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1 Aug 1976

Volume 29, Issue 3, pp. 129-221

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Multistrip coupling to SAW resonators

R. C. M. Li and J. A. Alusow

Appl. Phys. Lett. 29, 129 (1976); http://dx.doi.org/10.1063/1.89001 (3 pages)

Online Publication Date: 28 August 2008

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The behavior of a multistrip coupler in a standing‐wave environment has been investigated with the use of a SAW resonator, both theoretically and experimentally. An understanding of this behavior is important to the design of multistrip coupled‐resonator filters.
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72.50.+b Acoustoelectric effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
84.40.-x Radiowave and microwave (including millimeter wave) technology

Stress generation by electromigration

I. A. Blech and Conyers Herring

Appl. Phys. Lett. 29, 131 (1976); http://dx.doi.org/10.1063/1.89024 (3 pages) | Cited 194 times

Online Publication Date: 28 August 2008

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Stresses in aluminum thin films on TiN were studied in situ by transmission x‐ray topography. Stress gradients were seen to build up in thin aluminum films during passage of electrical currents. The stresses are more compressive in the anode regions. These stress gradients seem to be a concomitant of the backflow responsible for the reported threshold in electromigration, and can probably be correlated quantitatively with it.
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68.60.-p Physical properties of thin films, nonelectronic
66.30.Fq Self-diffusion in metals, semimetals, and alloys
82.45.-h Electrochemistry and electrophoresis

In situ investigation of the mobility of small gold clusters on cleaved MgO surfaces

J. J. Metois, K. Heinemann, and H. Poppa

Appl. Phys. Lett. 29, 134 (1976); http://dx.doi.org/10.1063/1.89025 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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The mobility of small clusters of gold (≃10Å in diameter) on electron‐beam‐cleaved MgO surfaces was studied by in situ transmission electron microscopy under controlled vacuum (10−7 Pa range) and temperature conditions. During the first 10 min following a deposition at room temperature, over 10% of the crystallites moved over short distances (≃20Å) discontinuously, with a velocity greater than 150 Å/sec. 80% of the mobility events were characterized by the avoidance of proximity of other crystallites, and this was tentatively explained as the result of repulsive elastic forces between the interacting crystallites.
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68.55.-a Thin film structure and morphology
81.10.Bk Growth from vapor
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Shrinkage effect of stacking faults during HCl oxidation in steam

H. Shibayama, H. Masaki, H. Ishikawa, and H. Hashimoto

Appl. Phys. Lett. 29, 136 (1976); http://dx.doi.org/10.1063/1.89002 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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See Also: Erratum

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The generation and shrinkage of stacking faults during HCl oxidation in steam were investigated. Carrier gas, N2 or O2, was bubbled through H2O and mixed with HCl. In wet O2+HCl oxidation, the faults expanded at the beginning of oxidation and then shrank rapidly. However, the shrinkage of the faults was not observed in wet N2+HCl oxidation. The presence of O2 in the atmosphere influences the shrinkage of stacking faults during HCl oxidation in steam. A thick oxide film without faults can be easily obtained in this oxidation.
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61.72.Nn Stacking faults and other planar or extended defects
81.65.Kn Corrosion protection

Interdiffusion between GaAs and AlAs

L. L. Chang and A. Koma

Appl. Phys. Lett. 29, 138 (1976); http://dx.doi.org/10.1063/1.89026 (4 pages) | Cited 131 times

Online Publication Date: 28 August 2008

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Epitaxial structures composed of thin layers of GaAs and AlAs were grown by the technique of molecular beam epitaxy. The interdiffusion coefficient was measured by Auger‐electron profiling after annealing the structures under As‐rich conditions over the temperature range 850–1100 °C. This coefficient was found to be extremely small, in the 10−18 cm2/sec region at the lower temperatures. It also depends on the alloy composition, decreasing with an increase in Al. Such dependence becomes stronger at higher temperatures, giving rise to activation energies of 4.3 and 3.6 eV in the limits of GaAs and AlAs, respectively.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
66.30.J- Diffusion of impurities
68.55.-a Thin film structure and morphology
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Effect of gas‐phase stoichiometry on the minority‐carrier diffusion length in vapor‐grown GaAs 

M. Ettenberg, G. H. Olsen, and C. J. Nuese

Appl. Phys. Lett. 29, 141 (1976); http://dx.doi.org/10.1063/1.89027 (2 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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The electron diffusion length in Zn‐doped (p ∼1×1019 cm−3) vapor‐grown GaAs has been found to depend strongly on the gas‐phase stoichiometry used during epitaxial deposition. Specifically, near‐stoichiometric or Ga‐rich flow conditions provide diffusion lengths as large as 4.8 μm; this is about a factor of two larger than that of VPE GaAs prepared under commonly used As‐rich flow conditions, and is comparable to that of LPE GaAs. Furthermore, the modified gas‐flow conditions provide reduced threshold current densities for a room‐temperature double‐heterojunction laser of GaAs/In0.5Ga0.5P.
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72.80.Ey III-V and II-VI semiconductors
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Laser plasma focus produced in a ring target

