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15 Mar 1976

Volume 28, Issue 6, pp. 295-359

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Nonlinear acoustic microscopy

R. Kompfner and R. A. Lemons

Appl. Phys. Lett. 28, 295 (1976); http://dx.doi.org/10.1063/1.88759 (3 pages) | Cited 22 times

Online Publication Date: 28 August 2008

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The sharply convergent acoustic beam used in the scanning acoustic microscope can provide sufficient intensity to produce strong nonlinear effects at microwave frequencies. Second harmonic acoustic radiation generated in the vicinity of the beam focus is readily detected and used to form an image of an object placed in the focal plane.
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07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)
43.58.+z Acoustical measurements and instrumentation

Injection‐stimulated dislocation motion in semiconductors

L. C. Kimerling, P. Petroff, and H. J. Leamy

Appl. Phys. Lett. 28, 297 (1976); http://dx.doi.org/10.1063/1.88760 (4 pages) | Cited 33 times

Online Publication Date: 28 August 2008

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Misfit dislocations introduced during LPE growth are shown to act as sinks for point defects introduced by 1‐MeV electron bombardment in Ga1−xAlxAs1−yPy/GaAs p+n heterojunctions. Electron‐beam‐stimulated dislocation motion was observed directly with in situ TEM studies on previously bombarded material. SEM measurements have correlated beam‐induced defect annealing with recombination‐enhanced defect motion. These results suggest that dislocation networks, which are active in the dark‐line‐defect degradation mode of heterostructure lasers, may form by a climb mechanism which is activated by the injection‐stimulated motion of point defects.
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61.72.Lk Linear defects: dislocations, disclinations
78.40.Fy Semiconductors
61.80.Fe Electron and positron radiation effects
66.30.J- Diffusion of impurities

Rapid turn‐off in triode optical gate liquid crystal devices

D. J. Channin and D. E. Carlson

Appl. Phys. Lett. 28, 300 (1976); http://dx.doi.org/10.1063/1.88761 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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A liquid crystal field‐effect light valve with high‐speed turn‐off operation is described. The three‐terminal device is symmetric in its turn‐on/turn‐off operation and uses digital rather than multifrequency addressing.
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85.60.Pg Display systems
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
42.79.Hp Optical processors, correlators, and modulators

Antenna properties and operation of metal‐barrier‐metal devices in the infrared and visible regions

Shyh Wang

Appl. Phys. Lett. 28, 303 (1976); http://dx.doi.org/10.1063/1.88762 (3 pages) | Cited 35 times

Online Publication Date: 28 August 2008

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See Also: Erratum

Show Abstract
We apply the theory of linear antennas to metal‐barrier‐metal (MBM) devices. An expression is derived for the optical voltage induced across the insulating barrier, taking into account that the metal conductivity is in the relaxation region for infrared and visible radiation. It is shown that the optical voltage should drop with frequency according to ω−3. This ω−3 dependence suggests that we should look for new mechanisms in order to extend the usefulness of MBM devices into the visible region.
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73.40.Rw Metal-insulator-metal structures
84.40.Ba Antennas: theory, components and accessories

Two‐species flow in relativistic diodes near the critical field for magnetic insulation

Kenneth D. Bergeron

Appl. Phys. Lett. 28, 306 (1976); http://dx.doi.org/10.1063/1.88763 (3 pages) | Cited 51 times

Online Publication Date: 28 August 2008

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An analysis of space‐charge‐limited counterstreaming flow of ions and electrons in a high‐voltage planar diode in the presence of a strong transverse magnetic field is presented. A two‐component one‐dimensional cold‐fluid model is used which includes most self‐consistent effects. A substantial enhancement of ion current by a factor of 3–6 is found at fields slightly larger than the critical magnetic insulation field.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
41.75.Fr Electron and positron beams
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
52.80.Vp Discharge in vacuum

Conditions for the self‐destruction of a pulsed intense relativistic electron beam

