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1 Oct 1976

Volume 29, Issue 7, pp. 393-449


Temperature noise and dielectric loss in pyroelectric detectors

S. E. Stokowski

Appl. Phys. Lett. 29, 393 (1976); http://dx.doi.org/10.1063/1.89116 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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It is shown theoretically and experimentally that the presence of thermal conductance between a pyroelectric material and its environment affects significantly its measured dielectric loss. Depending on the details of the heat exchange with the environment, this thermal contribution to the measured dielectric loss tangent can be larger than the intrinsic loss tangent of the material, i.e., loss due to domain wall motion, defects, and impurities. In detectors fabricated from LiTaO3, temperature fluctuations due to this thermal conductance, known as temperature noise, are observed to limit the normalized detectivity (D∗).
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Gm Dielectric loss and relaxation
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.70.+m Noise processes and phenomena

Surface wave memory correlator with optical write‐in

S. Takada, K. Hoh, H. Hayakawa, and Y. Tokumaru

Appl. Phys. Lett. 29, 396 (1976); http://dx.doi.org/10.1063/1.89117 (2 pages)

Online Publication Date: 28 August 2008

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A surface wave memory device in which a light pulse emitted from a GaAs laser diode is used to store surface wave signals is described. The storage of 87‐MHz surface wave signals in surface states in silicon is obtained by using a light pulse with a duration of 0.5 nsec. Pulse compression experiments are also demonstrated by storing linear FM chirp signals with this method.
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43.60.+d Acoustic signal processing
72.50.+b Acoustoelectric effects
85.60.Dw Photodiodes; phototransistors; photoresistors
73.20.-r Electron states at surfaces and interfaces

High‐frequency shear instability in nematic liquid crystals

F. Scudieri

Appl. Phys. Lett. 29, 398 (1976); http://dx.doi.org/10.1063/1.89118 (2 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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The behavior of MBBA nematic liquid cells under an applied shear is studied at high frequency. It is shown that hydrodynamic roll instabilities can be excited. The rolls develop in a direction perpendicular to the shear motion of the cell plates. Interference between two roll patterns can be obtained with nonparallel glass plates of the cell.
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61.30.-v Liquid crystals
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity

Anisotropy of thermionic electron emission values for LaB6 single‐crystal emitter cathodes

P. H. Schmidt, D. C. Joy, L. D. Longinotti, H. J. Leamy, S. D. Ferris, and Z. Fisk

Appl. Phys. Lett. 29, 400 (1976); http://dx.doi.org/10.1063/1.89119 (2 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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Measurement of thermionic electron emission values for pointed LaB6 single‐crystal emitter cathodes has shown that 〈110〉 axial orientations yield emission values ten times higher than 〈100〉 orientations at 1545 °K. Minimum values were obtained for the 〈510〉 directions. These findings seem encouraging in achieving perhaps two orders of magnitude higher emission fluxes as compared to tungsten emitters.
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79.40.+z Thermionic emission
84.60.Ny Thermionic conversion
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Magnetic fields due to impurity grains in laser‐produced plasma

D. G. Colombant, D. A. Tidman, and N. K. Winsor

Appl. Phys. Lett. 29, 401 (1976); http://dx.doi.org/10.1063/1.89120 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Results of a numerical simulation model are given for the magnetic field produced by an impurity grain embedded in a dense inhomogeneous plasma.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.65.-y Plasma simulation

Multiple‐wire array load for high‐power pulsed generators

C. Stallings, K. Nielsen, and R. Schneider

Appl. Phys. Lett. 29, 404 (1976); http://dx.doi.org/10.1063/1.89121 (3 pages) | Cited 50 times

Online Publication Date: 28 August 2008

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Exploding wire loads have been used for several years to generate a hot dense plasma. For a generator with a rise time of tens of nsec and an impedance of 1 Ω or less, the inductance of the wire load and the tendency of current to flow outside the wire limits the energy that can be transferred to the wire. An array of several wires has now been used to lower the inductance and improve the energy transfer.
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52.50.Gj Plasma heating by particle beams
52.80.Pi High-frequency and RF discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.80.Qj Explosions; exploding wires

