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15 Nov 1976

Volume 29, Issue 10, pp. 629-686


SAW image scanner using transverse acoustoelectric effect in photoconductive CdS

Masayoshi Yamada and Chihiro Hamaguchi

Appl. Phys. Lett. 29, 629 (1976); http://dx.doi.org/10.1063/1.88903 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Optical image scanning utilizing the transverse acoustoelectric effect induced by surface acoustic waves propagating on a basal plane of photoconductive cadmium sulfide is experimentally demonstrated. ’’Positive’’ high sensitivity is obtained by using a cadmium sulfide crystal known well to be an excellent photoconductor as well as a good piezoelectric material.
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72.50.+b Acoustoelectric effects
42.30.Va Image forming and processing
85.60.Pg Display systems
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Ultralow‐voltage image intensifiers

W. E. L. Haas, G. A. Dir, J. E. Adams, and I. P. Gates

Appl. Phys. Lett. 29, 631 (1976); http://dx.doi.org/10.1063/1.88904 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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A novel reflective image intensifier based on the twisted nematic electro‐optic effect is described. The device can be read out with intense actinic radiation without need for an optical blocking layer. Images of very high resolution and excellent tonal range can be obtained at voltage levels as low as 1.6 Vrms.
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85.60.Pg Display systems
61.30.-v Liquid crystals
78.20.Jq Electro-optical effects
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks

Electrohydrodynamic instabilities in nematic liquids of positive dielectric ansiotropy

Alan Sussman

Appl. Phys. Lett. 29, 633 (1976); http://dx.doi.org/10.1063/1.88905 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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True hydrodynamic instabilities in nematic and weakly cholesteric liquids of positive dielectric anisotropy were observed under ac excitation. Static and dynamic periodic structures occur under two regimes. The low‐conductance mode is characterized by an instability threshold voltage which is independent of the driving frequency and almost independent of temperature until a transition frequency is reached. Above that transition frequency, the threshold is a field, proportional to the square root of the driving frequency and varying with temperature as the square root of the viscosity. The high‐conductance mode is characterized by a field threshold at all driving frequencies. The conductance mode type is determined by both the charge relaxation frequency and the electrode spacing. The existence of a cutoff frequency for the instability lends additional support to the identification of the phenomenon as a conductance mode.
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61.30.-v Liquid crystals
47.20.-k Flow instabilities
62.10.+s Mechanical properties of liquids

Laser speckle studies of the electric field suppression of the fluctuations in nematic liquid crystals

E. Wiener‐Avnear

Appl. Phys. Lett. 29, 635 (1976); http://dx.doi.org/10.1063/1.88906 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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The thermal orientational fluctuations of nematic liquid crystals have been studied by analyzing the speckle transmission picture of a coherent laser light. The fluctuations’s suppression on the application of a biasing electric field follows a reciprocal square dependence.
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78.20.Jq Electro-optical effects
85.60.Pg Display systems
61.30.-v Liquid crystals
42.79.Hp Optical processors, correlators, and modulators

Work function of LaB6

H. Yamauchi, K. Takagi, I. Yuito, and U. Kawabe

Appl. Phys. Lett. 29, 638 (1976); http://dx.doi.org/10.1063/1.88907 (3 pages) | Cited 24 times

Online Publication Date: 28 August 2008

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By means of Richardson plots, low work functions of 2.3–2.4 eV have been measured for three cyrstal planes including (100) of single‐crystal LaB6. Modifying Smith’s model of a metallic surface, the work function of LaB6 has been theoretically estimated for a jellium model at 2.31±0.05 eV which is in good agreement with experimental values.
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73.30.+y Surface double layers, Schottky barriers, and work functions
79.40.+z Thermionic emission

Fast transient spectroscopy of the free‐carrier plasma edge in Ge

S. A. Jamison, A. V. Nurmikko, and H. J. Gerritsen

Appl. Phys. Lett. 29, 640 (1976); http://dx.doi.org/10.1063/1.88908 (4 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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The free‐carrier plasma edge and plasma diffusion dynamics have been studied in Ge by monitoring rapid temporal variations of surface reflectivity at 10.6‐μm wavelength which occur after excitation by intense picosecond pulses at 1.6 μm. The results of such transient spectroscopy show that the method can be used as a sensitive diagnostic tool for the many semiconductor plasmas.
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72.30.+q High-frequency effects; plasma effects
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

