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1 Nov 1976

Volume 29, Issue 9, pp. 521-625

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Self‐focusing parallel‐plate waveguide CO2 laser with uniform transverse excitation

H. Nishihara, T. Mukai, T. Inoue, and J. Koyama

Appl. Phys. Lett. 29, 577 (1976); http://dx.doi.org/10.1063/1.89167 (3 pages) | Cited 7 times

Online Publication Date: 28 August 2008

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A new type of waveguide CO2 laser with a previously proposed waveguide structure and a uniform transverse but horizontal (parallel to the waveguide surface) excitation is reported. The waveguide consists of a pair of slightly curved parallel plates which have a low‐loss transmission and a self‐focusing property; flat mirrors are set directly at both ends of the waveguide. The laser provides 30 W peak power at the repetition frequency of 3 kHz at pressures as high as 250 Torr. The output beam is 70% horizontally polarized, indicating laser oscillation mainly in the TE1 waveguide mode within the resonator.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Switching, storage, and erasure effects in a superconducting thin film

L. R. Testardi

Appl. Phys. Lett. 29, 579 (1976); http://dx.doi.org/10.1063/1.89193 (2 pages)

Online Publication Date: 28 August 2008

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Thin niobium films can be switched from a superconducting to a resistive state permanently by application of a short electrical pulse. Application of a short pulse of opposite polarity returns the film to the superconducting state.
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74.78.-w Superconducting films and low-dimensional structures
85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.32.Dd Connectors, relays, and switches
85.25.-j Superconducting devices

Electric‐discharge‐pumped nitrogen ion laser

James B. Laudenslager, Thomas J. Pacala, and Curt Wittig

Appl. Phys. Lett. 29, 580 (1976); http://dx.doi.org/10.1063/1.89194 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2008

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A preionized transverse electric‐discharge‐pumped N+2 charge‐transfer laser oscillating on the (B2Σ+u−X2Σ+g) transition of N+2 is reported. Peak power of 180 kW in a 8‐nsec FWHM laser pulse has been obtained with a 0.1% mixture of N2 in helium at a total pressure of 3 atm. The most intense laser oscillation occurs on the (0,1) vibrational transition at 427.8 nm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

Thin‐film dye laser with etched cavity

Chenming Hu and Seihee Kim

Appl. Phys. Lett. 29, 582 (1976); http://dx.doi.org/10.1063/1.89195 (4 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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We describe a thin‐film laser with a Fabry‐Perot cavity. The cavity is chemically etch into a (100) ‐cut silicon substrate and filled with rhodamine 6G doped polyurethane. Overfilling of the cavity provides the passage for the output. A nitrogen laser serves as pump source.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Passive mode locking and picosecond pulse generation in Nd:lanthanum beryllate

L. S. Goldberg and J. N. Bradford

Appl. Phys. Lett. 29, 585 (1976); http://dx.doi.org/10.1063/1.89151 (4 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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The passive mode‐locking characteristics of Nd:lanthanum beryllate (Nd:BEL) have been studied for the two linearly polarized laser transitions at 1.070 and 1.079 μm. Streak‐camera measurements of pulse duration and spectral broadening in the pulse‐train emission show that Nd:BEL can generate minimum‐bandwidth pulses of ⩽15 psec, some 2–3 times shorter than for Nd:YAG.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.72.-g Optical sources and standards

An independently controllable multiline laser resonator and its use in multifrequency injection locking

R. L. Sheffield, S. Nazemi, and A. Javan

Appl. Phys. Lett. 29, 588 (1976); http://dx.doi.org/10.1063/1.89152 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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A resonator configuration is described which makes it possible to obtain simultaneous laser oscillation on several preselected transitions without the coupling effect. This resonator is used in a multifrequency injection‐locking system in which the energy of an atmospheric TEA CO2 laser is extracted in several preselected transitions.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High‐sensitivity read‐write volume holographic storage in Bi12SiO20 and Bi12GeO20 crystals

J. P. Huignard and F. Micheron

Appl. Phys. Lett. 29, 591 (1976); http://dx.doi.org/10.1063/1.89153 (3 pages) | Cited 95 times

Online Publication Date: 28 August 2008

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Bi12SiO20 and Bi12GeO20 present the best known photorefractive sensitivity for read‐write volume holographic storage (S−1≃300 μJ/cm2) combined with high‐quality image reconstruction. Recording processes by photocarrier diffusion (no applied field) and by photocarrier drift are identified. The high photosensitivity is attributed to photocarrier displacements comparable to or larger than fringe spacings. Saturation diffraction efficiency at light power densities larger than 600 μW/cm2 at λ=514.5 nm occurs from complete photocarrier trap filling.
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42.40.Kw Holographic interferometry; other holographic techniques
78.20.Jq Electro-optical effects

A coefficients for spontaneous emission in CO

Allan J. Lightman and Edward R. Fisher

Appl. Phys. Lett. 29, 593 (1976); http://dx.doi.org/10.1063/1.89154 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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Simultaneous end light emission measurements of the first‐ and second‐overtone bands of CO have been obtained in a flowing CO‐N2‐He laser plasma. Interpretation of the band structure using A coefficients from Young and Eachus show consistent agreement with observation up to v=26. This agreement supports the use of these A coefficients in laser and kinetic applications.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Electron‐beam fabrication of 80‐Å metal structures

