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1 Apr 1976

Volume 28, Issue 7, pp. 361-410


Grating acoustic scanners

A. Rønnekleiv, J. Souquet, and H. J. Shaw

Appl. Phys. Lett. 28, 361 (1976); http://dx.doi.org/10.1063/1.88780 (2 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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A simple acoustic scanning device has been devised in which a chirped SAW beam is converted into a focused scanning bulk wave beam by coherent scattering from a grating of parallel grooves. The device can operate in both transmitting and receiving modes, and is applicable to the acoustic imaging of objects in real time.
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43.60.+d Acoustic signal processing
43.58.+z Acoustical measurements and instrumentation
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Melt removal and planar growth of In1−xGaxP1−zAsz heterojunctions

J. J. Coleman, N. Holonyak, and M. J. Ludowise

Appl. Phys. Lett. 28, 363 (1976); http://dx.doi.org/10.1063/1.88781 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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Evidence is provided showing that incomplete melt removal, or wipe‐off, at the conclusion of liquid phase epitaxial (LPE) In1−xGaxP1−zAsz growth results in strained pitted dark layers because of the loss in composition match between the melt and substrate. Similarly, a small amount of drag‐over of one quaternary melt under a different composition melt is sufficient to cause attack of the underlying substrate (or LPE layer) and to cause local changes in the second melt destroying the composition match with the substrate. Single‐layer and multilayer In1−xGaxP1−zAsz structures are shown in which incomplete melt removal causes the growth of pitted ragged nonuniform layers side by side with uniform planar layers.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
85.60.Jb Light-emitting devices

Solid phase epitaxial studies using vacuum deposition on heated silicon substrates

J. E. Davey, A. Christou, and H. M. Day

Appl. Phys. Lett. 28, 365 (1976); http://dx.doi.org/10.1063/1.88782 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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Thin epitaxial films of silicon have been grown at 600 °C on (111) silicon surfaces by vacuum deposition. The silicon deposition and growth was performed subsequent to a hot deposition (125 °C) of 300‐Å gold film on the substrate.
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68.55.-a Thin film structure and morphology
81.20.-n Methods of materials synthesis and materials processing

The strip acoustic surface waveguide: Comparison between measurement and theory

K. H. Yen and A. A. Oliner

Appl. Phys. Lett. 28, 368 (1976); http://dx.doi.org/10.1063/1.88783 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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New measurements now permit a comparison to be made with various theories for the propagation characteristics of the strip acoustic surface waveguide in order to determine which theory is the most accurate. These new measurements are presented in the framework of all previously available measurements and theories for the strip waveguide. The ways in which the theories differ are indicated, and recommendations are made as to which theory should be used in which parameter range.
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84.40.Az Waveguides, transmission lines, striplines
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.20.+g General linear acoustics

Application of granular semiconductors to photothermal conversion of solar energy

J. I. Gittleman

Appl. Phys. Lett. 28, 370 (1976); http://dx.doi.org/10.1063/1.88784 (2 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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A novel selective solar absorber, consisting of a dispersion of semiconductor grains in a low‐dielectric‐constant insulator is proposed. Calculations based on Maxwell‐Garnett theory show that because of its lower reflectivity for λ<1.5 μm this material is about 60% more efficient than silicon in converting solar energy to heat. Reflectivity measurements for Ge‐Al2O3 films on aluminum agree with the predictions of the Maxwell‐Garnett theory. The problems associated with the reduction to practice are discussed.
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84.60.Rb Thermoelectric, electrogasdynamic and other direct energy conversion
78.20.-e Optical properties of bulk materials and thin films
81.65.-b Surface treatments

Enrichment of N15 by chemical reactions in a glow discharge at 77 °K

T. J. Manuccia and M. D. Clark

Appl. Phys. Lett. 28, 372 (1976); http://dx.doi.org/10.1063/1.88785 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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We have observed enrichments of N15 as large as 21±1% in the mixed nitrogenous products (NO, N2O, NO2) of the reaction of N2 and O2 driven by a pulsed glow discharge at 77 °K. A typical energy expenditure per atom separated was 0.22 MeV. Enrichments increased but yields decreased as the electrical energy deposited per reactant molecule was reduced. Under similar conditions enrichment of 15% was observed for N15 from the reaction N2+3D2→2ND3.
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28.60.+s Isotope separation and enrichment
82.20.Tr Kinetic isotope effects including muonium
82.20.Rp State to state energy transfer

