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15 Oct 1976

Volume 29, Issue 8, pp. 453-518

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Orientation dependence of defect structure in EFG silcion ribbons

L. C. Garone, C. V. Hari Rao, A. D. Morrison, T. Surek, and K. V. Ravi

Appl. Phys. Lett. 29, 511 (1976); http://dx.doi.org/10.1063/1.89123 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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Sustained growth of long lengths of silicon ribbons by the edge‐defined film‐fed growth (EFG) technique is shown to result in the attainment of an ’’equilibrium’’ defect structure and orientation by the crystals. The structure consists of parallel defect boundaries parallel to the edges of the ribbon with a ribbon orientation of {110} 〈211〉. The influence of seed orientation on the attainment of this structure has been examined.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.Nn Stacking faults and other planar or extended defects
81.05.Cy Elemental semiconductors
61.05.C- X-ray diffraction and scattering

Coercive force of new Cu‐substituted samarium cobalt alloys

Haruhumi Senno, Yoshio Tawara, and Eiichi Hirota

Appl. Phys. Lett. 29, 514 (1976); http://dx.doi.org/10.1063/1.89149 (3 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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It was found that sintered alloys having a composition of approximately z=8 in Sm(Co0.85Fe0.05Cu0.10)z exhibit a high coercive force on the order of 10 kOe, for 5–10‐μm average grain size. Magnetization and demagnetization curves showed that the coercive force is controlled by a nucleation process. Attempts were made to achieve a high density without serious grain growth by means of high‐pressure isostatic compaction and hot pressing, resulting in 96% of the density and 7‐μm average grain size. With this approach, Br=10.3kG, IHc=10.2 kOe, and a maximum energy product of 22.0 MG Oe were achieved.
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75.50.Bb Fe and its alloys
75.30.Gw Magnetic anisotropy

Applicability of the Fano plot to secondary electron (SE) yield data

Mihir Parikh and Ryuichi Shimizu

Appl. Phys. Lett. 29, 516 (1976); http://dx.doi.org/10.1063/1.89150 (2 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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SE yield (δ0) data can be interpreted in terms of the Fano plot, thereby yielding a simple formulation of δ0 with respect to the incident electron energy T and a correlation between the mean ionization potential 〈I〉 and a parameter in the Fano plot.
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79.20.Hx Electron impact: secondary emission
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Erratum: Antenna properties and operation of metal‐barrier‐metal devices in the infrared and visible regions

Shyh Wang

Appl. Phys. Lett. 29, 518 (1976); http://dx.doi.org/10.1063/1.89197 (1 page)

Online Publication Date: 28 August 2008

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Abstract Unavailable
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43.10.Vx Errata
73.40.Rw Metal-insulator-metal structures
84.40.Ba Antennas: theory, components and accessories
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