M. Friedman, J. G. Siambis, and D. P. Bacon

Appl. Phys. Lett. 28, 308 (1976); http://dx.doi.org/10.1063/1.88764 (4 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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It has been found that the stable flow of a magnetically focused unneutralized intense relativistic electron beam (IREB) depends on beam front parameters (e.g., current and voltage rise times) and on the geometry of the propagation region (e.g., length). It is argued in this letter that a pulsed IREB is susceptible to a two‐stream instability resulting from reflection of electrons from the beam front. This effect may have to be taken into account in IREB applications involving fast rise times and/or long drift lengths, such as ion accelerators, electron autoaccelerators, and intense microwave generators.
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41.75.Fr Electron and positron beams
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.30.-q Plasma dynamics and flow
52.75.Di Ion and plasma propulsion

Direct observations of defects in implanted and postannealed silicon wafers

L. D. Glowinski, K. N. Tu, and P. S. Ho

Appl. Phys. Lett. 28, 312 (1976); http://dx.doi.org/10.1063/1.88765 (2 pages) | Cited 24 times

Online Publication Date: 28 August 2008

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We have used transmission electron microscopy to study crystalline defects in Si wafers which were first implanted with Si ions to produce an amorphous surface layer and then annealed to produce epitaxial regrowth. The original high degree of crystalline perfection is not entirely recovered. In the implanted layer, small defect clusters, interstitial loops, and large half‐loops have been observed. The density, distribution, and characteristics of these defects have been determined.
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61.72.U- Doping and impurity implantation
61.72.Lk Linear defects: dislocations, disclinations
68.55.-a Thin film structure and morphology

The physical state of implanted tungsten in copper

A. G. Cullis, J. M. Poate, and J. A. Borders

Appl. Phys. Lett. 28, 314 (1976); http://dx.doi.org/10.1063/1.88766 (3 pages) | Cited 26 times

Online Publication Date: 28 August 2008

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The physical state of W implanted in Cu has been studied by 4He+ ion channeling and transmission electron microscopy. At implant concentrations ≲1 at.%, W is in solid solution but may form elemental bcc precipitates on annealing to ≳450 °C. For implant concentrations of ∼10 at.%, a disordered layer of Cu and W is formed with the W occupying no regular lattice sites; on annealing W precipitates are formed with dimensions of a few hundred angstroms.
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61.72.U- Doping and impurity implantation
64.75.-g Phase equilibria

Accurate phase‐matching in sputtered birefringent Ta2O5Nx waveguides

J. Wei, S. J. Ingrey, W. D. Westwood, and S. Kos

Appl. Phys. Lett. 28, 317 (1976); http://dx.doi.org/10.1063/1.88741 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Accurate matching of propagating constants (or phase matching) of TE0 and TM0 modes has been demonstrated in birefringent waveguides prepared by reactively sputtering tantalum in O2/N2 mixtures. Exact phase matching occurs at a guide thickness of 3926 Å for films with indices of 1.884 and 1.914 on glass substrates. For a coherence length ⩽1 cm, corresponding to a difference in normalized propagation constants, Δ (β/k), of 3×10−5, the thickness must be within 20 Å of this value and this has been reproducibly obtained after calibration of the deposition rate. Reduction of Δ (β/k) to within 6.3×10−6 has been demonstrated. These techniques can be extended to the fabrication of active polarization converters.
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42.79.Gn Optical waveguides and couplers
42.25.Lc Birefringence

Two‐photon spectroscopy using picosecond light continua

A. Penzkofer, W. Falkenstein, and W. Kaiser

Appl. Phys. Lett. 28, 319 (1976); http://dx.doi.org/10.1063/1.88742 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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Two‐photon absorption is measured using two picosecond pulses: a monochromatic pulse and a pulse with broad frequency spectrum. Single pulses of high peak intensity were applied to crystalline samples without damage. Introducing a time delay of several picoseconds between the two pulses, possible two‐step processes can be elucidated. As an example, two‐photon absorption in CdS was investigated over an energy range from 2.4 to 3.5 eV.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Mq Elemental semiconductors
71.20.Nr Semiconductor compounds

