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15 Feb 1976

Volume 28, Issue 4, pp. 171-240

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Low‐level periodic pulsed energy measurements with an electrically calibrated pyroelectric detector

Jon Geist, Harry J. Dewey, and Michael A. Lind

Appl. Phys. Lett. 28, 171 (1976); http://dx.doi.org/10.1063/1.88713 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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The use of an electrically calibrated pyroelectric detector for accurately measuring periodically pulsed (∼3‐ns duration) energy with an average power level in the microwatt to milliwatt range was investigated. Sources of error especially important in this application were the pyroelectric’s acoustic response, its linearity, and possible deterioration of its gold black coating. The detector had a thin polymer film that isolated the radiation receiver from the pyroelectric material. This film temporally resolved the pyroelectric response from the piezoelectric response to the acoustic energy that is associated with the absorption of an impulse of energy. Thus it was demonstrated that the acoustic response was not a serious source of error. The film also reduced the requirement of linearity on the on the pyroelectric transducer by about 5 orders of magnitude from the conditions of a bare transducer. It is concluded that periodic pulsed energy measurements with 5% uncertainties are readily achievable with the detector described.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
77.65.-j Piezoelectricity and electromechanical effects
82.40.-g Chemical kinetics and reactions: special regimes and techniques
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Localized measurements during intense relativistic electron beam interaction with a cool theta‐pinch plasma

W. F. Dove, K. A. Gerber, and D. A. Hammer

Appl. Phys. Lett. 28, 173 (1976); http://dx.doi.org/10.1063/1.88690 (4 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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A 1‐MeV 40–80‐kA 60‐nsec 40‐cm2 electron beam was injected into a 3‐eV 2×1015‐cm−3‐density plasma. Plasma density and temperature within the beam channel were measured by Thomson scattering, and local time‐dependent magnetic probe measurements were made across a plasma diameter. The observed plasma heating rate was an order of magnitude larger than can be explained on the basis of classical collisional processes.
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52.40.Mj Particle beam interactions in plasmas
52.50.Gj Plasma heating by particle beams
52.70.Ds Electric and magnetic measurements
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Influence of the altered layer on depth profiling measurements

Harold F. Winters and J. W. Coburn

Appl. Phys. Lett. 28, 176 (1976); http://dx.doi.org/10.1063/1.88714 (4 pages) | Cited 35 times

Online Publication Date: 28 August 2008

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A simple phenomenological theory of alloy sputtering is developed which suggests that in some instances the depth resolution of depth profiling measurements is limited by the time it takes to create a layer of altered chemical composition at the surface.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Profile studies of hydrogen trapping in metals due to ion damage

S. T. Picraux, J. Bøttiger, and N. Rud

Appl. Phys. Lett. 28, 179 (1976); http://dx.doi.org/10.1063/1.88715 (3 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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The retention of hydrogen isotopes in Mo at room temperature after ion implantation damage has been studied by measurements of H depth profiles and total D retained in the near‐surface region. Implantations of He, O, Ne, and Bi in a fluence range 3×1014–2×1017/cm2 were followed by 8‐keV hydrogen bombardment to fluences of 2×1015–2×1017/cm2. Large enhancements in the amount of hydrogen retained in preimplanted samples over samples without prior implantation have been observed and are interpreted in terms of damage trapping. For a given predamage ion fluence hydrogen retention increases linearly with hydrogen fluence until a saturation level is reached. Increased predamage fluence results in increased saturation level for hydrogen trapping, with average concentrations as high as ∼10 at.% achieved. An ion‐mass dependence indicates that the lighter ions, which create fewer primary displacements, are more effective in hydrogen trapping, suggesting a dependence on the damage density in the ion cascades.
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61.80.Jh Ion radiation effects
61.80.Lj Atom and molecule irradiation effects
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Anomalous migration of ion‐implanted Al in Si

H. B. Dietrich, W. H. Weisenberger, and J. Comas

Appl. Phys. Lett. 28, 182 (1976); http://dx.doi.org/10.1063/1.88716 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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Depth profiles for 60‐keV Al+ implanted in Si have been measured by SIMS analysis as a function of implant fluence and anneal temperature. A pronounced structure has been observed in the annealed profiles for fluences ⩾1015 cm−2. Comparison of the Al profiles with those of implanted B and Ga established that the structure is species dependent. The results of measurements designed to isolate damage effects indicate that the observed structure is induced by the reordering of the amorphous layer.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

