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15 Jun 1976

Volume 28, Issue 12, pp. 695-748


Experimental results with acoustic lenses in a Bragg‐diffraction imaging system

L. Schlussler and G. Wade

Appl. Phys. Lett. 28, 695 (1976); http://dx.doi.org/10.1063/1.88639 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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A cylindrical acoustic lens, inserted into the sound cell of a Bragg‐diffraction imaging system, can substantially improve the resolution. In the conventional system, the resolution for an object which spatially modulates the isonifying beam in a direction parallel to the propagation of the laser light is determined by the numerical aperture of the wedge‐forming optical lens. However, with the cylindrical acoustic lens in the system, the above resolution is instead determined by the numerical aperture of this acoustic lens. The use of this lens also eliminates the need for several optical components in the system and provides directly for an image with a correct aspect ratio.
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43.60.+d Acoustic signal processing
43.58.+z Acoustical measurements and instrumentation
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.30.-d Imaging and optical processing

Liquid‐phase epitaxial growth of Ga1−xAlxAs on the side and top surfaces of air‐exposed Ga1−yAlyAs

Toshihisa Tsukada

Appl. Phys. Lett. 28, 697 (1976); http://dx.doi.org/10.1063/1.88640 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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The LPE growth of Ga1−xAlxAs on the mesa‐etched and air‐exposed surfaces of Ga1−yAlyAs is described. The LPE is shown to begin and proceed at the intersection of the vertical plane (mesa‐etched side) and the horizontal plane (surface of the epitaxial layer). The melt‐back process has also been observed to proceed fast at an intersection such as this. The LPE technique combined with the mesa etching is shown to be effective in obtaining the growth on the top surface of Ga1−yAlyAs provided the aluminum fraction y is relatively small (y≲0.2). This process should prove useful in the fabrication of DFB lasers, as well as optical components such as GaAlAs waveguides and couplers.
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68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.79.Gn Optical waveguides and couplers

Ultrasonic waves in sandwiched fluid film

K. Miyano and Y. R. Shen

Appl. Phys. Lett. 28, 699 (1976); http://dx.doi.org/10.1063/1.88641 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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Using optical diffraction, we have measured the phase velocities of various ultrasonic modes in water films of different thicknesses sandwiched between two glass plates. The results agree well with theory.
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62.60.+v Acoustical properties of liquids
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Microwave emission from a magnetized plasma heated by a short‐pulsewidth relativistic electron beam

R. Okamura, Y. Nakamura, and N. Kawashima

Appl. Phys. Lett. 28, 701 (1976); http://dx.doi.org/10.1063/1.88642 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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Microwave emissions are observed with a long time duration after a beam turn‐off from a magnetized plasma that is heated by a high‐intensity short‐pulsewidth relativistic electron beam (500 keV, 2 kA, 3 ns). The emission has a frequency spectrum which has peaks near cyclotron harmonics (f=nfce, n=2, 3,...). These microwave emissions can be attributed to electrostatic waves excited by hot electrons which are created in the beam‐plasma interaction.
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52.50.Gj Plasma heating by particle beams
52.40.Mj Particle beam interactions in plasmas
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Adequacy of classical inverse bremsstrahlung theory for low‐temperature plasmas

Kenneth W. Billman and James R. Stallcop

Appl. Phys. Lett. 28, 704 (1976); http://dx.doi.org/10.1063/1.88643 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Recent improvements in diagnostic and computation techniques have made it possible to conduct sensitive experiments on plasma heating and thermal conductivity. The adequacy of classical absorption theory for low‐temperature (T<20 eV) subcritical density experiments is examined.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Fi Transport properties

Uniform‐carrier‐concentration p‐type layers in GaAs produced by beryllium ion implantation

J. P. Donnelly, F. J. Leonberger, and C. O. Bozler

Appl. Phys. Lett. 28, 706 (1976); http://dx.doi.org/10.1063/1.88644 (3 pages) | Cited 22 times