Direct experimental observation of band‐structure effects in GaPxAs1−x : N alloys by radiative lifetime measurements

J. Chevallier, H. Mariette, D. Diguet, and G. Poiblaud

Appl. Phys. Lett. 28, 375 (1976); http://dx.doi.org/10.1063/1.88786 (3 pages) | Cited 16 times

Online Publication Date: 28 August 2008

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The decay time of the photoluminescence due to the recombination of excitons bound to nitrogen in GaPxAs1−x alloys (x≳0.55) at 4.2 °K has been studied by uv laser time‐resolved spectroscopy. Using hydrogen implantation in order to reduce greatly the nonradiative lifetime of the samples, we show that the measured decay time is the radiative lifetime τxR of the bound excitons. Its variation with alloy composition is in good qualitative agreement with theoretical predictions. The observed decrease of τxR when the alloy becomes richer in GaAs is due to the modification of the recombination transition rate when the Γ band gets closer to the X band (band‐structure effect).
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78.55.-m Photoluminescence, properties and materials
71.70.-d Level splitting and interactions

Exciton‐enhanced conductivity and photoresistivity in tin oxide–dye films

E. J. Seykora

Appl. Phys. Lett. 28, 377 (1976); http://dx.doi.org/10.1063/1.88787 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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An enhancement of conductivity was observed in an n‐type tin oxide semiconductor when coated with a highly polarizable insulating dye. The enhanced conductivity is thought to be a result of conduction electron–exciton interactions. The relationship between the observed photoresistivity and the excited states of the dye molecules is discussed.
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72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Ultraviolet electroluminescence in AlN 

R. F. Rutz

Appl. Phys. Lett. 28, 379 (1976); http://dx.doi.org/10.1063/1.88788 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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A method of growing single‐crystal low‐resistivity (∼103 Ω cm) n‐type AlN is described in which dc ultraviolet electroluminescence is observed for the first time. The emission is in a broad band extending from 215 nm into the blue end of the visible spectrum. AlN grown on tungsten and sapphire substrates is contacted with Al and Nb. Light emission occurs in small spots near the negatively biased contact for currents of a few mA at voltages as low as 17 V, but typically in the range between 30 and 150 V. The external quantum efficiency is 6×10−6, and at constant current the light output is nearly independent of temperature up to several hundred degrees centigrade.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
81.20.-n Methods of materials synthesis and materials processing

Measurements of wavelength dependence of group delay in a multimode silica fiber

Takeshi Ozeki and A. Watanabe

Appl. Phys. Lett. 28, 382 (1976); http://dx.doi.org/10.1063/1.88767 (2 pages)

Online Publication Date: 28 August 2008

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The wavelength dependence of the group delay in a multimode silica fiber was determined from the wavelength‐dependent phase shift of the sinusoidally modulated light transmitted by the fiber. When the lower‐order modes were dominant in the modal power distribution, the measured dispersion at a wavelength of 830 nm was 0.90 ns/10 nm/km. When the launching conditions were changed to excite more of the higher‐order modes, the measured dispersion decreased to 0.60 ns/10 nm/km, indicating that the material dispersion was compensated partially by the waveguide dispersion.
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42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics

Yields of N2(C) from Ar∗+N2 and XeBr∗ from Xe∗+Br2 

S. K. Searles and G. A. Hart

Appl. Phys. Lett. 28, 384 (1976); http://dx.doi.org/10.1063/1.88768 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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Investigation of reactions I and II, where ∗ represents a low‐lying electronically excited state, Ar∗+N2→N2(C)+Ar (reaction I) and Xe∗+Br2→XeBr∗+Br (reaction II), was carried out by e‐beam excitation of Ar‐N2 mixtures and Xe‐Cr2 mixtures. Analysis of the fluorescence data and e‐beam energy deposition led to yields of 0.20 N2(C) for Ar∗ and 0.30 XeBr∗ for Xe∗.
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82.20.Hf Product distribution
34.50.Lf Chemical reactions
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Photolytic pumping of the iodine laser by XeBr

