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1 Jul 1976

Volume 29, Issue 1, pp. 1-65

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Orientation dependence of lattice strain in silicon epitaxial wafers

Minoru Mihara, Tohru Hara, Masayuki Arai, Masato Nakajima, and Suguru Nakamura

Appl. Phys. Lett. 29, 1 (1976); http://dx.doi.org/10.1063/1.88879 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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Lattice strain due to boron in silicon epitaxial wafers has been measured by the x‐ray double‐crystal technique. It is found that the lattice strain depends on the crystal orientation and that the strain for (100) is about 1.3 times larger than that for (111). The results for (111) lead to a lattice contraction coefficient for boron β=8×10−24 cm3/atom, which is 1.5–4 times larger than previous values obtained with diffused (111) wafers.
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61.05.C- X-ray diffraction and scattering
61.72.U- Doping and impurity implantation
68.60.-p Physical properties of thin films, nonelectronic

Improved cw laser penetration of solids using a superimposed pulsed laser

James E. Robin and Paul Nordin

Appl. Phys. Lett. 29, 3 (1976); http://dx.doi.org/10.1063/1.88864 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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The enhancement of cw laser melt‐through of solids resulting from melt removal produced by a blowoff impulse generated by short superimposed laser pulses is investigated. A simple model is used to develop an expression for the minimum impulse criteria.
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79.20.Ds Laser-beam impact phenomena
42.62.-b Laser applications
64.70.D- Solid-liquid transitions

The use of intense ion beams for heating long ϑ‐pinch plasmas to thermonuclear temperatures

Edward Ott and R. N. Sudan

Appl. Phys. Lett. 29, 5 (1976); http://dx.doi.org/10.1063/1.88874 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Motivated by recent advances in the production of intense ion beams, we consider the possible utility of such beams for heating a long thin ϑ‐pinch plasma to thermonuclear temperatures. It is found that ion beams offer an alternative to previously proposed schemes utilizing CO2 laser beams and intense relativistic electron beams.
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52.50.Gj Plasma heating by particle beams
28.52.-s Fusion reactors

Electron distribution function in electron‐beam‐excited plasmas

C. A. Brau

Appl. Phys. Lett. 29, 7 (1976); http://dx.doi.org/10.1063/1.88885 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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In monatomic plasmas excited by high‐intensity relativistic electron beams, the electron secondary distribution function is dominated by elastic electron‐electron collisions at low electron energies and by inelastic electron‐atom collisions at high electron energies (above the excitation threshold). Under these conditions, the total rate of excitation by inelastic collisions is limited by the rate at which electron‐electron collisions relax the distribution function in the neighborhood of the excitation threshold. To describe this effect quantitatively, an approximate analytic solution of the electron Boltzmann equation is obtained, including both electron‐electron and inelastic collisions. The result provides a simple formula for the total rate of excitation.
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52.40.Mj Particle beam interactions in plasmas
52.20.Fs Electron collisions
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Energy dependence of the low‐energy electronic stopping power

David K. Brice

Appl. Phys. Lett. 29, 10 (1976); http://dx.doi.org/10.1063/1.88875 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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The correct prediction of the electronic stopping power is important in establishing the basis for the technique of ion bombardment of neutron damage. Experimental measurements of the stopping power and the depth distribution of damage deposition by heavy atomic projectiles incident on matter have shown that the velocity proportional electronic stopping power formulas of Lindhard and Firsov are not valid for projectile velocities in the range from 2v0 up to v1, where v0 is the Bohr velocity and v1 is Lindhard’s proposed upper limit for the validity of these formulas. This letter points out that a previously published modification of the Firsov theory predicts a strong superlinear dependence of the stopping power on velocity in this velocity region due to effects which arise when the incident projectile velocity is comparable with that of the atomic electrons. Apart from a scale factor along the velocity axis, which must be determined from experimental measurement, the modified theory correctly predicts the energy dependence of the low‐energy electronic stopping power. Values of the scale factor for a large collection of projectile‐target combinations indicate that for most projectile‐target combinations the velocity‐proportional region of the electronic stopping power does not extend above v0.
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61.80.Jh Ion radiation effects
61.80.Lj Atom and molecule irradiation effects
29.40.-n Radiation detectors

Correlation between the thermal stability and activation energy of crystallization in metallic glasses

H. S. Chen

Appl. Phys. Lett. 29, 12 (1976); http://dx.doi.org/10.1063/1.88876 (3 pages) | Cited 38 times