Electro‐optic channel waveguide modulator for multimode fibers

A. R. Nelson, D. H. McMahon, and R. L. Gravel

Appl. Phys. Lett. 28, 321 (1976); http://dx.doi.org/10.1063/1.88743 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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A multimode electro‐optic modulator has been constructed and demonstrated using commercially available multimode fibers. Modulation occurs by the controlled channeling of light under metal electrodes. Significant modulation depth can be obtained for small applied voltages (50% with 14 Vrms) and the ultimate bandwidth is over 600 MHz. Since the device operates on the principle of total internal reflection, performance is independent of wavelength, and precise tolerances are not required for construction. As opposed to single‐mode devices, high‐efficiency fiber‐to‐film coupling is readily accomplished.
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42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics

Experimental method of determining the intrinsic diffraction efficiency of holograms stored by the photorefractive effect

M. G. Moharam, W. D. Cornish, and L. Young

Appl. Phys. Lett. 28, 324 (1976); http://dx.doi.org/10.1063/1.88744 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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A method is described in which a normally incident ancillary light beam of different wavelength from that used to write the holograms allows the intrinsic diffraction efficiency of holograms stored in ’’photorefractive’’ materials such as lithium niobate to be determined without error due to multiple internal reflections.
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42.40.Kw Holographic interferometry; other holographic techniques
42.30.-d Imaging and optical processing
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Fast‐discharge‐initiated XeF laser

C. P. Wang, H. Mirels, D. G. Sutton, and S. N. Suchard

Appl. Phys. Lett. 28, 326 (1976); http://dx.doi.org/10.1063/1.88745 (3 pages) | Cited 35 times

Online Publication Date: 28 August 2008

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By means of fast‐discharge circuitry, intense laser emission was observed from the XeF molecule at 351, 353, and 349 nm in a gas mixture of He, Xe, and NF3. The over‐all electrical efficiency based on the energy deposited in the gas was 1.2%; the ’’wall‐plug’’ efficiency was 0.2%. An output energy of 1 mJ was measured from a laser pulse 40 nsec in duration, yielding a peak power of 25 kW. A simple model is proposed to estimate the laser performance.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

Efficient high‐power CH3F amplifier for a 496‐μm cavity laser

Z. Drozdowicz, R. J. Temkin, K. J. Button, and D. R. Cohn

Appl. Phys. Lett. 28, 328 (1976); http://dx.doi.org/10.1063/1.88746 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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A CH3F amplifier has been constructed for use with a narrow‐linewidth pulsed 496‐μm CH3F cavity laser. The power conversion ratio of the amplifier, defined as the ratio of 496‐μm power emitted to CO2 power absorbed, had a maximum value of (4.7±2.5) ×10−3 at a CH3F gas pressure of 0.1 Torr. The highest average power, 6±1 kW, was produced by the oscillator‐amplifier laser system when the amplifier was run with a CH3F gas pressure of 0.9 Torr. At this pressure the power conversion ratio of the amplifier was (1.8±1.0) ×10−3. Analysis of the gain data yields values for the small‐signal gain and saturation intensity as a function of CH3F gas pressure.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Unstable propagation of a Gaussian laser beam in a plasma waveguide

M. D. Feit and D. E. Maiden

Appl. Phys. Lett. 28, 331 (1976); http://dx.doi.org/10.1063/1.88747 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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Laser heating of long magnetically confined plasma columns to fusion temperatures requires propagation of a trapped laser beam over considerable distances. The present paper employs the parabolic approximation to the wave equation to analyze the propagation of a Gaussian beam through a plasma with a parabolic transverse density profile. Although propagation is stable in the axially uniform case, exhibiting alternate focusing and defocusing of the beam, it is unstable to small axial perturbations of certain wavelengths. In particular, an exponentially growing beam radius results from perturbations at wavelengths near that associated with the alternate focusing and defocusing mentioned above.
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52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
52.50.Gj Plasma heating by particle beams

