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15 Dec 1976

Volume 29, Issue 12, pp. 761-822


Monolithic mosaic transducer utilizing trapped energy modes

H. F. Tiersten, J. F. McDonald, and P. K. Das

Appl. Phys. Lett. 29, 761 (1976); http://dx.doi.org/10.1063/1.88939 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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A transducer array consisting of a large number of separated sets of electrodes plated on a single piezoelectric plate of uniform thickness is described. Each set of electrodes is made to act essentially independently by placing them sufficiently far apart and employing an essentially trapped energy mode. Experimental results obtained with a linear array on PZT‐7A show that the isolation is very good over a bandwidth of about 14%, close to the calculated bandwidth of 12.8%.
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07.07.Mp Transducers
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Change in the energy gap caused by acoustic domains in CdS

Tomonobu Hata, Tsutomu Hara, and Toshio Hada

Appl. Phys. Lett. 29, 763 (1976); http://dx.doi.org/10.1063/1.88940 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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This paper shows that tha altered energy gap caused by the acoustic domains in CdS lies between the fundamental optical band gaps e⊥c and e∥c (e: polarization of the incident light; c: c axis of the crystal). The experimental results take into account the errors for both the finite beam diameter and the rotation of polarization of incident light due to scattering.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
42.79.Hp Optical processors, correlators, and modulators

Nucleation of stacking faults at oxide precipitate‐dislocation complexes in silicon

T. Y. Tan, L. L. Wu, and W. K. Tice

Appl. Phys. Lett. 29, 765 (1976); http://dx.doi.org/10.1063/1.88941 (3 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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Nucleation sites of thermal oxidation‐induced stacking faults in Czochralski‐grown silicon crystals have been studied by transmission electron microscopy. Such sites are commonly found to consist of oxide precipitate‐dislocation complexes, which appear as center etch pits in line figures delineating faults in optical observations. Embryonic faults were detected in these complexes. These results are strong evidence that stacking faults in silicon result from dissociation of (1/2) 〈110〉 dislocations on a sessile {111} plane.
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61.72.Nn Stacking faults and other planar or extended defects
61.72.Cc Kinetics of defect formation and annealing
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
64.75.-g Phase equilibria

Independent fourth‐order elastic coefficients for quartz

Xanthippi Markenscoff

Appl. Phys. Lett. 29, 768 (1976); http://dx.doi.org/10.1063/1.88942 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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The eighth‐order tensors invariant under the transformations corresponding to the point groups 32, 3m, and 3m (trigonal system) are obtained and the list of the independent fourth‐order elastic coefficients is presented.
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62.20.D- Elasticity
61.50.-f Structure of bulk crystals

Planar and axial channeling of 800‐keV As in 〈110〉 silicon

R. G. Wilson

Appl. Phys. Lett. 29, 770 (1976); http://dx.doi.org/10.1063/1.88943 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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We believe that we have observed planar channeling of As in the open {112} plane of Si by measurement of the depth distribution of electrically active As implanted in Si at 800 keV. The assumed planar‐channeled distribution is sharply peaked and is found for ions directed 0.55 ° away from the 〈110〉 axis in the direction of the {112} plane. This distribution occurs 2.6 μm in depth with a FWHM of only 800 Å and contains 3% of the total 1.5×1012 cm−2 implanted As ions. The corresponding sharply peaked 〈110〉 axial‐channeled As distribution occurs 5.5 μm in depth with a FWHM of 0.40 μm and contains 28% of the implanted As ions. The axial‐channeling distribution degrades as the angle away from the 〈110〉 axis increases until at 0.55° the planar‐channeling distribution occurs abruptly and the axial‐channeling distribution nearly disappears. The electronic stopping power of Si for 800‐keV As ions in the {112} plane is determined to be 1.05×10−13 cm2 eV from these data and from accurately channeled (by Rutherford backscattering) As ion ranges measured in Si from 10 to 800 keV. While the axial‐channeled distribution is skewed toward the surface, the planar‐channeled distribution does not appear to be skewed.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Interdiffusion mechanisms in Ag‐Au thin‐film couples

R. G. Kirsch, J. M. Poate, and M. Eibschutz

Appl. Phys. Lett. 29, 772 (1976); http://dx.doi.org/10.1063/1.88944 (4 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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The roles of grain‐boundary and bulk diffusion in thin‐film couples of Ag‐Au have been elucidated by comparing interdiffusion profiles in single‐crystal and polycrystalline couples. The use of self‐supporting couples, and Rutherford backscattering for depth analysis, greatly simplify interpretation of the data. Room‐temperature grain‐boundary diffusion is observed in polycrystalline couples with a diffusion coefficient ∼−1014 cm2 sec−1. On annealing these polycrystalline films, at temperatures ⩽400 °C, an initial fast interdiffusion is observed followed by a slower process; models for this behavior are presented.
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66.30.J- Diffusion of impurities
68.55.-a Thin film structure and morphology

