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1 Sep 1976

Volume 29, Issue 5, pp. 277-321


Acoustic properties of sputtered glass at microwave frequencies

R. D. Weglein

Appl. Phys. Lett. 29, 277 (1976); http://dx.doi.org/10.1063/1.89063 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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The published literature contains little information on the acoustic properties of thin dielectric films produced by sputter deposition. The longitudinal velocity and impedance of a sputter‐deposited glass film, one‐quarter wavelength thick, has been measured in the vicinity of 400 MHz. Such a layer produces a near‐optimum acoustic power transfer between sapphire and water. Curve fitting the predicted return loss against frequency to the experimental impedance transformer response provides a convenient method for the determination of the layer’s acoustic properties.
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77.55.-g Dielectric thin films
68.60.-p Physical properties of thin films, nonelectronic
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Parametric resonance of systems with time‐varying dissipation

D. B. Batchelor

Appl. Phys. Lett. 29, 280 (1976); http://dx.doi.org/10.1063/1.89064 (2 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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A prototype of a system with periodically time‐varying dissipation is analyzed. It is found that parametric excitation can occur even if the average dissipation is positive, although it is necessary that the dissipation be negative (amplification) over part of the cycle. The pump amplitude threshold and unstable phase angle are found for the unstable region near ω1=2ω0. It is also shown that a periodic instability cannot be dynamically stabilized by periodically varying the dissipation.
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84.30.Bv Circuit theory
45.05.+x General theory of classical mechanics of discrete systems
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

In‐depth heating by an intense relativistic electron beam

F. C. Perry and M. M. Widner

Appl. Phys. Lett. 29, 282 (1976); http://dx.doi.org/10.1063/1.89065 (3 pages)

Online Publication Date: 28 August 2008

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The dynamic response of a planar target irradiated by a tightly pinched intense relativistic electron beam is found to be very sensitive to in‐depth heating by the beam due to x‐ray deposition and to diode voltage fluctuations. We find that voltage fluctuations are primarily responsible for the observed wave structure preceding the large‐amplitude shock wave while x‐ray deposition affects the response to a lesser extent. The implications of these results for electron‐beam fusion target and accelerator designs are noted.
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28.52.-s Fusion reactors
47.40.Nm Shock wave interactions and shock effects
52.75.Di Ion and plasma propulsion
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Ejection of material from shocked surfaces

J. R. Asay, L. P. Mix, and F. C. Perry

Appl. Phys. Lett. 29, 284 (1976); http://dx.doi.org/10.1063/1.89066 (4 pages) | Cited 26 times

Online Publication Date: 28 August 2008

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Velocity interferometry and double‐pulse holography have been used to study material ejected from surfaces which are impulsively loaded with plane shock waves. Experiments performed on aluminum shocked to 25 GPa (250 kbar) provide the average mass and velocity distribution as well as the spatial distribution of material ejected from the surface. A total mass of about 3 μg/cm2 was ejected when the shock arrived at the surface in the present experiments, and a substantial part of this material resulted from jetting at small pits on the surface.
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62.50.-p High-pressure effects in solids and liquids
79.90.+b Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)
42.40.Kw Holographic interferometry; other holographic techniques

Distributed feedback buried heterostructure diode laser

R. D. Burnham, D. R. Scifres, and W. Streifer

Appl. Phys. Lett. 29, 287 (1976); http://dx.doi.org/10.1063/1.89067 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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We report room‐temperature operation of a buried heterostructure distributed feedback diode laser. The device operates in a single TE polarized longitudinal mode over a temperature range from 232 to 324 K and exhibits a temperature sensitivity of 0.72 Å/K. In comparison, the variation for a similar Fabry‐Perot diode is 3.4 Å/K.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Single‐crystal Sr2Nb2O7 film optical waveguide deposited by rf sputtering

Akihiko Ishitani and Masakazu Kimura

Appl. Phys. Lett. 29, 289 (1976); http://dx.doi.org/10.1063/1.89068 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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A new optical waveguide of a single‐crystal Sr2Nb2O7 film grown onto a b‐plate Sr2Ta2O7 substrate by rf sputtering is reported. Waveguide propagation loss was 7.6 dB/cm for the TE0 mode at 6328 Å. An increased oxygen concentration in the sputtering gas is effective in lowering the optical waveguide propagation loss.
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42.79.Gn Optical waveguides and couplers
78.20.-e Optical properties of bulk materials and thin films
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology

Miniaturized cw LiNdP4O12 laser pumped with a semiconductor laser

Masatoshi Saruwatari, Tatsuya Kimura, and Kenju Otsuka

Appl. Phys. Lett. 29, 291 (1976); http://dx.doi.org/10.1063/1.89069 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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Room‐temperature cw operation of a miniaturized LNP laser pumped with a 0.87‐μm semiconductor laser is reported. This device has a low threshold, 140 μW, for an Ar ion laser pump, which corresponds to 83 μW at 0.87 μm, and shows nearly single longitudinal mode operation, even at 10 times above threshold. By using a 0.80‐μm 25‐mW semiconductor laser pump and by an optimized output coupling design, 3.8‐mW output and 15% optical conversion efficiency are expected.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Elastomeric optical waveguide modulators

J. Maher, R. L. Schank, and G. Pfister

Appl. Phys. Lett. 29, 293 (1976); http://dx.doi.org/10.1063/1.89070 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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We report modulation of light in planar optical waveguides of polydimethylsiloxane (PDMS) elastomers by a reversible electromechanical deformation of the thin film in the beam path. Modulation frequencies up to 140 kHz have been demonstrated in Dow Corning DC410 PDMS.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Bandwidth‐limited subpicosecond pulse generation in mode‐locked cw dye lasers

I. S. Ruddock and D. J. Bradley

Appl. Phys. Lett. 29, 296 (1976); http://dx.doi.org/10.1063/1.89052 (2 pages) | Cited 33 times

Online Publication Date: 28 August 2008

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A cw Rhodamine 6G dye laser with a thin optically contacted saturable absorber cell has been mode locked over an operating frequency range of 598–615 nm to produce pulses with durations as short as 0.3 ps. The pulses, with sech2 intensity profiles, are practically bandwidth limited.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Image transfer through a curved light‐focusing plastic rod

Yasuji Ohtsuka, Takao Senga, and Toshiko Sugano

Appl. Phys. Lett. 29, 298 (1976); http://dx.doi.org/10.1063/1.89053 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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The imaging characteristic of a curved (curvature ρ) light‐focusing plastic rod (LFR), with a constant quadratic gradient of refractive index and radius rp is examined. It was found that curving a LFR produces limitation in the image field, and that the extent of the limiation is inversely proportional to arpρ according to a relation derived theoretically. In the case of a partially curved LFR, the image location was found to shift periodically with increase in the curved portion.
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42.30.-d Imaging and optical processing
81.40.Tv Optical and dielectric properties related to treatment conditions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Direct optically pumped multiwavelength CO2 laser

M. I. Buchwald, C. R. Jones, H. R. Fetterman, and H. R. Schlossberg

Appl. Phys. Lett. 29, 300 (1976); http://dx.doi.org/10.1063/1.89054 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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An HF laser was used to directly pump various isotopic forms of CO2. Intense laser emission was observed on numerous lines in the 4.3‐, 10.6‐, and 17‐μm regions. All observed 4.3‐ and 17‐μm CO2 laser emission lines were assigned. The pressure dependence of lasing spectra and laser pulse temporal features were examined.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Ea Infrared spectra
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
32.80.Xx Level crossing and optical pumping

High‐efficiency blazed grating couplers

Takashi Aoyagi, Yoshinobu Aoyagi, and Susumu Namba

Appl. Phys. Lett. 29, 303 (1976); http://dx.doi.org/10.1063/1.89055 (2 pages) | Cited 19 times

Online Publication Date: 28 August 2008

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High‐efficiency blazed grating couplers have been successfully realized by using an ion etching technique. We observed that a guided wave was radiated as the leaky wave which appears selectively either above or below the grating depending on the direction of the propagation of the guided wave. The coupling efficiency from the guided wave into one of the leaky waves was about 97% at the blaze angle of 30°.
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42.79.Dj Gratings
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Resonance‐enhanced infrared four‐wave mixing by infrared‐active molecules

Michael J. Pellin and James T. Yardley

Appl. Phys. Lett. 29, 304 (1976); http://dx.doi.org/10.1063/1.89056 (4 pages)

Online Publication Date: 28 August 2008

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We suggest that high‐efficiency frequency upconversion and downconversion can be achieved by four‐wave mixing in media containing infrared‐active molecules. The high‐efficiency results from the relatively large vibrational matrix elements and small energy denominators. Numerical calculations are presented for generation of radiation at 2ω1+ω2 in HCl where 2ω1 is tuned to an electric‐dipole‐forbidden vibration‐rotation transition. We also present some general considerations for four‐wave mixing in molecular media.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

