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1 Jun 1976

Volume 28, Issue 11, pp. 641-691


Surface acoustic wave image scanning using phase modulation

M. L. Scott and J. P. Rahn

Appl. Phys. Lett. 28, 641 (1976); http://dx.doi.org/10.1063/1.88606 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Optical image scanning utilizing the phase modulation of a surface acoustic wave in a separated medium configuration of silicon on lithium niobate has been experimentally demonstrated with two similar techniques. In on e technique the long‐lived silicon surface states are charged and the image is scanned by a short counterpropagating acoustic pulse. In the second technique the surface states are charged by a short acoustic pulse but the image is scanned by a short pulse of uniform optical illumination.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
72.50.+b Acoustoelectric effects
85.60.Gz Photodetectors (including infrared and CCD detectors)

Vacuum‐ultraviolet‐induced space charge in Al2O3 films

R. J. Powell

Appl. Phys. Lett. 28, 643 (1976); http://dx.doi.org/10.1063/1.88607 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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The spectral dependence of positive space charge induced in an Al‐Al2O3‐Si MOS structure shows a sharp threshold at 7.8±0.2 eV. This threshold is interpreted to be the onset of band‐to‐band transitions in Al2O3. The net space charge induced by 10.2‐eV radiation can be positive or negative depending on the bias polarity and magnitude. The voltage dependence is qualitatively explained by the competitive processes of electron‐hole pair generation and electron injection from the electrodes.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Low‐loss optical fibers prepared by plasma‐activated chemical vapor deposition (CVD)

P. Geittner, D. Küppers, and H. Lydtin

Appl. Phys. Lett. 28, 645 (1976); http://dx.doi.org/10.1063/1.88608 (2 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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A modified method for the preparation of low‐loss optical fibers by means of chemical vapor deposition (CVD) techniques has been developed. In this method, a nonisothermal plasma is used to stimulate the reactions. Deposition of oxides then occurs only heterogeneously on the substrate. Results obtained by this method show optical losses well below 10 dB/km—having a minimum of 1.4 dB/km at a wavelength of 1050 nm—and a pulse dispersion of 0.8 ns/km.
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42.81.-i Fiber optics
81.20.-n Methods of materials synthesis and materials processing

Up‐conversion and optical energy storage in CdS

Martin Schmidt and Percival B. Perry

Appl. Phys. Lett. 28, 647 (1976); http://dx.doi.org/10.1063/1.88609 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Impurity‐assisted red‐green conversion has been observed in CdS with excitation intensities less than 1 μW. After red illumination, energy is stored in the crystals for times in the order of hours. The stored energy is detectable as green emitted light by infrared excitation.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.55.-m Photoluminescence, properties and materials
42.40.Kw Holographic interferometry; other holographic techniques

Electronic states of KrF

Thom. H. Dunning and P. Jeffrey Hay

Appl. Phys. Lett. 28, 649 (1976); http://dx.doi.org/10.1063/1.88610 (3 pages) | Cited 63 times

Online Publication Date: 28 August 2008

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We report ab initio calculations on the electronic states of KrF arising from the Kr+F, Kr++F−, and Kr∗+F separated atom limits. We conclude, in agreement with earlier assignments, that the observed laser transition is C (1/2) ‐X (1/2) (5.15 eV calculated, 5.00 eV observed). The calculated lifetime of the C (1/2) state is 6.5 ns. The ionic 2Π state was found to lie close to the ionic 2Σ+ state.
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31.15.xw Valence bond calculations
31.50.Df Potential energy surfaces for excited electronic states
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.70.Ca Oscillator and band strengths, lifetimes, transition moments, and Franck-Condon factors

Phase‐matched second‐harmonic generation in solid thin films using modulation of the nonlinear susceptibilities

B. U. Chen, C. C. Ghizoni, and C. L. Tang

Appl. Phys. Lett. 28, 651 (1976); http://dx.doi.org/10.1063/1.88611 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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Phase‐matched second‐harmonic generation in solid thin films has been achieved by using gratings etched onto the surface of a nonlinear substrate to modulate the nonlinear susceptibility.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Characteristics of a linearly pumped laser oscillator‐amplifier at 496 μm

