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1 Jan 1976

Volume 28, Issue 1, pp. 1-51


Electronically variable surface‐acoustic‐wave velocity and tunable SAW resonators

Peter S. Cross, William H. Haydl, and Robin S. Smith

Appl. Phys. Lett. 28, 1 (1976); http://dx.doi.org/10.1063/1.88564 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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From measurements of shifts in the resonant frequency of SAW resonators, it has been observed that the SAW propagation velocity under an interdigital transducer varies continuously as a function of external resistive or capacitive loads. For Al on YZ LiNbO3 at 34 MHz, the velocity under a transducer can be varied over a 1.4% range. Resonators, using a transducer to control the cavity transit time, have been fabricated which are continuously tunable up to 60 kHz. Capacitances are found to be superior as tuning elements, owing to the severe degradation of the resonance caused by resistances.
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84.30.Vn Filters
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound

Production of intense deuteron beams

J. Golden and C. A. Kapetanakos

Appl. Phys. Lett. 28, 3 (1976); http://dx.doi.org/10.1063/1.88559 (2 pages) | Cited 17 times

Online Publication Date: 28 August 2008

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Results are reported on the production of 400‐keV 50‐nsec‐duration 1.3‐kA deuteron beams using a reflex triode.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.50.Gj Plasma heating by particle beams

Effect of GaAs electronic structure on the performance of the GaAs‐ (Cs,O) photoemitter

M. G. Burt and J. C. Inkson

Appl. Phys. Lett. 28, 5 (1976); http://dx.doi.org/10.1063/1.88572 (2 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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We have made a theoretical investigation of the emission process for the (111) A and B faces of GaAs activated to negative electron affinity taking into account the full Bloch nature of the wave function of the photoexcited electron. We find that, within the abrupt‐step model for the potential in the surface region, the emission probability is sensitive to the amount of band bending in the space‐charge region. We also find that, all other things being equal (magnitude of the negative electron affinity, amount of band bending, etc.), the emission probability for the B face is considerably higher than that for the A face.
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79.60.Jv Interfaces; heterostructures; nanostructures
73.20.-r Electron states at surfaces and interfaces

Boron‐implanted profiles in diamond

B. Blanchard, J. L. Combasson, and J. C. Bourgoin

Appl. Phys. Lett. 28, 7 (1976); http://dx.doi.org/10.1063/1.88573 (2 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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Boron ions with energy ranging from 40 to 250 kev have been implanted at room temperature in type‐IIa diamonds with doses of 1015 and 1016 cm−2. The boron profiles have been measured using an ion analyzer. These profiles are compared with profiles calculated using Winterbon’s theory. Reasonable agreement between experimental and theoretical profiles is obtained for the electronic stopping cross section measured by Omrod et al. up to about 180 keV.
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61.72.U- Doping and impurity implantation
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Distribution across the channel of defects induced by nitrogen bombardment in silicon

P. Baeri, S. U. Campisano, G. Ciavola, G. Foti, and E. Rimini

Appl. Phys. Lett. 28, 9 (1976); http://dx.doi.org/10.1063/1.88574 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Silicon crystals have been implanted at room temperature with 3.2×1015 ions/cm2 of 300‐keV N+. The spatial distribution of displaced atoms has been determined by the backscattering energy spectra as a function of the crystal tilting angle with respect to the 〈111〉 axis. The changes in the extracted depth profiles have been correlated to the nonuniform distribution of defects across the channel. The radial distribution of displaced atoms has been determined on the basis of the flux‐peaking treatment for impurity lattice location.
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61.72.U- Doping and impurity implantation
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Raman cross‐section determination by direct stimulated Raman gain measurements

B. E. Kincaid and J. R. Fontana

Appl. Phys. Lett. 28, 12 (1976); http://dx.doi.org/10.1063/1.88560 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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The stimulated Raman gain of the Q branch of the first vibrational transition of atmospheric N2 was measured with a nonfocused primary‐laser single‐pass amplifier configuration. The Raman signal which was amplified over a path of 8.53 m was provided by a near‐ir dye laser pumped by the ruby primary laser. The Raman cross section was determined from the measured gain.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Laser‐induced dissociation of ozone and resonance fluorescence of OH in ambient air