Online Publication Date: 28 August 2008

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Multiple‐energy Be+ ion implantation has been used to create uniform‐carrier‐concentration p‐type layers (≳1.5 μm thick) in GaAs. The implanted samples were annealed at 900 °C using pyrolytic Si3N4 as an encapsulant. High activation of the implanted Be was observed. On samples with implanted hole concentrations of 2×1018/cm3, the measured carrier concentration as a function of depth is in good agreement with that expected from LSS range theory. For higher doses, diffusion of the implanted Be was observed. p+n−n+ junctions formed by implantation into undoped epitaxial material have low leakage currents and sharp breakdowns at average electric fields in the n− region of 1.5×105 V/cm.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m

J. J. Hsieh, J. A. Rossi, and J. P. Donnelly

Appl. Phys. Lett. 28, 709 (1976); http://dx.doi.org/10.1063/1.88645 (3 pages) | Cited 94 times

Online Publication Date: 28 August 2008

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Room‐temperature cw operation has been achieved for stripe‐geometry double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid‐phase epitaxy on melt‐grown InP substrates, and stripes were defined by using proton bombardment to produce high‐resistance current‐confining regions.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.82.-m Integrated optics
85.60.Dw Photodiodes; phototransistors; photoresistors

Stimulated emission on Nx(’’A‐line’’) recombination transitions in nitrogen‐implanted GaAs1−xPx(x≈0.37)

D. J. Wolford, B. G. Streetman, R. J. Nelson, and N. Holonyak

Appl. Phys. Lett. 28, 711 (1976); http://dx.doi.org/10.1063/1.88646 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Stimulated emission (4.2 °K) on the NX band recombination transition (formerly identified as NN‐pair band) in N‐implanted GaAs1−xPx(x≈0.37) is reported. The N is implanted (300 °K) at 200 keV to a peak concentration nN∼5×1018 cm−3 (depth 3600 Å), and to remove damage the crystal is later annealed at 950 °C for 0.5 h. The laser operation observed is the first involving an implanted isoelectronic trap, and occurs on the NX band at higher alloy composition than for any previous case.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.45.+h Stimulated emission
78.55.-m Photoluminescence, properties and materials
61.72.U- Doping and impurity implantation

Saturation of the junction voltage in stripe‐geometry (AlGa)As double‐heterostructure junction lasers

Thomas L. Paoli and Peter A. Barnes

Appl. Phys. Lett. 28, 714 (1976); http://dx.doi.org/10.1063/1.88625 (3 pages) | Cited 34 times

Online Publication Date: 28 August 2008

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Saturation of the junction voltage has been observed to occur at the onset of lasing in cw stripe‐geometry (AlGa)As double‐heterostructure junction lasers. Simultaneous measurements of the nonlasing but amplified spontaneous emission confirm that saturation of the optical gain and spontaneous emission accompany the voltage saturation as expected. With well‐behaved lasers the observed saturation is maintained over currents to at least 50% above threshold. In other devices, a loss of saturation is commonly observed to occur simultaneously with a nonlinearity in the current dependence of the lasing emission.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Multimode achromatic electro‐optic waveguide switch for fiber‐optic communications

R. A. Soref, D. H. McMahon, and A. R. Nelson

Appl. Phys. Lett. 28, 716 (1976); http://dx.doi.org/10.1063/1.88626 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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A three‐port multimode electro‐optic switch has been fabricated in a thin c‐cut plate of LiNbO3 using opposed stripe‐and‐plane electrodes to create field‐induced channel waveguides. Fringing electric fields provided multimode optical coupling between channels. Using butt coupling to connect the device into a multimode fiber link, voltage‐controlled switching of laser and white‐light radiation have been demonstrated.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Jq Electro-optical effects
42.81.-i Fiber optics
42.82.-m Integrated optics

Optical transistor

K. Jain and G. W. Pratt

Appl. Phys. Lett. 28, 719 (1976); http://dx.doi.org/10.1063/1.88627 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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A device is proposed which is the optical analog of the transistor wherein a weak incoming optical signal directly controls a strong outgoing optical signal. The basic principle utilized in the proposed device is the strong dependence of second harmonic generation on the phase‐matching condition. A weak incoming signal can perturb the indices of refraction in a birefringent material so that the second harmonic power derived from a pump beam is significantly affected. Large incremental power gain is shown to be possible. Tellurium is considered as an example.
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42.79.-e Optical elements, devices, and systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