Fielding Brown, Peter D. Hislop, and Steven R. Kronheim

Appl. Phys. Lett. 28, 654 (1976); http://dx.doi.org/10.1063/1.88612 (3 pages)

Online Publication Date: 28 August 2008

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A linearly pumped methyl fluoride laser oscillator‐amplifier is described which yields a peak power of 30 kW in a linewidth <60 MHz. Linear pumping results in nearly complete saturation of the FIR transition and consequently in relatively high photon conversion efficiency, which in the present case is 70% of its maximum theoretical value at operating pressures of 2–3 Torr. The present result indicates that MW‐level peak power, such as required for plasma‐ion scattering experiments, may be achieved using less than 140 MW of CO2 laser pumping power (<14 J in 100 nsec) in an amplifier less than 2 m long.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Discharge pumping of the Br2∗ laser

J. J. Ewing, J. H. Jacob, J. A. Mangano, and H. A. Brown

Appl. Phys. Lett. 28, 656 (1976); http://dx.doi.org/10.1063/1.88613 (4 pages) | Cited 16 times

Online Publication Date: 28 August 2008

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Laser action on the E→B band of molecular bromine at 292 nm has been observed in an E‐beam‐controlled discharge. The laser mixture was 99.6% Ar and 0.4% Br2 at a pressure of 4 atm. The mean discharge current and voltage were 25 A/cm2 and 11 kV/cm, respectively. The high‐energy E‐beam current density was 1.5 A/cm2. The mechanisms for creating Br2∗ in a discharge are discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona
32.30.Jc Visible and ultraviolet spectra

High‐power narrow‐line pulsed 496‐μm laser

A. Semet and N. C. Luhmann

Appl. Phys. Lett. 28, 659 (1976); http://dx.doi.org/10.1063/1.88604 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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The design and operation of a pulsed high‐power narrow‐line CH3F oscillator‐amplifier laser system is described. The dielectric waveguide oscillator produces output in a single longitudinal mode with linewidth less than 40 MHz and sufficient power (∼11 kW) to saturate the far‐infrared emission transition at the amplifier input. Pumped by ∼8 J of CO2, the amplifier has produced up to 156 kW of narrow‐line 496‐μm output. The amplifier gain is found to be sensitively dependent upon the relative timing of the FIR oscillator and CO2 pump pulses.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

A compact 50‐J CO2 TEA laser with VUV preionization and the discharge mechanism

P. F. Browne and P. M. Webber

Appl. Phys. Lett. 28, 662 (1976); http://dx.doi.org/10.1063/1.88605 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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A design is reported for a compact and simply constructed CO2 TEA laser giving pulses of up to 50 J with 0.1‐μs duration from a discharge of dimensions 45×6×6 cm3. The gas is preionized by VUV irradiation from two lines of 34 series arcs to either side of the uniform field electrodes to which potentials of +50 kV and −50 kV are applied. The mechanism of preionization and the conditions for a uniform discharge are considered.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Mode properties of GaAs‐Ga1−xAlxAs heterostructure inverted‐ridge optical waveguides

Won‐Tien Tsang and Shyh Wang

Appl. Phys. Lett. 28, 665 (1976); http://dx.doi.org/10.1063/1.88614 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Clean mode excitation and transmission have been observed in inverted‐ridge waveguides fabricated by liquid‐phase epitaxy of Ga0.7Al0.3As‐GaAs structures over preferentially etched channels.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Critical currents in Nb3Sn fast‐neutron irradiated at 6 K

S. L. Colucci, H. Weinstock, and B. S. Brown

Appl. Phys. Lett. 28, 667 (1976); http://dx.doi.org/10.1063/1.88615 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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The short‐section critical current density jc of neutron‐irradiated Nb3Sn composite wires has been measured at 4.2 K in transverse magnetic fields up to 10 T. Irradiation was conducted at ∼6 K, and jc measurements were made after annealing to 77 K. A fluence of 4.8×1017 n/cm2 (E≳0.1 MeV) increased jc(H) (for H≳1.5 T) above high unirradiated values (about 1×106 A/cm2 at 4 T). The enhancement in jc increased with field, to 45% at 10 T. Samples irradiated to 1.1×1018 n/cm2 showed enhancements in jc a few percent less than samples given the lower dose. After annealing to 295 and 415 K, roughly half of the jc enhancement remained for H≳4 T. Changes in the defect structure caused by irradiation and subsequent annealing, and which are responsible for increased flux pinning, are discussed.
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74.25.Sv Critical currents
74.25.-q Properties of superconductors
52.55.Pi Fusion products effects (e.g., alpha-particles, etc.), fast particle effects