Charles C. Wang, L. I. Davis, C. H. Wu, and S. Japar

Appl. Phys. Lett. 28, 14 (1976); http://dx.doi.org/10.1063/1.88561 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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In the measurement of hydroxyl (OH) concentrations in air using the technique of resonance fluorescence, it was established that the presence of ambient ozone led to significant interference. It is concluded that this is a result of OH formation due to laser‐induced dissociation of ozone. A reduction in the power density of excitation was required to reduce this effect to a negligible level.
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91.50.-r Marine geology and geophysics
82.50.Hp Processes caused by visible and UV light

Effective glow discharge excitation of nitrogen lasers at gas pressures ranging from 0 to 5 bar

V. Hasson, H. M. von Bergmann, and D. Preussler

Appl. Phys. Lett. 28, 17 (1976); http://dx.doi.org/10.1063/1.88562 (2 pages) | Cited 28 times

Online Publication Date: 28 August 2008

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This paper applies a novel stabilization technique to the effective glow discharge excitation of uv nitrogen lasers at gas pressures ranging from 0 to 5 bar. The plasma is produced between uniform field electrodes and can be stabilized at electrode separations of down to 1 mm. The stabilization is relatively insensitive to the electrode geometry and surface finish. Megawatt pulses were obtained from a 25‐cm atmospheric‐pressure device energized by a simple flat‐plate Blumlein circuit.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona
32.80.Fb Photoionization of atoms and ions
32.80.Hd Auger effect (including Coster-Krönig transitions)

Continuous operation of 1.0‐μm‐wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx@qL double‐heterostructure injection lasers at room temperature

R. E. Nahory, M. A. Pollack, E. D. Beebe, J. C. DeWinter, and R. W. Dixon

Appl. Phys. Lett. 28, 19 (1976); http://dx.doi.org/10.1063/1.88563 (3 pages) | Cited 33 times

Online Publication Date: 28 August 2008

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Double‐heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx@qL injection lasers have been operated continuously at room temperature for the first time. Emission was near 1.0 μm. The lowest threshold current density observed was 2.1 kA  cm−2 dc.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
85.60.Jb Light-emitting devices
78.45.+h Stimulated emission
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

A kilovolt picosecond optoelectronic switch and Pockel’s cell

P. LeFur and D. H. Auston

Appl. Phys. Lett. 28, 21 (1976); http://dx.doi.org/10.1063/1.88565 (3 pages) | Cited 30 times

Online Publication Date: 28 August 2008

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Photoconductivity produced by picosecond optical pulses in silicon has been used to switch electrical signals as large as 1.5 kV. The signals have been used to drive a traveling‐wave Pockel’s cell for efficient optical switching with a measured rise time of approximately 25 psec.
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72.40.+w Photoconduction and photovoltaic effects
78.20.Jq Electro-optical effects

High‐efficiency KrF excimer laser

M. L. Bhaumik, R. S. Bradford, and E. R. Ault

Appl. Phys. Lett. 28, 23 (1976); http://dx.doi.org/10.1063/1.88566 (2 pages) | Cited 52 times

Online Publication Date: 28 August 2008

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Efficient high‐power laser emission has been observed at 249 nm from a KrF excimer laser obtained by an electron‐beam‐pumped mixture of Ar, Kr, and NF3 (1300:130:1) at a total pressure of 2.25 atm. An energy of 1.5 J was extracted in a 125‐nsec (FWHM) pulse from a 100‐cm3 volume, using a coaxial electron‐beam laser. Laser efficiency was estimated to be nearly 15% based on energy deposition in the gas. Over‐all electrical efficiency was ∼1%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Observation of a dynamical central peak in the light‐scattering spectrum of a glass

L. A. Firstein, J. M. Cherlow, and R. W. Hellwarth

Appl. Phys. Lett. 28, 25 (1976); http://dx.doi.org/10.1063/1.88567 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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We report the first observation of a dynamical central peak in the light‐scattering spectrum of a glass (Schott LaSF‐7). After an iodine‐vapor filter had removed the elastically scattered component, the spectrum of the light scattered by the glass still exhibited a component centered between the two Brillouin lines.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.40.Tv Optical and dielectric properties related to treatment conditions

