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15 Sep 1976

Volume 29, Issue 6, pp. 323-391

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Epitaxial structures with alternate‐atomic‐layer composition modulation

A. C. Gossard, P. M. Petroff, W. Weigmann, R. Dingle, and A. Savage

Appl. Phys. Lett. 29, 323 (1976); http://dx.doi.org/10.1063/1.89082 (3 pages) | Cited 91 times

Online Publication Date: 28 August 2008

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Epitaxial structures grown by alternate monolayer depositions of GaAs and AlAs are reported. As many as 104 alternate (100) layers of GaAs and AlAs as thin as 1.0±0.1 and 1.0±0.1 monolayers, respectively, were deposited by sequential molecular beam epitaxial growth on a (100)GaAs substrate. Transmission electron microscopy showed the resultant films to be perfectly epitaxial with layered composition modulation of the expected periodicity. Their electronic properties were studied by optical absorption and luminescence.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
78.20.-e Optical properties of bulk materials and thin films
81.20.-n Methods of materials synthesis and materials processing

Simple real‐time light valves

Werner E. L. Haas and Gary A. Dir

Appl. Phys. Lett. 29, 325 (1976); http://dx.doi.org/10.1063/1.89083 (4 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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A simple real‐time light valve based on selenium and the cholesteric‐nematic phase transition is described. The device is optically addressed and can be read out in real time with very intense white light sources without need for an optical blocking layer. Operation involves the absorption characteristics of the photoconductor and space‐charge‐limited currents. The principle can be extended to other combinations of photoconductors and electro‐optic effects.
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85.60.Pg Display systems
78.20.Jq Electro-optical effects
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
81.05.-t Specific materials: fabrication, treatment, testing, and analysis

Stored energy in a cold‐rolled metallic glass

H. S. Chen

Appl. Phys. Lett. 29, 328 (1976); http://dx.doi.org/10.1063/1.89084 (3 pages) | Cited 30 times

Online Publication Date: 28 August 2008

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The relaxation spectra of a cold‐rolled Pd‐Cu‐Si glass are very similar to that of the initially quenched glass, except for the low‐temperature peak at 400 °K. About 4% of expended energy is stored in the glass. A possible mechanism is that the stored energy arises from local heating and quenching in shear bands. The bandwidth and the stored energy in the shear bands are of the order of 2500 Å and 2.5×104 erg/cm2, respectively.
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62.20.F- Deformation and plasticity
61.72.Cc Kinetics of defect formation and annealing
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Ferromagnetic properties of some new metallic glasses

R. C. O’Handley, R. Hasegawa, R. Ray, and C.‐P. Chou

Appl. Phys. Lett. 29, 330 (1976); http://dx.doi.org/10.1063/1.89085 (3 pages) | Cited 87 times

Online Publication Date: 28 August 2008

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Continuously cast metallic glasses [METGLASR (trademark of the Allied Chemical Corporation) alloys] based on the transition metals (TM) iron, cobalt, and nickel can now be synthesized containing boron as the only metalloid. The different electron‐donor effects of boron and phosphorus are clearly seen for the first time; each atom of these metalloids gives ∼1.6 and 2.4 electrons, respectively, to the TM d bands. Extrapolation of the available magnetic moment data suggests a nonzero moment on nickel in (TM)80B20 glasses. The boron‐containing metallic glasses generally show higher Curie temperatures and room‐temperature saturation magnetizations than mixed‐metalloid glassy alloys of the same TM content.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
75.30.Cr Saturation moments and magnetic susceptibilities

Improvement of diffraction efficiency in surface‐acoustic‐optic devices by means of multilayered structure

J. Kushibiki, N. Chubachi, and K. Shibayama

Appl. Phys. Lett. 29, 333 (1976); http://dx.doi.org/10.1063/1.89086 (3 pages) | Cited 2 times