Optical levitation in high vacuum

A. Ashkin and J. M. Dziedzic

Appl. Phys. Lett. 28, 333 (1976); http://dx.doi.org/10.1063/1.88748 (3 pages) | Cited 54 times

Online Publication Date: 28 August 2008

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Optical levitation of highly transparent particles has been observed in the high‐vacuum regime where viscous damping and thermal conductivity are small, the particle is cooled only by thermal radiation, and radiometric forces are negligible. The effects of an impulse and adiabatic manipulation on the dynamics of a sphere were studied from atmospheric pressure down to ∼10−6 Torr. The calculated time for an oscillating particle to decay to half‐amplitude due to the intrinsic optical damping at zero pressure is ∼0.7 years.
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42.62.-b Laser applications
06.60.Sx Positioning and alignment; manipulating, remote handling
42.79.-e Optical elements, devices, and systems

Raman band contours for water vapor as a function of temperature

J. L. Bribes, R. Gaufrès, M. Monan, M. Lapp, and C. M. Penney

Appl. Phys. Lett. 28, 336 (1976); http://dx.doi.org/10.1063/1.88749 (2 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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A simplified method of calculation of the contour of a totally polarized Raman band for an asymmetric top molecule in the gaseous state has been applied to produce the first accurate band‐shape calculation for the ν1 band of the water molecule. The good fits between computed and experimental contours from approximately 150 to 350 °C lay the foundation for temperature determination for water vapor from measurements of the Raman band profile and for density measurements independent of the temperature.
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33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
33.70.Ca Oscillator and band strengths, lifetimes, transition moments, and Franck-Condon factors
31.15.xh Group-theoretical methods
33.20.-t Molecular spectra
92.60.-e Properties and dynamics of the atmosphere; meteorology

Nonlinear dynamic theory for photorefractive phase hologram formation

Dae M. Kim, Rajiv R. Shah, T. A. Rabson, and F. K. Tittel

Appl. Phys. Lett. 28, 338 (1976); http://dx.doi.org/10.1063/1.88750 (3 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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A nonlinear dynamic theory is developed for the formation of photorefractive volume phase holograms. A feedback mechanism existing between the photogenerated field and free‐electron density, treated explicitly yields the growth and saturation of the space‐charge field in a time scale characterized by the coupling strength between them. The expression for the field reduces in the short time limit to previous theories and approaches in the long time limit the internal or photovoltaic field. Additionally, the phase of the space‐charge field is shown to be time dependent.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
74.20.-z Theories and models of superconducting state
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Radiation‐induced effects in GaAs thin‐film optical (10.6 μm) waveguides

S. Share, A. S. Epstein, T. Monse, W. S. C. Chang, and M. S. Chang

Appl. Phys. Lett. 28, 340 (1976); http://dx.doi.org/10.1063/1.88751 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Two types of GaAs thin‐film optical waveguide structures operating at 10.6 μm were examined before and after exposure to neutron and γ irradiation. The attenuation rate of the GaAs/n+‐GaAs structure was particularly sensitive to neutron irradiation of 1013 cm−2 and exhibited postirradiation annealing at 150 °C. This is in contrast to the relative neutron irradiation insensitivity of a GaAs/GaAs1−xPx/n+‐GaAs structure. The effect of γ radiation is less pronounced for both structures. The radiation‐induced changes are discussed in terms of free‐carrier absorption, index of refraction, scattering centers, and absorption by complexes.
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78.20.-e Optical properties of bulk materials and thin films
61.80.-x Physical radiation effects, radiation damage
42.79.Gn Optical waveguides and couplers
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Optically pumped 16‐μm CO2 laser

R. M. Osgood

Appl. Phys. Lett. 28, 342 (1976); http://dx.doi.org/10.1063/1.88752 (4 pages) | Cited 25 times