Probability of static fatigue failure in optical fibers

David Kalish and B. K. Tariyal

Appl. Phys. Lett. 28, 721 (1976); http://dx.doi.org/10.1063/1.88628 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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An expression for the probability of static fatigue failure in glass is developed based upon a Weibull‐type cumulative strength distribution and a fracture mechanics slow crack growth law. The validity of the analytical model is tested with tensile strength and static fatigue data for fused silica optical fibers. Good agreement between the model and experimental results is demonstrated. Examples for using this model as a predictive tool are presented
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62.20.M- Structural failure of materials
46.50.+a Fracture mechanics, fatigue and cracks
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
42.70.Ce Glasses, quartz

Modeling the KrF laser discharge

J. H. Jacob and J. A. Mangano

Appl. Phys. Lett. 28, 724 (1976); http://dx.doi.org/10.1063/1.88629 (3 pages) | Cited 44 times

Online Publication Date: 28 August 2008

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In this letter we describe modeling of an E‐beam‐controlled discharge operated in gas mixtures containing mainly argon with approximately 10% krypton and a few tenths of a percent fluorine. The discharge physics is dominated by electron impact ionization and excitation of the rare‐gas metastables. The ionization of the metastables impacts the discharge stability directly while their excitation strongly affects the efficiency of pumping KrF∗. Predictions of the model are compared with experimental results.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona

Concentration dependence curves of cathodoluminescence of Y2O2S:Tb

Lyuji Ozawa and Herbert N. Hersh

Appl. Phys. Lett. 28, 727 (1976); http://dx.doi.org/10.1063/1.88630 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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It has been demonstrated that the concentration dependence of cathodoluminescence can be explained by a Brownian motion of the energy carriers out of the penetration volume in which they were initially created by the incident electrons. The model predicts several concentration regions and a crystal size effect. Experimental results for Y2O2S:Tb are in good agreement with the theoretical calculations.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.55.-m Photoluminescence, properties and materials
66.30.Dn Theory of diffusion and ionic conduction in solids

Double absorptions in aggregate‐roughened silver surfaces

R. W. Tokarsky and J. P. Marton

Appl. Phys. Lett. 28, 729 (1976); http://dx.doi.org/10.1063/1.88631 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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The reflectivity from Ag surfaces, formed by overcoating Ag‐aggregated films deposited on heated substrates, shows interesting double absorptions. They appear in two distinct regions, near and beyond 1 μm and at ∼0.35 μm. The former is discussed in terms of a dipole model of the rough surfaces within the Maxwell‐Garnett aprroximation and the latter is proposed to be surface plasmon excitation.
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78.20.-e Optical properties of bulk materials and thin films
73.20.-r Electron states at surfaces and interfaces

Theory of nonresonant multistable optical devices

F. S. Felber and J. H. Marburger

Appl. Phys. Lett. 28, 731 (1976); http://dx.doi.org/10.1063/1.88632 (3 pages) | Cited 90 times

Online Publication Date: 28 August 2008

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We show that a Fabry‐Perot interferometer filled with a Kerr medium has a multiple‐valued transmission‐intensity characteristic. ’’On’’ and ’’off’’ field for bistable operation are estimated, and a simple but accurate approximate theory is described.
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42.62.-b Laser applications
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Use of thin carbon films for selective chemical etching and epitaxial deposition of III‐V semiconductors

G. H. Olsen and V. S. Ban

Appl. Phys. Lett. 28, 734 (1976); http://dx.doi.org/10.1063/1.88633 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Very thin (2 to 100 Å) carbon films have been found to be extremely effective as pattern‐definition masks for the selective deposition of III‐V compounds by vapor‐phase epitaxy (VPE) and liquid‐phase epitaxy (LPE). High‐quality epitaxial layers may subsequently be deposited after removal of the carbon film. This enables complex structures such as optical waveguides to be prepared in these materials.
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68.55.-a Thin film structure and morphology
81.20.-n Methods of materials synthesis and materials processing
81.65.Cf Surface cleaning, etching, patterning
81.65.Ps Polishing, grinding, surface finishing

Optical birefringence of thin GaAs‐AlAs multilayer films

J. P. van der Ziel, M. Ilegems, and R. M. Mikulyak

Appl. Phys. Lett. 28, 735 (1976); http://dx.doi.org/10.1063/1.88634 (3 pages) | Cited 24 times