High‐order submillimeter mixing in point‐contact and Schottky diodes

B. F. J. Zuidberg and A. Dymanus

Appl. Phys. Lett. 29, 643 (1976); http://dx.doi.org/10.1063/1.88909 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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The 337‐μm radiation of an HCN laser has been mixed with the radiation of a 3‐mm kylstron in a harmonic mixer employing various types of diodes. Beat notes resulting from different orders of mixing, occurring at frequencies as high as 4.5 THz, could be directly observed on the scope. Gallium arsenide appeared to be the most favorable diode material, whereas the Schottky barrier type produce slightly better results than the conventional GaAs point‐contact diodes. The performance of the heterodyne system at 891 GHz is given in terms of sensitivity (NEP) and conversion loss (Lc).
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84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts

Disorder produced by high‐dose implantation in Si

L. Csepregi, E. F. Kennedy, S. S. Lau, J. W. Mayer, and T. W. Sigmon

Appl. Phys. Lett. 29, 645 (1976); http://dx.doi.org/10.1063/1.88886 (4 pages) | Cited 56 times

Online Publication Date: 28 August 2008

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Channeling measurements with MeV 4He ions were used to investigate the disorder distributions produced in 〈111〉 and 〈100〉 Si samples by implantation at substrate temperatures from −180 to 300 °C. The results indicate that for high implantation doses (1015–1016 ions/cm2) a deep stable disordered region is present in both orientations for the samples implanted at temperatures above room temperature but is absent for room‐temperature and lower implants. The colors that have been observed on the surface of samples with similar implants are found to be correlated with the thickness of a thin crystalline layer at the surface.
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61.72.U- Doping and impurity implantation
64.60.Cn Order-disorder transformations
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Visible interference effects in silicon caused by high‐current–high‐dose implantation

T. E. Seidel, G. A. Pasteur, and J. C. C. Tsai

Appl. Phys. Lett. 29, 648 (1976); http://dx.doi.org/10.1063/1.88887 (4 pages) | Cited 28 times

Online Publication Date: 28 August 2008

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Silicon samples with visible color bands have been produced by high beam currents and have been studied using optical reflectivity, Rutherford backscattering (channeling), and transmission electron microscopy. Backscattering shows crystalline or near‐crystalline layers at the surface, buried amorphous layers centered at the damage range, and a deeper damage peak. Complex interference spectra are successfully analyzed for two sets of fringes: a visible set primarily associated with the crystalline layer of index of refraction nx at the surface and an infrared set primarily associated with the buried amorphous layer (na≳nx). Interband transitions in the ultraviolet confirm the existence of crystalline layers at the surface. The deeper damage peak is composed of small dislocations as shown by electron microscopy.
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61.72.U- Doping and impurity implantation
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
64.60.Cn Order-disorder transformations

GaAs p+n−n+ directional‐coupler switch

F. J. Leonberger, J. P. Donnelly, and C. O. Bozler

Appl. Phys. Lett. 29, 652 (1976); http://dx.doi.org/10.1063/1.88888 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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GaAs p+n−n+ electro‐optic directional‐coupler switches have been successfully fabricated and evaluated at 1.06 μm for use as components in integrated optical circuits. The devices were fabricated from a pair of closely spaced low‐loss [α≈1 cm−1 (4.3 dB/cm) at 1.06 μm] single‐mode p+n−n+ channel‐stop strip guides. They are operable both as passive directional couplers and as electro‐optic switches. The couplers have exhibited 98% power transfer and have an attenuation only about 0.1 dB/cm greater than that of a single guide having the same dimensions as one of the coupled guides. The switch performance was found to depend on the crystallographic direction chosen for light propagation. All devices were in the {100} plane, and 17‐dB (98%) power isolation in both the switched and unswitched states with constant total power output (≲0.2‐dB variation) was achieved for propagation along a [011] direction. These switches were 7.2 mm long, and had an optimum switching voltage of 43 V and a calculated power‐bandwidth ratio in a 50‐Ω system of 110 mW/MHz.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Jq Electro-optical effects

LiNbO3 electro‐optic modulator and switch

F. R. Gfeller

Appl. Phys. Lett. 29, 655 (1976); http://dx.doi.org/10.1063/1.88889 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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We demonstrate an experimental electro‐optical modulator/switch based on the principle of coupled guided waves with adjustable coupling gap and interaction length. The maximum extinction ratio observed was −20 dB.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Jq Electro-optical effects
42.79.Gn Optical waveguides and couplers

