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15 Aug 1976

Volume 29, Issue 4, pp. 223-275


Coexistence of two charge density waves of different symmetry in transition metal dichalcogenide 4Hb‐TaS2

J. Narayan

Appl. Phys. Lett. 29, 223 (1976); http://dx.doi.org/10.1063/1.89043 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Electron diffraction studies of 4Hb‐TaS2 have shown that layers with octahedral (OC) and trigonal prismatic (TP) coordination undergo independent transitions to charge density wave states similar to those in 1T‐TaS2 (pure OC) and 2H‐TaS2 (pure TP), respectively. This is in agreement with the transitions observed in physical properties such as the electrical resistivity, magnetic susceptibility, and heat capacity for this material.
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64.70.K- Solid-solid transitions
61.05.J- Electron diffraction and scattering
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Permanently stored echoes in powdered materials

S. Kupca, I. Maartense, H. P. Kunkel, and C. W. Searle

Appl. Phys. Lett. 29, 224 (1976); http://dx.doi.org/10.1063/1.89044 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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A permanent echo following a two‐pulse write sequence which has been observed from piezoelectric powders is also observed in other types of powders. It is shown that a simple model in which the echo originates from the mechanical alignment of particles is consistent with all known echo properties.
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77.65.-j Piezoelectricity and electromechanical effects
72.50.+b Acoustoelectric effects
81.65.-b Surface treatments

New piezoelectric crystal: Synthetic fresnoite (Ba2Si2TiO8)

Masakazu Kimura, Yoshio Fujino, and Tsutomu Kawamura

Appl. Phys. Lett. 29, 227 (1976); http://dx.doi.org/10.1063/1.89045 (2 pages) | Cited 29 times

Online Publication Date: 28 August 2008

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A fresnoite (Ba2Si2TiO8) single crystal was grown from the melt by the Czochralski method. Synthetic fresnoite has an electromechanical coupling factor in the thickness shear mode of k15=0.28, and a resonance‐frequency temperature coefficient in this mode of Tfr=−33 ppm/°C. Fresnoite is considered to be superior to Ba2Ge2TiO8 for various piezoelectric applications because of the absence of microtwins observed in Ba2Ge2TiO8.
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77.65.-j Piezoelectricity and electromechanical effects
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Temperature and wavelength dependence of the photoenhancement of nonlinear surface‐wave convolution

T. C. Lim, E. A. Kraut, F. J. Morin, and J. R. Oliver

Appl. Phys. Lett. 29, 229 (1976); http://dx.doi.org/10.1063/1.89046 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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Temperature‐dependent structure in the photoenhancement of nonlinear surface‐acoustic‐wave convolution on ZnO is reported. Measurements of the temperature dependence of surface‐wave convolution without light, thermally stimulated conductivity, and photoconductivity suggest that the photoenhancement effect in ZnO is sensitive to trapping and surface preparation. A possible model for the dependence of photoenhancement on photon wavelength is proposed.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
72.40.+w Photoconduction and photovoltaic effects
85.60.-q Optoelectronic devices

Ablation‐driven targets for electron‐beam fusion: Density problem with very low‐Z ablators

M. A. Sweeney

Appl. Phys. Lett. 29, 231 (1976); http://dx.doi.org/10.1063/1.89047 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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The behavior of DT‐filled implosion targets with very low‐Z (carbon) ablators irradiated by 1‐MeV electrons is compared to that with intermediate‐ and high‐Z ablators. The inner part of the pusher is of lower entropy due to decreased bremsstrahlung heating. The DT is shielded from compression until later in the energy pulse, when it is more strongly compressed. However, thicker ablators transfer less energy to the pusher; hence, diamond‐carbon ablators perform better than graphite‐carbon. Precompression of graphite‐carbon with a laser does not reduce the minimum power required for break‐even, but does lead to increased gain above break‐even.
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28.52.-s Fusion reactors
52.40.Mj Particle beam interactions in plasmas
42.62.-b Laser applications