19F range‐energy curve in Si from 100 to 550 keV 

H. B. Dietrich and L. E. Plew

Appl. Phys. Lett. 29, 406 (1976); http://dx.doi.org/10.1063/1.89122 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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The range statistics for C, F, Ne, Al, and Si in Si recently published by Gibbons, Johnson, and Mylroie (GJM) are significantly different from the predictions of the LSS theory. This difference exists because in their calculation GJM made use of measured electronic stopping powers (Se) for channeled ions. The scaling procedure employed by GJM builds into their calculation the pronounced Z1 oscillations observed in the Se of channeled ions. Use of the measured electronic stopping powers was limited to N, O, P, Cl, Ar, and the above mentioned ions in Si. In order to make an experimental check of the scaling procedure employed the range‐energy curve for 19F in Si has been measured between 100 and 550 keV. The following observations can be made: (1) The experimental range‐energy curve for 19F is in good agreement with LSS calculations and (2) the measured ranges are significantly less than the predictions of Gibbons, Johnson, and Mylroie. These results are interpreted as strong evidence against the validity of scaling Eisen’s measurements of the electronic stopping power for channeled ions over to random trajectories.
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29.40.-n Radiation detectors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Particle arrival statistics in laser anemometry of turbulent flow

J. C. Erdmann and R. I. Gellert

Appl. Phys. Lett. 29, 408 (1976); http://dx.doi.org/10.1063/1.89099 (4 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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Spectral information on turbulent fluid flow can be obtained from the rate statistics of tracer particles imbedded in the flow. In particular, the particle velocity correlation function can be measured by a laser technique with a single focused beam, which also provides a means to assess the lag behavior of the particles. The method offers significant simplifications of commonly used instrumentation.
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47.27.Gs Isotropic turbulence; homogeneous turbulence
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion
06.30.Gv Velocity, acceleration, and rotation
42.62.-b Laser applications

Use of angular‐momentum selection rules for laser isotope separation

L. C. Balling and J. J. Wright

Appl. Phys. Lett. 29, 411 (1976); http://dx.doi.org/10.1063/1.89100 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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A method is proposed for laser separation of certain isotopes with nonzero nuclear spin which relies only on the angular‐momentum selection rules for the absorption of circularly polarized light.
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28.60.+s Isotope separation and enrichment
32.80.Fb Photoionization of atoms and ions
32.80.Hd Auger effect (including Coster-Krönig transitions)
42.62.-b Laser applications

Organic solar cells of hydroxy squarylium

V. Y. Merritt and H. J. Hovel

Appl. Phys. Lett. 29, 414 (1976); http://dx.doi.org/10.1063/1.89101 (2 pages) | Cited 70 times

Online Publication Date: 28 August 2008

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The photovoltaic properties of Schottky barrier solar cells made from thin films (100–1000 Å) of the organic dye hydroxy squarylium have been studied. Amorphous and polycrystalline films, prepared by evaporation and solution casting, have strong absorption over the entire visible spectrum. The highest power conversion efficiency measured under AMO white light was 0.1% (0.14 mW/cm2 input intensity); this decreased to 0.02% at 135 mW/cm2. The decrease in η with intensity is characteristic of organic materials, but is usually much more pronounced. For 8500‐Å monochromatic light the quantum efficiency was as high as 2.3% and the conversion efficiency was 0.2% (1 mW/cm2).
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Directional acoustic measurements by laser Doppler velocimeters

M. K. Mazumder, R. L. Overbey, and M. K. Testerman

Appl. Phys. Lett. 29, 416 (1976); http://dx.doi.org/10.1063/1.89102 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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Laser Doppler velocimeters (LDV’s) are used as velocity microphones to measure sound pressure level in the range of 90–130 dB, spectral components, and two‐point correlation functions for acoustic noise source identification. Close agreement between LDV and microphone data is observed. Directional sensitivity and the ability to measure remotely make LDV’s useful tools for acoustic measurement where placement of any physical probe is difficult or undesirable, as in the diagnosis of jet noise.
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43.58.+z Acoustical measurements and instrumentation
42.62.-b Laser applications
47.27.Sd Turbulence generated noise

