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Volume 3

Issue 12 | 15 Dec | pp. 213-217

Issue 11 | 1 Dec | pp. 193-211

Issue 10 | 15 Nov | pp. 171-191

Issue 9 | 1 Nov | pp. 143-171

Issue 8 | 15 Oct | pp. 125-142

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1963

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15 Dec 1963

Volume 3, Issue 12, pp. 213-217

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Select this Article		PROPERTIES OF SILICON p‐n JUNCTIONS FORMED BY Cs⁺ IMPLANTATION AT LOW ENERGIES D. B. Medved, G. P. Rolik, R. C. Speiser, and H. L. Daley Appl. Phys. Lett. 3, 213 (1963); http://dx.doi.org/10.1063/1.1753853 (3 pages) \| Cited 6 times Online Publication Date: 29 November 2004 Full Text: \| Download PDF
		Abstract Unavailable

Select this Article		BIQUADRATIC EXCHANGE ENERGY IN RUBY‐0.5% Cr₂O₃ P. Kisliuk and W. F. Krupke Appl. Phys. Lett. 3, 215 (1963); http://dx.doi.org/10.1063/1.1753854 (3 pages) \| Cited 11 times Online Publication Date: 29 November 2004 Full Text: \| Download PDF
		Abstract Unavailable

Select this Article FREE		Erratum: FORMATION OF SILICON WHISKERS ON THE SUBLIMATING SURFACE Yasuo Nannichi Appl. Phys. Lett. 3, 217 (1963); http://dx.doi.org/10.1063/1.1753855 (1 page) Online Publication Date: 29 November 2004 Full Text: \| Download PDF
		Abstract Unavailable

Select this Article FREE		Erratum: EFFECT OF GROWTH ATMOSPHERE ON IMPURITY PRECIPITATION IN ALKALI HALIDE CRYSTALS R. W. Dreyfus Appl. Phys. Lett. 3, 217 (1963); http://dx.doi.org/10.1063/1.1753856 (1 page) Online Publication Date: 29 November 2004 Full Text: \| Download PDF
		Abstract Unavailable

 

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