Amplitude and phase modulation accompanying laser beam trapping in plasmas

M. D. Feit and J. A. Fleck

Appl. Phys. Lett. 29, 234 (1976); http://dx.doi.org/10.1063/1.89048 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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The self‐trapping of laser beams in underdense plasmas or the propagation of laser beams in preformed favorable electron density distributions can be accompanied by gross distortions of pulse shape and spectrum. A simple theory is used to estimate the magnitude of these effects.
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52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Pressure dependence of the electron density in electron‐beam‐excited rare‐gas plasmas

C. W. Werner, E. Zamir, and E. V. George

Appl. Phys. Lett. 29, 236 (1976); http://dx.doi.org/10.1063/1.89049 (4 pages) | Cited 24 times

Online Publication Date: 28 August 2008

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The peak electron density in e‐beam‐excited rare‐gas plasmas has been studied as a function of pressure, using inverse bremsstrahlung absorption techniques. It was found that the heavier rare gases exhibit broad maxima beyond which the peak electron density decreases monotonically with pressure. No maxima were observed in helium or neon over the pressure range investigated (0–400 psia). Data are presented along with a proposed theoretical explanation for the observed phenomena.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.40.Mj Particle beam interactions in plasmas

Multishock compression

B. Armstrong and B. Ahlborn

Appl. Phys. Lett. 29, 239 (1976); http://dx.doi.org/10.1063/1.89050 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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We have obtained multiple‐shock compression of a gas by the application of a tailored power pulse. Density increases well beyond the compression of a single strong shock were reached. No second shock could be launched if the second power step exceeded the first one by a factor of 10.
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47.40.Nm Shock wave interactions and shock effects
52.65.-y Plasma simulation
28.52.-s Fusion reactors
52.35.Tc Shock waves and discontinuities

cw 1→0 CO chemical laser: Optical pumping of CO

W. Q. Jeffers, H. Y. Ageno, C. E. Wiswall, and J. D. Kelley

Appl. Phys. Lett. 29, 242 (1976); http://dx.doi.org/10.1063/1.89030 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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The first operation of a cw CO chemical laser delivering nearly 1 W of power oscillation on the 1→0 vibrational band is reported. Experimental results and operating details with respect to 1→0 emission are discussed. Optical pumping of CO by the CO chemical laser is also reported; optically pumped absorption has been measured up to the 6→5 band.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.80.Xx Level crossing and optical pumping

Optical frequency conversion processes in atomic Rydberg states

A. M. F. Lau, W. K. Bischel, C. K. Rhodes, and R. M. Hill

Appl. Phys. Lett. 29, 245 (1976); http://dx.doi.org/10.1063/1.89031 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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We present an analysis of optically pumping Rydberg states in alkalis to generate coherent lasers in the infrared and far‐infrared spectral regions. Based on the previous accurate experimental and theoretical data on these states, our conclusion is that such laser systems can be operated either pulsed or cw and possess narrow linewidths, high gains, and considerable tunability. Wavelengths near 16, 12, 8.6, and 7.7 μm which are of interest for isotope separation are achievable with milliwatt power levels. Specific examples for Na vapor are given.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.60.+s Isotope separation and enrichment
42.62.-b Laser applications

Stability of multiatmosphere H2‐F2‐O2 mixtures for HF laser studies

Frank K. Truby

Appl. Phys. Lett. 29, 247 (1976); http://dx.doi.org/10.1063/1.89032 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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Explosion pressures for multiatmosphere mixtures of H2, F2, and O2 have been obtained. Mixtures exhibiting short‐term stability have been prepared with total pressures up to 11 atm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.33.Vx Reactions in flames, combustion, and explosions
82.30.-b Specific chemical reactions; reaction mechanisms

New CO2 laser bands in the 9–11‐μm wavelength region

J. Reid and K. Siemsen

Appl. Phys. Lett. 29, 250 (1976); http://dx.doi.org/10.1063/1.89033 (2 pages) | Cited 15 times

