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1 Nov 1976

Volume 29, Issue 9, pp. 521-625

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Piezoelectric DMOS strain transducers

K. W. Yeh and R. S. Muller

Appl. Phys. Lett. 29, 521 (1976); http://dx.doi.org/10.1063/1.89169 (2 pages) | Cited 3 times

Online Publication Date: 28 August 2008

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High‐frequency strain transducers consisting of n‐channel piezoelectric DMOS transistors have been constructed. These transducers have detected surface acoustic waves at 20 and 28 MHz. The transducers exhibit gauge factors of the order of 105 at dc.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.30.Tv Field effect devices
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
07.07.Mp Transducers

Energy dependence of amorphizing implant dose in silicon

John R. Dennis and Edward B. Hale

Appl. Phys. Lett. 29, 523 (1976); http://dx.doi.org/10.1063/1.89170 (2 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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The radiation‐induced transformation from crystalline to amorphous silicon was studied using ion implantation. The ion energy was varied from 20 to 180 keV for Li+, N+, Ne+, Ar+, and Kr+. The energy dependence of the critical amorphizing dose was determined by electron spin resonance. Comparison of the data with theoretical calculations of the energy density deposited into atomic processes showed good agreement. This energy‐dependent agreement gave evidence that energy density is important to the transformation at both low and high implantation temperatures.
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61.72.U- Doping and impurity implantation
61.72.Cc Kinetics of defect formation and annealing
76.30.Mi Color centers and other defects

A mesa p‐n diode array acoustic surface wave convolver

R. Joly

Appl. Phys. Lett. 29, 525 (1976); http://dx.doi.org/10.1063/1.89171 (3 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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A new type of airgap convolver has been constructed. It uses a mesa p‐n diode array, instead of the usual silicon slab, and narrow rails for supporting the diode array. Several different modes of operation for imaging have been demonstrated with this device.
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43.58.+z Acoustical measurements and instrumentation
72.50.+b Acoustoelectric effects

Correlation with the storage convolver

P. G. Borden and G. S. Kino

Appl. Phys. Lett. 29, 527 (1976); http://dx.doi.org/10.1063/1.89172 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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A p‐n junction type storage convolver has been used to correlate FM chirps with time‐bandwidth products of approximately 90, and to correlate echoes from an acoustic A‐scan system which have been badly distorted by the source transducer.
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43.60.+d Acoustic signal processing
43.58.+z Acoustical measurements and instrumentation
72.50.+b Acoustoelectric effects

Effect of surface stress on the natural frequency of thin crystals

M. E. Gurtin, X. Markenscoff, and R. N. Thurston

Appl. Phys. Lett. 29, 529 (1976); http://dx.doi.org/10.1063/1.89173 (2 pages) | Cited 58 times

Online Publication Date: 28 August 2008

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Within the framework of classical beam theory it is shown that a strain‐independent surface stress has no effect on the natural frequency of a thin cantilever beam. Therefore, the experimental results of Lagowski, Gatos, and Sproles must have a different explanation.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity
43.40.+s Structural acoustics and vibration

Sources of oxidation‐induced stacking faults in Czochralski silicon wafers

G. A. Rozgonyi, S. Mahajan, M. H. Read, and D. Brasen

Appl. Phys. Lett. 29, 531 (1976); http://dx.doi.org/10.1063/1.89174 (3 pages) | Cited 17 times

Online Publication Date: 28 August 2008

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Using optical microscopy/etch pit techniques for the delineation of defects in {100} Czochralski silicon wafers we have made a one‐to‐one correlation between bulk stacking faults in oxidized wafers and etch hillocks identified at the same sites before oxidation. Transmission electron microscopy of the hillock defects shows them to be clusters of precipitates ranging in size from 0.01 to 0.3 μm. A discussion of these stacking‐fault nucleation sites in light of previous work on ’’swirl’’ defects in float‐zone wafers and attempts at preoxidation gettering are also presented along with a model for the formation of the extrinsic stacking faults.
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61.72.Nn Stacking faults and other planar or extended defects
64.75.-g Phase equilibria
68.35.Md Surface thermodynamics, surface energies

Magnetic inhibition of surface flashover of insulators in vacuum

Kenneth D. Bergeron and Dillon H. McDaniel

Appl. Phys. Lett. 29, 534 (1976); http://dx.doi.org/10.1063/1.89175 (3 pages) | Cited 9 times