Online Publication Date: 28 August 2008

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A strain‐controlling film to change acoustic strain distributions in the interaction region between acoustic surface waves and optical guided waves is introduced to improve the Bragg‐diffraction efficiency in surface‐acoustic‐optic devices. An improvement of about 2 orders of magnitude has been achieved in the efficiency of TM0‐TM0 diffraction at an acoustic frequency of 130 MHz in a 2.0‐μm ZnO‐film optical waveguide with a strain‐controlling film of a 1.5‐μm‐thick fused‐quartz film, as predicted by the theory.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.79.Gn Optical waveguides and couplers

Behavior of low‐impedance relativistic electron diodes in converging magnetic gradients

D. A. Phelps, J. R. Oldenettel, P. Korn, and J. Shannon

Appl. Phys. Lett. 29, 335 (1976); http://dx.doi.org/10.1063/1.89087 (4 pages)

Online Publication Date: 28 August 2008

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The behavior of a large‐area field emission diode located in a 4:1 converging magnetic gradient is described. Evidence is presented that this technique significantly reduces the early‐time L/R decay into the nominal 3/4 Ω space‐charge‐limited impedance characteristic. The elimination of late‐time plasma closure in the diode gap is also demonstrated. Due to these characteristics, a significant reduction in the time‐averaged diode impedance and an improvement in the pulse‐line–diode energy transfer efficiency has been obtained—thereby permitting first observations of efficient matching to a sub‐ohm pulsed electron accelerator.
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29.27.Eg Beam handling; beam transport
41.75.Fr Electron and positron beams
84.47.+w Vacuum tubes

Photoelectrolysis of water with TiO2‐covered solar‐cell electrodes

H. Morisaki, T. Watanabe, M. Iwase, and K. Yazawa

Appl. Phys. Lett. 29, 338 (1976); http://dx.doi.org/10.1063/1.89088 (3 pages) | Cited 33 times

Online Publication Date: 28 August 2008

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A TiO2–solar‐cell hybrid structure has been used successfully as the anode electrode in the photoelectrolysis of water. The TiO2 films have been fabricated by chemical vapor deposition. Conversion efficiency of solar energy of about 0.1% has been attained in the preliminary experiment.
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82.47.-a Applied electrochemistry
84.60.Jt Photoelectric conversion
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Solution growth of metallopolymer films

K. L. Chopra, T. V. Rao, A. C. Rastogi, and S. K. Barthwal

Appl. Phys. Lett. 29, 340 (1976); http://dx.doi.org/10.1063/1.89071 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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A solution growth technique has been developed to obtain polymer films doped with high concentrations (up to 18% by weight of polymer) of metals such as Cu, Co, Ni, and Fe. Electron microscopy, EPR, and optical studies of Cu‐doped polyvinylchloride films show the existence of homogeneously distributed copper in colloidal, Cu+, and Cu2+ states.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.70.Dd Colloids

Nd‐doped yttrium aluminum garnet with improved fluorescent lifetime of the 4F3/2 state

S. Singh, W. A. Bonner, W. H. Grodkiewicz, M. Grasso, and L. G. Van Uitert

Appl. Phys. Lett. 29, 343 (1976); http://dx.doi.org/10.1063/1.89072 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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YAG:Nd polycrystals have been prepared in which the fluorescent lifetime of the 4F3/2 state is ∼420 μsec, in excellent agreement with the previously measured cross section and branching ratios. When such polycrystals are either fused or used to pull single crystals from melt, the fluorescent lifetime is reduced to ∼280 μsec. This is attributed to the creation of defects at high temperatures which can act as quenching centers. Various mechanisms for nonradiative decay of 4F3/2 are also discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
78.55.-m Photoluminescence, properties and materials
71.55.Ht Other nonmetals

