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1 Dec 1976

Volume 29, Issue 11, pp. 691-758

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New technique of aligning liquid crystals on surfaces

Dietrich Meyerhofer

Appl. Phys. Lett. 29, 691 (1976); http://dx.doi.org/10.1063/1.88928 (2 pages) | Cited 22 times

Online Publication Date: 28 August 2008

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A new evaporation procedure for preparing the surfaces of liquid crystal cells is described. It causes the liquid crystal to align uniformly, but with a small tilt bias. This is the optimum configuration for the important field effect display devices. The exact dependence of the orientation on processing parameters and the stability of the surfaces to high temperatures are described.
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81.05.-t Specific materials: fabrication, treatment, testing, and analysis
85.60.Pg Display systems
68.60.-p Physical properties of thin films, nonelectronic

High‐energy electron gun with gas amplification of the filament current

J. Tulip and H. Seguin

Appl. Phys. Lett. 29, 692 (1976); http://dx.doi.org/10.1063/1.88910 (3 pages)

Online Publication Date: 28 August 2008

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A high‐energy electron beam is generated using gas‐ionizing collisions to amplify a small cathode filament current. The technique makes use of a crossed magnetic and electric field to reduce the effective mean free path of electrons at the cathode. At a pressure of 5×10−5 Torr helium, for example, a filament current of 0.4 mA will produce a uniform beam of 100 mA. Accelerating voltages up to 100 kV are used.
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41.75.Fr Electron and positron beams
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges

Shear measurements in shock‐loaded solids

Y. M. Gupta

Appl. Phys. Lett. 29, 694 (1976); http://dx.doi.org/10.1063/1.88929 (4 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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An experimental method is described which permits internal measurements of pressure and shear (IMPS) in shocked solids. The conceptual feasibility of the measurement was demonstrated by two experiments on polymethyl methacrylate (PMMA). The ability to make internal shear measurements raises interesting possibilities for shock‐wave studies in solids.
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62.50.-p High-pressure effects in solids and liquids
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
62.20.-x Mechanical properties of solids
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity

Impurity gettering in semi‐insulating gallium arsenide using ion‐implantation damage

C. O. Bozler, J. P. Donnelly, W. T. Lindley, and R. A. Reynolds

Appl. Phys. Lett. 29, 698 (1976); http://dx.doi.org/10.1063/1.88930 (2 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Ion‐implantation damage has been used to getter impurities from semi‐insulating gallium arsenide. The gettered impurities are fast diffusers which move into the damaged layer during an anneal at 750 °C. Impurity profiles of epitaxial layers grown on the gettered surfaces after removal of the damaged material were used to evaluate the effectiveness of the gettering. The out‐diffusion of compensating impurities or defects from the substrate into the epitaxial layer during growth was greatly reduced by the ion‐implantation damage gettering. The same gettering effect was produced when either Ne+ or Si+ was used to create the damaged layer.
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81.20.-n Methods of materials synthesis and materials processing
61.72.U- Doping and impurity implantation

Defect spatial distributions in annealed ion‐implanted silicon measured by a transient capacitance technique

K. L. Wang

Appl. Phys. Lett. 29, 700 (1976); http://dx.doi.org/10.1063/1.88931 (3 pages) | Cited 21 times

Online Publication Date: 28 August 2008

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Defect spatial distributions of extremely low concentration were measured, for the first time, by a transient capacitance technique in ion‐implanted MOSFET’s. Aluminum gate FET’s were ion implanted through the gate oxide with 1×1012 of 28Si+ ions/cm2 at 310 keV. The devices were annealed at 650 °C before Al was put down. Energy levels for the residual defects after annealing were obtained at Ec−0.29, Ec−0.45, Ec−0.54, and Ev+0.52 eV, respectively. Then the in‐depth distribution for each level was measured to a concentration of 1012/cm3 by varying the gate voltage. The profile of defect distribution shows that the annealing after low‐dose implantation differs from the regrowth of the amorphous layer caused by heavy implantation and that most of the residual defects remain in the bulk rather than at the interface.
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61.72.U- Doping and impurity implantation
73.20.Hb Impurity and defect levels; energy states of adsorbed species
85.30.Tv Field effect devices
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Laser oscillation involving nitrogen isoelectronic impurities in indirect‐gap AlxGa1−xAs (x=0.46, 2 °K)

