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15 Apr 1976

Volume 28, Issue 8, pp. 415-469


InP epitaxial thin‐film formation by planar reactive deposition

L. M. Fraas, K. Zanio, and M. Shibata

Appl. Phys. Lett. 28, 415 (1976); http://dx.doi.org/10.1063/1.88802 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Complete InP epitaxy on GaAs and twinned InP epitaxy on CdS were achieved below 390 °C by planar reactive deposition (PRD). In this technique, indium metal is evaporated from a planar source with an integral cavity into which PH3 gas is introduced and decomposed. The decomposition reaction products, P2 and H2, are emitted from within the source cavity through a perforated top plate and the combined In, P2, and H2 vapor stream on arrival at the substrate forms InP films. High‐energy electron diffraction and SEM measurements show the crystallographic quality of the resultant films to be limited by the substrate quality.
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84.60.Jt Photoelectric conversion
68.55.-a Thin film structure and morphology
81.20.-n Methods of materials synthesis and materials processing

Effect of light illumination on CdS‐LiNbO3 convolver and relation to the photoconductivity spectrum

Z. Ueda, J. Shirafuji, and Y. Inuishi

Appl. Phys. Lett. 28, 418 (1976); http://dx.doi.org/10.1063/1.88803 (2 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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The effect of light illumination on CdS‐LiNbO3 convolvers at 77 K and room temperature is investigated. The spectral response of the convolution output is closely connected with the photoconductivity spectrum, and at 77 K three exciton lines are clearly observed in the spectrum of the convolution output. Whether the convolution output is enhanced or quenched under illumination depends on the magnitude of the surface barrier of the semiconductor. The results are qualitatively explained on the basis of the increase in carrier density near the semiconductor surface by the light illumination.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
72.40.+w Photoconduction and photovoltaic effects
85.60.-q Optoelectronic devices

Surface acoustic wave reflective dot array (RDA)

Leland P. Solie

Appl. Phys. Lett. 28, 420 (1976); http://dx.doi.org/10.1063/1.88804 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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A new type of reflective array device is described in which the array of reflecting grooves is replaced by an array of reflecting metallic dots. This reflective dot array or RDA has the principal advantage of being part of the same mask and metalization as the transducers allowing single‐step fabrication. A bandpass filter operating at 213 MHz with a bandwidth of 6 MHz, which was fabricated using this technique, has a passband‐to‐sidelobe ratio of nearly 60 dB.
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43.60.+d Acoustic signal processing
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Characteristics of a water absorber in front of a silicon solar cell

Terry I. Chappell and Richard M. White

Appl. Phys. Lett. 28, 422 (1976); http://dx.doi.org/10.1063/1.88805 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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In a system for converting sunlight to both electric power and heat, a selective absorber between the sun and a semiconductor solar cell may provide a substantial thermal output without seriously reducing the electrical output. Calculations for water in front of a typical silicon solar cell show, for example, that a water layer 1 cm thick absorbs 16.3% of the incident energy (chiefly photons having energies below the energy gap of silicon) while reducing the electric power output only slightly, from 13.8 to 13.1%. Experimental results confirm this finding.
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84.60.Jt Photoelectric conversion

Foil scattering in a reflex triode intense ion beam accelerator

Thomas M. Antonsen and Edward Ott

Appl. Phys. Lett. 28, 424 (1976); http://dx.doi.org/10.1063/1.88806 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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The electron and ion current densities flowing in a reflex triode are calculated. Our analysis self‐consistently determines the electron distribution function resulting from electron collisions with a foil anode and the potential in the triode. The electron and ion currents diverge for a sufficiently thin anode.
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52.75.-d Plasma devices
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.55.-s Magnetic confinement and equilibrium

Parametric study of the current induced in a CO2 laser plasma

M. G. Drouet and H. Pépin

Appl. Phys. Lett. 28, 426 (1976); http://dx.doi.org/10.1063/1.88808 (3 pages) | Cited 25 times

Online Publication Date: 28 August 2008

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The current generated during the interaction of a focused 10.6‐μm CO2 nanosecond laser pulse with a copper target was measured as a function of laser power—up to 2.5 GW—and of the background nitrogen pressure from 10−5 to 103 Torr. Current distribution at the target was measured. The results show a resonance effect at 10−2 Torr with a total current flow of 250 kA.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Ds Electric and magnetic measurements

