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1 Feb 1976

Volume 28, Issue 3, pp. 109-168


Convolution using guided acousto‐optical interaction in As2S3 waveguides

K. W. Loh, W. S. C. Chang, and R. A. Becker

Appl. Phys. Lett. 28, 109 (1976); http://dx.doi.org/10.1063/1.88672 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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Convolution of two acoustic surface waves (ASW) has been obtained by the acousto‐optical diffraction of an optical wave in an As2S3 waveguide. A simple theory is presented to show the convolution process. Experimentally, very high acousto‐optical diffraction efficiency (93% at 3 mW of acoustic power) has been observed in the As2S3 waveguide. A triangular pulse was observed on the oscilloscope through an optical heterodyne detector when two rectangular ASW pulses were convolved with each other.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Guided acoustic‐surface‐wave filters

H. F. Tiersten and R. C. Smythe

Appl. Phys. Lett. 28, 111 (1976); http://dx.doi.org/10.1063/1.88673 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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A number of filter structures utilizing acoustic surface waveguides and periodic arrays of reflecting strips to form multimoded resonant configurations are described. The devices described are analogous to the monolithic crystal filter in that an array of acoustically coupled resonators is obtained from a structure placed on a single substrate. The coupling between resonators is described in terms of trapped energy modes of the surface‐waveguiding structures.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
77.65.-j Piezoelectricity and electromechanical effects
43.60.+d Acoustic signal processing
84.40.Az Waveguides, transmission lines, striplines

GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy

M. Allenson and S. J. Bass

Appl. Phys. Lett. 28, 113 (1976); http://dx.doi.org/10.1063/1.88674 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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GaAs reflection photocathodes grown by vapor‐phase epitaxy using trimethyl gallium and arsine have been activated to a maximum sensitivity of 1150 μA 1m−1. The material is of high quality and has diffusion lengths and surface escape probabilities which are comparable with those measured for liquid‐phase epitaxial material.
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81.10.Bk Growth from vapor
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.55.-a Thin film structure and morphology

Measurement of intense magnetic fields associated with laser−produced plasmas

R. Serov and M. C. Richardson

Appl. Phys. Lett. 28, 115 (1976); http://dx.doi.org/10.1063/1.88675 (4 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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Measurements have been made with subnanosecond resolution of the azimuthal magnetic field spontaneously associated with plasmas produced by high‐intensity (1012–1014 W/cm2) 1‐nsec‐duration CO2 laser pulses. In addition to a distinct dependence on background argon gas pressure, it is found that the magnetic field displays a 1/r2 radial dependence, and its onset is synchronous with the initial formation of the plasma.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Ds Electric and magnetic measurements

Observation of level anticrossing in nonlinear absorption

Jun Sakai and Mikio Katayama

Appl. Phys. Lett. 28, 119 (1976); http://dx.doi.org/10.1063/1.88676 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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Stark‐tuned level anticrossing between hyperfine levels was observed in the nonlinear absorption of the CD3I ν2 QP (4,1) transition by using the CO2 laser line. Good agreement between the theoretical and the observed linewidth was obtained.
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32.80.Xx Level crossing and optical pumping
33.15.Kr Electric and magnetic moments (and derivatives), polarizability, and magnetic susceptibility

Self‐trapping of a laser beam in a cylindrical plasma column

M. D. Feit and J. A. Fleck

Appl. Phys. Lett. 28, 121 (1976); http://dx.doi.org/10.1063/1.88684 (4 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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The laser heating of an initially uniform plasma column has been modeled in a self‐consistent way, including the effects of medium magnetohydrodynamics and refraction and diffraction of the laser light. The results show that a portion of the pulse can become trapped, leading to a pattern of alternate focusing and defocusing of the beam.
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52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

GHz tuning of a planar dye laser with single dispersive element

P. Burlamacchi and R. Pratesi

Appl. Phys. Lett. 28, 124 (1976); http://dx.doi.org/10.1063/1.88685 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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A new scheme for tuning a planar waveguide dye laser is presented. Because of the high gain produced in the waveguide structure, a high‐dispersion slit‐grating arrangement can be used as a feedback element of the laser. Output energy of a few tens of mJ, which corresponded to the saturated output of the amplifier, was obtained within a 2‐GHz bandwidth. A very stable and repeatable output frequency was observed. The device demonstrates that, as long as the waveguide overcomes gain and refractive index inhomogeneities, a much higher energy output can be expected from scaled‐up devices.
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42.55.Mv Dye lasers