New model for boron diffusion in silicon

J. R. Anderson and J. F. Gibbons

Appl. Phys. Lett. 28, 184 (1976); http://dx.doi.org/10.1063/1.88717 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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A new model for boron diffusion in silicon is proposed in which it is assumed that the dominant diffusing species is a neutral boron‐vacancy pair (B−V+). Analysis of the model shows that when CB is not the dominant species, the solution of the diffusion equation for constant surface concentration is a complementary error function. When CB is the dominant species during at least part of the diffusion, the diffusion equation must be solved numerically. It is shown that in this latter case, the variation of positively charged vacancy concentration with Fermi level causes the boron diffusivity to appear to be concentration dependent.
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66.30.J- Diffusion of impurities

cw tunable laser‐sideband generation from 5.5 to 6.5 μm by light scattering from spin motion in a spin‐flip Raman laser

V. T. Nguyen and E. G. Burkhardt

Appl. Phys. Lett. 28, 187 (1976); http://dx.doi.org/10.1063/1.88691 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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We have succeeded in generating cw laser sidebands at wavelengths tunable from ∼5.5 to ∼6.5 μm. The behavior of the power output of the generated radiation is described quantitatively by using the equivalence between four‐photon mixing and Raman scattering from coherent spin motion in a spin‐flip Raman laser.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.30.Hv Other nonmetallic inorganics

Laser performance of large Nd‐pentaphosphate crystals

J. G. Gualtieri and T. R. Aucoin

Appl. Phys. Lett. 28, 189 (1976); http://dx.doi.org/10.1063/1.88718 (4 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Laser performance of twinned 90% Nd–10% Y‐pentaphosphate (0.9 Nd–0.1 YP5O14) crystals with dimensions typically 4.5×3 mm in diamond‐shaped cross‐section by 2 mm thick is reported. Power conversion efficiencies of ≈24% and peak power outputs of approximately 240 mW were obtained under optical excitation with a repetitively pulsed argon laser. Samples of 0.75 Nd–0.25 InP5O14, 0.1 Nd–0.9 YP5O14, 0.1 Nd–0.9 CeP5O14, and 0.1 Nd–0.9 GdP5O14 were also lased.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers

Optical grating coupling between low‐index fibers and high‐index film waveguides

J. M. Hammer, R. A. Bartolini, A. Miller, and C. C. Neil

Appl. Phys. Lett. 28, 192 (1976); http://dx.doi.org/10.1063/1.88692 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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Grating couplers between low‐refractive‐index (n ≈1.5) optical fibers and high‐refractive‐index (n ≈2.2) electro‐optic planar guides have been analyzed and demonstrated. Coupling efficiencies of 6% between single modes of a film and a fiber have been observed. Efficiencies of approximately 86% between single‐mode fibers and films using blazed backward‐wave gratings are predicted. In addition, low‐loss low‐optical‐aperture multimode fibers may be coupled to single‐mode films with efficiencies greater than 50% and angular spreads less than 0.5°.
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42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Optical gain in a neutron‐induced 3He‐Ne‐O2 plasma

R. J. DeYoung, W. E. Wells, and G. H. Miley

Appl. Phys. Lett. 28, 194 (1976); http://dx.doi.org/10.1063/1.88693 (4 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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A single pass gain of ∼0.9% p/m (at 8446 Å in atomic oxygen) has been measured for a 3He‐Ne‐O2 plasma generated by the volumetric 3He(n,p)3H reaction induced by neutrons from a pulsed nuclear reactor. The plasma was contained in an optical cavity containing a chopping fan that permitted a measurement of the ratio of output 8446 Å from the normal cavity to that with the back mirror blocked. This ratio, called the unblocked‐blocked ratio, was used to study the gain dependence on total pressure and concentration. The maximum gain observed was for a concentration of 0.048% O2 and 1.5% Ne, at a total pressure of 600 Torr. The peak gain remained fairly constant with neutron fluxes from 1013 to 2.5×1015 n/cm2 sec. Results of other concentration studies are also discussed. The laser medium is pumped by thermal neutrons from the Illinois TRIGA reactor that impinge on a 80‐cm by 0.8‐cm‐i.d. glass tube containing from 50 to 800 Torr 3He‐Ne‐O2.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.75.-d Plasma devices

Low‐loss high‐purity GaAs waveguides for monolithic integrated optical circuits at GaAs laser wavelengths

G. E. Stillman, C. M. Wolfe, J. A. Rossi, and H. Heckscher

Appl. Phys. Lett. 28, 197 (1976); http://dx.doi.org/10.1063/1.88694 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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Attenuation measurements in epitaxial n‐GaAs waveguides of different purity have been made near the absorption edge. These measurements show that losses of less than 2 cm−1 can be achieved at energies within 50 meV of the band edge using material with ND+NA⩽2×1015 cm−3. These loss values are low enough to permit the use of GaAs waveguides in some integrated optical circuits and, in addition, are significantly lower than those published for AlxGa1−xAs waveguides of similar purity at energies comparably near the absorption edge.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