A. N. Broers, W. W. Molzen, J. J. Cuomo, and N. D. Wittels

Appl. Phys. Lett. 29, 596 (1976); http://dx.doi.org/10.1063/1.89155 (3 pages) | Cited 106 times

Online Publication Date: 28 August 2008

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Metal structures 100 Å high with sharply defined linewidths of 80 Å have been produced using an electron‐beam fabrication process. A contamination resist pattern is written with a 5‐Å 45‐keV scanning electron beam in a 100‐Å‐thick Au‐Pd film supported by a 100‐Å carbon foil. The unprotected Au‐Pd is removed by dc ion etching with 1‐keV Ar ions. Unlike most electron‐beam microfabrication processes, the resolution of the resulting structure is not limited by electron scattering, but by the grain size of the metal films. These structures should have direct application in a large number of device fabrication problems in electron and x‐ray beam technology and they should provide masks for other microfabrication processes such as x‐ray lithography.
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41.75.Fr Electron and positron beams
07.85.-m X- and γ-ray instruments
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Dissociation mechanism for solid‐phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) system

R. Pretorius, Z. L. Liau, S. S. Lau, and M‐A. Nicolet

Appl. Phys. Lett. 29, 598 (1976); http://dx.doi.org/10.1063/1.89156 (3 pages) | Cited 10 times

Online Publication Date: 28 August 2008

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Solid‐phase epitaxial growth (SPEG) of silicon was investigated by a tracer technique using radioactive 31Si formed by neutron activation in a nuclear reactor. After depositing Pd and Si onto activated single‐crystal silicon substrates, Pd2Si was formed with about equal amounts of radioactive and nonradioactive Si during heating at 400 °C for 5 min. After an 1‐sec annealing stage (450→500 °C in 1 h) this silicide layer, which moves to the top of the sample during SPEG, is etched off with aqua regia. From the absence of radioactive 31Si in the etch, it is concluded that SPEG takes place by a dissociation mechanism rather than by diffusion.
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68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
82.30.-b Specific chemical reactions; reaction mechanisms
81.05.Cy Elemental semiconductors

Enhanced crystallinity of silicon films grown from eutectic melt on aluminum sheets

Takeshi Saito and Yasuo Seki

Appl. Phys. Lett. 29, 600 (1976); http://dx.doi.org/10.1063/1.89157 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2008

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Silicon films were grown from Al‐Si eutectic melt directly formed on aluminum sheets. High‐energy silicon atoms were deposited onto aluminum sheets at 420 °C in an argon discharge atmosphere of 5×10−4 Torr using an rf ion‐plating system. A significant increase in the crystallinity of silicon films was observed from transmission electron diffraction studies. The mechanism of silicon eutectic growth on aluminum sheets is also discussed.
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68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Schottky‐barrier characteristics of metal–amorphous‐silicon diodes

C. R. Wronski, D. E. Carlson, and R. E. Daniel

Appl. Phys. Lett. 29, 602 (1976); http://dx.doi.org/10.1063/1.89158 (4 pages) | Cited 72 times

Online Publication Date: 28 August 2008

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Metal–amorphous‐silicon Schottky barriers, similar to those used in thin‐film amorphous‐silicon solar cells, exhibit nearly ideal diode behavior in the dark. The current‐voltage characteristics have been studied in the range from 270 to 370 °K and are found to be in agreement with the diffusion theory of metal‐semiconductor rectification. Barrier heights, which were measured by two different methods, depend on the metal work function, and barriers as high as ∼1.1 eV are obtained with Pt films.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.80.Ng Disordered solids
84.60.Jt Photoelectric conversion
85.30.Hi Surface barrier, boundary, and point contact devices

Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser material

B. Monemar and G. R. Woolhouse

Appl. Phys. Lett. 29, 605 (1976); http://dx.doi.org/10.1063/1.89159 (3 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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We have observed and analyzed a very rapid form of degradation caused by the optical excitation of GaAs/GaAlAs DH laser material. It consists of the very rapid (50 μ/sec) development of 〈110〉‐oriented lines originating at a mechanically damaged area and restricted to the optically excited area. TEM analysis shows that the degraded region consists of an orthogonal array of misfit dislocations of 60° type at the interface between the p‐ternary layer and the active region. It seems likely that the dislocations are generated by glide as a result of the lattice misfit stress between GaAs and GaAlAs and that their energy of motion is supplied through nonradiative recombination events.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
85.60.Jb Light-emitting devices
61.72.Lk Linear defects: dislocations, disclinations

MIS silicon solar cells

E. Fabre

Appl. Phys. Lett. 29, 607 (1976); http://dx.doi.org/10.1063/1.89160 (4 pages) | Cited 11 times

Online Publication Date: 28 August 2008

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A careful analysis of I‐V curves under illumination makes it possible to characterize the different parameters leading to an increase of the open‐circuit voltage Voc of MIS silicon solar cells with respect to classical Schottky barrier solar cells. The separate influence of the effective barrier height and of the quality factor of the diode upon Voc is emphasized. An over‐all conversion efficiency over 8% under AM1 illumination is reported for a large‐area (2.5 cm2) MIS cell.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