Taper coupling between 7059‐glass and CdS films and phase modulation in the composite waveguide structure

J. A. McMurray and C. R. Stanley

Appl. Phys. Lett. 28, 126 (1976); http://dx.doi.org/10.1063/1.88686 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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Coupling between planar 7059‐glass and CdS optical waveguides has been demonstrated. The CdS–7059‐glass films form part of a multilayer electro‐optic phase modulator, the first such device to be reported which uses polycrystalline films evaporated on to amorphous substrates. The behavior of the modulator structure is completely accounted for when dielectric relaxation effects in CdS films are considered.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Free‐exciton radiation from p‐i‐n diodes of GaP doped with indium and oxygen

Akira Tanaka, Tokuzo Sukegawa, Tadanobu Nikaido, and Minoru Hagino

Appl. Phys. Lett. 28, 129 (1976); http://dx.doi.org/10.1063/1.88687 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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GaP diodes containing indium and oxygen emitted intense green light (2.23 eV) with weak red light (1.77 eV) at room temperature. The green light emission was enhanced by In and the spectral measurements revealed the green light to be due to the simultaneous annihilation of a free exciton and a LA phonon. The diode had a p‐i‐n structure, and the green light was emitted from the intrinsic region which was formed by oxygen deep donors. At appropriate oxygen concentrations, diodes which emit only green light were fabricated successfully.
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85.60.Jb Light-emitting devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Kk Junction diodes

Experimental evidence of laser‐induced separations in bulk gas mixtures

Edgar A. Rinehart, Jeffery H. Richardson, David C. Johnson, and Lawrence W. Hrubesh

Appl. Phys. Lett. 28, 131 (1976); http://dx.doi.org/10.1063/1.88663 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Radiation from a cw CO2 laser is used to separate SF6 molecules from helium molecules in a bulk mixture of each, by resonant radiation pressure. These experimental results demonstrate that selective absorption of radiation can cause physical separations of molecules within a diffusion‐limited geometry.
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42.62.-b Laser applications
51.70.+f Optical and dielectric properties
28.60.+s Isotope separation and enrichment

dc‐excited and sealed‐off operation of the optically pumped 546.1‐nm Hg laser

Max Artusy, Neil Holmes, and A. E. Siegman

Appl. Phys. Lett. 28, 133 (1976); http://dx.doi.org/10.1063/1.88664 (2 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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The optically pumped Hg laser at 546.1 nm, first developed by Djeu and Burnham, has now been operated as a sealed‐off rather than continuously flowing system, and with dc‐excited rather than rf‐excited pump lamps in both elliptically focused and close‐wrapped configurations. Laser power outputs of ∼1 mW cw have been obtained with ∼100 W excitation into two commercial Hg germicidal lamps, and a power output of ≳3 mW has been obtained from a sealed‐off tube with ∼300 W into a single low‐pressure ’’Toronto arc’’ pump lamp. Sealed‐off operation appears to be stable and long lived, and substantial further performance improvements are expected.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.-r Atomic spectra

Optical backward parametric fluorescence in sodium nitrite

D. S. Chemla and E. Batifol

Appl. Phys. Lett. 28, 135 (1976); http://dx.doi.org/10.1063/1.88665 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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We present the first observation of optical backward‐traveling‐wave (BTW) parametric fluorescence, in a sodium nitrite crystal pumped by a coumarin dye laser. Several aspects of BTW parametric interactions are discussed. This experiment provides a feasibility test of optical BTW parametric oscillators.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
78.20.-e Optical properties of bulk materials and thin films

cw CO‐CS2, CO‐C2H2, and CO‐N2O energy‐transfer lasers

J. A. Stregack, B. L. Wexler, and G. A. Hart

Appl. Phys. Lett. 28, 137 (1976); http://dx.doi.org/10.1063/1.88666 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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cw laser emission has been observed from CS2 (11.5 μ), C2H2 (8 μ), and N2O (10.6 μ) transitions pumped by energy transfer from vibrationally excited CO in an electric discharge gas‐dynamic laser device. Proposed energy‐transfer pathways for these three lasers are described. Supersonic expansion cooling plays a critical role in depopulating the lower laser levels in the CO‐CS2 and CO‐C2H2 systems. Maximum output powers measured for each of these systems are presented. The dependence of output power on the flow rate of the injected laser species is discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Ez Rotational and vibrational energy transfer
34.80.Gs Molecular excitation and ionization

Elastically enhanced nonradiative recombination at AlxGa1−xAs‐GaAs heterointerface