Longitudinal mode beat intensities in a cw HF chemical laser

C. P. Wang and R. L. Varwig

Appl. Phys. Lett. 29, 345 (1976); http://dx.doi.org/10.1063/1.89073 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Longitudinal mode beat intensities in a free‐running cw HF chemical laser have been investigated. A simple expression was derived that describes the variation of beat intensity with tuning frequency. Experimental observations of the variation of beat intensity with tuning frequency in a HF chemical laser agree with the theoretical prediction.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Shock wave introduction of gas into relativistic e‐beam‐pumped lasers and drift tubes

R. W. Dreyfus

Appl. Phys. Lett. 29, 348 (1976); http://dx.doi.org/10.1063/1.89074 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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The pressure differential across a shock wave provides the low pressure required to launch an electron beam from a field‐emission cathode and the high pressure needed for electron‐beam‐pumped gas lasers. This new pumping arrangement has eliminated the conventionally employed fragile anode foil, which causes scattering of the electron beam and which limits energy density and repetition rate. Initial results indicate that longitudinally pumped gas lasers have output powers an order of magnitude greater than that attained with the anode foil.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
51.70.+f Optical and dielectric properties
52.35.Tc Shock waves and discontinuities

Observation of stimulated emission in KrCl

J. Gary Eden and Stuart K. Searles

Appl. Phys. Lett. 29, 350 (1976); http://dx.doi.org/10.1063/1.89075 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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Stimulated emission at 222.9±0.1 nm in KrCl has been observed in electron‐beam‐excited Ar/Kr/Cl2 mixtures. Approximately 50 kW of laser output in a 30‐ns pulse with ∼14% output coupling has been obtained. Both the peak spontaneous emission wavelength and vibrational spacing (ωe) of KrCl∗ are in agreement with the alkali‐halide analog (RbCl) model. The kinetics of this new rare‐gas–halide laser molecule are briefly discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Jc Visible and ultraviolet spectra

Enhanced localized degradation and anomalous emission spectra of Ga1−xAlxAs double heterostructure lasers induced by fabrication processes

D. H. Newman, R. F. Godfrey, A. R. Goodwin, and D. F. Lovelace

Appl. Phys. Lett. 29, 353 (1976); http://dx.doi.org/10.1063/1.89076 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Oxide‐insulated stripe geometry double heterostructure lasers have been fabricated with and without a deep (1.3 μm) zinc diffusion prior to alloyed contacting. The two processes were found to result first in emission spectra indicative of significant differences in the point defect complex densities in the device active regions, and second in distinctly different modes of dark effect degradation.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Formation and quenching of XeF and KrF electronic excited states

J. Gary Eden and Stuart K. Searles

Appl. Phys. Lett. 29, 356 (1976); http://dx.doi.org/10.1063/1.89077 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Electron collisional quenching of the KrF∗ and XeF∗ electronically excited state populations in e‐beam‐excited plasmas has been observed. Also, significant enhancement of both XeF∗ and KrF∗ fluorescence was obtained in low‐pressure (p<225 Torr) Xe (or Kr)/F2 mixtures with the addition of 12.5–200 Torr helium. Spectral measurements show that this enhancement is not due to helium collisional relaxation of the exciplex vibrational manifold. These effects prohibit a straightforward estimate of the XeF∗ or KrF∗ spontaneous radiative lifetimes.
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31.50.Df Potential energy surfaces for excited electronic states
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
34.80.Gs Molecular excitation and ionization

Modified absorption method to determine level population densities in a cataphoresis type of He‐metal laser discharge

T. Goto, M. Mori, and S. Hattori

Appl. Phys. Lett. 29, 358 (1976); http://dx.doi.org/10.1063/1.89078 (3 pages) | Cited 19 times

Online Publication Date: 28 August 2008

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A method was developed with which we could easily obtain exact absorption coefficients not only of visible lines but also of ultraviolet lines to determine atom or ion densities in energy levels in a cataphoresis type of positive column gas discharge. This method was applied to a typical He‐metal laser, He‐Cd+ laser, and it has been confirmed that the method gives an accurate value of the Cd+ ion density in the Cd(II) ground level 5s2S1/2.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.-r Atomic spectra
32.70.Cs Oscillator strengths, lifetimes, transition moments
52.80.Hc Glow; corona