Scattering of electromagnetic waves from a rough surface

C. C. Sung and J. A. Holzer

Appl. Phys. Lett. 28, 429 (1976); http://dx.doi.org/10.1063/1.88809 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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The average irradiance of reflected electromagnetic waves from a Gaussian rough surface is calculated exactly without the conventional small‐slope or stationary‐phase approximation. Numerical results for the one‐dimensional problem are presented and compared with previous calculations.
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42.25.Fx Diffraction and scattering
84.40.Ba Antennas: theory, components and accessories

Vacancies and vacancy clusters in shock‐loaded molybdenum: Direct observations by transmission electron and field‐ion microscopy

L. E. Murr, O. T. Inal, and A. A. Morales

Appl. Phys. Lett. 28, 432 (1976); http://dx.doi.org/10.1063/1.88810 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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A novel experimental sandwich arrangement of molybdenum thin sheets and wires was shock‐loaded at a pressure of 150 kbar (for 2 μsec), and thin foils and emission end forms prepared from these samples were simultaneously examined by transmission electron and field‐ion microscopy, respectively. Dislocation loop densitis were observed to be 5×109 cm−3 in the annealed foil samples as compared with 4×1014 cm−3 in the shock‐loaded foil samples, and 75% of the loop types analyzed were vacancy. The direct measurement of vacancy density in the field‐ion microscope revealed twice as many vacancies (including aggregates) in the shock‐loaded wires as compared with the annealed unshocked wires.
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62.50.-p High-pressure effects in solids and liquids
61.72.Lk Linear defects: dislocations, disclinations
61.72.jd Vacancies
61.72.jj Interstitials

Nd‐glass thin‐film waveguide: An active medium for Nd thin‐film laser

Bor‐Uei Chen and C. L. Tang

Appl. Phys. Lett. 28, 435 (1976); http://dx.doi.org/10.1063/1.88811 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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We report the optical properties, fluorescence lifetime, and method of fabrication of very low‐loss and high‐optical‐quality Nd‐glass thin films. Substantial optical gain due to stimulated emission in such thin films is obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
78.20.-e Optical properties of bulk materials and thin films

Optical second harmonic generation in periodic multilayer GaAs‐Al0.3Ga0.7As structures

J. P. van der Ziel and M. Ilegems

Appl. Phys. Lett. 28, 437 (1976); http://dx.doi.org/10.1063/1.88789 (3 pages) | Cited 58 times

Online Publication Date: 28 August 2008

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Using a tunable laser operating near 2 μm we have observed second harmonic generation in a GaAs‐Al0.3Ga0.7As multilayer. Phase matching of the backward‐traveling harmonic wave is observed and corresponds to k2=2(k1−κ) <0 where k1<κ/2 and κ is the wave vector of the periodic structure.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Ci Filters, zone plates, and polarizers

Thin‐film conducting microgrids as transparent heat mirrors

John C. C. Fan, Frank J. Bachner, and R. A. Murphy

Appl. Phys. Lett. 28, 440 (1976); http://dx.doi.org/10.1063/1.88790 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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A new type of transparent heat mirror for solar‐energy applications has been fabricated by chemically etching a Sn‐doped In2O3 film to form a transparent conducting microgrid. For square openings 2.5 μm on a side, separated by lines 0.6 μm wide, the solar transmission increases from 0.8 for the original continuous film to 0.9 for the microgrid. Although 65% of the area of the film is removed by etching, the infrared reflectivity decreases by only 9%, from 0.91 to 0.83. A smaller decrease in the infrared reflectivity may be possible if materials with higher optical conductivity are used.
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84.60.-h Direct energy conversion and storage
78.20.-e Optical properties of bulk materials and thin films
84.40.Ba Antennas: theory, components and accessories

Time‐resolved pump depletion in n‐InSb Raman spin‐flip laser

C. D. Cantrell, J. F. Figueira, J. F. Scott, and Marlan O. Scully

Appl. Phys. Lett. 28, 442 (1976); http://dx.doi.org/10.1063/1.88791 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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Analysis of the transient depletion of a 10.6‐μm laser beam in n‐InSb at 2 K observed by Figueira, Cantrell, Rink, and Forman shows that the observed depletion is not due to causes such as lattice heating, depletion by other nonlinear processes, or optical damage. Simple estimates are presented which show that a 10.6‐μm laser pulse of the intensity and duration of that used by Figueira et al. will heat the conduction electrons very strongly, leading to a transient increase in carrier concentration and conductivity, and a corresponding increase in optical absorption.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Boron fluoride and aluminum fluoride infrared lasers from quasicontinuous supersonic mixing flames

