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15 Jul 1976

Volume 29, Issue 2, pp. 67-128

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Surface‐produced parallel alignment of nematic liquid crystals by polynuclear dicarboxylatochromium complexes

Shoichi Matsumoto, Daisuke Nakagawa, Nagao Kaneko, and Kiyoshi Mizunoya

Appl. Phys. Lett. 29, 67 (1976); http://dx.doi.org/10.1063/1.88968 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Dicarboxylatochromium complexes have produced very stable parallel molecular alignment of nematic liquid crystals, in contrast with a recently described perpendicular orientation by monocarboxylatochromium complexes. The complexes used are μ‐dicarboxylato‐bis (tetranitro‐μ‐hydroxodichromium (III))’s which bond chemically to substrate surfaces.
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61.30.-v Liquid crystals
68.35.Md Surface thermodynamics, surface energies
85.60.-q Optoelectronic devices

Piezoelectric electret transducer for ultrasonic generation and detection up to microwave frequencies

C. Alquié, J. Lewiner, and C. Friedman

Appl. Phys. Lett. 29, 69 (1976); http://dx.doi.org/10.1063/1.88969 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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In this paper we report some observations of ultrasonic generation and detection at frequencies up to 9360 MHz using a piezoelectric electret transducer. The transducers were made with biaxially stretched polyvinylidene fluoride films.
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43.58.+z Acoustical measurements and instrumentation
77.65.-j Piezoelectricity and electromechanical effects
07.07.Mp Transducers
81.40.Rs Electrical and magnetic properties related to treatment conditions

Piezoelectric effect in a cholesteric liquid crystal layer subjected to shear vibration

Yukio Kagawa and Toyomasa Hatakeyama

Appl. Phys. Lett. 29, 71 (1976); http://dx.doi.org/10.1063/1.88970 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Piezoelectric effects are observed in a mixed cholesteric liquid crystal layer. It is sandwiched by a pair of nesa‐coated glass plates one of which is subjected to lateral motion to develop the shear vibration in the layer. It is found that the electric potential is generated from the layer, the frequency of which is the same as that of the exciting vibration. Three cases of the molecular orientation process for the liquid crystal layer are tested: (i) previous impression of dc voltage, (ii) lecithin application on the surfaces of the substrate glass plates, and (iii) previous static shear strain on the layer. 10–20 mV peak‐to‐peak (p‐p) are generated for the vibratory displacement of 1 μm (p‐p) of 25 kHz.
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61.30.-v Liquid crystals
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
77.65.-j Piezoelectricity and electromechanical effects

Surface acoustic wave electromagnetic transducers from multiconductor flat cable

H. M. Frost and T. L. Szabo

Appl. Phys. Lett. 29, 73 (1976); http://dx.doi.org/10.1063/1.88971 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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We describe a new method for making meander‐line surface acoustic wave electromagnetic transducers at megahertz frequencies from multiconductor flat cable. Commerically available cable, consisting of uniform patterns of rectangular conductors, is used to fabricate identical transducers with well‐characterized electrical and acoustical properties. Also new expressions for the electrical inductance and transduction efficiency of these transducers are presented and compared to measurement for several Rayleigh wave devices. Measured transducer bandwidths agree with a predicted (sinX/X)2 response. Unique features of cable transducers are exploited in novel designs and applications such as precise velocity measurement and crack detection on curved surfaces.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
81.70.-q Methods of materials testing and analysis
07.07.Mp Transducers

Magnetic‐field‐dependent attenuation of surface waves by nickel thin films

Charles Krischer, Ian Feng, Jeffrey B. Block, and Moises Levy

Appl. Phys. Lett. 29, 76 (1976); http://dx.doi.org/10.1063/1.88972 (2 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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A strong magnetic‐field‐dependent room‐temperature attenuation of 618‐MHz surface waves propagating on a Y‐cut quartz substrate coated with a 200‐Å nickel film was observed. The attenuation could be varied over a range of more than 25 dB/cm by external magnetic‐field changes of less than 10 Oe.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.80.+q Magnetomechanical effects, magnetostriction

Optical image memory in slow surface states in germanium read out by surface acoustoelectric effect

T. Shiosaki, K. Narumiya, and A. Kawabata

Appl. Phys. Lett. 29, 77 (1976); http://dx.doi.org/10.1063/1.88973 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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An optical image can be stored in the slow surface states of Ge and can be read out by the separated medium acoustoelectric effect with a surface wave on LiNbO3. It is found that the surface is sensitive to an optical pattern with optical power less than 1 μW/mm2 at 368 nm wavelength. The memory time is considerably long due to the ’slow’ property of the surface states on Ge.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
72.50.+b Acoustoelectric effects
73.20.-r Electron states at surfaces and interfaces
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