Online Publication Date: 28 August 2008

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The possibility of preventing high‐voltage surface flashover of insulators in vacuum by means of a strong magnetic field perpendicular to the electric field and parallel to the insulator surface is investigated theoretically. A simple model predicts that with the right choice of insulating material one can design diodes and transmission lines so that the magnetic field from the line current inhibits the secondary‐electron‐emission avalanche which is believed to play an important role in the flashover process.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
77.22.Jp Dielectric breakdown and space-charge effects
79.20.Hx Electron impact: secondary emission
52.80.Vp Discharge in vacuum

Observation of inverted population levels in the FM‐1 spherator

S. Suckewer, R. J. Hawryluk, M. Okabayashi, and J. A. Schmidt

Appl. Phys. Lett. 29, 537 (1976); http://dx.doi.org/10.1063/1.89168 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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Inversions in the population of excited levels in hydrogen and He II were observed in the FM‐1 spherator. The inversion increases strongly as the ratio of the decay time of the electron temperature to the decay time of the electron density was decreased. Time‐dependent numerical calculations of the populations were in good agreement with the experimental measurements. More general calculations for high‐Z hydrogenlike ions are discussed.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
42.60.-v Laser optical systems: design and operation
32.80.Xx Level crossing and optical pumping
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Secondary electron energy distributions for gold as excited by C Kα (277 eV) and Al Kα (1487 eV) x rays

Burton L. Henke, Jerel A. Smith, and David T. Attwood

Appl. Phys. Lett. 29, 539 (1976); http://dx.doi.org/10.1063/1.89176 (3 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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The secondary electron energy distributions for a gold photocathode as excited by C Kα (277 eV) and Al Kα (1487 eV) x rays have been measured. The shapes of the energy distributions are essentially the same for these two x‐ray photon excitation energies. For thick evaporated gold samples on glass substrates (at 150 °C and 3×10−8 Torr), the secondary electron energy distributions peak at about 1 eV and have a FWHM of about 4 eV. As measured immediately after ion cleaning, the distributions peak at about 2 eV and have a FWHM of about 6.6 eV. Approximately 5 h after ion cleaning, the measured distributions appear as those obtained before ion cleaning. The work function of the evaporated gold photocathode temporarily increases by 1 eV upon ion cleaning.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions

Limitation in growth time of stimulated Compton scattering in x‐ray regime

Akira Hasegawa, Kunioki Mima, P. Sprangle, H. H. Szu, and V. L. Granatstein

Appl. Phys. Lett. 29, 542 (1976); http://dx.doi.org/10.1063/1.89177 (3 pages) | Cited 21 times

Online Publication Date: 28 August 2008

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We present a classical theory of stimulated Compton scattering by an intense relativistic electron beam. The growth rates in the x‐ray regime are obtained for two types of excitation: (i) an incident electromagnetic wave and (ii) a spatially rippled static magnetic field. Nonlinear spread of the beam velocity distribution by the pump field reduces the growth rate. The limiting growth rate depends only on the beam quality and becomes ∼1 μsec−1 using the best available beam.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.27.Ny Relativistic plasmas

Dose dependence of the photon emission from sputtered aluminum atoms during helium irradiation

M. Braun and B. Emmoth

Appl. Phys. Lett. 29, 545 (1976); http://dx.doi.org/10.1063/1.89178 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Polycrystalline aluminum samples are irradiated with 40‐keV He+. At moderate target temperatures (∼0.3Tm) a prominent and distinct enhancement of the light intensity from sputtered excited aluminum atoms is observed after implantation to a critical dose of 4×1017 He+/cm2. It is shown that this effect is associated with a sudden increase in the erosion rate of Al and in the surface exfoliation due to radiation blistering. At higher target temperatures (∼0.7Tm) a less pronounced increase in the photon intensity and a different surface structure is observed.
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61.80.Jh Ion radiation effects
61.80.Lj Atom and molecule irradiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
28.41.Bm Fuel elements, preparation, reloading, and reprocessing

Laser‐induced shock waves in liquids

D. C. Emmony, M. Siegrist, and F. K. Kneubühl

Appl. Phys. Lett. 29, 547 (1976); http://dx.doi.org/10.1063/1.89179 (3 pages) | Cited 13 times

Online Publication Date: 28 August 2008

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High‐speed schlieren photography of the interaction of a TEA CO2 laser pulse with the surface of absorbing liquids shows the formation of a complex shock structure in the liquid. The shock structure in liquids with different absorption coefficients at 10.6 μm is compared. In carbon tetrachloride a cylindrical wave is generated in the bulk of the liquid in addition to the hemispherical wave which is formed at the liquid surface. The cylindrical wave leads the hemispherical one, and this separation is interpreted as differential attenuation in the initial phase. This implies a shock velocity above the sound speed within the first 0.5 μs.
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47.40.-x Compressible flows; shock waves
79.20.Ds Laser-beam impact phenomena
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