CO2 TEA lasers sustained by metastable N2

A. H. M. Olbertz and B. J. Reits

Appl. Phys. Lett. 28, 199 (1976); http://dx.doi.org/10.1063/1.88695 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Metastable N2 is able to ionize the low‐ionization seed gas tri‐n‐propylamine. In this way the entire CO2 laser gas discharge can be sustained.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Sm Magnetoactive discharges (e.g., Penning discharges)

Narrow‐band picosecond pulses from an ultrashort‐cavity dye laser

B. Fan and T. K. Gustafson

Appl. Phys. Lett. 28, 202 (1976); http://dx.doi.org/10.1063/1.88696 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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Narrow‐band picosecond pulses have been generated by a 50‐μ‐long Rhodamine B laser pumped by the second‐harmonic output of a passively mode‐locked Nd : glass laser.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Compression of 100‐psec laser pulses

R. H. Lehmberg and J. M. McMahon

Appl. Phys. Lett. 28, 204 (1976); http://dx.doi.org/10.1063/1.88697 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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Optical pulse compression using diffraction gratings has been demonstrated previously for ultrashort pulses (<20 psec). It has not been previously demonstrated for longer pulses because the chirp bandwidth required for a reasonable grating spacing was unattainable. In this letter we report the compression of a 100‐psec pulse by a factor ⩾12, at a grating spacing of 23 m, and with an efficiency approaching the theoretical limits.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Hp Optical processors, correlators, and modulators
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems

Ultraviolet laser action from Cu II in the 2500‐Å region

J. R. McNeil, G. J. Collins, K. B. Persson, and D. L. Franzen

Appl. Phys. Lett. 28, 207 (1976); http://dx.doi.org/10.1063/1.88698 (3 pages) | Cited 31 times

Online Publication Date: 28 August 2008

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We have obtained cw laser action from Cu II at 2486, 2506, 2591, and 2599 Å by exciting a neon discharge in a copper hollow cathode. We have observed 7‐mW cw output power just above threshold and the output appears to saturate at 210 mW under quasi‐cw operation. The four ultraviolet laser lines observed originate from the 3d95s (3D) term of Cu II. The quantum efficiency of the 2500‐Å laser transitions approaches 25%. Each of the four Cu II laser transitions has been employed in the past by spectroscopists as a secondary wavelength standard in the ultraviolet.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
34.80.Dp Atomic excitation and ionization

On the role of copper in the darkening of silver‐halide photochromic glass

Charles L. Marquardt

Appl. Phys. Lett. 28, 209 (1976); http://dx.doi.org/10.1063/1.88699 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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A photoinduced ESR signal has been detected in silver‐halide photochromic glasses. It is shown to arise from Cu++ ions distributed among distorted cation sites in the silver‐halide phase. Correlation with optical absorption data suggests that the photoinduced Cu++ may be directly responsible for a significant fraction of the photochromic darkening.
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42.70.Gi Light-sensitive materials
42.70.Ce Glasses, quartz
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Optical filters using coupled light waves in mixed crystals

J. P. Laurenti, K. C. Rustagi, and M. Rouzeyre

Appl. Phys. Lett. 28, 212 (1976); http://dx.doi.org/10.1063/1.88700 (2 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Coupling of polarized optical waves in wurtzite II‐VI mixed crystals is studied. It is shown that these crystals provide narrow‐band optical filters over a wide spectral range.
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42.79.Ci Filters, zone plates, and polarizers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Electroluminescence in Br‐, Cl‐, and Zn‐implanted CuInSe2 p‐n junction diodes

Phil Won Yu, Y. S. Park, and J. T. Grant

Appl. Phys. Lett. 28, 214 (1976); http://dx.doi.org/10.1063/1.88701 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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p‐n junction diodes have been prepared by implanting Br, Cl and Zn into p‐type CuInSe2. The forward current‐voltage characteristics can be expressed by I=I0[exp (eV/nkT)−1] with the parameter n≃2. Junctions made by implanting Br and Zn show rectification ratios of 2–3×105 : 1 at 1 V. Electroluminescence was observed in the wavelength region 1.3–1.4 μ with internal quantum efficiency of 20% at 77 °K and 0.1% at room temperature.
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78.60.Fi Electroluminescence
61.72.U- Doping and impurity implantation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Jb Light-emitting devices

New nanosecond continuum for excited‐state spectroscopy

Chinlon Lin and R. H. Stolen

Appl. Phys. Lett. 28, 216 (1976); http://dx.doi.org/10.1063/1.88702 (3 pages) | Cited 51 times