MIS solar cell—General theory and new experimental results for silicon

Martin A. Green and R. B. Godfrey

Appl. Phys. Lett. 29, 610 (1976); http://dx.doi.org/10.1063/1.89161 (3 pages) | Cited 21 times

Online Publication Date: 28 August 2008

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The metal–thin‐insulator–semiconductor structure recently has been shown to have potential as a simple efficient solar cell. A general theory of these solar cells as well as experimental results for silicon devices optimized on the basis of this theory are described. The experimental devices have exceptionally good open‐circuit voltages. Under illumination resulting in a short‐circuit current density of 32 mA/cm2, an open‐circuit voltage of 618 mV and a fill factor of 0.6 were obtained.
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects

ZnxCd1−xS films for use in heterojunction solar cells

L. C. Burton and T. L. Hench

Appl. Phys. Lett. 29, 612 (1976); http://dx.doi.org/10.1063/1.89162 (3 pages) | Cited 37 times

Online Publication Date: 28 August 2008

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ZnxCd1−xS films suitable for use in solar cells have been formed by simultaneous evaporating of ZnS and CdS. Lattice parameter and band gap are found to change almost linearly with composition. Electrical resistivity increases from <1 to ≳1010Ω cm as x increases from 0 to 1. Nonseries‐resistance‐limited ZnxCd1−xS‐CuyS photovoltaic cells have exhibited open‐circuit voltages greater than 0.7 V, apparently due to a better match between the ZnxCd1−xS and CuyS electron affinities.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Pressure study of the external quantum efficiency of N‐doped GaAs1−xPx light‐emitting diodes

R. J. Nelson, N. Holonyak, J. J. Coleman, D. Lazarus, D. L. Keune, A. H. Herzog, W. O. Groves, and George G. Kleiman

Appl. Phys. Lett. 29, 615 (1976); http://dx.doi.org/10.1063/1.89163 (3 pages) | Cited 5 times

Online Publication Date: 28 August 2008

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The change in electroluminescence intensity as a function of hydrostatic pressure is measured for N‐doped GaAs1−xPx diodes in the composition regions x∼0.48 and ∼0.65. A large decrease with pressure is observed for the short‐range N transition (x∼0.48) reflecting the effect of the nearby Γ conduction band edge. The longer‐range NX transition (x∼0.65) is observed to be much less sensitive to pressure, which agrees with the expected smaller effect of Γ on NX at this composition. Based on N and NX oscillator strengths provided by a recent theoretical model for GaAs1−xPx : N, calculations of the relative change in external quantum efficiency are found to fit the data well.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
71.20.Mq Elemental semiconductors
71.20.Nr Semiconductor compounds
62.50.-p High-pressure effects in solids and liquids

Hole conduction in Si3N4 films on Si

Z. A. Weinberg

Appl. Phys. Lett. 29, 617 (1976); http://dx.doi.org/10.1063/1.89164 (3 pages) | Cited 20 times

Online Publication Date: 28 August 2008

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Dominant hole conduction is observed in thin Si3N4 films deposited on silicon with holes being injected from either aluminum or gold electrodes. Hole transport is confirmed by employing a shallow junction diode detector. Such a diode can serve also as excellent means for separating conduction currents from transient displacement currents under pulsed conditions.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Ht High-field and nonlinear effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Electroluminescence in amorphous silicon

J. I. Pankove and D. E. Carlson

Appl. Phys. Lett. 29, 620 (1976); http://dx.doi.org/10.1063/1.89165 (3 pages) | Cited 55 times

Online Publication Date: 28 August 2008

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Electroluminescence has been obtained in forward‐biased p‐i‐n diodes, and also in Schottky barrier diodes fabricated from discharge‐produced amorphous Si. The emission at 78 °K in both electroluminescence and photoluminescence peaks at 1.28±0.08 eV in a 0.2‐eV broad band with an external quantum efficiency of ∼10−3.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
81.40.Tv Optical and dielectric properties related to treatment conditions
72.80.Ng Disordered solids

Energy gaps of ordered and disordered A15 ’’phases’’ in Nb3Ge measured by tunneling

J. M. Rowell and P. H. Schmidt

Appl. Phys. Lett. 29, 622 (1976); http://dx.doi.org/10.1063/1.89166 (4 pages) | Cited 33 times

Online Publication Date: 28 August 2008

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In electron tunneling measurements into high‐Tc getter‐sputtered Nb3Ge films, two energy gaps are clearly identified. The larger, 2Δ=7.8 meV, we associate with well‐ordered A15 material. The smaller, 2Δ∼1.0 meV, we suggest indicates the presence of very disordered material, because we cannot identify any known phase of the NbGe system with this low gap, and because a most interesting ’’phase’’ of Nb3Ge, with 2Δ=0.86 meV and Tc=3.06 K, was isolated by sputtering from the same target onto a cold (100−200 °C) substrate.
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
74.50.+r Tunneling phenomena; Josephson effects
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