Shun‐ichi Gonda, Yunosuke Makita, and Hachiro Ijuin

Appl. Phys. Lett. 29, 703 (1976); http://dx.doi.org/10.1063/1.88932 (2 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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Using the optical pumping method, laser oscillation was successfully achieved at 2 °K in indirect‐gap AlxGa1−xAs (x=0.46) implanted with nitrogen atoms for the first time. This shows that nitrogen isoelectronic traps in AlxGa1−xAs are effective for stimulated emission and laser oscillation, particularly in indirect material.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.45.+h Stimulated emission

Infrared radiation tunable from 5.5 to 18.3 μm generated by mixing in AgGaS2

R. J. Seymour and F. Zernike

Appl. Phys. Lett. 29, 705 (1976); http://dx.doi.org/10.1063/1.88933 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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Infrared radiation tunable from 5.5 to 18.3 μm was generated by difference frequency mixing in AgGaS2. The input sources were two tunable dye lasers, operating in the visible and pumped by a single N2 laser. From the measured phase‐matching widths, the absorption of AgGaS2 around 14 μm is calculated.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.62.-b Laser applications
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
07.60.Rd Visible and ultraviolet spectrometers

Ultraviolet‐preionized discharge‐pumped lasers in XeF, KrF, and ArF

R. Burnham and N. Djeu

Appl. Phys. Lett. 29, 707 (1976); http://dx.doi.org/10.1063/1.88934 (3 pages) | Cited 81 times

Online Publication Date: 28 August 2008

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Lasers in XeF, KrF, and ArF have been excited in a uv‐preionized transverse electric discharge. Laser pulse energies exceeding 100 mJ with peak powers of several megawatts have been produced with electrical efficiencies of over 1%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Laser generation from 6 to 35 μm following two‐photon excitation of ammonia

Ralph R. Jacobs, D. Prosnitz, William K. Bischel, and Charles K. Rhodes

Appl. Phys. Lett. 29, 710 (1976); http://dx.doi.org/10.1063/1.88911 (3 pages) | Cited 23 times

Online Publication Date: 28 August 2008

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Laser action has been observed for the first time in ammonia subsequent to two‐photon absorption. Oscillation has been demonstrated in 14NH3 following two‐photon excitation by a pair of CO2 TEA lasers operating on the P (34) and P (18) lines in the 10.4‐μm band, respectively. The observed wavelengths are 6.27, 6.69, 12.11, 13.72, 15.88, 15.95, 18.92, 19.55, 26.10, and 35.50 μm. Identification with existing spectroscopic information indicates that eight of the laser transitions occur within the ν2 manifold and originate by radiative pathways from the 2ν2−(5,4) level at 2115.88 cm−1, whereas the remaining two, at 6.27 and 6.69 μm, take place in the ν4 mode. The usefulness of employing such lasers as sensitive probes for molecular collisional processes in excited vibrational levels is indicated.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.80.Xx Level crossing and optical pumping
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes

Epoxy‐acrylate‐coated fused silica fibers with tensile strengths ≳500 ksi (3.5 GN/m2) in 1‐km gauge lengths

H. Schonhorn, C. R. Kurkjian, R. E. Jaeger, H. N. Vazirani, R. V. Albarino, and F. V. DiMarcello

Appl. Phys. Lett. 29, 712 (1976); http://dx.doi.org/10.1063/1.88912 (3 pages) | Cited 17 times