W. W. Rice, W. H. Beattie, R. C. Oldenborg, S. E. Johnson, and P. B. Scott

Appl. Phys. Lett. 28, 444 (1976); http://dx.doi.org/10.1063/1.88792 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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Laser action has been observed from the chemical reaction of fluorine injected into supersonic flows of boron and aluminum atoms. The laser output in the 12.8–20‐μm region (AlF) is temporally different from that in the 6.1–13‐μm region (BF), but both have pulse durations 103–104 longer than any of the previously reported metal atom oxidation lasers.
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78.60.Ps Chemiluminescence
42.55.Lt Gas lasers including excimer and metal-vapor lasers
FREE

High mass resolution with a new variable anharmonicity Penning trap

R. S. Van Dyck, D. J. Wineland, P. A. Ekstrom, and H. G. Dehmelt

Appl. Phys. Lett. 28, 446 (1976); http://dx.doi.org/10.1063/1.88793 (3 pages) | Cited 45 times

Online Publication Date: 28 August 2008

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A modified Penning trap has been developed and shown to yield 100 times narrower axial resonance linewidths on electrons than that of a previous unmodified Penning trap. An extra pair of electrodes is inserted in the standard trap configuration, which effectively nulls the quartic term in the trapping potential. With existing signal‐to‐noise limitations, an axial frequency resolution of 0.02 ppm can be obtained. This device is particularly attractive to high‐resolution mass spectrometry.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
07.75.+h Mass spectrometers

High‐efficiency four‐wave sum mixing in magnesium at 140 nm

Stephen C. Wallace and G. Zdasiuk

Appl. Phys. Lett. 28, 449 (1976); http://dx.doi.org/10.1063/1.88794 (3 pages) | Cited 55 times

Online Publication Date: 28 August 2008

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In magnesium, bound‐continuum matrix elements contribute constructively to the magnitude of the third‐order nonlinear susceptibility χ(3ω)(3) for sum‐frequency mixing in the region of the first continuum. Thus, continuously tunable harmonic radiation in the region 140–160 nm (9000 cm−1) can be readily obtained with two dye lasers of modest power. The onset of saturation in the vacuum ultraviolent intensity at 1436 nm was not observed until incident powers ⩾30 kW, where the measured power conversion efficiency was 0.2%.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
33.20.Ni Vacuum ultraviolet spectra
42.72.-g Optical sources and standards

Subresolution imaging: Use of wavelength and angular diversity techniques

Atul Jain

Appl. Phys. Lett. 28, 451 (1976); http://dx.doi.org/10.1063/1.88795 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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We calculate the Fourier transform of the electric field at a point on the image of an object as the angle or wavelength of the illumination on the object is varied and show that this function provides a direct measurement of the amplitude and surface height structure of the object within the resolution cell centered at the corresponding point on the object.
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42.30.-d Imaging and optical processing
07.60.Pb Conventional optical microscopes
95.55.-n Astronomical and space-research instrumentation
42.25.Hz Interference

Motion of p‐n junctions in CuInSe2

B. Tell, Sigurd Wagner, and P. M. Bridenbaugh

Appl. Phys. Lett. 28, 454 (1976); http://dx.doi.org/10.1063/1.88796 (2 pages) | Cited 16 times

Online Publication Date: 28 August 2008

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We report the first p‐n junction delineation and diffusion study in a ternary chalcopyrite‐type semiconductor. p‐n junctions were formed in Zn‐ or Cd‐plated p‐CuInSe2 by 5‐min anneals at 200–450 °C. By means of angle lapping and staining techniques, junction depths xj varying from ∼1 μm to ∼130 μm were determined. These measurements yield the relationship lnxj (μm) =14.31−6900/T (K). The interdiffusion coefficient derived from xj is D (cm2/sec) =164 exp[−1.19 (eV)/kT]. The large preexponential term indicates concentrations or mobilities of point defects substantially above those of the related II‐VI compounds.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects

Low‐loss AlxGa1−xAs waveguides grown by molecular beam epitaxy

J. L. Merz and A. Y. Cho

Appl. Phys. Lett. 28, 456 (1976); http://dx.doi.org/10.1063/1.88797 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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Low‐loss AlxGa1−xAs waveguides with x=0.1 and x=0.25 have been fabricated by molecular beam epitaxy. Losses are determined for both n‐ and p‐type waveguides using a combination of Raman scattering and transmission measurements. These waveguides have optical losses ⩽1.5 cm−1 between 1.1 and 1.4 eV, the energy of the GaAs double heterostructure laser, and are comparable to similar waveguide structures grown by liquid phase epitaxy.
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42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology
78.20.-e Optical properties of bulk materials and thin films

Velocity‐field relationship of InAs‐InP alloys including the effects of alloy scattering

J. R. Hauser, M. A. Littlejohn, and T. H. Glisson

Appl. Phys. Lett. 28, 458 (1976); http://dx.doi.org/10.1063/1.88798 (4 pages) | Cited 44 times

Online Publication Date: 28 August 2008

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The drift velocity–electric field relationship for the ternary alloy InAs1−xPx has been studied by the Monte Carlo methd. Random potential alloy scattering has been included in the calculations, along with polar optical scattering, intervalley scattering, acoustic scattering, piezoelectric scattering, and ionized impurity scattering. The low‐field electron mobility has also been calculated throughout the compositional range for the alloy.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

First‐order interaction force between a dislocation loop and flux line lattice in a type‐II superconductor

C. S. Pande

Appl. Phys. Lett. 28, 462 (1976); http://dx.doi.org/10.1063/1.88799 (2 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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Exact analytical expressions are obtained for the elementary first‐order (ΔV) interaction force between a dislocation loop and flux line lattice in a type‐II superconductor, using the stress field of the flux line lattice. The interaction force initially increases as the square of loop radius R, but as R is increased further it has the periodicity of a Bessel function of first order, i.e., J1.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
61.80.-x Physical radiation effects, radiation damage
61.72.Lk Linear defects: dislocations, disclinations

Investigation of the training problem of superconducting magnets

Curt Schmidt

Appl. Phys. Lett. 28, 463 (1976); http://dx.doi.org/10.1063/1.88800 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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The behavior of superconducting NbTi wires under dynamic mechanical stress was investigated. Instabilities on the stress‐strain curve (serrated yielding) were found connected with local transition into the normal state. With applied field and transport current, NbTi conductors with and without copper matrix showed a training behavior. This means that the normal transitions occurred at successively higher stress levels. Mechanisms proposed so far, such as serrated yielding of NbTi or deformation of the copper matrix in compound conductors, do not seem to explain the training of superconducting magnets.
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85.25.-j Superconducting devices
74.70.-b Superconducting materials other than cuprates

Domain wall image contrast in the SEM

D. C. Joy, H. J. Leamy, S. D. Ferris, H. Yakowitz, and D. E. Newbury

Appl. Phys. Lett. 28, 466 (1976); http://dx.doi.org/10.1063/1.88801 (2 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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Contrast from domain walls in materials with cubic magnetic anisotropy has been observed in scanning electron microscope (SEM) images. This contrast, which is visible in both the backscattered and absorbed current images, with normal electron beam incidence arises from the interaction of the convergent incident electron beam with the domains on either side of the wall.
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75.60.Ch Domain walls and domain structure
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Signal saturation effects in photoacoustic spectroscopy with applicability to solid and liquid samples

John F. McClelland and Richard N. Kniseley

Appl. Phys. Lett. 28, 467 (1976); http://dx.doi.org/10.1063/1.88807 (3 pages) | Cited 30 times

Online Publication Date: 28 August 2008

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A simple model of the interaction between the optical and thermal properties of the sample is shown to predict signal saturation in photoacoustic spectroscopy in excellent agreement with measurements on a methylene blue dye solution. The measured onset of signal saturation as a function of the absorption is accurately predicted by the model from the sample’s thermal properties. The effect of light reflection by the sample on the photoacoustic signal is discussed.
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07.60.Rd Visible and ultraviolet spectrometers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
87.80.-y Biophysical techniques (research methods)
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