High‐sensitivity acoustically scanned optical imaging device using charge storage effect

Ph. Defranould, H. Gautier, and C. Maerfeld

Appl. Phys. Lett. 29, 79 (1976); http://dx.doi.org/10.1063/1.88974 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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A new principle of acoustic scanning of an optical image is described. The illumination modulates the storage time constant of a charge grating acoustically stored in a p−n diode matrix. One surface acoustic pulse directly reads out the resulting charge distribution. Owing to integration effects, the device exhibits a very high sensitivity and an electronically variable contrast.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
72.50.+b Acoustoelectric effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
42.30.Sy Pattern recognition

Acoustic surface wave interaction charge‐coupled device

Stephen D. Gaalema, Richard J. Schwartz, and Robert L. Gunshor

Appl. Phys. Lett. 29, 82 (1976); http://dx.doi.org/10.1063/1.88975 (2 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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The observation of the synchronous drag of minority carriers by the electric field associated with an acoustic surface wave is reported. This phenomenon is exploited in a new charge‐coupled device (CCD) which uses a traveling piezoelectric surface acoustic wave in place of the gate structure of a conventional CCD. The surface wave interaction CCD (SWICC) should have several potential advantages over normal CCD’s, including increased information density, higher speed, and lower power consumption.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
72.50.+b Acoustoelectric effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Study of the equivalent electron drift field characteristics in LiNbO3 by phase holography

Dae M. Kim, Rajiv R. Shah, T. A. Rabson, and F. K. Tittel

Appl. Phys. Lett. 29, 84 (1976); http://dx.doi.org/10.1063/1.88976 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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An analysis of the diffraction efficiency of photorefractive holograms in ferroelectric crystals is shown to provide a novel technique for determining the nature and magnitude of the equivalent electron drift field. For a Fe‐doped lithium niobate crystal (0.05% per mole) we find that the total field consists of an intensity‐independent internal field of 8.5 kV/cm and a photogenerated field given by the conversion factor 1.4 ×106 V cm/W.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
74.20.-z Theories and models of superconducting state
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
77.80.-e Ferroelectricity and antiferroelectricity

Transferred‐electron photoemission to 1.4 μm

J. S. Escher and R. Sankaran

Appl. Phys. Lett. 29, 87 (1976); http://dx.doi.org/10.1063/1.88977 (2 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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We report here reflection‐ and transmission‐mode photoemission out to 1.4 μm from a biased field‐assisted p‐InGaAsP grown on p‐InP photocathode. The quantum yield in transmission is ∼0.1% from 0.9 to 1.4 μm. Dark current due to impact ionization by injected holes in the depletion region is observed.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.65.-b Surface treatments
85.60.Ha Photomultipliers; phototubes and photocathodes
73.30.+y Surface double layers, Schottky barriers, and work functions

Thermionic work function of (Cs)ZnO 

A. H. Sommer and T. R. Briere

Appl. Phys. Lett. 29, 89 (1976); http://dx.doi.org/10.1063/1.88978 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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The collector electrode of a thermionic converter requires a material having a low thermionic work function and chemical stability in a Cs atmosphere in the 800 °K range. This letter reports that ZnO with an adsorbed Cs film meets these requirements. The work function is approximately 1.3 eV. Various methods of preparing the ZnO film are described as well as an experiment in which Cs was replaced by K.
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84.60.Ny Thermionic conversion
79.40.+z Thermionic emission
73.40.Cg Contact resistance, contact potential

Anomalous plasma heating by an intense laser beam

V. Krishan, S. Krishan, K. P. Sinha, and A. Ganguli

Appl. Phys. Lett. 29, 90 (1976); http://dx.doi.org/10.1063/1.88979 (2 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Heating of laser‐produced plasmas by an instability is investigated through a nonlinear theory that does not treat the laser as a perturbation. It is found that the peaking of the anomalous absorption occurs only for a certain laser power. Comparison has been made with experiment.
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52.50.Gj Plasma heating by particle beams
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon

L. Csepregi, J. W. Mayer, and T. W. Sigmon

Appl. Phys. Lett. 29, 92 (1976); http://dx.doi.org/10.1063/1.88980 (2 pages) | Cited 157 times

Online Publication Date: 28 August 2008

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The regrowth of Si crystal from amorphous layers created by Si implantation into 〈111〉, 〈100〉, and 〈110〉 Si was studied. Channeling effect measurements show that the growths on the 〈110〉 and 〈100〉 substrates are epitaxial and linear with time. For the 〈111〉 samples the growth at 550 °C was significantly slower and nonlinear in time and the regrown layer contained a high concentration of defects. TEM micrographs indicate the presence of stacking faults and/or microtwins in the 〈111〉 samples.
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61.72.U- Doping and impurity implantation
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.Nn Stacking faults and other planar or extended defects