Online Publication Date: 28 August 2008

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A potentially useful 16‐μm CO2 laser, oscillating on the [10°0,02°0]II to 0110 transition, is described. The v=1→v=0 lines from an HBr chemical laser were used to pump a low‐pressure mixture of HBr and CO2 gases. Vibrational energy transfer from HBr followed by a 9.6‐μm stimulating pulse populated the CO2 [10°0,02°0]II level.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.80.Xx Level crossing and optical pumping

Ultraviolet emission from CO2+ produced in low‐energy He2+‐CO2 collisions

G. H. Bearman, H. H. Harris, and J. J. Leventhal

Appl. Phys. Lett. 28, 345 (1976); http://dx.doi.org/10.1063/1.88753 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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Cross sections for production of electronically excited states of CO2+ in low‐energy He2+‐CO2 collisions have been measured. The magnitudes of these cross sections are large enough to suggest the possibility of producing laser action at one or more wavelengths in an e‐beam‐initiated discharge in He‐CO2 mixtures.
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34.50.Lf Chemical reactions
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Jc Visible and ultraviolet spectra

Uniaxial stress effects on double injection diodes

T. Hayashi and S. Iida

Appl. Phys. Lett. 28, 348 (1976); http://dx.doi.org/10.1063/1.88754 (2 pages)

Online Publication Date: 28 August 2008

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Uniaxial stress effects on the current‐voltage characteristics of Si and Ge double injection diodes are described and discussed. The threshold and the minimum voltages were decreased and the current flowing in the diode was increased with stress. These variations can qualitatively be explained by the change of mobility of the carrier and the capture cross section, and by the stress‐induced deep levels.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.Hi Surface barrier, boundary, and point contact devices
72.20.Fr Low-field transport and mobility; piezoresistance

Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe

Ireneusz Strzalkowski, Sharad Joshi, and C. R. Crowell

Appl. Phys. Lett. 28, 350 (1976); http://dx.doi.org/10.1063/1.88755 (3 pages) | Cited 59 times

Online Publication Date: 28 August 2008

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The dielectric constants of GaAs, CdTe, and ZnSe and their temperature dependences were found from low‐frequency capacitance measurements. From 100 to 300 °K the dielectric constants vary linearly with temperature. No electric field dependence was found up to 104 V/cm, nor frequency dependence between 20 Hz and 1 MHz. The dielectric constants extrapolated linearly to 0 °K are 12.35±0.09, 10.31±0.08, and 8.80±0.07 for GaAs, CdTe, and ZnSe, respectively. The temperature coefficients λ (≡ϵ (0)−1 dϵ/dt) are 2.01×10−4/°K, 2.27×10−4/°K, and 1.71×10−4/°K, respectively, with an accuracy of ±0.02×10−4/°K.
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77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation

Superconducting weak‐link current‐phase relations

L. D. Jackel, J. M. Warlaumont, T. D. Clark, J. C. Brown, R. A. Buhrman, and M. T. Levinsen

Appl. Phys. Lett. 28, 353 (1976); http://dx.doi.org/10.1063/1.88756 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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Direct measurements have been made of the current‐phase relation (CPR) of photolithographic tin microbridges, scribed indium microbridges, proximity bridges, and point contacts. Hysteretic current‐phase relations have been observed in uniform‐thickness tin microbridges, while proximity bridges have sinusoidal or nearly sinusoidal current‐phase relations.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Microfabrication of circuits for magnetic bubbles of diameter 1 μm and 2 μm 

R. K. Watts, H. M. Darley, J. B. Kruger, T. G. Blocker, D. C. Guterman, J. T. Carlo, D. C. Bullock, and M. S. Shaikh

Appl. Phys. Lett. 28, 355 (1976); http://dx.doi.org/10.1063/1.88757 (3 pages)

Online Publication Date: 28 August 2008

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We describe microfabrication techniques for Permalloy circuits for magnetic bubbles of diameter 1 μm and 2 μm. Patterns are defined by electron beam on an x‐ray mask. X‐ray lithography and ion milling are employed to replicate the pattern in Permalloy.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
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