Online Publication Date: 28 August 2008

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A new nanosecond broad‐band continuum source is described. The continuum is generated by nonlinear optical processes in fiber waveguides pumped with a 20‐kW 10‐ns dye‐laser pulse of broad spectral width (∼150 Å). The continuum has a bandwidth of several thousand cm−1 in the visible with a total power ∼1 kW. The new continuum is in many aspects superior to previously known continuum sources for nanosecond time‐resolved excited‐state spectroscopy.
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42.72.-g Optical sources and standards
07.60.Rd Visible and ultraviolet spectrometers
42.65.-k Nonlinear optics
06.60.Jn High-speed techniques (microsecond to femtosecond)

A potential high‐efficiency Cl2 ultraviolet laser

C. H. Chen and M. G. Payne

Appl. Phys. Lett. 28, 219 (1976); http://dx.doi.org/10.1063/1.88703 (3 pages) | Cited 24 times

Online Publication Date: 28 August 2008

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An emission band extending from 2200 to 3000 Å has been observed following proton beam excitation of Ar‐Cl2 mixtures which is much more intense than the emission from Ar‐N2. The emission band was assigned to a bound‐free transition in the chlorine molecule. The energy precursor of excited Cl2 is the excimer Ar2∗ which emits a 1300‐Å continuum. Ion‐ion recombination can also contribute to this excited chlorine molecule. The emission continuum near the 1750 Å associated with ArCl∗ was also investigated.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.50.+d Fluorescence, phosphorescence (including quenching)

Time behavior of second‐positive emissions from a fast‐discharge N2+SF6 laser

Robert P. Akins and Shao‐Chi Lin

Appl. Phys. Lett. 28, 221 (1976); http://dx.doi.org/10.1063/1.88704 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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The time behavior of spectrally resolved N2 second‐positive emissions recently observed in our fast‐discharge N2+SF6 laser reveals some surprising features that cannot be explained on the basis of SF6‐catalyzed vibrational relaxation or collisional quenching of the lower‐laser‐level B3Πg. Instead, they suggest the existence of an extremely fast excitation process for the upper‐laser‐level C3Πu involving SF6 as an intermediary, although the kinetic path for such a process remains unclear.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges

Mobile Si ions in Fe‐doped LiNbO3 crystals

B. F. Williams, W. J. Burke, and D. L. Staebler

Appl. Phys. Lett. 28, 224 (1976); http://dx.doi.org/10.1063/1.88705 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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A mobile ionic species fixes thick‐phase holograms in Fe‐doped LiNbO3 crystals at temperatures between 100 and 200 °C. Results are given which show that Si ions are mobile at 200 °C in these crystals.
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66.30.J- Diffusion of impurities
42.40.Ht Hologram recording and readout methods
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Enhancement of the donor activity of implanted selenium in GaAs by gallium implantation

J. M. Woodcock

Appl. Phys. Lett. 28, 226 (1976); http://dx.doi.org/10.1063/1.88706 (2 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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n‐type doping levels in GaAs up to 5×1018 cm−3 have been obtained by the ion implantation of 400‐keV selenium ions at 200 °C followed by 360‐keV gallium ions at 200 °C. This is an order of magnitude above the maximum obtained from the implantation of selenium alone.
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61.72.U- Doping and impurity implantation
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Coloration in a WO3 film

Y. Hajimoto and T. Hara

Appl. Phys. Lett. 28, 228 (1976); http://dx.doi.org/10.1063/1.88707 (2 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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The electrical coloration in WO3 films in practical fabrication originates at the interface between WO3 and CaF2 and migrates towards the cathode. The rate of migration is higher than 1.4×10−9 cm2/V sec.
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73.61.Ng Insulators
66.30.H- Self-diffusion and ionic conduction in nonmetals
82.47.-a Applied electrochemistry
61.72.jn Color centers

Schottky barrier heights of nickel‐platinum silicide contacts on n‐type Si

L. E. Terry and Jack Saltich

Appl. Phys. Lett. 28, 229 (1976); http://dx.doi.org/10.1063/1.88708 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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The barrier heights of NiPt silicide–n‐type Si have been determined from the saturation current density of diodes for various concentrations of Ni and Pt. Ni‐Pt films on Si were heated to 475 °C to obtain a NiPt silicide. The barrier height varies smoothly from that of NiSi‐Si to PtSi‐Si with increasing amounts of Pt in the NiPt films. For 19 wt% Pt the barrier is 0.69 eV and for 67 wt% Pt the height is 0.78 eV.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
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