Double heterojunction PbS‐PbS1−xSex‐PbS laser diodes with cw operation up to 96 K

H. Preier, M. Bleicher, W. Riedel, and H. Maier

Appl. Phys. Lett. 28, 669 (1976); http://dx.doi.org/10.1063/1.88616 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Double heterojunction PbS‐PbS1−xSex‐PbS laser diodes have been fabricated by hot‐wall molecular beam epitaxy. The lasers had stripe geometry of 100‐μm width formed by MgF2 passivation. Structures for electron and hole injection, respectively, are compared. Devices with 1‐μm‐thick active layers showed threshold current densities of about 400 A/cm2 at 77 K and 1.4×104 A/cm2 at 190 K. cw operation could be realized up to 96 K.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Amorphous silicon solar cell

D. E. Carlson and C. R. Wronski

Appl. Phys. Lett. 28, 671 (1976); http://dx.doi.org/10.1063/1.88617 (3 pages) | Cited 304 times

Online Publication Date: 28 August 2008

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Thin film solar cells, ∼1 μm thick, have been fabricated from amorphous silicon deposited from a glow discharge in silane. The cells were made in a p‐i‐n structure by using doping gases in the discharge. The best power conversion efficiency to date is 2.4% in AM‐1 sunlight. The maximum efficiency of thin‐film amorphous silicon solar cells is estimated to be ∼14–15%.
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84.60.Jt Photoelectric conversion
68.55.-a Thin film structure and morphology

Capacitance and R‐C time constant of a nearly pinched‐off semiconducting channel in the high‐frequency regime

Kurt Lehovec and Nasser Zamani

Appl. Phys. Lett. 28, 673 (1976); http://dx.doi.org/10.1063/1.88618 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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The gate capacitance of a nearly pinched‐off semiconducting channel located between gate and substrate depletion layers is derived for the high‐frequency regime in which the substrate charge does not change with ac channel charge. The distance corresponding to the inverse gate capacitance exceeds the gate depletion layer width, and the R‐C time constant per unit channel length approaches the inverse of the product of channel carrier mobility and voltage equivalent of temperature. Ordinary C‐V analysis at high frequency provides an artifactitious impurity profile which is fairly independent of the doping concentration and of the substrate and which varies in proportion to absolute temperature. Reconstruction of the true impurity profile from this artifactitious profile is discussed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Tv Field effect devices
72.30.+q High-frequency effects; plasma effects

LaF3 infrared detector

A. Sher, C. L. Fales, and J. F. Stubblefield

Appl. Phys. Lett. 28, 676 (1976); http://dx.doi.org/10.1063/1.88619 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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A new class of infrared detectors is proposed and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage is calculated from the measured resistance. At a modulation frequency of 20 Hz the estimated detectivity is ∼2×106 cm Hz1/2 W−1. For the parameters characterizing this device, the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity of ∼109 cm Hz1/2 W−1 for much thinner devices than the prototypes.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.70.+m Noise processes and phenomena

Properties of the interface charge inhomogeneities in the thermally grown Si‐SiO2 structure

K. Ziegler and E. Klausmann

Appl. Phys. Lett. 28, 678 (1976); http://dx.doi.org/10.1063/1.88620 (4 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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Measurements of the standard deviation σs of the surface potential fluctuations in MOS structures were performed by the conductance technique of Nicollian and Goetzberger for different temperatures and surface potentials. The values of σs were compared with the three‐dimensional mathematical model suggested by Brews and the quasiuniform model of the surface potential fluctuations generated by interface charge inhomogeneities. Good agreement was obtained with the model of Brews. We conclude that the interface charges are not agglomerated in the form of charge islands but are more or less evenly distributed. For the lower limit of the minimum wavelength of the interface charge inhomogeneities, we obtain a value of 75 Å. The upper limit of 100 Å as assumed by Brews seems to be reasonable. Negative interface charges are either absent or at most present at a low level.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Grating‐coupled GaAs single heterostructure ring laser