Online Publication Date: 28 August 2008

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Laser‐drawn epoxy‐acrylate‐coated fused silica fibers (∼110 μm fiber diameter) have been produced with high and exceptionally uniform strength. When tested in 20‐μm lengths, they show a single‐moded Weibull distribution, (m∼25), a median tensile strength Sm of 750 ksi (5.25 GN/m2), and a coefficient of variation (ν) of about 0.04. Using the previously justified ’’weakest link’’ model, this predicts Sm∼600 ksi (4.2 GN/m2) for l‐km gauge lengths. The measured strength of a 1680‐m‐long fiber (i.e., the minimum strength found in testing 84 20‐m lengths) is 620 ksi (4.35 GN/m2). The capability of drawing kilometer lengths of fibers with strengths of this magnitude and uniformity is extremely important for the production of optical fiber cables.
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81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
42.81.-i Fiber optics
46.50.+a Fracture mechanics, fatigue and cracks

Four‐wave sum mixing (130–180 nm) in molecular vapors

K. K. Innes, B. P. Stoicheff, and Stephen C. Wallace

Appl. Phys. Lett. 29, 715 (1976); http://dx.doi.org/10.1063/1.88913 (3 pages) | Cited 24 times

Online Publication Date: 28 August 2008

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It is demonstrated that molecular vapors such as nitric oxide, bromine, and benzene can be used for resonantly enhanced four‐wave mixing into the vacuum ultraviolet. Coherent radiation in the 130–152‐nm region has been generated in nitric oxide, and continuous wavelength tunability achieved by pressure broadening the rotational structure at 10 atm. Estimates of the third‐order nonlinear susceptibility are shown to be consistent with the observed conversion efficiency in nitric oxide.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
33.20.Ni Vacuum ultraviolet spectra

The probability to avoid optical breakdown at 6943 Å in NaCl

P. Kelly and P. Bräunlich

Appl. Phys. Lett. 29, 717 (1976); http://dx.doi.org/10.1063/1.88914 (3 pages)

Online Publication Date: 28 August 2008

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Computer‐simulated ’’one‐shot‐on‐one‐site’’ damage events in NaCl at the ruby wavelength are illustrated as deterministic survival curves. Multiphoton‐assisted avalanche breakdown is considered for varying laser peak flux densities. For a fixed laser output power level, the effects are calculated for various initial free and trapped carrier concentrations in the presence and absence of multiphoton absorption. The results are in reasonable agreement with recent measurements obtained with LiF and Ar and N2 at intermediate pressures. Experimental observations in NaCl are not presently available.
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79.20.Ds Laser-beam impact phenomena
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
77.22.Jp Dielectric breakdown and space-charge effects

Room‐temperature cw operation of an efficient miniaturized Nd:YAG laser end‐pumped by a superluminescent diode

K. Washio, K. Iwamoto, K. Inoue, I. Hino, S. Matsumoto, and F. Saito

Appl. Phys. Lett. 29, 720 (1976); http://dx.doi.org/10.1063/1.88915 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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A miniaturized Nd:YAG laser is described, in which a 3‐mm‐diam×5.4‐mm‐long laser rod is end‐pumped by a single AlxGa1−xAs superluminescent diode (SLD) having 20‐μm×1.4‐nm stripe geometry. A 4.5‐mW laser power was obtained at room temperature in a 1‐ms pulse operation. Emitted power from the SLD was 50 mW with 1.7% external power efficiency. When continuously pumped, a 1.5‐mW laser power was obtained at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Generation of coherent anti‐Stokes rotational Raman radiation in hydrogen gas

J. J. Barrett

Appl. Phys. Lett. 29, 722 (1976); http://dx.doi.org/10.1063/1.88916 (3 pages) | Cited 17 times

Online Publication Date: 28 August 2008

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Coherent anti‐Stokes rotational Raman scattering (CARS) has been observed for the J=3→5 rotational transition in hydrogen at a Raman frequency shift of 1033.4 cm−1. The pump wavelength of 532.1 nm was provided by a frequency‐doubled acousto‐optic Q‐switched cw krypton‐arc‐lamp‐pumped Nd:YAG laser, and the Stokes radiation at 563.1 nm was generated by a rhodamine 6G jet‐stream dye laser excited by the 532.1‐nm radiation. A comparison is made of the H2 rotational CARS signal with the vibrational CARS signal produced by the 995.4‐cm−1 ν2 vibrational mode of benzene.
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33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
33.20.Tp Vibrational analysis
33.20.Vq Vibration-rotation analysis
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Off‐resonant infrared laser action in NH3 and C2H4 without population inversion