Coherent anti‐Stokes Raman spectroscopy (CARS): Improved experimental design and observation of new higher‐order processes

Ilan Chabay, Gary K. Klauminzer, and Bruce S. Hudson

Appl. Phys. Lett. 28, 27 (1976); http://dx.doi.org/10.1063/1.88553 (3 pages) | Cited 58 times

Online Publication Date: 28 August 2008

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The development of the optical and electronic arrangement which has permitted the straightforward measurement of coherent anti‐Stokes Raman spectra (CARS) and of higher‐order processes not previously reported is described in this paper. The CARS spectrum of a dilute solution of diphenyloctatetraene in benzene is presented. This spectrum demonstrates the significantly greater signal‐to‐noise ratio possible with CARS as compared to conventional Raman techniques. Higher‐order Raman spectral excitation studies (HORSES) are described which indicate the presence of a six‐wave or a second‐order four‐wave mixing process.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
78.30.C- Liquids

GaAs MESFET prepared by molecular beam epitaxy (MBE)

A. Y. Cho and D. R. Ch’en

Appl. Phys. Lett. 28, 30 (1976); http://dx.doi.org/10.1063/1.88554 (2 pages) | Cited 17 times

Online Publication Date: 28 August 2008

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GaAs metal‐semiconductor field‐effect transistors (MESFET) have been prepared by molecular‐beam epitaxy. At 6 GHz a noise figure of 3 dB was obtained with a corresponding gain of 10 dB. The transconductance of the device was 28 mmhos and Fmax was approximately 35 GHz.
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85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology
81.10.Bk Growth from vapor

Heterojunction band discontinuities

J. L. Shay, Sigurd Wagner, and J. C. Phillips

Appl. Phys. Lett. 28, 31 (1976); http://dx.doi.org/10.1063/1.88555 (3 pages) | Cited 29 times

Online Publication Date: 28 August 2008

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The discontinuity ΔEc=0.56 eV in the conduction band edge at n‐CdS/p‐InP junctions is reported. This discontinuity and others are compared with photoemission data and with Van Vechten’s extension of these data to many tetrahedrally coordinated semiconductors. Agreement between measured discontinuities and theoretical predictions is very good. Predictions are made for band parameters pertinent to interfaces involving AIIBIVCV2 compounds with zinc blende, chalcopyrite, or wurtzite crystal structures.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.-r Electron states at surfaces and interfaces

Resonant tunneling through Schottky barriers

J. S. Helman and F. Sánchez Sinencio

Appl. Phys. Lett. 28, 34 (1976); http://dx.doi.org/10.1063/1.88556 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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The model of the Schottky barrier is based on the presence of ionized donors within the barrier. The empty energy levels corresponding to these donors lie in the barrier. Thus, there can be resonant tunneling through these empty energy levels. This is an inherent effect associated with Schottky barriers. We show how resonant tunneling depends on the ionization energy of the donors and the conditions under which resonant tunneling prevails over common tunneling.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Gk Tunneling
73.40.Ns Metal-nonmetal contacts

Efficient low‐voltage electroluminescent devices by tunnel injection of holes

M. D. Clark, S. Baidyaroy, F. Ryan, and J.M. Ballantyne

Appl. Phys. Lett. 28, 36 (1976); http://dx.doi.org/10.1063/1.88557 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Efficient tunnel injection of holes into n‐type semiconductors has been achieved with evaporated metal‐insulator structures on single‐crystal GaAs and CdS. Nearly ideal tunneling of holes is observed, with abrupt turn‐on of electroluminescence under dc applied voltage comparable to the semiconductor band gap, and internal quantum efficiency on the order of unity.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Smooth and coherent layers of GaAs and AlAs grown by molecular beam epitaxy

L. L. Chang, Armin Segmüller, and L. Esaki

Appl. Phys. Lett. 28, 39 (1976); http://dx.doi.org/10.1063/1.88558 (3 pages) | Cited 28 times