Phase‐matched second harmonic generation in a periodic GaAs waveguide

J. P. van der Ziel, M. Ilegems, P. W. Foy, and R. M. Mikulyak

Appl. Phys. Lett. 29, 775 (1976); http://dx.doi.org/10.1063/1.88945 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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Using a tunable laser operating near 2 μm, second harmonic generation was observed in a GaAs waveguide having a grating etched in one interface. Phase matching occurs when β2−2β1−ϑ=0, where ϑ=2π/Λ is the wave vector of the grating of period Λ and β1 and β2 are the fundamental and harmonic wave vectors.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

Thermally activated trapping in Fe‐doped LiNbO3

A. Zylbersztejn

Appl. Phys. Lett. 29, 778 (1976); http://dx.doi.org/10.1063/1.88946 (3 pages) | Cited 19 times

Online Publication Date: 28 August 2008

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Small polaron formation in LiNbO3 is shown to cause thermally activated electron capture on deep impurities. The activation energy for carrier trapping is calculated by using a simple model, which takes into account ionic relaxation for both the impurity and the lattice. The calculation predicts an activation energy for thermal decay of an excess Fe2+ population which agrees with experiment.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.38.-k Polarons and electron-phonon interactions

16 μ and 8.5 μ generated via stimulated Raman process in potassium vapor

R. T. V. Kung and I. Itzkan

Appl. Phys. Lett. 29, 780 (1976); http://dx.doi.org/10.1063/1.88938 (4 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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16‐μ and 8.5‐μ tunable lasing outputs were obtained from two sequential stimulated Raman scattering processes in K vapor using two visible dye lasers concurrently. Greater than 10 mW of 16‐μ output was obtained for a 1‐kW pump power. Tuning range of 2–4 cm−1 was observed. Kinetic information on the quenching of the 4P levels of K was deduced from the 16‐μ signal amplitudes as a function of the delay time between the two lasers.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.-r Atomic spectra
32.50.+d Fluorescence, phosphorescence (including quenching)

Mechanisms of the plasma spatial filter for high‐power lasers

C. E. Max, W. C. Mead, and J. J. Thomson

Appl. Phys. Lett. 29, 783 (1976); http://dx.doi.org/10.1063/1.88947 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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We describe mechanisms operating in the plasma spatial filter. Curvature of the critical density surface of the blow‐off plasma causes high and intermediate spatial frequencies on the incoming laser beam to be rejected. In addition, time‐dependent plasma motions result in the masking of high spatial frequency information on a time‐integrated near‐field photograph of the beam. Effects on the spectrum of the reflected laser light are evaluated.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.79.Ci Filters, zone plates, and polarizers

Excimer emission band at 235.5 nm in the XeCl molecule

R. Shuker

Appl. Phys. Lett. 29, 785 (1976); http://dx.doi.org/10.1063/1.88948 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Band emission at 235.5 nm is observed in fast discharge in a Xe/Cl2 mixture at low pressure. This emission has the same spectral width as that of the excimer 2Σ+1/2→ 2Σ+1/2 transition at 307 nm. It is suggested that this band is also due to bound‐free transitions, but belongs to the spin‐orbit split level 2Π state of the ionic XeCl molecule that correlates with Xe+(2P1/2) and Cl−(1S). The molecular energy gap between 2Σ+1/2 and 2Π1/2 is almost equal to the atomic spin‐orbit splitting and their potential curves are very similar. This bound‐free 2Π1/2→2Σ+1/2 emission may be an excimer laser candidate.
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31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)
33.70.Jg Line and band widths, shapes, and shifts
32.30.Jc Visible and ultraviolet spectra

Shift and broadening of saturated absorption resonances due to curvature of the laser wave fronts

J. L. Hall and C. J. Bordé

Appl. Phys. Lett. 29, 788 (1976); http://dx.doi.org/10.1063/1.88949 (3 pages) | Cited 34 times

Online Publication Date: 28 August 2008

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Using frequency offset‐locked spectroscopy of methane at 3.39 μm we show that the saturated absorption peaks can be significantly blue or red shifted if the wave fronts of the laser beam are spherical in the gas cell. Good agreement with theoretical prediction is found. We discuss suitable conditions to avoid this geometry‐induced shift in optical frequency standards.
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33.70.Jg Line and band widths, shapes, and shifts
33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
07.60.Rd Visible and ultraviolet spectrometers

Active branching waveguide modulator

W. K. Burns, A. B. Lee, and A. F. Milton

Appl. Phys. Lett. 29, 790 (1976); http://dx.doi.org/10.1063/1.88950 (3 pages) | Cited 26 times