On the sputtering of binary compounds

P. K. Haff and Z. E. Switkowski

Appl. Phys. Lett. 29, 549 (1976); http://dx.doi.org/10.1063/1.89180 (3 pages) | Cited 18 times

Online Publication Date: 28 August 2008

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A simple physical model is presented to describe some aspects of the sputtering of compound targets. In particular, expressions are developed for the partial sputtering yields for binary systems in terms of the elemental sputtering rates, the stoichiometric concentrations, and surface binding energy. The partial yields depend nonlinearly on the bulk target concentrations. Comparison of the theoretical predictions with the data on sputtering of PtSi, NiSi, and Cu3Au indicates that the general features are well described.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.20.-n Methods of materials synthesis and materials processing

High‐sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMS

K. Wittmaack

Appl. Phys. Lett. 29, 552 (1976); http://dx.doi.org/10.1063/1.89181 (3 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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Secondary ion mass spectrometry has been used for depth profiling of arsenic and phosphorus in silicon. High‐sensitivity analysis down to concentrations of a few 1017 atoms/cm2 could be achieved by energy discrimination against mass interfering molecular secondary ions.
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81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors
07.75.+h Mass spectrometers
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Phase tuning in optical directional coupler

Osamu Mikami and Juichi Noda

Appl. Phys. Lett. 29, 555 (1976); http://dx.doi.org/10.1063/1.89182 (2 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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A new phase‐tuning method for an optical directional coupler fabricated in a c‐plate LiNbO3 by TiO2 diffusion is presented. The method consists of applying a bias voltage to an additional electrode set closely outside the modulation electrodes. The propagation constants of the two waveguides could be made equal by a bias voltage of 5 V. The modulation voltage of 8 V was unaffected by the bias voltage.
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42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

High‐power vibration‐rotation emission from 14NH3 optically pumped off resonance

E. J. Danielewicz, E. G. Malk, and P. D. Coleman

Appl. Phys. Lett. 29, 557 (1976); http://dx.doi.org/10.1063/1.89183 (3 pages) | Cited 14 times

Online Publication Date: 28 August 2008

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Off‐resonance optical pumping of the sR (5,0) line of the ν2 fundamental band of 14NH3 has yielded over 2.0 kW of superfluorescent emission on the sP (7,0) transition at 12.079 μm. Emission at 11.460 μm attributed to the aP (3,1) transition was also observed by pumping the aR (1,1) absorption line with a 1‐MW CO2 TEA laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.80.Xx Level crossing and optical pumping

Light‐focusing plastic rod prepared by photocopolymerization of methacrylic esters with vinyl benzoates

Yasuji Ohtsuka and Ichiro Nakamoto

Appl. Phys. Lett. 29, 559 (1976); http://dx.doi.org/10.1063/1.89184 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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A new preparation method of a light‐focusing plastic rod (LFR) is reported, where the photocopolymerization of methacrylic esters (M1) such as methyl methacrylate (MMA) with vinyl benzoates (M2) such as vinyl benzoate (VB), vinyl o‐chlorobenzoate, and vinyl o,p‐dichloro‐benzoate was carried out. The M1‐M2 mixture placed in a glass tube was exposed to uv light by rotating a glass tube about its axis. LFR prepared from a MMA‐VB pair has a quadratic gradient constant with a refractive index A= (3∼11) ×10−3 mm−2, an internal loss of light transmission IL= (3∼12) dB/m, and a ratio of the radius of the imaging region to the rod radius (ri/rp) =0.5∼0.7.
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42.79.-e Optical elements, devices, and systems
81.40.Tv Optical and dielectric properties related to treatment conditions
42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Phase‐matched generation of 2314 Å in KB5O8⋅4 H2O

K. Kato

Appl. Phys. Lett. 29, 562 (1976); http://dx.doi.org/10.1063/1.89185 (2 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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Third‐harmonic generation of a ruby laser has been achieved in a potassium pentaborate tetrahydrate (KB5O8⋅4 H2O) crystal through type‐1 frequency mixing of the fundamental and second‐harmonic radiation. An over‐all power conversion efficiency of 0.2% was obtained.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

KrF‐laser‐pumped tunable dye laser in the ultraviolet

D. G. Sutton and Gene A. Capelle

Appl. Phys. Lett. 29, 563 (1976); http://dx.doi.org/10.1063/1.89186 (2 pages) | Cited 6 times