Online Publication Date: 28 August 2008

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Thirty‐six new lines in the 9–11‐μm wavelength region have been observed in continuous emission from a CO2 laser. These lines are identified as rotation‐vibration transitions in the (00°2‐[10°1, 02°1]I) and (00°2‐[10°1, 02°1]II) bands. Several hundred milliwatts of power have been obtained on most of these transitions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.70.Jg Line and band widths, shapes, and shifts

KrCl laser oscillation at 222 nm

J. R. Murray and H. T. Powell

Appl. Phys. Lett. 29, 252 (1976); http://dx.doi.org/10.1063/1.89034 (2 pages) | Cited 36 times

Online Publication Date: 28 August 2008

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Laser oscillation has been observed on the 2Σ+ 1/2‐2Σ+ 1/2 band of KrCl at 222 nm in an electron‐beam‐excited mixture of argon, krypton, and chlorine. The laser performance and spectral features of KrCl and KrF are compared.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Jc Visible and ultraviolet spectra
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

Flexible infrared‐transmissive metal waveguides

E. Garmire, T. McMahon, and M. Bass

Appl. Phys. Lett. 29, 254 (1976); http://dx.doi.org/10.1063/1.89035 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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We report unexpectedly low‐loss optical transmission at 10.6 μm through a 1‐m‐long hollow rectangular metallic waveguide bent through 90° in a 50‐cm radius of curvature. This demonstrates that flexible infrared‐transmissive (FIT) waveguides can deliver CO2 laser power to targets nearly as conveniently as optical fibers guide visible light.
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84.40.Az Waveguides, transmission lines, striplines
42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Temperature effects in Schottky‐barrier solar cells

B. Bhaumik and R. Sharan

Appl. Phys. Lett. 29, 257 (1976); http://dx.doi.org/10.1063/1.89036 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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It has been reported recently that the short‐circuit current Isc of silicon Schottky‐barrier solar cell increases with increasing operating temperature. The increase in Isc has been attributed to the availability of extra photons, belonging to the long‐wavelength range of the solar spectrum, due to the lowering of the forbidden energy gap of silicon with increasing temperature. The purpose of the present letter is to show that the contribution to the increase of Isc due to the mechanism mentioned above is negligible and cannot explain the experimental results. Instead, it has been found that good agreement with experimental results is obtained when the increase in Isc with increasing temperature is calculated by taking the change of the absorption coefficient of the semiconductor with temperature at all wavelengths.
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84.60.Jt Photoelectric conversion
73.30.+y Surface double layers, Schottky barriers, and work functions

MOS measurement of oxygen recoils from As implantation into silicon dioxide

A. Goetzberger, D. J. Bartelink, J. P. McVittie, and J. F. Gibbons

Appl. Phys. Lett. 29, 259 (1976); http://dx.doi.org/10.1063/1.89037 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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The depth distribution of oxygen recoils from As implantation was studied by employing MOS surface state techniques. Arsenic was implanted into an SiO2 film on Si such that the recoil oxygen reached the silicon interface. By varying oxide thickness, the depth distribution could be determined. The distribution at greater depth is exponential with a characteristic length of 220 Å for an As implant at 100 keV.
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61.72.U- Doping and impurity implantation

Experimental demonstration of high‐power fast‐rise‐time switching in silicon junction semiconductors

O. S. F. Zucker, J. R. Long, V. L. Smith, D. J. Page, and P. L. Hower

Appl. Phys. Lett. 29, 261 (1976); http://dx.doi.org/10.1063/1.89038 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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Experimental results are presented demonstrating fast turn‐on and high power‐handling capability in light‐activated silicon junction (PNPN) devices. Rise time to 2 ns, rate of current rise to 760 kA/μs, and switched power level of 10 MW were demonstrated.
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84.32.Dd Connectors, relays, and switches
82.40.-g Chemical kinetics and reactions: special regimes and techniques
85.30.Rs Thyristors
85.60.-q Optoelectronic devices