J. C. Swingle, C. E. Turner, J. R. Murray, E. V. George, and W. F. Krupke

Appl. Phys. Lett. 28, 387 (1976); http://dx.doi.org/10.1063/1.88769 (2 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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The efficiency for producing fluorescence from the 220–340‐nm bands of XeBr has been measured to be 11±5% in an electron‐beam‐driven device, a value consistent with an assumed kinetic model. The photolytic pumping of the 1.315‐μm atomic iodine laser is demonstrated using this narrow‐band fluorescer.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Jc Visible and ultraviolet spectra
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

Normalization technique for accurate measurements of two‐photon absorption coefficients

Haim Lotem, J. H. Bechtel, and W. L. Smith

Appl. Phys. Lett. 28, 389 (1976); http://dx.doi.org/10.1063/1.88770 (3 pages) | Cited 19 times

Online Publication Date: 28 August 2008

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A new technique for accurate measurement of the two‐photon absorption (TPA) coefficient relative to the known TPA coefficient of a reference material is presented. It is shown that the ratio between the transmitted energies of two identical laser pulses through the unknown and the reference materials is a constant which is independent of the laser intensity if a filter of an appropriate transmission value F is put in front of the reference material. The ratio between the two TPA coefficients is simply related to F. Using the outlined technique the ratios between the TPA coefficients of three semiconductor samples were measured with an accuracy of ±10%
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Pulse dispersion in multimode fibers with graded B2O3‐SiO2 cores and uniform B2O3‐SiO2 cladding

L. G. Cohen, G. W. Tasker, W. G. French, and J. R. Simpson

Appl. Phys. Lett. 28, 391 (1976); http://dx.doi.org/10.1063/1.88771 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Dispersion differences between B2O3 and SiO2 constituents make nonparabolic profiles optimal equalizers of modal group delays. Pulse dispersion measurements were correlated with graded refractive‐index profile shapes in a systematic study of a series of multimode fibers with graded B2O3‐SiO2 cores and uniform B2O3‐SiO2 cladding. One of the fibers had an α≈1.77 power law exponent, which at λ≈907.5 nm wavelength caused 2σ=0.26 nsec/km full rms output pulse spreading. When expected material dispersion effects were deconvolved from the output pulse spreading, the resultant pulse width was approximately 75 times less than the result expected for a comparable step‐index fiber.
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42.81.-i Fiber optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Wc Optical coatings

Positive gain measurements on the 3350‐Å continuum band of Hg2

L. A. Schlie, B. D. Guenther, and R. D. Rathge

Appl. Phys. Lett. 28, 393 (1976); http://dx.doi.org/10.1063/1.88772 (4 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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A He‐Cd+ laser operating at 3250 Å and an Ar+ laser at 3511 Å and 3638 Å have been used to probe for gain on both sides of the Hg2 3350‐Å (A31u→X1Σg+) continuum band in Hg vapor at a pressure of 3.75 atm that was pumped by a 1.5‐MeV 600‐J 20‐nsec electron beam. This letter presents the first observation of positive gain on this 3350‐Å band of Hg2. The results indicate that the stimulated emission cross section for this band is larger than any associated photoionization process in the Hg vapor and has a magnitude of approximately 10−18 cm2. Also, raising the temperature of the vapor above its saturation value increases the maximum value and duration of the observed gain, indicating that the population of the upper level of this transition is being fed by a temperature‐dependent internal energy reservoir in the Hg.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Distributive Tee couplers

D. H. McMahon and R. L. Gravel

Appl. Phys. Lett. 28, 396 (1976); http://dx.doi.org/10.1063/1.88773 (3 pages)

Online Publication Date: 28 August 2008

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A distributive coupling technique is described in which some portion of the light signal is coupled into and out of all fibers of a bundle in parallel. Tees employing distributive coupling require no mixer rods, dissipate no power via packing fraction losses, and hence exhibit a throughout coupling loss which asymptotically approaches zero as the power coupled to the side arm decreases.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors

Time‐resolved pump depletion in n‐InSb Raman spin‐flip laser

J. F. Figueira, C. D. Cantrell, J. P. Rink, and P. R. Forman

Appl. Phys. Lett. 28, 398 (1976); http://dx.doi.org/10.1063/1.88774 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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We have observed a strong transient optical absorption in n‐InSb (n=1016 cm−3) induced by an intense (2 MW cm−2) 10.6‐μm laser beam at 2 K. Detailed studies of the time history of the transmitted 10.6‐μm beam and the spin‐flip Raman laser pulse produced in the InSb show that the 10.6‐μm absorption lasts for ≳100 ns, and that spin‐flip lasing occurs only at the beginning of the intense portion of the 10.6‐μm pump pulse and after the absorption has disappeared.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
32.80.Xx Level crossing and optical pumping

Thermal oxidation of silicon wafer with ’’striations’’ from heavy phosphorus doping

Kim Ritchie

Appl. Phys. Lett. 28, 401 (1976); http://dx.doi.org/10.1063/1.88775 (2 pages)

Online Publication Date: 28 August 2008

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The oxidation of heavily phosphorus doped (⩽0.001 Ω cm 〈111〉) silicon wafers yielded nonuniform oxide films at thicknesses ⩽2000 Å. The variation of the film thickness and oxidation kinetics was influenced by the dopant concentration and the associated ’’striations’’ in the silicon.
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82.20.Pm Rate constants, reaction cross sections, and activation energies
81.65.Kn Corrosion protection
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Impact ionization rates for electrons and holes in GaAs1−xSbx alloys

T. P. Pearsall, R. E. Nahory, and M. A. Pollack

Appl. Phys. Lett. 28, 403 (1976); http://dx.doi.org/10.1063/1.88776 (3 pages) | Cited 25 times

Online Publication Date: 28 August 2008

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We have measured the impact ionization rates for electrons and holes in GaAs1−xSbx for alloys with x=0.05, 0.10, and 0.12. The results show that the ionization rates for electrons (α) and holes (β) are different and a function of Sb content. In particular, for GaAs0.88Sb0.12 electrons have the higher ionization rate with α/β=2.5, while for GaAs holes have the higher ionization rate with α/β=0.25.
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79.20.Kz Other electron-impact emission phenomena
72.20.Ht High-field and nonlinear effects

Deep trap measurement on S+‐implanted layers in GaAs

N. Yokoyama, S. Ohkawa, T. Sakurai, T. Furuya, and H. Ishikawa

Appl. Phys. Lett. 28, 405 (1976); http://dx.doi.org/10.1063/1.88777 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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GaAs substrates were implanted with sulfur at 100, 200, 300 °C, and at room temperature and annealed at 800 °C with SiO2 or Si3N4 protective layers. The density and activation energy of deep traps in the implanted layers were determined from transient capacitance measurements. It is found that implantation at 200 °C and annealing with a Si3N4 film as a protective layer yields the lowest trap density in the implanted layer.
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61.72.U- Doping and impurity implantation
78.40.Fy Semiconductors

Stimulated electron tunneling in metal‐barrier‐metal structures due to surface plasmons

D. P. Siu, R. K. Jain, and T. K. Gustafson

Appl. Phys. Lett. 28, 407 (1976); http://dx.doi.org/10.1063/1.88778 (4 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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It is shown that electron tunneling can be stimulated by electron–plasmon–virtual photon interactions. Negative differential resistance exhibiting a threshold voltage and current density is expected for metal‐barrier‐metal structures.
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73.40.Gk Tunneling
73.40.Rw Metal-insulator-metal structures
73.40.Jn Metal-to-metal contacts
78.40.Kc Metals, semimetals, and alloys

Correlation between critical temperature and other electrical properties for thin tantalum films

R. M. Aguado Bombin and W. E. J. Neal

Appl. Phys. Lett. 28, 410 (1976); http://dx.doi.org/10.1063/1.88779 (1 page) | Cited 1 time

Online Publication Date: 28 August 2008

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Measurements on thin tantalum films prepared by evaporation in ultrahigh vacuum show definite correlation between the critical temperature (Tc) and resistivity ratio (ρ300/ρ10). Empirical relationships are given for films having resistivity ratios in the range 1.2–6 corresponding to a thickness range 11⋅5–965 nm.
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74.78.-w Superconducting films and low-dimensional structures
73.61.At Metal and metallic alloys
74.70.-b Superconducting materials other than cuprates
74.10.+v Occurrence, potential candidates
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