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15 Jan 1976

Volume 28, Issue 2, pp. 71-107


Piezoelectric surface wave scattering on a semi‐infinite short‐circuited surface

E. Cambiaggio, F. Cuozzo, and E. Rivier

Appl. Phys. Lett. 28, 71 (1976); http://dx.doi.org/10.1063/1.88659 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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The scattering of a surface acoustic wave reaching a metallized surface region of a piezoelectric crystal is investigated by a numerical finite‐difference method. The perturbation of the electric potential in the discontinuity neighborhood is shown, and the surface wave reflection is determined.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
77.65.-j Piezoelectricity and electromechanical effects

Ion‐implanted acoustic‐surface‐wave resonator

P. Hartemann

Appl. Phys. Lett. 28, 73 (1976); http://dx.doi.org/10.1063/1.88660 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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An acoustic‐surface‐wave resonator using a single periodic grating is described. A 633‐line grating was obtained by ion implantation in quartz (Y,X) with a reflection coefficient larger than 99% at about 125 MHz. An interdigital transducer deposited in the middle of this grating was found to have an input impedance that depended upon the acoustic characteristics of the array. A peak impedance was obtained as a result of the buildup of resonance in the grating and was used to stabilize the frequency of the conventional L‐C oscillator. In this case, the temperature stability of the oscillator is equal to that of the quartz substrate, that is, 22×10−6/deg.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

TE‐TM mode conversion by interaction between elastic surface waves and a laser beam on a metal‐diffused optical waveguide

Kazuhiko Yamanouchi, Kanji Higuchi, and Kimio Shibayama

Appl. Phys. Lett. 28, 75 (1976); http://dx.doi.org/10.1063/1.88661 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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TEm‐TMn mode conversion by electro‐optic and acousto‐optic effects in a metal‐diffused optical waveguide is described theoretically. Elastic surface waves and laser beams propagate along the X axis on Y‐cut LiNbO3 single crystals, i.e., interactions are collinear. We predict completely the TE1‐TM1 mode conversion at an elastic surface wave power of 33 mW along an interaction length of 5 mm with a width of 1 mm.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.20.Jq Electro-optical effects
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Gn Optical waveguides and couplers

Phonon‐induced planar voltages in thin metallic films

R. J. von Gutfeld, E. E. Tynan, and H. F. Budd

Appl. Phys. Lett. 28, 78 (1976); http://dx.doi.org/10.1063/1.88662 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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We have irradiated slant‐angle‐deposited metallic films on sapphire substrates with pulses of incoherent phonons and observed voltages in the plane of the sample. These voltages are very similar in character to those previously observed using laser irradiation as the excitation source. The new data prove unequivocally that these as well as our previously observed voltages in metal films are purely thermal in origin, consistent with a thermoelectric model.
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72.15.Jf Thermoelectric and thermomagnetic effects
73.61.At Metal and metallic alloys
63.90.+t Other topics in lattice dynamics (restricted to new topics in section 63)

Experiments on 558‐nm argon oxide laser system

William M. Hughes, N. Thomas Olson, and R. Hunter

Appl. Phys. Lett. 28, 81 (1976); http://dx.doi.org/10.1063/1.88647 (3 pages) | Cited 17 times

Online Publication Date: 28 August 2008

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Vacuum ultraviolet (VUV) photolysis of N2O immersed in high‐pressure Ar has been used to produce O(1S0) at high density. A two‐chamber apparatus was used to prevent the effects of electron and ion collision in the experimental volume, thereby providing a much clearer kinetic situation. The gain profile and stimulated emission cross section near 558 nm and the upper‐state lifetime were determined for ArO.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Jc Visible and ultraviolet spectra
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates

uv TEA laser with 760‐Torr N2

Ernest E. Bergmann

Appl. Phys. Lett. 28, 84 (1976); http://dx.doi.org/10.1063/1.88648 (2 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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A simple reliable transversely excited atmospheric (TEA) laser operating with moderate repetition rates at 337 nm using commercial‐grade N2 at 1 atm is described. Preliminary results for a range of operating voltages and channel spacings are presented. The laser’s pulse width is about 1 nsec. Best electrical efficiency to date is 0.039% at 8.8 kV. At 21 kV, 355 μJ/pulse is obtained. Above 16.7 kV, the unfocused output will pump a dye solution to superradiance at a distance of 1.5 m. For supply voltages less than 10 kV, a novel configuration for preionization is described.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Sm Magnetoactive discharges (e.g., Penning discharges)