W. D. Johnston and R. A. Logan

Appl. Phys. Lett. 28, 140 (1976); http://dx.doi.org/10.1063/1.88667 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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In the presence of an elastic strain gradient of order 10−5 μm−1, the nonradiative recombination rate at an (LPE) AlxGa1−xAs‐GaAs heterointerface is observed to increase, reversibly, by as much as 100‐fold.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.-b Other luminescence and radiative recombination

Deep donor state of cobalt in silicon

David C. Wong and Claude M. Penchina

Appl. Phys. Lett. 28, 142 (1976); http://dx.doi.org/10.1063/1.88668 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Photoconductivity measurements on p‐type and n‐type silicon doped with cobalt show that the deep cobalt donor level is fixed in energy 0.384±0.005 eV above the valence band, while the band gap of silicon varies with temperature. This result is consistent with (but much more precise than) measurements of the temperature dependence of resistivity and Hall effect; it contrasts with the behavior of the gold donor level which has been reported to be fixed in energy relative to the conduction band. Combining the present results with previously reported measurements of the thermal rate of hole emission, we obtain the first estimate of the temperature dependence of the cross section for capture of holes by neutral cobalt donors: σp0∼Tm, where m=−2.5±0.4.
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78.40.Fy Semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.80.Cw Elemental semiconductors

New application of Se‐Ge glasses to silicon microfabrication technology

Haruo Nagai, Akira Yoshikawa, Yoshio Toyoshima, Osamu Ochi, and Yoshihiko Mizushima

Appl. Phys. Lett. 28, 145 (1976); http://dx.doi.org/10.1063/1.88669 (3 pages) | Cited 30 times

Online Publication Date: 28 August 2008

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A selective etching effect due to photoexposure of Se‐Ge glass films was found. The possibilities of applying this phenomenon to the patterning of layers for silicon device processing and for the fabrication of photomasks were investigated. The results showed that the Se‐Ge glass has certain advantages in these applications.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.40.Tv Optical and dielectric properties related to treatment conditions
81.65.Cf Surface cleaning, etching, patterning
81.65.Ps Polishing, grinding, surface finishing

Antimony doping of Si layers grown by solid‐phase epitaxy

S. S. Lau, C. Canali, Z. L. Liau, K. Nakamura, M.‐A. Nicolet, J. W. Mayer, Richard J. Blattner, and C. A. Evans

Appl. Phys. Lett. 28, 148 (1976); http://dx.doi.org/10.1063/1.88670 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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We report here that layers of Si formed by solid‐phase epitaxial growth (SPEG) can be doped intentionally. The sample consists initially of an upper layer of amorphous Si (∼1 μm thick), a very thin intermediate layer of Sb (nominally 5 Å), and a thin lower layer of Pd (∼500 Å), all electron‐gun deposited on top of a single‐crystal substrate (1–10 Ω cm, p type, 〈100〉 orientation). After a heating cycle which induces epitaxial growth, electrically active Sb atoms are incorporated into the SPEG layer, as shown by the following facts: (a) the SPEG layer forms a p‐n junction against the p‐type substrate, (b) the Hall effect indicates strong n‐type conduction of the layer, and (c) Auger electron spectra reveal the presence of Sb in the layer.
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation

High‐performance solar cell material: n‐AlAs/p‐GaAs prepared by vapor phase epitaxy

W. D. Johnston and W. M. Callahan

Appl. Phys. Lett. 28, 150 (1976); http://dx.doi.org/10.1063/1.88671 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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Solar cells with measured sea level sunlight power conversion efficiencies of 13–18% and areas of several cm2 have been prepared by vapor phase epitaxial growth of n‐AlAs on p‐GaAs substrates. The cells are provided with an antireflective passivating anodically grown coating and have much improved stability in the laboratory atmosphere.
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84.60.Jt Photoelectric conversion
81.10.Bk Growth from vapor
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Aging effects in Si‐doped Al Schottky barrier diodes

T. M. Reith

Appl. Phys. Lett. 28, 152 (1976); http://dx.doi.org/10.1063/1.88677 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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Schottky barrier diodes made with Si‐doped Al metallization on n‐type Si exhibit aging at temperatures between 200 and 300 °C. The barrier height of these devices depends on the square root of time. A crystallized layer of Si on the devices, grown from the Al‐Si metal, contains a certain amount of Al, which acts as a p‐type dopant. The aging of the diodes is a direct result of variations in the amount of this Al, about which information can therefore be inferred from the kinetics of the aging process. The results are compared to those for pure Al Schottky contacts to Si, which do not age with time at these temperatures.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential

Cd‐diffused Pb1−xSnxTe lasers with high output power

Wayne Lo

Appl. Phys. Lett. 28, 154 (1976); http://dx.doi.org/10.1063/1.88678 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Cd‐diffused Pb1−xSnxTe (x∼0.13) diode lasers have been fabricated with cw output powers of 1.25 mW (single mode) and 2.4 mW (total) at 10.6 μm. These power levels are attributed to the low‐temperature Cd diffusion, a new method of growing low‐dislocation‐density crystals, and to a contact resistance as low as 3×10−5 Ω cm2. Multimode emission spectra are common for cw operation, but reducing the cavity width encourages single‐mode emission, indicating the filamentary nature of modes in these devices.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
66.30.J- Diffusion of impurities
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Epitaxial solar cells on silicon EFG ’’ribbon’’ substrates

H. Kressel, R. V. D’Aiello, and P. H. Robinson

Appl. Phys. Lett. 28, 157 (1976); http://dx.doi.org/10.1063/1.88679 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Epitaxial solar cell structures grown on polycrystalline silicon ’’ribbon’’ substrates (prepared by the edge‐defined‐growth process) are compared to devices made by direct diffusion into similar material. Efficiency values of 10% (AM‐1) have been achieved by the epitaxial structures, which are substantially higher than achieved by diffusion. The improvement is shown to result mainly from the lower saturation current density of the epitaxial junctions.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
68.55.-a Thin film structure and morphology

The super‐Schottky diode microwave mixer

M. McColl, R. J. Pedersen, M. F. Bottjer, M. F. Millea, A. H. Silver, and F. L. Vernon

Appl. Phys. Lett. 28, 159 (1976); http://dx.doi.org/10.1063/1.88680 (4 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Superconductor‐semiconductor (super‐Schottky) diodes fabricated from Pb on p‐GaAs have been extensively studied as microwave mixers. The measured performance at X‐band is 9‐dB conversion loss and 1.6 K diode noise temperature, resulting in a mixer noise temperature of 13 K. This result is in good agreement with theory and represents a major advance in low‐noise frequency conversion.
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85.25.-j Superconducting devices
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts

Electrically variable channel‐length changes in MNOS transistors

M. L. Lonky and A. P. Turley

Appl. Phys. Lett. 28, 162 (1976); http://dx.doi.org/10.1063/1.88681 (3 pages)

Online Publication Date: 28 August 2008

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Silicon gate MNOS field‐effect transistors (FET’s) were fabricated with a gate dielectric consisting of 300 Å HCl oxide, and 450 Å of silicon nitride. The FET’s exhibited selective charge injection near the drain accompanied by silicon surface inversion, causing a shortening of the effective channel length. Measurements of dc drain characteristics exhibit substantial increases in transconductance. Overlap capacitance measurements also confirm the existence of a decreased channel length.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Magnetic domain observation of induced anisotropy around scratches in Mn‐Zn ferrites using SEM

M. Kinoshita, T. Murayama, R. Shimizu, and T. Ikuta

Appl. Phys. Lett. 28, 164 (1976); http://dx.doi.org/10.1063/1.88682 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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The (001) plane Mn‐Zn single‐crystal ferrite specimen was scratched by a pyramidal diamond at an interfacial angle of 120° along the [010] direction. Around the scratch groove, [100] domains were induced and enclosed with zigzag‐shaped walls, on which they are bounded by the main sample domains in the [010] direction. These domains have fine structure and could result from the induced anisotropy of the inverse magnetostriction effect caused by the residual stress around the scratch groove.
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75.60.Ch Domain walls and domain structure
85.70.Ge Ferrite and garnet devices

Bubble‐lattice propagation by conforming periodic Permalloy patterns

Hsu Chang and Charles P. Ho

Appl. Phys. Lett. 28, 166 (1976); http://dx.doi.org/10.1063/1.88683 (3 pages)

Online Publication Date: 28 August 2008

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Periodic Permalloy chevron patterns are designed to allow a close‐packed hexagonal bubble lattice to be aligned with and propagated by them under a rotating field. A group of bubbles is associated with each chevron, one being directly driven by a Permalloy pole while the others are indirectly driven by bubble‐bubble repulsion. For different values of rotating field and bias field, propagation and failure modes are delineated.
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85.70.Ay Magnetic device characterization, design, and modeling
75.60.Ch Domain walls and domain structure
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