Distributed feedback Pb1−xSnxTe double‐heterostructure lasers

J. N. Walpole, A. R. Calawa, S. R. Chinn, S. H. Groves, and T. C. Harman

Appl. Phys. Lett. 29, 307 (1976); http://dx.doi.org/10.1063/1.89057 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Distributed feedback laser operation is demonstrated in stripe‐geometry Pb1−xSnxTe double heterostructures grown by molecular‐beam epitaxy. The grating of 1.1 μm periodicity operates in first order near 745 cm−1 (13.4 μm) under pulsed conditions in a limited range of heat‐sink temperatuers (∼30–65 K) where both gain and the Bragg reflection condition can be achieved. The guide index ng≃6.1 is consistent with theoretical estimates. In Pb1−xSnxTe DH devices, by corrugating the surface after all epitaxy is completed, a large coupling coefficient for Bragg reflection can be achieved because the last confining layer can be made very thin and the grating aspect ratio large.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Stimulated and laser emission involving nitrogen isoelectronic impurities in AlxGa1−xAs (x=0.39, 77 °K)

Yunosuke Makita, Shun‐ichi Gonda, and Hachiro Ijuin

Appl. Phys. Lett. 29, 309 (1976); http://dx.doi.org/10.1063/1.89058 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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By optical pumping, laser emission was achieved at 77 °K involving those nitrogen atoms in direct‐gap AlxGa1−xAs (x=0.39), which were incorporated by ion implantation. The energy of laser emission of nitrogen‐implanted material was about 14.4 meV lower than that of nitrogen‐free material.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.45.+h Stimulated emission
78.40.Fy Semiconductors
78.60.-b Other luminescence and radiative recombination

ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2

U. Kaufmann, J. Schneider, and A. Räuber

Appl. Phys. Lett. 29, 312 (1976); http://dx.doi.org/10.1063/1.89059 (2 pages) | Cited 111 times

Online Publication Date: 28 August 2008

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The occurrence of phosphorus antisite defect centers on cation sites in GaP, CdSiP2, and ZnGeP2 has been demonstrated by electron spin resonance. The paramagnetic defect is identified by its characteristic hyperfine and ligand hyperfine interaction, representative for a 31P31P4 cluster. The possible role of the antisite lattice defect as a center of nonradiative recombination in LEC‐grown GaP is emphasized.
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76.30.Mi Color centers and other defects
61.72.J- Point defects and defect clusters
61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
71.55.Ht Other nonmetals

Synthesis and stability of Nb3Ge made by electron‐beam codeposition

A. B. Hallak, R. H. Hammond, and T. H. Geballe

Appl. Phys. Lett. 29, 314 (1976); http://dx.doi.org/10.1063/1.89060 (3 pages) | Cited 28 times

Online Publication Date: 28 August 2008

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Niobium‐germanium (Nb‐Ge) films which remain superconducting up to about 22.5 °K have been prepared using high‐rate (33–133 Å/sec) electron‐beam codeposition. The presence of oxygen in the deposition chamber is necessary for stabilizing the high‐Tc A15 phase. Analysis of Nb‐Ge films shows that oxygen extends, with some temperature dependence, the Ge‐rich range of the A15 phase with an accompanying decrease in the lattice constant. An amorphous component in the films is first detected below a deposition temperature of 800 °C. It increases rapidly at lower temperatures and becomes dominant at about 600 °C. The A15 phase diagram was determined for the first time for temperatures below 875 °C.
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74.70.-b Superconducting materials other than cuprates
81.20.-n Methods of materials synthesis and materials processing

Direct detection of the parametrically generated half‐harmonic voltage in a Josephson tunnel junction

J. Mygind, N. F. Pedersen, and O. H. Soerensen

Appl. Phys. Lett. 29, 317 (1976); http://dx.doi.org/10.1063/1.89061 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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The first direct observation of the parametrically generated half‐harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions a large‐amplitude microwave signal is emitted at fp provided the input power exceeds a threshold value. The results are compared to existing theory.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.25.N- Response to electromagnetic fields
78.70.Gq Microwave and radio-frequency interactions

Performance of multifilamentary Nb3Sn under mechanical load

D. S. Easton and R. E. Schwall

Appl. Phys. Lett. 29, 319 (1976); http://dx.doi.org/10.1063/1.89062 (3 pages) | Cited 16 times

Online Publication Date: 28 August 2008

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The critical current of a commercial multifilamentary Nb3Sn conductor has been measured under the application of uniaxial tension at 4.2 K and following bending at room temperature. Significant reductions in Jc are observed under uniaxial loading. Results are presented for a monolithic conductor manufactured by the bronze diffusion technique and for cable conductors formed by the tin‐dip technique.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
85.25.-j Superconducting devices
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