Online Publication Date: 28 August 2008

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Periodic ultrathin layers of GaAs and AlAs with a few periods have been grown by molecular beam epitaxy under computer control. For such structures, x‐ray scattering measurements at small angles show a series of principal and secondary interference peaks. The results are in good agreement with theoretical calculations, giving evidence to a degree of smoothness and coherency on the scale of atomic dimensions. Furthermore, the nonuniformity in thickness over a relatively large sample area is shown to be governed by the geometry of the growth system.
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68.55.-a Thin film structure and morphology
61.05.C- X-ray diffraction and scattering

Electro‐optical properties of amorphous As2Se5‐silicon heterojunctions

B. Alonso, J. Piqueras, and E. Muñoz

Appl. Phys. Lett. 28, 41 (1976); http://dx.doi.org/10.1063/1.88568 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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The properties of heterojunctions between As2Se5 amorphous films and monocrystalline silicon are studied. The As2Se5 films behave as a memory‐type switch, and the I‐V characteristics of the heterojunctions on n‐type Si are asymmetric but not clearly rectifying. Short‐circuit photocurrent has been investigated in detail, and a band model is presented.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids

Profile and groove‐depth control in GaAs diffraction gratings fabricated by preferential chemical etching in H2SO4‐H2O2‐H2O system

Won‐Tien Tsang and Shyh Wang

Appl. Phys. Lett. 28, 44 (1976); http://dx.doi.org/10.1063/1.88569 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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We studied in detail the fabrication of diffraction gratings in GaAs by preferential chemical etching and demonstrated that different grating profiles can be obtained by proper choice of substrate orientation and direction of grating‐mask groove openings or by controlling the width of these groove openings and/or etching time. We have also obtained experimental curves relating the etched groove depth to etching time for gratings with different periodicities at different etchant temperatures. In our experiments, the H2SO4‐H2O2‐H2O system was used as the preferential etchant together with Shipley AZ‐1350J as the resist. This combination enables us to use the resist grating directly as a protective mask during chemical etching.
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42.79.Dj Gratings
42.82.-m Integrated optics
81.65.Cf Surface cleaning, etching, patterning
81.65.Ps Polishing, grinding, surface finishing

Effects of hydrogen contamination on the localized states in amorphous silicon

A. K. Malhotra and G. W. Neudeck

Appl. Phys. Lett. 28, 47 (1976); http://dx.doi.org/10.1063/1.88570 (3 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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The effects of incorporating hydrogen into vacuum‐evaporated amorphous silicon films as measured by the field‐effect conductance change is reported. Analysis of the data indicates that the density of localized states near the Fermi level decreases from 1×1020/cm3 eV to 2.8×1019/cm3 eV as the partial pressure of hydrogen during vacuum evaporation is increased from 7×10−6 to 6×10−5 Torr, with all other sample preparation procedures fixed. Under the same conditions the resistivity increases as the partial pressure of hydrogen is increased.
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71.23.-k Electronic structure of disordered solids
71.55.Jv Disordered structures; amorphous and glassy solids
72.15.Cz Electrical and thermal conduction in amorphous and liquid metals and alloys
72.80.Ng Disordered solids

Detection of nuclear quadrupole resonance via induced longitudinal magnetization

Terrence Jach

Appl. Phys. Lett. 28, 49 (1976); http://dx.doi.org/10.1063/1.88571 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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The first measurement of pure nuclear quadrupole splitting energies by monitoring the induced longitudinal magnetic moment has been carried out on a crystal of sapphire at 4.2 °K. Adiabatic fast passage was used to invert the populations of levels split by the quadrupole interaction. A small magnetic field removed the degeneracy of the nuclear states, allowing measurement of the linewidth and spin‐lattice relaxation time. Unlike conventional techniques of adiabatic passage, this method, utilizing a SQUID magnetometer, allows determination of the widths of nuclear quadrupole lines without a sacrifice in signal level.
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76.60.Gv Quadrupole resonance
71.70.Jp Nuclear states and interactions
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