Online Publication Date: 28 August 2008

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We report the observation of electrically controlled modulation in a single‐mode channel waveguide branch fabricated on Ti‐diffused LiNbO3. Over 55% intensity modulation has been observed for applied voltages of ±30 V with an active length of 2.9 mm. Experimental factors limiting device performance are discussed. A theoretical description of the device, based on power transfer between local normal modes, is presented and shown to be consistent with experimental results when sideways diffusion in the channels is approximately accounted for.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers

Observation of bulk waves in surface acoustic wave device by frequency‐shift holography

Takao Chiba and Yuji Togami

Appl. Phys. Lett. 29, 793 (1976); http://dx.doi.org/10.1063/1.88951 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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The radiation patterns of bulk waves generated by an interdigital transducer and their reflection patterns at the bottom plane of a Y‐cut Z‐propagating LiNbO3 have been observed clearly on the crystal using a frequency‐shift‐holography method. The effects of polarization of the observing light of this method and the effect of roughing the bottom plane of the crystal have been studied.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
42.40.Kw Holographic interferometry; other holographic techniques
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

High cw power ultraviolet generation from wall‐confined noble gas ion lasers

Tjiaw Khim Tio, Hann Hua Luo, and Shao‐Chi Lin

Appl. Phys. Lett. 29, 795 (1976); http://dx.doi.org/10.1063/1.88952 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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cw ultraviolet laser output of up to 16 W from the 3511‐ and 3638‐Å lines of Ar III, 6.7 W from the 3507‐ and 3564‐Å lines of Kr III, and 1.8 W from the 3746‐ and 3781‐Å lines of Xe III have been observed in purely wall‐confined noble gas discharges. The current density dependence of laser output from these doubly‐ionized species is found to be extremely strong but consistent with our theoretical predictions. The maximum observed output of 16 W from Ar III so far, however, is only limited by rapid optical degradation of the uv cavity mirrors.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Production of large warm plasmas by staged laser heating of solid targets

J. R. Greig and R. E. Pechacek

Appl. Phys. Lett. 29, 798 (1976); http://dx.doi.org/10.1063/1.88953 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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We have shown that it is possible to create a warm plasma (kTi∼50 eV) containing in excess of 1019 electrons using multistage laser heating of a solid target. The target was first irradiated by ∼‐10 J Nd/glass laser prepulse, then 600 nsec later by the ∼90 J Nd/glass main pulse. After a delay of ∼4.0 μsec, the mostly un‐ionized cloud of target material so created was ionized and heated by irradiation with ≳300 J from a CO2 laser pulse.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

A new method for the efficient interconnection of high‐index planar waveguides to low‐index transitional waveguides

B. L. Sopori, W. S. C. Chang, and C. M. Phillips

Appl. Phys. Lett. 29, 800 (1976); http://dx.doi.org/10.1063/1.88954 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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An efficient method for interconnecting two planar optical waveguides on the same substrate is described. Efficiencies better than 80% have been obtained in coupling from high‐index GaAs and LiNbO3 waveguides to low‐index AZ 1350 and polyurethane waveguides. This method is important for the coupling of high‐index waveguides to optical fibers.
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42.82.-m Integrated optics
42.81.-i Fiber optics
42.79.Gn Optical waveguides and couplers

An electro‐optic technique for display and shaping of subnanosecond laser pulses

G. A. Massey and R. A. Elliott

Appl. Phys. Lett. 29, 802 (1976); http://dx.doi.org/10.1063/1.88955 (3 pages)

Online Publication Date: 28 August 2008

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We analyze a focusing interaction between a parabolic voltage pulse traveling in a transmission line filled with nonlinear dielectric and a laser pulse which crosses the guide at right angles. In this interaction the voltage pulse, which is about 1 nsec in duration, creates an effective cylindrical lens that moves across the optical wave front with a velocity greater than 109 cm/sec. The light is imaged by this disturbance to a focal spot which translates at the same velocity, producing the effect of a streak camera without the necessity of a photocathode and electron deflection. By placing a spatial filter, rather than a detector array, in the focal plane, subnanosecond shaping or gating of the input pulse can be achieved very simply.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Hp Optical processors, correlators, and modulators

100‐ps pulse generation and amplification in the iodine laser

E. Fill, K. Hohla, G. T. Schappert, and R. Volk

Appl. Phys. Lett. 29, 805 (1976); http://dx.doi.org/10.1063/1.88956 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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We have generated 100–200‐ps iodine 1.315‐μ laser pulses by means of the free induction decay (FID) technique. A 2.5‐ns switched‐out pulse from a mode‐locked oscillator is truncated by generating its own gas breakdown in the focal spot between two lenses and then passed through a hot I2 absorber operated in the small‐signal regime to generate a short FID pulse. Streak camera studies of such pulses showed that the breakdown time was about 40 ps and the FID pulses had a full width at half‐maximum of about 100–200 ps. Subsequent amplification of a pulse showed that the 4‐GHz bandwidth of the atmospheric pressure iodine amplifier was insufficient to cover the pulse spectrum. A calculation of the pulse width based on the reduction of the small‐signal gain due to such spectral considerations also gave pulse widths in the 100–200‐ps range.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.62.-b Laser applications
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