Multimode optical channel waveguides induced in glass by laser heating

D. Chen, B. Koepke, J. D. Zook, and E. BernaL G.

Appl. Phys. Lett. 29, 657 (1976); http://dx.doi.org/10.1063/1.88890 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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Multimode optical channel waveguides are produced on filter glass wafers using a scanning focussed Ar laser beam. The localized refractive index change produced by the laser heating is measured and analyzed. The waveguide cross‐sectional area is related to the laser power and scanning speed. Potential applications of this technique of channel waveguide fabrication are presented.
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42.79.Gn Optical waveguides and couplers
42.62.-b Laser applications
79.20.Ds Laser-beam impact phenomena

Combined suppressive and extinction writing using M and MA centers in Li‐doped NaF

David Casasent and Frank Caimi

Appl. Phys. Lett. 29, 660 (1976); http://dx.doi.org/10.1063/1.88891 (3 pages)

Online Publication Date: 28 August 2008

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The photodichroism and dispersion of M and MA centers in Li‐doped NaF are used in a gray‐scale image recording, reading, and storage scheme, combining extinction and suppressive writing. Improved sensitivity, contrast, and the use of the same wavelength for writing and reading are the principal advantages.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.70.Gi Light-sensitive materials
61.72.jn Color centers

Efficient high‐power operation of the cw far‐infrared waveguide laser

D. T. Hodges, F. B. Foote, and R. D. Reel

Appl. Phys. Lett. 29, 662 (1976); http://dx.doi.org/10.1063/1.88892 (3 pages) | Cited 41 times

Online Publication Date: 28 August 2008

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Order‐of‐magnitude increases in output power and efficiency have been obtained from optically pumped FIR lasers using a new FIR waveguide laser geometry and a new output coupler. Conversion efficiencies 5–15% of the theoretical maximum are reported for several lines between 71 and 1222 μm and cw output of 400 mW at 118 μm and 40 mW at 496 μm are obtained from a laser 2 m in length. These results indicate that the stronger FIR transitions are capable of cw operation at the 0.1–1.0‐W level for 100 W of CO2 pump power.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Synchronous mode locking of two cw dye lasers sharing a common amplifier medium

B. Couillaud and A. Ducasse

Appl. Phys. Lett. 29, 665 (1976); http://dx.doi.org/10.1063/1.88893 (2 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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A double‐wavelength synchronously mode‐locked cw dye laser is described. This laser consists of two resonators sharing a common amplifier medium, the passive mode locking of one cavity acting as a gain modulator for the second one. When the relative lengths and internal losses of the two oscillators are carefully adjusted, pulses are shown to be generated at two independently tunable wavelengths.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

New ion laser transitions in He‐Au mixtures

R. D. Reid, J. R. McNeil, and G. J. Collins

Appl. Phys. Lett. 29, 666 (1976); http://dx.doi.org/10.1063/1.88894 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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We have observed 20 new laser transitions when exciting a helium discharge in a gold‐plated hollow cathode. The new ion laser transitions span the wavelength region from 253 to 763 nm. The behavior of laser power as a function of helium pressure and discharge current is presented. In general, the transitions have low threshold currents (<4 A), and the output power does not saturate at the limit of the discharge current. Multiline output power of 125 mW has been demonstrated in the 250–290‐nm region.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.80.Xx Level crossing and optical pumping

Efficient ir image up‐conversion in two‐photon resonantly pumped Cs vapor

E. A. Stappaerts, S. E. Harris, and J. F. Young

Appl. Phys. Lett. 29, 669 (1976); http://dx.doi.org/10.1063/1.88895 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Resonant two‐photon pumping in the Cs 6s2S‐7s2S transition has been used for 2.9 μm to 4550 Å image up‐conversion. A power conversion efficiency of 20% with 1000 resolvable spots was achieved using a pump power of 8 kW. The pumping laser, Nd : lanthanum berylate, has a natural two‐photon coincidence with the Cs 6s2S‐7s2S transition.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
42.65.-k Nonlinear optics
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes

Measurement of the photoconductivity using the acoustoelectric current of the surface wave

Keiichi Yamamoto, Yoshimitsu Yamazoe, Shuichi Kameyama, and Kenji Abe

Appl. Phys. Lett. 29, 671 (1976); http://dx.doi.org/10.1063/1.88896 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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The photoconductivity of CdS single crystals was measured by using the acoustic surface wave. At 130 K, we observed the peaks at 474, 486, 494 (P1), and 505 (P3) μm. The peaks at 474 and 486 μm are due to the exciton transition. P1 and P3 are due to the sulphur vacancy. The temperature shift of the band edge is estimated to be −3.7×10−4 eV/deg from P1 and −3.5×10−4 eV/deg from P3.
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72.50.+b Acoustoelectric effects
72.40.+w Photoconduction and photovoltaic effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Determination of the lasing threshold in stripe‐geometry double‐heterostructure junction lasers