Stimulated VUV emission from carbonlike ions in laser‐produced plasmas

J. Davis and K. G. Whitney

Appl. Phys. Lett. 29, 419 (1976); http://dx.doi.org/10.1063/1.89103 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Population inversion for transitions in the VUV are predicted theoretically in laser‐produced plasmas. The calculations are based on a time‐dependent model that treats the excitation, ionization, and recombination dynamics of a dense argon plasma. Gains in excess of 103 cm−1 are obtained for the 3s‐3p transition in carbonlike argon XIII for over 1000 psec.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.20.Fs Electron collisions
34.80.Dp Atomic excitation and ionization

High‐efficiency high‐average‐power second‐harmonic generation with CdGeAs2 

N. Menyuk, G. W. Iseler, and A. Mooradian

Appl. Phys. Lett. 29, 422 (1976); http://dx.doi.org/10.1063/1.89104 (3 pages) | Cited 12 times

Online Publication Date: 28 August 2008

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Average second‐harmonic power at 5.3 μm exceeding 0.75 W with a 17% power conversion efficiency has been obtained by pumping a CdGeAs2 crystal, cooled to near 77 K, with a Q‐switched CO2 laser. Average and peak conversion efficiencies of 21 and 30%, respectively, were achieved at a pulse rate of 1.5 kHz. In cw operation the crystal gave a second‐harmonic output of 73 mW with a conversion efficiency near 0.5%.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Active mode locking of the XeF laser

C. P. Christensen, L. W. Braverman, W. H. Steier, and C. Wittig

Appl. Phys. Lett. 29, 424 (1976); http://dx.doi.org/10.1063/1.89105 (2 pages) | Cited 21 times

Online Publication Date: 28 August 2008

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Active mode locking of the 351‐nm XeF excimer laser is reported. Pulse durations of ⩽2 nsec were obtained using acousto‐optic gain modulation in a Blumlein‐drive laser. The pulsewidth is believed to be limited by the short time duration of the optical gain.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Electron‐beam‐controlled discharge pumping of the XeF laser

J. A. Mangano, J. H. Jacob, and J. B. Dodge

Appl. Phys. Lett. 29, 426 (1976); http://dx.doi.org/10.1063/1.89106 (3 pages) | Cited 25 times

Online Publication Date: 28 August 2008

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Laser action of XeF has been obtained in atmospheric‐pressure mixtures of 0.1% NF3, 0.4% Xe, and 99.5% Ar with electron‐beam‐controlled discharge pumping. The mean discharge current and voltage were 75 A/cm2 and 11 kV/cm, respectively, at 4 atm total pressure. The high‐energy E‐beam current was 12 A/cm2. Mechanisms for creating XeF∗ in a discharge are discussed. Physical processes which limit the intrinsic efficiency to 0.3% in the present device are also discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Backward Raman amplification and pulse steepening in silica fibers

Chinlon Lin and Rogers H. Stolen

Appl. Phys. Lett. 29, 428 (1976); http://dx.doi.org/10.1063/1.89107 (4 pages) | Cited 16 times

Online Publication Date: 28 August 2008

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Backward Raman amplification in a fused‐silica fiber waveguide is studied using two dye lasers for its possible application as an amplifier and a pulse sharpening device. Greater than 90% of pump to signal conversion is observed together with a preferential amplification of the signal pulse front. Short pulse generation and complete pump depletion are also observed in a single dye laser pumped fiber Raman generator‐amplifier system.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.81.-i Fiber optics
42.79.Gn Optical waveguides and couplers

Electroluminescent p‐InP/n‐CdS heterodiodes

Sigurd Wagner, J. L. Shay, T. N. Bhar, L. M. Schiavone, K. J. Bachmann, and E. Buehler

Appl. Phys. Lett. 29, 431 (1976); http://dx.doi.org/10.1063/1.89108 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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p‐InP/n‐CdS heterodiodes electroluminesce under forward bias. In diodes prepared by in vacuo growth of CdS layers on InP substrates, the spectrum is determined by recombination through deep interface states. Anneals at 500–600 °C shift the emission to energies close to the band gap of InP.
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85.60.Jb Light-emitting devices
73.20.Hb Impurity and defect levels; energy states of adsorbed species
84.60.Jt Photoelectric conversion
78.60.Fi Electroluminescence