Xenon fluoride laser excitation by transverse electric discharge

R. Burnham, N. W. Harris, and N. Djeu

Appl. Phys. Lett. 28, 86 (1976); http://dx.doi.org/10.1063/1.88649 (2 pages) | Cited 55 times

Online Publication Date: 28 August 2008

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Stimulated emission has been produced in mixtures of He, NF3, and Xe at total pressures between 300 and 1000 Torr. Laser emission was on lines at 3511 and 3531 Å which have been associated with the excited XeF molecule. Excitation of the gas mixture was by a transverse electric discharge which produced pulses with peak currents of approximately 104 A and rise times of 20 ns. A maximum laser energy of 7 mJ was obtained from a gas mixture with a ratio of He:Xe:NF3 of 98.0:1.5:0.5 at a total pressure of 300 Torr.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Three‐dimensional pictorial transmission in optical fibers

Amnon Yariv

Appl. Phys. Lett. 28, 88 (1976); http://dx.doi.org/10.1063/1.88650 (2 pages) | Cited 46 times

Online Publication Date: 28 August 2008

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Modal phase dispersion limits image transmission in optical fibers to distances too short to be of general interest. A technique based on nonlinear optical mixing is described for modal phase equalization and recovery of a transmitted image.
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42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics
42.79.Vb Optical storage systems, optical disks
42.65.-k Nonlinear optics

Observation of first Stokes, second Stokes, and anti‐Stokes radiation from a mercury cadmium telluride spin‐flip Raman laser

Paul W. Kruse

Appl. Phys. Lett. 28, 90 (1976); http://dx.doi.org/10.1063/1.88651 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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Single‐crystal Hg0.77Cd0.23Te has been employed in a spin‐flip Raman laser to generate first Stokes and anti‐Stokes radiation when pumped at 10.60 μm, and first Stokes, second Stokes, and anti‐Stokes radiation when pumped at 10.28 μm.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Cerenkov radiation as a light source for the 2000–620‐Å spectral range

M. A. Piestrup, R. A. Powell, G. B. Rothbart, C. K. Chen, and R. H. Pantell

Appl. Phys. Lett. 28, 92 (1976); http://dx.doi.org/10.1063/1.88652 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Spectral power density from Cerenkov radiation was measured in the vacuum ultraviolet from 2000 to 620 Å. The radiation was produced by passing a 500‐MeV 1‐mA‐peak‐current electron beam through 1.4 m of 1 atm of helium gas at room temperature. In the photon energy range from 6 to 20 eV, approximately 1014 photons /sec/Å/mA of electron‐beam current were emitted, and our detection apparatus attenuated the radiation by 4–5 orders of magnitude.
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42.72.-g Optical sources and standards
07.60.Rd Visible and ultraviolet spectrometers

Dynamics of coloration of amorphous electrochromic films of WO3 at low voltages

Richard S. Crandall and Brian W. Faughnan

Appl. Phys. Lett. 28, 95 (1976); http://dx.doi.org/10.1063/1.88653 (3 pages) | Cited 51 times

Online Publication Date: 28 August 2008

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Measurements of the time dependence of the coloration (formation of HxWO3) of amorphous films of WO3 are described and analyzed in terms of a barrier for current flow at the WO3‐electrolyte interface. A novel feature is that as coloration proceeds, the chemical potential of hydrogen in the HxWO3 increases, opposing further coloration.
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61.72.jn Color centers
82.45.-h Electrochemistry and electrophoresis
73.61.Ng Insulators
82.47.-a Applied electrochemistry

Effects of interfacial oxide layers on the performance of silicon Schottky‐barrier solar cells

D. R. Lillington and W. G. Townsend

Appl. Phys. Lett. 28, 97 (1976); http://dx.doi.org/10.1063/1.88654 (2 pages) | Cited 46 times