G. Saint‐Hilaire and Z. Szili

Appl. Phys. Lett. 29, 143 (1976); http://dx.doi.org/10.1063/1.89028 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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A new geometry for generating a laser‐produced plasma is presented. A toroidal mirror is used to focus a CO2 laser beam on the inside wall of a copper ring target. The plasma produced converges at the center of the ring where an axial plasma focus is formed. High‐speed photography shows details of a plasma generated at a distance from the target surface. This new geometry could have important applications in the field of x‐ray lasers.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Gas breakdown at cyclotron resonance with a submillimeter laser

M. P. Hacker, R. J. Temkin, and B. Lax

Appl. Phys. Lett. 29, 146 (1976); http://dx.doi.org/10.1063/1.89029 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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A pulsed 496‐μm CH3F laser is used to produce gas breakdown in He at pressures between 1 and 300 Torr in an intense longitudinal magnetic field. Breakdown is detected by the observation of visible light when the electron cyclotron frequency (eB/m) equals the laser frequency, which occurs at B=216 kG for λ=496 μm. At the lowest helium pressures and near cyclotron resonance, the focused laser intensity of 40 kW/cm2 gives rise to very large electron heating rates, well beyond the limit of validity of conventional equilibrium breakdown theory. The observed result is an intensity‐dependent resonant linewidth, much larger than predicted by equilibrium theories.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Energy reflection from gold bombarded with keV protons at various angles of incidence

H. Sørensen

Appl. Phys. Lett. 29, 148 (1976); http://dx.doi.org/10.1063/1.89003 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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The calorimetric deuterium film method operating at liquid‐helium temperature was used for measuring the energy reflection coefficient γ for 1–10‐keV protons incident on gold at angles of incidence up to 75°. H+2 and H+3 ions were used to obtain the lowest velocities. The growth with angle increases with energy. There is fair agreement with the theoretical results of Robinson and of Oen and Robinson.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
61.80.Lj Atom and molecule irradiation effects

p‐n photoelectrolysis cells

A. J. Nozik

Appl. Phys. Lett. 29, 150 (1976); http://dx.doi.org/10.1063/1.89004 (4 pages) | Cited 78 times

Online Publication Date: 28 August 2008

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The efficiency of photoelectrolysis with solar radiation can be greatly enhanced by using simultaneously illuminated n‐ and p‐type electrodes. An energy level scheme for heterotype and homotype p‐n photoelectrolysis cells is presented which explains the enhanced efficiency. Data are presented for the homotype n‐GaP/p‐GaP and the heterotype n‐TiO2/p‐GaP systems which support the energy model. H2 and O2 are produced in the n‐TiO2/p‐GaP cell without the need of an external anodic bias.
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84.60.Rb Thermoelectric, electrogasdynamic and other direct energy conversion
82.50.Hp Processes caused by visible and UV light
82.47.-a Applied electrochemistry
73.40.-c Electronic transport in interface structures

High‐quantum‐efficiency photoemission from an InGaAsP photocathode

J. S. Escher, G. A. Antypas, and J. Edgecumbe

Appl. Phys. Lett. 29, 153 (1976); http://dx.doi.org/10.1063/1.89005 (3 pages) | Cited 19 times

Online Publication Date: 28 August 2008

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An improved InGaAsP quaternary III‐V material has been developed for near‐ir photocathode applications. A quantum efficiency of 9.0% per incident photon at 1.06 μm from a 1.15‐eV band‐gap sample has been achieved at room temperature.
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81.65.-b Surface treatments
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
85.60.Dw Photodiodes; phototransistors; photoresistors

Slip banding in Al single crystals produced by 10.6‐μm laser pulses

J. O. Porteus, M. J. Soileau, and C. W. Fountain

Appl. Phys. Lett. 29, 156 (1976); http://dx.doi.org/10.1063/1.89006 (3 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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Slip bands produced by 100‐nsec 10.6‐μm focused laser pulses have been observed on clean annealed Al single‐crystal targets with (111), (001), and (110) surface‐plane orientations. At energy densities ≳37 J/cm2 the slip banding is not consistent with thermal stress, implying that evaporative compression is the dominant mechanism. This is supported by evidence from neutral particle emission. Possible evidence of thermal stress is present in slip banding observed near and below the threshold for melting. The relationship of observed slip to target orientation can be a valuable source of information on laser‐induced stress fields.
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79.20.Ds Laser-beam impact phenomena
62.20.F- Deformation and plasticity
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Tungsten as a marker in thin‐film diffusion studies