Online Publication Date: 28 August 2008

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The origin of a large spread in the activation energy of crystallization, ΔE, in metallic glasses is explained based on a structural relaxation model. The calculated ΔE from the available thermal and viscosity data is in fair agreement with the experimental results. It is the structural relaxation which leads to high ΔE (⩾100 kcal/mole) for stable glasses. It is also suggested that the structural relaxation is the rate‐controlling factor during the crystallization of the unstable glasses. Thus ΔE for unstable glasses is low (ΔE⩽20 kcal/mole), and is expected to be lower for amorphous metals prepared by low‐temperature deposition than for the corresponding melt‐quenched metallic glasses.
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64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.05.Kf Glasses (including metallic glasses)

Sputtering of Au by 45‐keV ions for different fluences

E. P. EerNisse

Appl. Phys. Lett. 29, 14 (1976); http://dx.doi.org/10.1063/1.88877 (4 pages) | Cited 17 times

Online Publication Date: 28 August 2008

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Measurements are presented of absolute sputtering coefficients S for polycrystalline Au bombarded by 45‐keV ions with Zion ranging from 2 to 79. Low‐fluence results taken with chemically etched Au surfaces represent the first complete set of S values taken under the nearly ideal sputtering conditions of vanishingly small ion fluence and undamaged target surface. The results confirm unambiguously the smooth monotonic increase in S with Zion as predicted by sputtering theory. High‐fluence results are also obtained which are representative of implanted‐target surface conditions. These results exhibit the periodic variation of S with Zion as seen in past sputtering investigations.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAsz double heterojunctions in an external grating cavity

P. D. Wright, J. J. Coleman, N. Holonyak, M. J. Ludowise, and G. E. Stillman

Appl. Phys. Lett. 29, 18 (1976); http://dx.doi.org/10.1063/1.88878 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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In1−xGaxP1−zAsz double heterojunctions (77 °K, yellow) are shown to exhibit either (or both) homogeneous or inhomogeneous line broadening when operated as lasers in an external grating cavity. Just above threshold, inhomogeneous line broadening is observed over much of the recombination spectrum. Well above threshold (large gain), homogeneous line broadening is observed when the grating is tuned onto the cavity modes in the region of line center.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.60.Fi Electroluminescence
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Single heterostructure AlxGa1−xAs phase modulator with SnO2‐doped In2O3 cladding layer

F. K. Reinhart, W. Robert Sinclair, and R. A. Logan

Appl. Phys. Lett. 29, 21 (1976); http://dx.doi.org/10.1063/1.88880 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Sputter deposition of low‐resistivity (0.02 Ω cm) layers of SnO2‐doped In2O3 onto AlxGa1−xAs results in heterojunction barriers to either n‐ or p‐type material. Low‐loss AlxGa1−xAs waveguides with SnO2‐In2O3 cladding have been fabricated. Their propagation properties can be efficiently modulated by means of the linear electro‐optic effect. Phase shifts for TE modes of 160 deg/V cm were measured at a wavelength λ=0.9 μm.
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84.40.Az Waveguides, transmission lines, striplines
42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Leaky wave room‐temperature double heterostructure GaAs:GaAlAs diode laser

D. R. Scifres, W. Streifer, and R. D. Burnham

Appl. Phys. Lett. 29, 23 (1976); http://dx.doi.org/10.1063/1.88881 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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Operation of a new cleaved facet room‐temperature double heterostructure GaAs:GaAlAs laser utilizing leaky wave coupling through the substrate is reported. The coupling mechanism is analogous to that of prism coupling from a waveguide, but no external components are used. The laser produces a highly collimated output beam with approximately 2°×8° divergence. The peak pulsed beam power at 2 times threshold is 1.5 W from one end with approximately one‐third of this power in the collimated beam. The total external differential quantum efficiency is on the order of 35%. These desirable characteristics are obtained at the expense of threshold current increases of approximately 30%.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics

Optical studies of the back‐channel leakage in N‐channel MOSFET on silicon‐on‐sapphire (SOS)

Eli Harari

Appl. Phys. Lett. 29, 25 (1976); http://dx.doi.org/10.1063/1.88882 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Internal photoemission studies of the Si‐sapphire interface of N‐channel transistors fabricated on silicon‐on‐sapphire (SOS) indicate that the leakage current observed in such devices after exposure to ionizing radiation is due to holes trapped in the sapphire close to the silicon interface. These holes can be removed by recombination with electrons photoinjected into the sapphire from the silicon. The much smaller preirradiation N‐channel leakage cannot be removed by electron photoinjection and is therefore thought to have a different origin.
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85.30.Tv Field effect devices
61.80.Cb X-ray effects
61.80.Ed γ-ray effects
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Far‐infrared generation from a spin‐flip laser