cw room‐temperature InxGa1−xAs/InyGa1−yP 1.06‐μm lasers

C. J. Nuese, G. H. Olsen, M. Ettenberg, J. J. Gannon, and T. J. Zamerowski

Appl. Phys. Lett. 29, 807 (1976); http://dx.doi.org/10.1063/1.88957 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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Room‐temperature cw laser operation at wavelengths between 1.06 and 1.12 μm has been obtained from double‐heterojunction structures of InxGa1−xAs/InyGa1−yP prepared by vapor‐phase epitaxy. These devices have pulsed threshold current densities as low as 1000 A/cm2 and external differential quantum efficiencies as high as 55%. Their active laser cavities are between 0.14 and 0.36 μm thick, providing fundamental transverse‐mode operation with far‐field patterns 50 to 60° wide.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.81.-i Fiber optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Multifilamentary Nb‐Nb3 (Al,Ge) superconductors

M. R. Pickus, M. P. Dariel, J. T. Holthuis, J. Ling‐Fai Wang, and J. Granda

Appl. Phys. Lett. 29, 810 (1976); http://dx.doi.org/10.1063/1.88958 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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Multifilamentary Nb‐Nb3 (Al,Ge) superconductors were prepared using an infiltration process. The critical temperature of sample diffusion reacted in the 1250–1700 °C temperature interval ranged from 16 to 19.0 °K. A critical current density of 105 A/cm2 at 50 kOe was observed for samples reacted at lower temperatures.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents

Comparison of bubble wall state stability observed in (YSmCa)3(GeFe)5O12 and (YEu)3(GaFe)5O12 garnets

B. R. Brown and T. Hsu

Appl. Phys. Lett. 29, 813 (1976); http://dx.doi.org/10.1063/1.88959 (2 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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Measurements of S‐state stability during translational motion show that bubble wall states in 5–6‐μm YSmCaGeFeO films are stable at drive gradients more than double that in YEuGaFeO films. The increased stability is believed to result from greater damping and exchange energy in the YSmCaGe garnet.
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75.60.Ch Domain walls and domain structure

(110) bubble garnet films with growth‐induced orthorhombic anisotropy

R. Wolfe, R. C. LeCraw, S. L. Blank, and R. D. Pierce

Appl. Phys. Lett. 29, 815 (1976); http://dx.doi.org/10.1063/1.88960 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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Garnet films of compositions (EuLaCa)3 (FeGeAl)5O12 which support magnetic bubbles have been grown by liquid phase epitaxy on (110), (111), and (100) substrates of Nd3Ga5O12. In each material, La plus Eu provides the growth‐induced uniaxial anisotropy in (100) films, Ca plus Eu in (111) films, and the combination provides a normal easy axis as well as in‐plane anisotropy in (110) films. General conditions for achieving stable bubbles and large in‐plane anisotropy in (110) films are discussed in terms of the phenomenological theory of growth‐induced plus stress‐induced anisotropy.
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75.60.Ch Domain walls and domain structure
75.30.Gw Magnetic anisotropy

Increased domain wall velocities due to an orthorhombic anisotropy in garnet epitaxial films

W. T. Stacy, A. B. Voermans, and H. Logmans

Appl. Phys. Lett. 29, 817 (1976); http://dx.doi.org/10.1063/1.88961 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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Magnetic domain wall velocities are compared for (Eu,Lu)3 (Fe,Al)5O12 films grown on (110) and (111) Gd3Ga5O12 substrates. The (110) films have an orthorhombic anisotropy which is partly stress induced and partly growth induced; the (111) films are uniaxial. Wall velocities approaching 500 m/sec have been measured in the orthorhombic films while the (111) films exhibit a maximum velocity of ∼5 m/sec. The results are compared with theoretical limiting velocities.
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75.60.Ch Domain walls and domain structure
75.30.Gw Magnetic anisotropy

Effect of He ion implantation on the domain structure of evaporated single‐crystal Ni thin films viewed by Lorentz electron microscopy

G. R. Proto and K. R. Lawless

Appl. Phys. Lett. 29, 819 (1976); http://dx.doi.org/10.1063/1.88962 (4 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Large dosages of He ions are shown to produce stripe domains in single‐crystal Ni films. This effect is tentatively ascribed to the presence of ion‐implantation‐induced planar stresses which act through the inverse magnetostriction to oppose the shape anisotropy energy.
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75.60.Ch Domain walls and domain structure
75.50.Cc Other ferromagnetic metals and alloys
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
61.72.U- Doping and impurity implantation
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