Online Publication Date: 28 August 2008

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Measurements have been made of the electrical and optical properties of Au–n‐type silicon Schottky‐barrier solar cells (SBSC) in which the metal and semiconductor are separated by a thin interfacial oxide layer ∼10–23 Å thick. Measurements of the V‐I characteristics showed that the value of Voc is increased by up to 38% and the maximum conversion efficiency by as much as 35% when compared with cells having no grown oxide layer.
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84.60.Jt Photoelectric conversion
73.30.+y Surface double layers, Schottky barriers, and work functions

X‐ray topographic observation of dark‐line defects in GaAs‐Ga1−xAlxAs double‐heterostructure wafers

Seigô Kishino, Hisao Nakashima, Naoki Chinone, and Ryoichi Ito

Appl. Phys. Lett. 28, 98 (1976); http://dx.doi.org/10.1063/1.88655 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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Optically induced dark‐line defects (DLD’s) in GaAs‐Ga1−xAlxAs double‐heterostructure (DH) wafers have been observed by x‐ray topography for the first time using the x‐ray anomalous transmission effect. This topography, which is sensitive to defects in the thin epitaxial layers, has been successfully applied to the observation. As a result, it has been observed that DLD’s oriented along 〈110〉 directions are composed of dislocations with Burgers vectors of (1/2) a 〈110〉 parallel to the growth surface. It is also shown that the DLD’s originate from both substrate dislocations and crystal edges.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
61.72.Lk Linear defects: dislocations, disclinations
61.05.C- X-ray diffraction and scattering
68.55.-a Thin film structure and morphology

Field‐effect modulation of detectivity in PbS photoconductors

Gordon Kramer and Michael A. Levine

Appl. Phys. Lett. 28, 101 (1976); http://dx.doi.org/10.1063/1.88656 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Results obtained with lead sulfide photoconductive insulated‐gate field‐effect transistors (photo‐IGFET’s) are presented. Detectivity modulation is provided by the gate electrode. The n‐type PbS film was depleted of carriers by applying a negative gate potential, and the detectivity was increased by a factor of 200 while the noise remained constant. Detectivities of 2×1010 cm Hz1/2/W were obtained at 173 °K and 500 Hz for a 180° field of view and a 300 °K background. The devices exhibited stable operating characteristics and showed no significant performance change after 18 months under ambient laboratory conditions. They were fabricated entirely by vacuum deposition in a single pumpdown, and the various conducting, insulating, and semiconducting films were deposited successively through accurately registered metal shadow masks.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Tv Field effect devices

Enhancement of emission intensity in indirect‐gap AlxGa1−xAs (x=0.53) by nitrogen‐ion implantation

Yunosuke Makita, Shun‐ichi Gonda, Hachiro Ijuin, Toshio Tsurushima, Hisao Tanoue, and Shigeru Maekawa

Appl. Phys. Lett. 28, 103 (1976); http://dx.doi.org/10.1063/1.88657 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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Nitrogen ions were implanted into indirect‐gap AlxGa1−xAs (x=0.53) and photoluminescence measurements were made at 2 °K as a function of annealing temperature. After sufficient annealing three emission bands were observed presumably due to the substitution of the nitrogen atoms with the host As atoms and the integrated intensity of the luminescence of the wafer increased by about 200 times compared with that of the unimplanted and annealed wafer. This can probably be ascribed to the formation of isoelectronic traps in the AlxGa1−xAs : N system.
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78.55.-m Photoluminescence, properties and materials
78.40.Fy Semiconductors

Amorphous silicon p‐n junction

W. E. Spear, P. G. Le Comber, S. Kinmond, and M. H. Brodsky

Appl. Phys. Lett. 28, 105 (1976); http://dx.doi.org/10.1063/1.88658 (3 pages) | Cited 66 times

Online Publication Date: 28 August 2008

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The preparation of an all‐amorphous thin‐film p‐n junction is described. The a‐Si films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities. The current‐voltage characteristics of the junction were investigated in the range from 150 to 300 K.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
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