HgSe, a highly electronegative stable metallic contact for semiconductor devices

J. S. Best, J. O. McCaldin, T. C. McGill, C. A. Mead, and J. B. Mooney

Appl. Phys. Lett. 29, 433 (1976); http://dx.doi.org/10.1063/1.89109 (2 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Schottky barriers formed by the highly electronegative substance HgSe on n‐ZnS and on n‐ZnSe have been characterized by capacitance‐voltage and photoresponse measurements. The barriers are about 0.5 eV greater than Au barriers on these n‐type substrates. HgSe contacts are stable under ambient conditions and are easily fabricated, making them attractive for device use.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
84.32.Dd Connectors, relays, and switches
85.30.Hi Surface barrier, boundary, and point contact devices

Optimum bulk series resistance of the Schottky‐barrier solar cell

P. K. Dubey

Appl. Phys. Lett. 29, 435 (1976); http://dx.doi.org/10.1063/1.89110 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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We suggest that the efficiency of a Schottky‐barrier (SB) solar cell could be subtantially increased (by as much as 2%) by making an optimum choice of the bulk series resistance (or the dopant concentration in the semiconductor) rather than minimizing it to zero. Thus we show that there exists an optimum nonzero bulk series resistance of SB solar cell for which the power conversion efficiency is maximum. For an n‐type GaAs/Au SB solar cell, this optimum series resistance is calculated to be 0.2 Ω corresponding to a dopant concentration of 8×1013 cm−3.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Carbon‐ion‐implanted gallium arsenide

B. K. Shin

Appl. Phys. Lett. 29, 438 (1976); http://dx.doi.org/10.1063/1.89111 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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Sheet‐resistivity and Hall‐effect measurements were made on C‐ion‐implanted GaAs after annealings at 600, 700, 800, or 900 °C. A doping efficiency of up to 50% was obtained in the 900 °C‐annealed sample which is much higher than the 2–8% reported previously. The electrical profile of this sample indicated that most of the implanted C became substitutional. The electrical compensation level, on the other hand, remained relatively high (0.3–0.6) throughout the profiling range and is responsible for the low doping efficiency obtained in the C‐implanted p‐type GaAs.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors

Use of a graphical representation of the Hall effect for the quality control of epitaxially grown PbTe layers

A. Lopez‐Otero

Appl. Phys. Lett. 29, 441 (1976); http://dx.doi.org/10.1063/1.89112 (2 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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A simple procedure based on a graphical representation of the Hall effect is used to quickly identify the electrical properties of PbTe epitaxial layers. This procedure helps to avoid possible misinterpretations of isolated Hall‐effect measurements.
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81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology

A model of flux pinning by grain boundaries in type‐II superconductors

C. S. Pande and M. Suenaga

Appl. Phys. Lett. 29, 443 (1976); http://dx.doi.org/10.1063/1.89113 (2 pages) | Cited 23 times

Online Publication Date: 28 August 2008

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A relationship between pinning force Fp and grain size D in type‐II superconductors derived on the basis of interaction of fluxoids with dislocations forming the grain‐boundary walls is reported. While confirming approximately the experimentally observed Fp∝1/D relationship, the theory predicts a peak in Fp at a0/D≃0.2, where a0 is the lattice constant of the flux line lattice.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Walker‐type velocity oscillations of magnetic domain walls

G. P. Vella‐Coleiro

Appl. Phys. Lett. 29, 445 (1976); http://dx.doi.org/10.1063/1.89114 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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We report stroboscopic observations of the radial motion of a magnetic bubble domain wall in an epitaxial LuGdAl iron garnet film. At high drive fields, initial velocities up to 9500 cm/sec were measured, and the domain wall was observed to move backwards during the field pulse, in agreement with calculations based on the Walker model.
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75.60.Ch Domain walls and domain structure

Observation of the optoacoustic effect in the microwave region

Gerald Diebold and David L. McFadden

Appl. Phys. Lett. 29, 447 (1976); http://dx.doi.org/10.1063/1.89115 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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The microwave analog of the optoacoustic effect has been observed. Collisional relaxation of absorbed microwave energy between Zeeman magnetic sublevels of gaseous molecular oxygen results in the production of an acoustical signal which is detected by a sensitive microphone.
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33.55.+b Optical activity and dichroism
33.90.+h Other topics in molecular properties and interactions with photons (restricted to new topics in section 33)
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
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