G. J. van Gurp, D. Sigurd, and W. F. van der Weg

Appl. Phys. Lett. 29, 159 (1976); http://dx.doi.org/10.1063/1.89007 (3 pages) | Cited 26 times

Online Publication Date: 28 August 2008

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Vacuum‐deposited tungsten of about 30‐Å thickness has been used as a diffusion marker in the reaction between a thin Co film and Si. In order to produce a discontinuous W film, it is necessary first to deposit a Sn film with island structure and then W, after which the Sn is dissolved. It was found by MeV He+ backscattering analysis that the W is located at the Co‐Co2Si interface, which means that Co is the dominant diffuser in Co2Si.
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66.30.-h Diffusion in solids
68.60.-p Physical properties of thin films, nonelectronic

Room‐temperature mesa lasers grown by selective liquid phase epitaxy

D. W. Bellavance and J. C. Campbell

Appl. Phys. Lett. 29, 162 (1976); http://dx.doi.org/10.1063/1.89008 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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A new monolithic mesa laser structure grown by liquid phase epitaxy through openings in a silicon nitride mask is reported. The optical feedback is provided by vertical as‐grown crystalline facets. Double heterojunction lasers have been grown with this new structure and room‐temperature operation has been achieved.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.82.-m Integrated optics

Single‐transverse‐mode injection lasers with embedded stripe layer grown by molecular beam epitaxy

T. P. Lee and A. Y. Cho

Appl. Phys. Lett. 29, 164 (1976); http://dx.doi.org/10.1063/1.89009 (3 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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Lateral current confinement was achieved in injection lasers with embedded stripes selectively grown by molecular beam epitaxy. A single transverse mode was obtained at currents 4–6 times threshold with a 5‐μm‐wide stripe.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology

Pulsed room‐temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)

J. J. Coleman, N. Holonyak, M. J. Ludowise, P. D. Wright, R. Chin, W. O. Groves, and D. L. Keune

Appl. Phys. Lett. 29, 167 (1976); http://dx.doi.org/10.1063/1.89010 (3 pages) | Cited 26 times

Online Publication Date: 28 August 2008

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Pulsed room‐temperature operation of LPE In1−xGaxP1−zAsz double heterojunction (DH) laser diodes at short wavelength is described (Jth≲2×104 A/cm2, λ∼6470 Å, heterobarrier ΔE∼137 meV). The differential quantum efficiency of these diodes is ηext∼5%, and is considered to be low because of large diode size, thick active region, probably some layer mismatch and growth defects, and relatively poor heat sinking. The temperature dependence of threshold current density (Jth∼J0 expT/T0, T0∼74 °K) is presented in the range 77–300 °K and is compared with similar diodes having smaller heterobarriers and which, as expected, exhibit poorer performance (smaller T0).
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.60.Fi Electroluminescence

Radiative transitions of photoexcited electrons between Landau levels in n‐InSb

E. Gornik, V. T. Nguyen, and T. C. Damen

Appl. Phys. Lett. 29, 169 (1976); http://dx.doi.org/10.1063/1.89011 (3 pages)

Online Publication Date: 28 August 2008

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We report the first observation of radiation corresponding to transitions of photoexcited electrons between the two lowest Landau levels in n‐InSb at 2 K. These excited electrons are produced by irradiating a high‐purity n‐InSb sample (n=2×1013 cm−3) with a 10.6‐μm CO2 laser beam. From the study of the radiated power we determine an excited electron density of about 6×1012 cm−3 for an emission frequency of 100 cm−1 and a pump intensity of 2×106 W cm−2.
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78.60.-b Other luminescence and radiative recombination
79.20.Ds Laser-beam impact phenomena
78.45.+h Stimulated emission
78.30.Hv Other nonmetallic inorganics

Ultraviolet laser action in He‐Ag and Ne‐Ag mixtures

J. R. McNeil, W. L. Johnson, G. J. Collins, and K. B. Persson

Appl. Phys. Lett. 29, 172 (1976); http://dx.doi.org/10.1063/1.89012 (3 pages) | Cited 22 times

Online Publication Date: 28 August 2008

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We report eight new laser transitions which span the wavelength region from 220 to 400 nm. Six of the ultraviolet transitions are observed in Ne‐Ag mixtures and two are observed in He‐Ag mixtures. The 227.8‐ and 224.3‐nm laser transitions of Ag II, 4d3D2‐5p3P01 and 4d1S0‐5p1P01 respectively, are the shortest‐wavelength cw laser transitions reported in the literature to date. Output characteristics of the ultraviolet laser transitions as a function of buffer gas pressure and discharge current are presented. The strongest laser transition 4d85s2 1G4→4d95p3F03, at 318.1 nm, provides single‐line peak output power of 350 mW. The output power does not appear to saturate at the limit of our input current, 50 A.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
34.80.Dp Atomic excitation and ionization