Online Publication Date: 28 August 2008

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Tunable laser emission in the 335–346‐nm region has been obtained from a 0.01M solution of p‐terphenyl in p‐dioxane. The dye laser was excited by a 20‐nsec pulse from a Blumlein‐driven KrF laser oscillating at 249 and 250 nm.
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42.55.Mv Dye lasers

Optical waveguides formed by low‐energy electron irradiation of silica

A. J. Houghton and P. D. Townsend

Appl. Phys. Lett. 29, 565 (1976); http://dx.doi.org/10.1063/1.89187 (2 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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We have demonstrated that low‐energy electron irradiation of silica glass leads to a sufficient change in the refractive index to form optical waveguides. A peak enhancement of at least 0.9% is achieved by the deposition of some 1024 keV cm−3 and is stable to at least 200 °C. This energy requirement is consistent with measurements of lattice compaction in silica which also reaches a maximum value when ∼1024 keV cm−3 is deposited in ionization or electronic excitations. (The change is thought to be the result of irradiation damage). It is noted that changes induced in this way might have application in both integrated optics and graded index fibers.
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42.79.Gn Optical waveguides and couplers
61.80.Fe Electron and positron radiation effects

Tunable quantum counter for far‐infrared radiation

H. Lengfellner, G. Pauli, W. Heisel, and K. F. Renk

Appl. Phys. Lett. 29, 566 (1976); http://dx.doi.org/10.1063/1.89188 (2 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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We report on a quantum counter which converts far‐infrared radiation to visible light. The 891‐Ghz radiation of an HCN laser, absorbed in optically pumped ruby by the transition Ē (2E) →2Ā (2E), was detected by an increased R2 fluorescence. By Zeeman splitting of the 2E levels the narrow‐band detector was tuned to the laser line.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Background suppression in coherent Raman spectroscopy

J. J. Song, G. L. Eesley, and M. D. Levenson

Appl. Phys. Lett. 29, 567 (1976); http://dx.doi.org/10.1063/1.89189 (3 pages) | Cited 66 times

Online Publication Date: 28 August 2008

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Background signals which appear in Coherent anti‐Stokes Raman spectroscopy and in the Raman‐induced Kerr effect can be eliminated using polarization technqiues based upon four‐wave mixing. Specific polarization conditions will suppress all signals with the exception of those arising from Raman modes. The interference between resonant and background contributions is eliminated, and undistorted line shapes are obtained.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
78.30.C- Liquids

New photoelectrochemical display

M. Yamana

Appl. Phys. Lett. 29, 570 (1976); http://dx.doi.org/10.1063/1.89190 (2 pages) | Cited 4 times

Online Publication Date: 28 August 2008

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A new photoelectrochemical display utilizing the photoinduced reaction of benzyl viologen bromide on a p‐type GaP electrode is described. Writing time versus light intensity and other characteristics are given.
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85.60.Pg Display systems
82.50.-m Photochemistry
82.45.-h Electrochemistry and electrophoresis
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.

Efficient second‐harmonic generation in three‐dimensional LiNbO3 optical waveguide

Naoshi Uesugi and Tatsuya Kimura

Appl. Phys. Lett. 29, 572 (1976); http://dx.doi.org/10.1063/1.89191 (3 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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Highly efficient second‐harmonic generation using a titanium in‐diffused LiNbO3 three‐dimensional optical waveguide was performed with the cw Nd : YAG laser at 1.064‐μm wavelength. The phase‐matching condition to convert the TE00 fundamental frequency to the TM00 or TM20 second harmonic was demonstrated by adjusting the crystal temperature. The conversion efficiency is 1.5×10−4 at 2‐mW fundamental input power under the phase‐matching condition. By using a low‐loss LiNbO3 optical waveguide, equipped with highly reflective cavity mirrors on the input and output surfaces, parametric oscillation is expected.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

Arc suppression in CO2 laser discharges

Laurence E. Kline, L. J. Denes, and M. J. Pechersky

Appl. Phys. Lett. 29, 574 (1976); http://dx.doi.org/10.1063/1.89192 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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We have parameterized the times to arc formation in CO2 : N2 : He mixtures using a TEA configuration which produces homogeneous 10‐liter laser discharges. The onset of arcing is suppressed by increasing the helium or decreasing the CO2 concentration. Arcs are also suppressed by adding a low‐ionization‐potential seedant such as tripropylamine. Direct variation of the uv spark intensity which establishes the initial preionization has minimal impact on the arc formation process.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.80.Hc Glow; corona
42.55.Lt Gas lasers including excimer and metal-vapor lasers
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