Capless annealing of ion‐implanted GaAs 

A. A. Immorlica and F. H. Eisen

Appl. Phys. Lett. 29, 94 (1976); http://dx.doi.org/10.1063/1.88981 (2 pages) | Cited 25 times

Online Publication Date: 28 August 2008

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A method is reported for capless annealing of ion‐implanted GaAs which gives electrical activation of Se‐implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State‐of‐the‐art performance has been realized from Schottky‐gate FET’s fabricated from this material.
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61.72.U- Doping and impurity implantation
85.30.Tv Field effect devices
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Observation of one‐ and two‐electron transfer from noble‐gas atom to highly stripped carbon ions

J. Goldhar, R. Mariella, and A. Javan

Appl. Phys. Lett. 29, 96 (1976); http://dx.doi.org/10.1063/1.88982 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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Experimental study of charge transfer between highly stripped ions of carbon and noble‐gas atoms was conducted. One‐ and two‐electron transfer to C+3, C+4, and C+5 was observed. The ions were obtained from plasma generated by a pulsed high‐power CO2 laser. 422
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34.50.-s Scattering of atoms and molecules
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
34.20.-b Interatomic and intermolecular potentials and forces, potential energy surfaces for collisions
82.20.Kh Potential energy surfaces for chemical reactions
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Thin‐film (Pb,Sn)Se photodiodes for 8–12‐μm operation

D. K. Hohnke, H. Holloway, K. F. Yeung, and M. Hurley

Appl. Phys. Lett. 29, 98 (1976); http://dx.doi.org/10.1063/1.88983 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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Photodiodes have been made from thin films of p‐type (Pb,Sn)Se on BaF2 substrates. Surface inversion using Pb barriers has given devices with D∗ (10.1 μm) ≳5×1010 cm Hz1/2 W−1 and D∗ (11.5 μ) ≳2×1010 cm Hz1/2 W−1 at 77 K with zero‐bias resistance‐area products up to 2 Ω cm2. Quantum efficiencies of the best devices were about 0.5.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors

cw laser action in the blue‐green spectral region from Ag II

W. L. Johnson, J. R. McNeil, G. J. Collins, and K. B. Persson

Appl. Phys. Lett. 29, 101 (1976); http://dx.doi.org/10.1063/1.88984 (2 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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We have observed 18 cw laser transitions in Ne‐Ag mixtures spanning the wavelength region from 408.6 to 585.2 nm. The upper laser levels of Ag II are judged to be pumped by a charge‐transfer reaction between a ground‐state neon ion and a ground‐state Ag I atom resulting in simultaneous ionization and excitation of the silver atom. Output characteristics of the Ag II laser transitions as a function of neon pressure and discharge current are presented. The two strongest transitions are 478.8 and 502.7 nm in the blue and green, respectively.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
34.80.Dp Atomic excitation and ionization

Performance of XeF/KrF lasers pumped by fast discharges

C. P. Wang

Appl. Phys. Lett. 29, 103 (1976); http://dx.doi.org/10.1063/1.88985 (3 pages) | Cited 27 times

Online Publication Date: 28 August 2008

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The output energy and pulse shape of XeF/KrF lasers pumped by fast discharges were measured at various gas compositions and total pressures. For the KrF laser, the maximum output (1.6 mJ) was obtained in a gas mixture of He:Kr:NF3=100:5:0.2 at a total pressure of 700 Torr. The output energy density was 160 mJ/l, and the electrical efficiency was 0.06%. The peak power was 55 kW. For the XeF laser, the maximum output (10 mJ) was obtained in a gas mixture of He:Xe:NF3=100:4:2 at a total pressure of 500 Torr. The peak output power was 1 MW. The output energy density (660 mJ/l) was a factor of 10 higher, and the efficiency (0.5%) was a factor of 2.5 higher than reported earlier.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

X‐ray ’’light pipes’’

D. Mosher and S. J. Stephanakis

Appl. Phys. Lett. 29, 105 (1976); http://dx.doi.org/10.1063/1.88986 (3 pages) | Cited 31 times

Online Publication Date: 28 August 2008

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A simple theory and experimental results are presented which describe the efficient transport of soft x radiation through hollow glass tubing by means of multiple grazing‐incidence internal reflection. It is shown that a large number of such tubes can be used to remotely image weak plasma sources of soft x radiation. The efficiency of transport through bent tubes and the use of light pipes as low‐pass filters for x radiation are discussed.
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07.85.-m X- and γ-ray instruments
52.70.-m Plasma diagnostic techniques and instrumentation