14‐ and 16‐μ gasdynamic CO2 lasers

T. J. Manuccia, J. A. Stregack, N. W. Harris, and B. L. Wexler

Appl. Phys. Lett. 29, 360 (1976); http://dx.doi.org/10.1063/1.89079 (3 pages) | Cited 30 times

Online Publication Date: 28 August 2008

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Laser action at 16 μ has been obtained between the (02°0) and (0110) levels as well as between the (10°0) and (0110) levels at 14 μ. A 9‐ or 10‐μ saturating pulse equilibrates the (001) level with either the (02°0) or (10°0) level and creates the transient 14‐ or 16‐μ inversion. Extraction efficiencies of 20% have been achieved on a single pulse. Repetition frequencies of 200 Hz have been achieved using a single Q‐switched cavity.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.60.+s Isotope separation and enrichment

Electrochemical studies of the viologen system for display applications

K. Belinko

Appl. Phys. Lett. 29, 363 (1976); http://dx.doi.org/10.1063/1.89080 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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The electrochemical and electro‐optical behavior of aqueous solutions of diheptyl viologen dibromide on tin oxide conductive glass electrodes was investigated. The viologen dication was found to undergo reduction in two distinct cathodic processes. The first cathodic step leading to the formation of the insoluble purple viologen complex was found to be reversible. The second reduction process was found to be irreversible and resulted in poisoning of the electrode surface. The failure mode of display devices based on the viologen system is attributed to the formation of this second reduction product.
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85.60.Pg Display systems
82.45.-h Electrochemistry and electrophoresis
78.20.Jq Electro-optical effects

Low‐threshold room‐temperature embedded heterostructure lasers

C. P. Lee, I. Samid, A. Gover, and A. Yariv

Appl. Phys. Lett. 29, 365 (1976); http://dx.doi.org/10.1063/1.89081 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Room‐temperature embedded double‐heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.45.+h Stimulated emission
78.60.Fi Electroluminescence
68.55.-a Thin film structure and morphology

Interferometric real‐time display of cw dye laser wavelength with sub‐Doppler accuracy

J. L. Hall and S. A. Lee

Appl. Phys. Lett. 29, 367 (1976); http://dx.doi.org/10.1063/1.89089 (3 pages) | Cited 147 times

Online Publication Date: 28 August 2008

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We describe an automatic fringe‐counting interferometer with real‐time wavelength readout for cw laser sources. Sub‐Doppler absolute wavelength accuracy (∼2×10−7) is demonstrated with saturated absorption spectroscopy in neon.
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42.55.Mv Dye lasers
07.60.-j Optical instruments and equipment
07.60.Ly Interferometers

X‐ray replication of masks using the synchrotron radiation produced by the ACO storage ring

Bernard Fay, Jacques Trotel, Yves Petroff, Robert Pinchaux, and Pierre Thiry

Appl. Phys. Lett. 29, 370 (1976); http://dx.doi.org/10.1063/1.89090 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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Synchrotron radiation emitted by the 540‐MeV storage ring of the University of Orsay was used to replicate masks with submicron features on PMM resist. Exposure times were of the order of a few minutes. The masks used were gold (1500–3500 Å thick) on 2.5‐μm Mylar. Calculations show that the wavelengths principally involved in making the exposure are at 540 MeV centered around 14 Å and at 400 MeV around 50 Å.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
29.20.db Storage rings and colliders
07.85.-m X- and γ-ray instruments

Improved light‐output linearity in stripe‐geometry double‐heterostructure (Al,Ga)As lasers

R. W. Dixon, F. R. Nash, R. L. Hartman, and R. T. Hepplewhite

Appl. Phys. Lett. 29, 372 (1976); http://dx.doi.org/10.1063/1.89091 (3 pages) | Cited 51 times