Thomas L. Paoli

Appl. Phys. Lett. 29, 673 (1976); http://dx.doi.org/10.1063/1.88897 (3 pages)

Online Publication Date: 28 August 2008

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Measurements of the noise fluctuations in the light intensity emitted by stripe‐geometry junction lasers are used to relate the threshold for amplitude‐stabilized oscillation to the behavior of the first and second derivatives of the diode’s electrical characteristics. The amplitude stabilization is observed to begin at a current above the point where the second‐derivative signal attains its maximum value but below the current at which the junction voltage is fully saturated. Consequently, the electrical derivatives do not, in general, sense the exact threshold current but only provides bounds on its value.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Reducing grain‐boundary effects in polycrystalline silicon solar cells

T. L. Chu

Appl. Phys. Lett. 29, 675 (1976); http://dx.doi.org/10.1063/1.88898 (2 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Solar‐cell structures were prepared by depositing successively p‐ and n+‐type silicon layers on low‐resistivity p‐type polycrystalline silicon substrates. The characteristics of the solar cells are limited predominately by the grain boundaries in the deposited p layer. The effects of grain boundaries can be reduced by increasing the dopant concentration in the p layer, and solar cells of lower series resistance and higher conversion efficiency have been obtained.
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84.60.Jt Photoelectric conversion
81.10.Bk Growth from vapor

A novel inorganic photoresist utilizing Ag photodoping in Se‐Ge glass films

Akira Yoshikawa, Osamu Ochi, Haruo Nagai, and Yoshihiko Mizushima

Appl. Phys. Lett. 29, 677 (1976); http://dx.doi.org/10.1063/1.88899 (3 pages) | Cited 49 times

Online Publication Date: 28 August 2008

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By ’’photodoping’’ with silver, chalcogenide glasses become almost insoluble in alkaline solutions. This letter examines the applicability of this effect to silicon microfabrication technology. Suitable processing techniques and exposure characteristics are investigated. It is shown that the (Ag) ‐Se‐Ge glass system can be used as a negative‐type photoresist; fine pattern photoetching of less than 1 μm line width in SiO2 is easily achieved. This inorganic photoresist has some advantages over the conventional polymer‐type photoresists in resolution, etch resistance to acid solutions, and process reproducibility.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
07.68.+m Photography, photographic instruments; xerography
81.40.Tv Optical and dielectric properties related to treatment conditions
42.70.Gi Light-sensitive materials

Low‐frequency current pulses in a semiinsulating GaAs device

T. Mimura, H. Suzuki, S. Ohkawa, and H. Ishikawa

Appl. Phys. Lett. 29, 679 (1976); http://dx.doi.org/10.1063/1.88900 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Coherent low‐frequency current pulses (3×10−3–2×10−2 Hz at room temperature) have been observed in semiinsulating (SI) GaAs with an epitaxial n‐GaAs film (n) as a cathode and an evaporated metal as an anode. By measuring the potential drop across the n‐SI junction, very high electric fields have been found near the junction. The periodic creation and annihilation of a space‐charge barrier due to deep‐lying electron traps localized at the n‐SI junction qualitatively explains the prominent features of the phenomenon.
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72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Hi Surface barrier, boundary, and point contact devices

Operation of ITO/Si heterojunction solar cells

Tiberiu Mizrah and David Adler

Appl. Phys. Lett. 29, 682 (1976); http://dx.doi.org/10.1063/1.88901 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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We have fabricated solar cells consisting of transparent conducting films of indium‐tin oxide (ITO) rf sputtered onto wafers of single‐crystalline Si. A model quantitatively explaining the experimental data for this MOS‐type solar cell is presented.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling

Room‐temperature operation of GaAs Bragg‐mirror lasers

W. Ng, H. W. Yen, A. Katzir, I. Samid, and A. Yariv

Appl. Phys. Lett. 29, 684 (1976); http://dx.doi.org/10.1063/1.88902 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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Room‐temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fabricated from conventional double heterostructures involving only a single step of liquid‐phase epitaxy. For gratings with a period of 3700 Å, the diodes lased at 8770 Å, which corresponds to the high‐absorption side of the spontaneous emission spectrum. Thresholds as low as 6 kA/cm2 have been realized.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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