E. D. Shaw

Appl. Phys. Lett. 29, 28 (1976); http://dx.doi.org/10.1063/1.88859 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Far‐infrared emission has been observed from an InSb spin‐flip Raman laser where a mode‐locked TEA CO2 laser is used as the pump source. 400 μW of power are generated in 2‐nsec pulses near 100 μm. This contrasts with the usual two‐crystal scheme where one crystal is used to generate the Raman Stokes signal and a second InSb crystal is used as a mixer crystal. This experimental simplification allows for a much more direct evaluation of the usefulness of the spin‐flip Raman laser as a source of far‐infrared radiation. It is concluded that current technology permits construction of a spin‐flip Raman far‐infrared spectrometer tunable over about 60–125 cm−1.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.72.-g Optical sources and standards
07.60.Rd Visible and ultraviolet spectrometers

Efficient electric discharge lasers in XeF and KrF

R. Burnham, F. X. Powell, and N. Djeu

Appl. Phys. Lett. 29, 30 (1976); http://dx.doi.org/10.1063/1.88860 (3 pages) | Cited 31 times

Online Publication Date: 28 August 2008

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Laser action has been obtained in XeF and KrF in a transverse electric discharge powered by a fast Blumlein‐type circuit. Over‐all efficiencies of these lasers exceeded 1% for XeF and 0.3% for KrF. Maximum pulse energies of 100 mJ in XeF and 30 mJ in KrF were extracted. In XeF the peak pulse power was 25 MW while in KrF the peak pulse power was 1.5 MW.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

High‐efficiency high‐power coherent uv generation at 266 nm in 90° phase‐matched deuterated KDP

Yung S. Liu, W. B. Jones, and J. P. Chernoch

Appl. Phys. Lett. 29, 32 (1976); http://dx.doi.org/10.1063/1.88861 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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We report high‐efficiency high‐power uv generation at 266 nm by frequency quadrupling of Nd laser using two deuterated KDP crystals. An angle‐tuned type‐II phase‐matched (eoe‐interaction) deuterated KDP crystal is used for doubling 1.064 μm and a temperature‐tuned 90° phase‐matched deuterated KDP crystal is used, for the first time, for doubling 532 nm to 266 nm. Results indicate that an average uv power of several watts with an over‐all quadrupling efficiency of around 20% is obtainable, and that high peak uv power on the order of 10 GW with an efficiency of greater than 35% can be expected for subnanosecond pulses. The high peak uv power is potentially useful for fusion studies.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
28.60.+s Isotope separation and enrichment

Temporal oscillations in the output from a gas‐dynamic laser with an unstable resonator

Marvin L. Alme

Appl. Phys. Lett. 29, 35 (1976); http://dx.doi.org/10.1063/1.88862 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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We have performed numerical studies of self‐oscillation instabilities which can result from the upstream‐downstream feedback in a gas‐dynamic laser (GDL) with an unstable resonator. In this letter, which extends previous work by Dreizen and Dykhne, we show that inclusion of a simple model for CO2 pumping by N2 strongly damps any oscillations in the output intensity.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nd:YAG single‐crystal fiber laser: Room‐temperature cw operation using a single LED as an end pump

J. Stone, C. A. Burrus, A. G. Dentai, and B. I. Miller

Appl. Phys. Lett. 29, 37 (1976); http://dx.doi.org/10.1063/1.88863 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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cw laser action has been obtained using as‐grown single‐crystal Nd:YAG fibers end‐pumped by a single high‐radiance LED. The fibers were 0.5 cm long and 80 μm in diameter, and the diameter of the LED luminous area was 85 μm. The lowest cw laser threshold was observed at a diode drive current of 45 mA.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics

Deuterium separation in formaldehyde by an intense pulsed CO2 laser

G. Koren, U. P. Oppenheim, D. Tal, M. Okon, and R. Weil

Appl. Phys. Lett. 29, 40 (1976); http://dx.doi.org/10.1063/1.88865 (3 pages) | Cited 16 times

Online Publication Date: 28 August 2008

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The first CO2 laser enrichment of deuterium in the gaseous phase of formaldehyde is reported. Irradition with pulses from a ∼20‐MW CO2 TEA laser focused strongly onto the sample yields highly efficient selective photodissociation of the formaldehyde molecule. A deuterium enrichment factor of approximately 40 is found for formaldehyde gas at an initial pressure of 20 Torr, after irradiation with 300 laser pulses.
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28.60.+s Isotope separation and enrichment
42.62.-b Laser applications
82.50.Hp Processes caused by visible and UV light
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes

Mode‐locked unstable‐cavity HF laser

George J. Simonis

Appl. Phys. Lett. 29, 42 (1976); http://dx.doi.org/10.1063/1.88866 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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We report the successful passive mode locking of a single‐line unstable‐cavity HF laser. Saturable absorption for the passive mode‐locking process was provided by low‐pressure HF gas in a separate cell internal to the optical cavity. Experimental results are consistent with mode‐locking theory and behavior in other systems.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Generation of 12‐μm radiation by difference‐frequency mixing of CO2 laser radiation in GaAs