Selective excitation in charge‐transfer collisions with Ne2 

G. H. Bearman, J. D. Earl, H. H. Harris, and J. J. Leventhal

Appl. Phys. Lett. 29, 108 (1976); http://dx.doi.org/10.1063/1.88987 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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The possible advantages of employing neon‐dominated gas mixtures in e‐beam laser cavities are discussed, and cross sections for selective excitation of N2+, CO+, and CO2+ in charge‐transfer collisions between Ne2+ and N2, CO and CO2 are reported. The magnitudes of these cross sections (measured using beam techniques) compare favorably with analogous measurements involving He2+ reactant ions, suggesting that laser action in neon‐dominated mixtures might be achieved. The addition of helium to the ion source was observed to increase the Ne2+ beam current; however, the accompanying increased photon yield was greater than the percentage increase in the beam current, indicating that vibrationally relaxed Ne2+ is preferred. It is suggested that ’’seeding’’ a neon‐filled e‐beam laser cavity with helium could increase the over‐all efficiency of such a device.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

Source emission and photoelectron production in a seeded CO2 laser mixture

H. J. J. Seguin, D. McKen, and J. Tulip

Appl. Phys. Lett. 29, 110 (1976); http://dx.doi.org/10.1063/1.88988 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Measurements of spark source emission, transmission, and photoionization spectra in a CO2 laser mixture seeded with a low‐ionization‐threshold additive are presented. The results show a photoelectron density enhancement in excess of 3 orders of magnitude contained within a narrow transmission band at 1200 Å. Enhancement is also observed at wavelengths between 1700 and 2100 Å. The long‐wavelength effect, characterized by an increased photon mean free path, may identify a two‐step photoionization process.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Second‐harmonic generation in GaAs ’’stack of plates’’ using high‐power CO2 laser radiation

D. E. Thompson, J. D. McMullen, and D. B. Anderson

Appl. Phys. Lett. 29, 113 (1976); http://dx.doi.org/10.1063/1.88989 (3 pages) | Cited 33 times

Online Publication Date: 28 August 2008

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Efficient wide‐band high‐power generation of CO2 laser second‐harmonic radiation is reported using a ’’stack‐of‐plates’’ approach to phase match the interaction in GaAs. A long collinear interaction length is achieved by using a series of {111} GaAs crystalline plates at Brewster’s angle, each one coherence length thick, oriented so as to alternate the sign of the nonlinear polarization in each consecutive plate. The peak second‐harmonic power generated was 60 kW at 5.3 μm using 3 MW of mode‐locked pump power with a stack of 12 GaAs plates. 420
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Distributed‐feedback color center lasers in the 2.5–3.0‐μm region

G. C. Bjorklund, L. F. Mollenauer, and W. J. Tomlinson

Appl. Phys. Lett. 29, 116 (1976); http://dx.doi.org/10.1063/1.88990 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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We have demonstrated pulsed distributed‐feedback laser action in KCl:Li containing FA(II) color centers with spatially modulated concentrations. Laser outputs at various wavelengths between 2.6 and 2.8 μm have been observed with linewidths narrower than 0.2 nm. The absorbed pump power at threshold was 1.5 kW, and efficiencies of up to 6.7% were measured.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
61.72.jn Color centers

Ion‐beam‐deposited polycrystalline diamondlike films

E. G. Spencer, P. H. Schmidt, D. C. Joy, and F. J. Sansalone

Appl. Phys. Lett. 29, 118 (1976); http://dx.doi.org/10.1063/1.88963 (3 pages) | Cited 135 times

Online Publication Date: 28 August 2008

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X‐ray and electron beam diffraction analyses have been carried out on thin films deposited from a beam of carbon ions. Results show that the films consist of a polycrystalline background of cubic diamond with a particle size of 50–100 Å with single‐crystal regions up to 5 μm in diameter.
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68.55.-a Thin film structure and morphology
61.05.J- Electron diffraction and scattering
81.20.-n Methods of materials synthesis and materials processing

Polycrystalline thin‐film InP/CdS solar cell

K. J. Bachmann, E. Buehler, J. L. Shay, and S. Wagner

Appl. Phys. Lett. 29, 121 (1976); http://dx.doi.org/10.1063/1.88964 (3 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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We report the preparation of a polycrystalline thin‐film InP/CdS solar cell of area 0.52 mm2 having a power conversion efficiency of 2.8% under AM1 conditions. Based on the current‐voltage characteristics, we estimate that development of an improved contact to the p‐type InP would result in substantially higher efficiencies without any further improvement in the InP/CdS interface.
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84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
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