Online Publication Date: 28 August 2008

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The measured birefringence of the refractive indices of GaAs‐AlAs multilayers grown by molecular beam epitaxy is found to vary from 0.056 at 0.9 μm to 0.042 at 1.1 μm.
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78.20.Fm Birefringence
42.25.Lc Birefringence

Superconducting properties of Nb3(Sn1−xGax) by a solid‐state diffusion process

O. Horigami, Thomas Luhman, C. S. Pande, and M. Suenaga

Appl. Phys. Lett. 28, 738 (1976); http://dx.doi.org/10.1063/1.88635 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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Monofilament Nb3(Sn1−xGax) wires were made by heat treating composites consisting of pure Nb, (Nb–1 wt% Zr), or (Nb–0.7 wt% Ga) in various Cu‐Sn‐Ga alloys matrices. Superconducting critical temperatures Tc and critical current densities Jc(H), up to 18 T were measured for these wires. In several samples both Tc and high‐field critical current densities for the Nb3(Sn1−xGax) compounds were found to exceed pure Nb3Sn. The upper critical field, Hc2, also appeared to be substantially higher than for similarly produced Nb3Sn.
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74.70.-b Superconducting materials other than cuprates

Hard wall sections in gradient‐propagated magnetic bubble domains

Kochan Ju, G. J. Zimmer, and F. B. Humphrey

Appl. Phys. Lett. 28, 741 (1976); http://dx.doi.org/10.1063/1.88636 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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Using high‐speed photography to investigate the transient response of bubbles to a bias field pulse, a shift in the geometrical center has been related to the previous propagation history. For left (right) skew bubbles, a low‐mobility section appeared at the left (right) side of the previous propagation direction. The location of the hard wall section in respect to the propagation direction agrees with Thiele’s vertical Bloch line theory. Applying this method to low‐angle propagators, i.e., bubbles with few Bloch lines, an asymmetric expansion was found after propagation in a gradient drive field that was higher than a certain threshold. For these bubbles, hard wall sections of oppositely wound vertical Bloch lines pinned the two flanks of the bubble and reduced the mobility of the rear allowing the front to expand out asymmetrically. These vertical Bloch line bundles with opposite sense were generated in the front and rear, then clustered on the two flanks during the gradient propagation, consistent with a dynamic converion model.
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75.60.Ch Domain walls and domain structure
75.60.-d Domain effects, magnetization curves, and hysteresis

Time‐dependent translational velocity of magnetic bubble domains

G. P. Vella‐Coleiro

Appl. Phys. Lett. 28, 743 (1976); http://dx.doi.org/10.1063/1.88637 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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The translational motion of magnetic bubble domains in a LuGdAlFe garnet film has been studied by high‐speed photography. It was found that the average bubble velocity during a field gradient pulse is strongly dependent on the pulse duration τ, varying from 4200 cm/sec at τ=100 nsec to 1700 cm/sec at τ=500 nsec, at a field difference across the bubble diameter of 9.3 Oe. Large overshoots were observed at τ=500 nsec, but were greatly reduced at τ=100 nsec.
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75.60.Ch Domain walls and domain structure

Magnetic properties of amorphous Tb‐Fe thin films prepared by rf sputtering

Yoshinori Mimura and Nobutake Imamura

Appl. Phys. Lett. 28, 746 (1976); http://dx.doi.org/10.1063/1.88638 (3 pages) | Cited 31 times

Online Publication Date: 28 August 2008

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The magnetic properties of amorphous TbxFe1−x films prepared by rf cosputtering were studied. For 0.15<x<0.28, the films have uniaxial magnetic anisotropy normal to the film plane sufficient to stabilize cylindrical domains. The Curie temperature Tc and the coercivity Hc were measured as a function of composition. Tc increases monotonically with increasing Tb content in the alloy films in the region 0.1 < x<0.5. Hc is about one order of magnitude large, in contrast with amorphous Gd‐Fe films at room temperature, and it increases further at low temperatures. Amorphous Tb‐Fe films have a high potential for thermomagnetic recording using the Curie temperature because of the large Hc (1–5 kOe) and the low Curie temperature (∼120°C).
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ch Domain walls and domain structure
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.30.Gw Magnetic anisotropy
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