Single‐pulse coherent anti‐Stokes Raman scattering

Won B. Roh, Paul W. Schreiber, and J. P. E. Taran

Appl. Phys. Lett. 29, 174 (1976); http://dx.doi.org/10.1063/1.89013 (3 pages) | Cited 81 times

Online Publication Date: 28 August 2008

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A new technique for use in coherent anti‐Stokes Raman scattering experiments allows the simultaneous generation of an entire Q‐branch spectrum of the anti‐Stokes radiation from a molecular gas using a single laser pulse. With this technique the stringent requirements of the previous techniques concerning laser linewidth and frequency stability are significantly relaxed. The excellent temporal resolution (20 nsec) makes the technique very attractive for temperature and concentration measurements of molecular gases, even in nonstationary media.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
51.70.+f Optical and dielectric properties

Intracavity second‐harmonic generation in a Nd pentaphosphate laser

S. R. Chinn

Appl. Phys. Lett. 29, 176 (1976); http://dx.doi.org/10.1063/1.89014 (4 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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We have achieved cw second‐harmonic generation using an intracavity Ba2NaNb5O15 doubler crystal in a low‐power NdP5O14 laser pumped by a dye laser. Our results show the feasibility of obtaining visible (0.525 μm) second‐harmonic radiation from similar lasers pumped by near‐infrared semiconductor sources.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Stark‐tuned resonances of N15H2D with CO2 laser lines

G. L. Tangonan and R. L. Abrams

Appl. Phys. Lett. 29, 179 (1976); http://dx.doi.org/10.1063/1.89015 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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The CO2 laser spectroscopy of gas mixtures of N15H2D and N15HD2 has been studied. Four new resonances with the P (28), P (26), P (10), and R (18) lines have been observed. The applicability of these new resonances to Stark cell stabilization of CO2 lasers is discussed.
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33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Low‐threshold cw Raman laser

K. O. Hill, B. S. Kawasaki, and D. C. Johnson

Appl. Phys. Lett. 29, 181 (1976); http://dx.doi.org/10.1063/1.89016 (3 pages) | Cited 17 times

Online Publication Date: 28 August 2008

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Continuous‐wave Raman oscillation has been obtained employing single‐mode glass fibers in a Fabry‐Perot resonator configuration. The pump‐power input to the Raman laser required to reach threshold is 5 W of which approximately 50% is coupled into the fiber. The dominant oscillation of the Raman laser is at 499.1 nm with a 488.0‐nm pump source.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.81.-i Fiber optics
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Measuring pulsed picometer‐displacement vibrations by optical interferometry

David Vilkomerson

Appl. Phys. Lett. 29, 183 (1976); http://dx.doi.org/10.1063/1.89017 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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Optical interferometers are very sensitive if they operate at the point halfway between the peak and minimum of detected intensity. By introducing a 90° phase shift between orthogonal polarizations in the reference beam, the interferometer signals due to each polarization are in quadrature; squaring and summing the signals effectively stabilizes the operating point of the interferometer at the high‐sensitivity point, independent of the large low‐frequency variations in optical‐path difference caused by ambient disturbances. This method has been used to make stable (±0.5 dB) measurements of 2.5‐MHz ultrasound pulses of 1‐pm displacement.
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07.60.Ly Interferometers
43.58.+z Acoustical measurements and instrumentation
06.60.Jn High-speed techniques (microsecond to femtosecond)
82.40.-g Chemical kinetics and reactions: special regimes and techniques

cw generation of multiple Stokes and anti‐Stokes Brillouin‐shifted frequencies

K. O. Hill, D. C. Johnson, and B. S. Kawasaki

Appl. Phys. Lett. 29, 185 (1976); http://dx.doi.org/10.1063/1.89018 (3 pages) | Cited 30 times

Online Publication Date: 28 August 2008

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Continuous‐wave laser action in multiply Brillouin‐shifted spectral lines in a novel Fabry‐Perot optical‐fiber resonator is reported. Oscillation has been observed over a 200‐GHz bandwidth and a total of 14 Brillouin‐shifted lines have been detected. This Brillouin laser configuration is potentially a source of mode‐locked picosecond pulses.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.50.-p Quantum optics

Copper oxide as the metal source in a discharge‐heated copper vapor laser

R. S. Anderson, B. G. Bricks, and T. W. Karras

Appl. Phys. Lett. 29, 187 (1976); http://dx.doi.org/10.1063/1.89019 (2 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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Copper oxide has been used as the lasant in a copper vapor laser producing up to 2 W average power at 12 kHz repetition rate. Operation could be sustained for several hours at over 1 W using radiative cooling to maintain the thermal balance.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges
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