D. R. Scifres, R. D. Burnham, and W. Streifer

Appl. Phys. Lett. 28, 681 (1976); http://dx.doi.org/10.1063/1.88621 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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We report pulsed operation of an electrically pumped GaAs single heterostructure ring laser at 77 °K. Guided modes within the laser are totally internally reflected at cleaved facets and output beams are obtained by coupling from an integrated grating. Thresholds as low as 700 A/cm2 have been obtained and highly polarized highly collimated beams (1°×7° divergence) with a total output power of 70 mW have been observed.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.82.-m Integrated optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Statistical characterization of the lifetimes of continuously operated (Al,Ga)As double‐heterostructure lasers

W. B. Joyce, R. W. Dixon, and R. L. Hartman

Appl. Phys. Lett. 28, 684 (1976); http://dx.doi.org/10.1063/1.88622 (3 pages) | Cited 30 times

Online Publication Date: 28 August 2008

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The statistical distribution of lifetimes of routinely grown and fabricated continuously operated (Al,Ga)As double‐heterostructure lasers is presented and discussed. The 90 typical devices studied were operated as lasers in a dry‐nitrogen elevated‐temperature ambient (70 °C) until failure. The resulting median life, τm=750 h, and mean life, 〈τ〉=1370 h, extrapolate to τm=5.7 years and 〈τ〉=10.5 years at room temperature (22 °C) using a 0.7‐eV activation energy. The observed lifetimes are consistent with a model in which 17% of the lasers die prematurely as infant mortalities while 83% die by a mechanism well characterized by a lognormal distribution. The value of the standard deviation (σ=1.1) in lnτ is typical of other semiconductor devices.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.70.-q Methods of materials testing and analysis
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Palladium/cadmium‐sulfide Schottky diodes for hydrogen detection

Martin C. Steele and Bernard A. MacIver

Appl. Phys. Lett. 28, 687 (1976); http://dx.doi.org/10.1063/1.88623 (2 pages) | Cited 32 times

Online Publication Date: 28 August 2008

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The barrier height of a Pd‐CdS Schottky diode is reported to decrease markedly when exposed to hydrogen. This effect is believed to be due to the decrease in Pd work function. It makes a good simple hydrogen detector (even at 298 °K) over the range 500–5000 ppm H2.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.-z Semiconductor devices

Fast‐triton detector for laser fusion

H. Brysk and F. J. Mayer

Appl. Phys. Lett. 28, 688 (1976); http://dx.doi.org/10.1063/1.88624 (3 pages)

Online Publication Date: 28 August 2008

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A triton time‐of‐flight detector consisted of a CD2 foil in front of a shielded scintillator‐photomultiplier. In neutron‐generating laser‐fusion experiments with DT gas inside glass microspheres, no substantial number of tritons occurred in the velocity range corresponding to the observed ’’fast’’ (glass) ions. Streaming can be excluded as the primary mechanism for neutron production.
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52.70.Nc Particle measurements
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
29.40.-n Radiation detectors
28.52.-s Fusion reactors
FREE

Erratum: Determination of optical fiber refractive index profiles by a near‐field scanning technique

F. M. E. Sladen, D. N. Payne, and M. J. Adams

Appl. Phys. Lett. 28, 691 (1976); http://dx.doi.org/10.1063/1.88857 (1 page)

Online Publication Date: 28 August 2008

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Abstract Unavailable
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43.10.Vx Errata
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
84.40.Ba Antennas: theory, components and accessories
42.81.-i Fiber optics
FREE

Erratum: High‐power visible laser action in neutral atomic fluorine

Irving J. Bigio and R. F. Begley

Appl. Phys. Lett. 28, 691 (1976); http://dx.doi.org/10.1063/1.88858 (1 page)

Online Publication Date: 28 August 2008

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Abstract Unavailable
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43.10.Vx Errata
42.55.Lt Gas lasers including excimer and metal-vapor lasers
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