T. Y. Chang and J. D. McGee

Appl. Phys. Lett. 29, 725 (1976); http://dx.doi.org/10.1063/1.88917 (3 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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Several new infrared laser lines in CO2‐laser‐pumped NH3 and C2H4 have been observed under conditions that preclude population inversion. The emission frequency is found to be off resonant by roughly the same amount as the pump frequency, which is consistent with the theory of Raman‐type transition in a coupled three‐level system.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Galvanic detection of optical absorptions in a gas discharge

R. B. Green, R. A. Keller, G. G. Luther, P. K. Schenck, and J. C. Travis

Appl. Phys. Lett. 29, 727 (1976); http://dx.doi.org/10.1063/1.88918 (3 pages) | Cited 108 times

Online Publication Date: 28 August 2008

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An electrical signal, resulting from discrete optical absorptions, has been observed for a variety of elements, including several for which such an effect had not been previously reported. In the present case, the effect is observed as a change in the voltage across a gas discharge tube produced by irradiation with a laser tuned to the wavelength of a transition of a species in the discharge. This signal may be used—without optical detection apparatus—for spectroscopic investigations or analytical determinations of materials in the discharge. Signals were obtained for transitions of lithium, sodium, calcium, barium, uranium, neon, and helium, in commercial hollow cathode lamps, and neon and helium in conventional discharge tubes.
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52.80.Hc Glow; corona
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
32.30.-r Atomic spectra
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Phase matching of two‐photon resonant 4‐wave mixing processes in alkali metal vapors

G. C. Bjorklund, J. E. Bjorkholm, P. F. Liao, and R. H. Storz

Appl. Phys. Lett. 29, 729 (1976); http://dx.doi.org/10.1063/1.88919 (4 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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Many classes of two‐photon resonant 4‐wave mixing processes in alkali metal vapors are shown to be phase matchable by adjusting the frequencies of the fundamental waves. Essentially perfect phase matching of one such process in Na vapor is demonstrated experimentally and shown for plane waves to be insensitive to variations in spatial distribution of the nonlinear medium.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Gain increase in laser amplifiers by suppression of parasitic oscillations

P. Labudde, W. Seka, and H. P. Weber

Appl. Phys. Lett. 29, 732 (1976); http://dx.doi.org/10.1063/1.88920 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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The influence of fluorescence amplification and parasitic modes on the gain characteristics of a laser amplifier is investigated experimentally for a YAG:Nd rod. Possibilities of suppressing parasitic modes are tested. By cutting small grooves into the cylindrical surface of the rod the gain is shown to be improved by a factor 2.4 with respect to a ground rod.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Preparation of light‐focusing plastic fiber by heat‐drawing process

Yasuji Ohtsuka and Yoshimi Hatanaka

Appl. Phys. Lett. 29, 735 (1976); http://dx.doi.org/10.1063/1.88921 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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A light‐focusing plastic fiber (LFF) was prepared by the heat‐drawing process of the following perform at 106–120 °C under 5–7 g/mm2 stress and draw ratio DR=6–370: preform, a light‐focusing plastic rod obtained from the photocopolymerization of methyl methacrylate (MMA) with vinyl benzoate (VB) or vinyl o‐chlorobenzoate (VOCB), consisting of linear copolymers. LFF’s of radius rp=0.140 mm and rp=0.071 mm were produced by heat drawing of 4/1 (wt/wt) MMA‐VB preform (P series) under DR=121 and of 4/1 (wt/wt) MMA‐VOCB preform (Q series) under DR=370, respectively. The refractive‐index profile, n (r) ∼r/rp, near the center axis is slightly changed by heat drawing. The internal loss of light transmission of the P‐series product is in the range of 4–5 dB/m.
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42.81.-i Fiber optics
81.40.Tv Optical and dielectric properties related to treatment conditions
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Dye laser action in a liquid crystal