Thermal reaction of Ti evaporated on GaAs

O. Wada, S. Yanagisawa, and H. Takanashi

Appl. Phys. Lett. 29, 263 (1976); http://dx.doi.org/10.1063/1.89039 (3 pages) | Cited 35 times

Online Publication Date: 28 August 2008

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The thermal reaction of a vacuum‐evaporated Ti film with substrate GaAs has been investigated using Auger electron spectroscopy and x‐ray diffractometry. As accumulation and Ga depletion at the Ti/GaAs interface and Ga pileup in front of the As‐rich layer have been observed. The As‐rich and the Ga‐rich layers have been found to be composed of TiAs/Ti5As3 and Ti2Ga3/Ti5Ga4, respectively. It has also been found that the rate of the Ti‐GaAs reaction is governed by the interdiffusion process of Ti and As at the interface with an activation energy of 1.70±0.05 eV. The low diffusivity and relatively high Schottky barrier height of the present system facilitate the formation of useful Schottky barrier junctions.
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73.30.+y Surface double layers, Schottky barriers, and work functions
68.35.Md Surface thermodynamics, surface energies
66.30.J- Diffusion of impurities
85.30.Hi Surface barrier, boundary, and point contact devices

EPR evidence for a positively charged vacancy‐oxygen defect in silicon

Paul R. Brosious

Appl. Phys. Lett. 29, 265 (1976); http://dx.doi.org/10.1063/1.89040 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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A new EPR spectrum, labeled Si‐I3, has been observed in electron‐irradiated n‐type Czochralski silicon illuminated with approximately band‐gap light. The g‐tensor symmetry, the g shifts from the free‐electron value, and the temperature dependence of the spectrum amplitude lead to the conclusion that the spectrum originates from a positively charged vacancy‐oxygen defect.
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76.30.Mi Color centers and other defects
61.80.Fe Electron and positron radiation effects
61.72.J- Point defects and defect clusters

Thin‐film CuInSe2/CdS heterojunction solar cells

L. L. Kazmerski, F. R. White, and G. K. Morgan

Appl. Phys. Lett. 29, 268 (1976); http://dx.doi.org/10.1063/1.89041 (3 pages) | Cited 66 times

Online Publication Date: 28 August 2008

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The fabrication procedures and characteristics of several thin‐film p‐CuInSe2/n‐CdS heterojunction solar cells are presented. Two modes of operation (illumination through CuInSe2 or through CdS) are discussed. Efficiencies in the range of 4–5% are reported, under 100 mW/cm2 tungsten‐halogen illumination for 1.2‐cm2 devices. Included are the spectral response and J‐V characteristics for these photovoltaic junctions.
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84.60.Jt Photoelectric conversion
85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects

Bulk‐hardened Sm‐Co‐Cu‐Fe 2:17 magnets

A. Menth and H. Nagel

Appl. Phys. Lett. 29, 270 (1976); http://dx.doi.org/10.1063/1.89042 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Sm(C00.87Cu0.13)z alloys were prepared with 7.2⩽z<8. Homogenization heat treatment yielded single‐phase 2:17 material for z≳7.2. For z=7.8 some of the Co was substituted by Fe. Homogenized alloys remained single phase for up to 15% Co substituted. Remanence values BR up to 12.1 kG were reached. Coercive fields IHC of 4 kOe were achieved by means of a low‐temperature heat treatment. The magnetization process implies that pinning of the Bloch walls is responsible for the coercivity mechanism.
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07.55.Db Generation of magnetic fields; magnets
85.70.-w Magnetic devices
75.60.-d Domain effects, magnetization curves, and hysteresis
81.30.Bx Phase diagrams of metals, alloys, and oxides

Ion acceleration schemes employing a slow space‐charge wave

S. V. Yadavalli

Appl. Phys. Lett. 29, 272 (1976); http://dx.doi.org/10.1063/1.89051 (4 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Four different ion acceleration schemes that employ a slow space‐charge wave on an electron beam are suggested and discussed. Also, some of the basic characteristics of such schemes are pointed out.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.75.Di Ion and plasma propulsion
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
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