N. Lee, R. L. Aggarwal, and B. Lax

Appl. Phys. Lett. 29, 45 (1976); http://dx.doi.org/10.1063/1.88867 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Step‐tunable infrared radiation in the 12‐μm region can be generated by two‐step noncollinear difference‐frequency mixing of CO2 laser beams in GaAs at liquid‐helium temperature. With 3‐MW peak input power from each of the two CO2 lasers operating at 9.6 and 10.6 μm, peak output power of ∼4 kW was obtained at 11.8 μm.
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42.65.-k Nonlinear optics
42.50.-p Quantum optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride

R. A. Scranton, J. B. Mooney, J. O. McCaldin, T. C. McGill, and C. A. Mead

Appl. Phys. Lett. 29, 47 (1976); http://dx.doi.org/10.1063/1.88868 (2 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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The Schottky barriers formed on n‐ZnS and n‐ZnSe by polymeric sulfur nitride have been compared to barriers formed by Au. Barrier energies as determined by photoresponse, current‐voltage, and capacitance‐voltage methods show that (SN)x is approximately 1.0 eV higher than Au on n‐ZnS and 0.3–0.4 eV higher than Au on n‐ZnSe. We believe that this is the first report of any metallic contact more electronegative than Au.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
85.30.-z Semiconductor devices

Pressure effects on metal oxide varistors

J. Wong and F. P. Bundy

Appl. Phys. Lett. 29, 49 (1976); http://dx.doi.org/10.1063/1.88869 (2 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Preliminary results on the strong dependence of current‐voltage characteristics of ZnO‐based metal oxide varistors on pressure up to ∼5 kbar (nominal) are reported. This letter perhaps constitutes the first pressure study on electronic ceramics.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.30.De Semiconductor-device characterization, design, and modeling
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
62.50.-p High-pressure effects in solids and liquids

MIS‐Schottky theory under conditions of optical carrier generation in solar cells

H. C. Card and E. S. Yang

Appl. Phys. Lett. 29, 51 (1976); http://dx.doi.org/10.1063/1.88870 (3 pages) | Cited 37 times

Online Publication Date: 28 August 2008

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The theory of MIS‐Schottky barriers and their electrical characteristics is examined for its application to solar cells. It is found that the interface behavior of contacts forward‐biased by illumination is qualitatively different from that of the same contacts biased in the dark by an applied forward voltage. Observed increases due to the interfacial layer in the open‐circuit voltage of the solar cell cannot therefore be associated with increases in the ’’n value’’ measured for the dark current, but rather are due to the different effects of this layer on the transport properties of majority and minority carriers. The theory predicts an optimum thickness for the interfacial layer above which the short‐circuit (minority‐carrier) current decreases, and the efficiency (fill factor) is degraded.
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84.60.Jt Photoelectric conversion
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.-r Electron states at surfaces and interfaces
85.30.Hi Surface barrier, boundary, and point contact devices

Vapor‐grown cw room‐temperature GaAs/InyGa1−yP lasers

C. J. Nuese, G. H. Olsen, and M. Ettenberg

Appl. Phys. Lett. 29, 54 (1976); http://dx.doi.org/10.1063/1.88871 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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Vapor‐grown double‐heterojunction (DH) laser structures of GaAs/InyGa1−yP have been prepared with room‐temperature threshold current densities as low as 1140 A/cm2 and differential quantum efficiencies as high as 47%. cw operation at room temperature has been obtained from such devices.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Plasma oxidation of GaAs

R. P. H. Chang and A. K. Sinha

Appl. Phys. Lett. 29, 56 (1976); http://dx.doi.org/10.1063/1.88872 (3 pages) | Cited 49 times

Online Publication Date: 28 August 2008

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A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one‐step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium‐to‐arsenic ratio of nearly one. The electrical properties (I‐V, C‐V) of the films are such that this process may be useful in device fabrication.
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81.65.Kn Corrosion protection
73.61.Ng Insulators
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Capacitor‐shunted Josephson junction for improved coupling with microwave fields

D. Morisseau, J. Lewiner, S. J. Lewandowski, and G. Jung

Appl. Phys. Lett. 29, 59 (1976); http://dx.doi.org/10.1063/1.88873 (2 pages)

Online Publication Date: 28 August 2008

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We report the fabrication of a capacitor‐shunted Josephson junction and its use as a microwave device with improved coupling to microwave fields. The junction was evaporated on a thin plastic substrate which was subsequently folded like a flat‐spring clip in order to make a circular coupling loop terminated by a parallel‐plate capacitor. The capacitor short‐circuits the loop for high‐frequency currents but keeps it open for dc currents, rendering possible the application of dc bias to the junction. The folded junction was observed at X band to couple 20 dB better to rf power than the same junction extended flat.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
84.40.Az Waveguides, transmission lines, striplines
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