Online Publication Date: 28 August 2008

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Nonlinearities in the optical‐power‐output–versus–current characteristics of (Al,Ga)As stripe‐geometry double‐heterostructure lasers are found to be associated with excessive spectral broadening, asymmetries in the outputs from the two mirrors, and spatial movements of the lasing mode within the width of the stripe. Manifestations of these nonlinearities are severely deleterious in a variety of optical fiber communication applications. It is shown that the impact of these defects may be significantly reduced, with little lasing‐threshold‐current penalty, by fabricating devices with narrower stripe widths.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics

Suppression of defect formation in GaAs layers by removing oxygen in LPE

Makoto Ishii, Hirofumi Kan, Wataru Susaki, and Yoshihiro Ogata

Appl. Phys. Lett. 29, 375 (1976); http://dx.doi.org/10.1063/1.89092 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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The oxygen concentration in the ambient gas during liquid phase epitaxial growth processes was quantitatively analyzed. The oxygen influences the formation of defects such as saucer pits and so‐called ’’dark spot defects’’ and the carrier concentration of grown layers. Reducing the oxygen concentration less than 0.03 ppm, the defect densities drastically decrease in GaAs grown layers.
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68.55.-a Thin film structure and morphology
81.05.Cy Elemental semiconductors

Oxide thickness dependence of high‐energy‐electron‐, VUV‐, and corona‐induced charge in MOS capacitors

G. W. Hughes, R. J. Powell, and M. H. Woods

Appl. Phys. Lett. 29, 377 (1976); http://dx.doi.org/10.1063/1.89093 (3 pages) | Cited 16 times

Online Publication Date: 28 August 2008

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The radiation‐induced flatband voltage shift of MOS capacitors using dry‐O2‐grown SiO2 is shown to vary as the square of oxide thickness for penetrating 1‐MeV electron radiation and linearly with oxide thickness for nonpenetrating 10.2‐eV photon radiation. Corona discharge experiments on unmetallized portions of the same oxidized silicon wafers also show a flatband voltage shift linearly dependent upon oxide thickness. These experiments provide strong evidence to support a simple generation, transport, and trapping model for radiation charging of SiO2. The results also show that for dry oxides the density of trapped holes near the Si‐SiO2 interface is indepenent of oxidation time.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.-x Physical radiation effects, radiation damage
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.Tv Field effect devices

Observation of large dc supercurrents at nonzero voltages in Josephson tunnel junctions

J. Niemeyer and V. Kose

Appl. Phys. Lett. 29, 380 (1976); http://dx.doi.org/10.1063/1.89094 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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Large dc supercurrents at nonzero voltages are observed in dc current‐biased small Josephson tunnel junctions of the type PbIn‐ (PbIn)xOy‐Pb with critical current densities j0 ranging from 2×102 to 2×105 A/cm2. The dependence of the hysteresis on j0 and the form of the subharmonic energy gap structure are compared with the theoretical results of McDonald et al.
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74.50.+r Tunneling phenomena; Josephson effects
73.40.Rw Metal-insulator-metal structures

Thermomechanical heat generation in copper and a Nb‐Ti superconducting composite

D. S. Easton, D. M. Kroeger, and A. Moazed

Appl. Phys. Lett. 29, 382 (1976); http://dx.doi.org/10.1063/1.89095 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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Heat generation via tensile stresses in both pure copper and a superconducting Nb‐Ti composite was studied at 300 and 4.2 K. Linear thermoelastic behavior was found at room temperature but not at 4.2 K. At 4.2 K, stress levels on the order of 88 MPa and 0.1% strain produced energy losses of 1 to 2×105 J/m3. When stress cycled under adiabatic conditions, the composite showed a temperature increase with each cycle as a result of nonlinear (hysteretic) stress/strain behavior.
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74.20.-z Theories and models of superconducting state
65.40.De Thermal expansion; thermomechanical effects
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
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