S. Kuroda and K. Kubota

Appl. Phys. Lett. 29, 737 (1976); http://dx.doi.org/10.1063/1.88922 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Laser oscillation of dyes in a liquid crystal was studied. The threshold power required for laser emission decreased abruptly at the phase transition temperature of the liquid crystal. Some applications of this effect are discussed.
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42.55.Mv Dye lasers
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
64.90.+b Other topics in equations of state, phase equilibria, and phase transitions (restricted to new topics in section 64)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Crack formation in InP‐GaxIn1−xAs‐InP double‐heterostructure fabrication

Haruo Nagai and Yoshio Noguchi

Appl. Phys. Lett. 29, 740 (1976); http://dx.doi.org/10.1063/1.88923 (2 pages) | Cited 27 times

Online Publication Date: 28 August 2008

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InP‐Ga0.47In0.53As‐InP double‐heterostructure laser diodes which emit infared radiation near 1.6 μm were prepared. At 77 K, the laser threshold current density was about 2500 A/cm2. Cracking of GaxIn1−xAs epitaxial layers on InP substrates due to lattice mismatch was observed, and the composition range of GaxIn1−xAs in which no cracking occurred was found.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
68.55.-a Thin film structure and morphology
78.60.Fi Electroluminescence

Effect of distributed charge in the nitride of an MNOS structure on the flat‐band voltage

Joseph J. Chang

Appl. Phys. Lett. 29, 742 (1976); http://dx.doi.org/10.1063/1.88924 (2 pages)

Online Publication Date: 28 August 2008

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Closed‐form expressions have been obtained for the flat‐band voltage of an MNOS structure with charge carriers trapped in the nitride bulk according to the Arnett‐Yun model. Within the applicable limit of this model, the following observations can be made from these flat‐band voltage expressions: When σQ (t) ≃4 or larger, the carrier distribution can be fairly accurately approximated by a step function, so far as flat‐band voltage is concerned. When σQ (t) ≃0.1 or smaller, the centroid ? of the trapped carrier distribution approaches the trapping distance x0. σ is the capture cross section and Q (t) the total number of injected carriers at time t.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling

The on‐state of the amorphous semiconductor device

W. D. Buckley

Appl. Phys. Lett. 29, 743 (1976); http://dx.doi.org/10.1063/1.88925 (4 pages)

Online Publication Date: 28 August 2008

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A simple relaxation analysis is presented to show that the transient on characteristics of the amorphous semiconductor device are consistent with bulk filament characteristics.
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72.80.Ng Disordered solids
84.32.Dd Connectors, relays, and switches
72.60.+g Mixed conductivity and conductivity transitions
85.30.De Semiconductor-device characterization, design, and modeling

Molecular beam epitaxial GaAs layers for MESFET’s

C. E. C. Wood

Appl. Phys. Lett. 29, 746 (1976); http://dx.doi.org/10.1063/1.88926 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Tin‐doped GaAs layers on semi‐insulating substrates have been grown by molecular beam epitaxy and made into field effect transistor devices by two different technologies. Best devices gave 5.6 dB gain with associated minimum noise of 3.3 dB at 10 GHz and showed no signs of hysteresis even without a buffer layer to reduce interface state densities.
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85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology
34.50.Lf Chemical reactions

Thin‐film Bi2WO6

D. A. Payne and Jahar L. Mukherjee

Appl. Phys. Lett. 29, 748 (1976); http://dx.doi.org/10.1063/1.88927 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Thin films of Bi2WO6 were prepared by rf sputtering from a stoichiometric power target onto glass substrates. As deposited the films were noncrystalline, but after a low‐temperature heat treatment (200 °C) the films became highly crystalline and were single phase. Data are given for the fabrication procedure and material characteristics. Profilometry measurements indicate that the films were smooth (±200 Å) and suitable for photolithography. Bismuth tungstate is a highly acentric polar material which may be used in piezoelectric and pyroelectric devices. The recrystallized films were optically transparent and interferometry measurements are reported for the determination of refractive index.
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68.55.-a Thin film structure and morphology
78.20.-e Optical properties of bulk materials and thin films
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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