Enz

Appl. Phys. Lett. 27, 459 (1975); http://dx.doi.org/10.1063/1.88527 (4 pages) | Cited 2 times

Online Publication Date: 2 September 2008

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In bubbles carrying at least 100 Bloch lines, called superhard bubbles, the phenomenon of static conversion of the Bloch wall has been observed. Two experiments will be described in detail: (i) the dependence of the number of Bloch lines as a function of the temperature at which the material has been treated and (ii) the phenomenon of the self‐collapse of bubbles having Bloch lines in a supercompressed state.
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75.60.Ch Domain walls and domain structure

ISS depth profile analysis of anodized niobium

K. E. Gray

Appl. Phys. Lett. 27, 462 (1975); http://dx.doi.org/10.1063/1.88528 (3 pages) | Cited 19 times

Online Publication Date: 2 September 2008

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The first several hundred atomic layers of anodized niobium were studied using ion scattering spectrometer analysis alternated with ion milling. The results show excess oxygen at the surface followed by a layer of stoichiometric Nb2O5. Below this was an unexpected ∼ 80‐Å layer of NbO and, finally, the bulk metal, with oxygen in solid solution. These results have important consequences for some ac superconducting applications since NbO is a normal metal above 1.38 K.
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81.65.Kn Corrosion protection
74.50.+r Tunneling phenomena; Josephson effects
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Ferromagnetism in metallic FexTaS2 (x≈0.28)

M. Eibschütz, F. J. DiSalvo, G. W. Hull, and S. Mahajan

Appl. Phys. Lett. 27, 464 (1975); http://dx.doi.org/10.1063/1.88529 (3 pages) | Cited 28 times

Online Publication Date: 2 September 2008

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Single crystals of FexTaS2 (x≈0.28) are metallic, ferromagnetic (Tc=73±5 °K), and have a large coercive force of 55 kOe at 4.2 °K. Mössbauer measurements show the iron to be high‐spin Fe2+, with a distribution of hyperfine fields at low temperatures. Electron microscopic observations, together with these results, suggest the presence of iron clusters.
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75.50.-y Studies of specific magnetic materials
76.80.+y Mössbauer effect; other γ-ray spectroscopy
75.30.Gw Magnetic anisotropy

Noise measurements in superconducting proximity bridges

S. K. Decker and J. E. Mercereau

Appl. Phys. Lett. 27, 466 (1975); http://dx.doi.org/10.1063/1.88530 (4 pages) | Cited 4 times

Online Publication Date: 2 September 2008

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Experiments and analsis have been done to show that the low‐frequency noise voltage developed across a current‐biased proximity‐coupled superconducting bridge is well described by existing theories of electron tunneling. There is also some evidence that, on a two‐fluid model, normal and supercurrent noise may be correlated. The temperature sensitivity of these bridges is calculated from the measured noise spectrum and is found to compare favorably with existing bolometric techniques.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
85.25.-j Superconducting devices

Frequency conversion in a long Josephson junction with a moving vortex array

K. Yoshida and F. Irie

Appl. Phys. Lett. 27, 469 (1975); http://dx.doi.org/10.1063/1.88531 (2 pages) | Cited 5 times

Online Publication Date: 2 September 2008

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The dispersion relation of small electromagnetic waves applied in the uniform flux-flow state of a long Josephson junction has been obtained. The results contain exponentially growing waves due to the parametric interaction between the applied fields and the moving vortices, which indicates the possibility of a Josephson-junction frequency converter of the traveling-wave type.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.50.+r Tunneling phenomena; Josephson effects
74.81.Fa Josephson junction arrays and wire networks
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Some properties of granular thin films of high‐field superconductors

Harris C. Jones

Appl. Phys. Lett. 27, 471 (1975); http://dx.doi.org/10.1063/1.88532 (3 pages) | Cited 14 times

Online Publication Date: 2 September 2008

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The resistance as a function of temperature, the superconducting critical temperature, and the upper critical field of NbN and Nb3Ge thin films have been measured. These measurements may be explained in terms of a model of a granular superconductor. The properties of NbN and Nb3Ge may be universal characteristics of high‐field granular superconductors.
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
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