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1 Jan 1977

Volume 30, Issue 1, pp. 1-47


Thermal degradation of homoepitaxial GaAs interfaces

W. Y. Lum, H. H. Wieder, W. H. Koschel, S. G. Bishop, and B. D. McCombe

Appl. Phys. Lett. 30, 1 (1977); http://dx.doi.org/10.1063/1.89215 (3 pages) | Cited 34 times

Online Publication Date: 26 August 2008

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Photoluminescence techniques have been used to detect and characterize p‐type conducting layers formed on the surface of semi‐insulating GaAs substrates and at the liquid phase epitaxial layer–GaAs substrate interface during pregrowth heat treatment. These layers contain ∼1017 cm−3 shallow acceptors and a high density of arsenic vacancy complexes, and can be eliminated by pregrowth Ga etching of the substrate.
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81.40.Ch
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.40.Rs Electrical and magnetic properties related to treatment conditions
78.40.Fy Semiconductors

Electronic effects on dislocation velocities in heavily doped germanium

J. R. Patel and L. R. Testardi

Appl. Phys. Lett. 30, 3 (1977); http://dx.doi.org/10.1063/1.89204 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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Based on a model proposed by Frisch and Patel, the dislocation velocity behavior in heavily doped germanium has been analyzed using Fermi‐Dirac statistics. Both the isothermal doping dependence and the temperature dependence of the change in dislocation velocity with doping can be accounted for by assuming an acceptorlike dislocation energy level, somewhat above the center of the energy gap.
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61.72.Lk Linear defects: dislocations, disclinations
66.30.Lw Diffusion of other defects
61.72.U- Doping and impurity implantation
78.40.Fy Semiconductors

Extension of the Schottky barrier detector to 70 μm (4.3 THz) using submicron‐dimensional contacts

D. T. Hodges and M. McColl

Appl. Phys. Lett. 30, 5 (1977); http://dx.doi.org/10.1063/1.89208 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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Schottky barrier diode detection in both video and mixing modes of operation has been extended to 4.252 THz (70.5 μm) using 0.5‐μm‐diam diodes fabricated from heavily doped nonepitaxial n‐type GaAs. These ultrasmall, and consequently ultralow capacitance, junctions were prepared using electron‐beam lithography and have yielded the smallest reported series‐resistance junction‐capacitance product for a Schottky barrier diode. The potential for extending diode operation to still higher frequencies is discussed.
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85.30.Hi Surface barrier, boundary, and point contact devices
84.40.Ba Antennas: theory, components and accessories
42.50.-p Quantum optics
73.30.+y Surface double layers, Schottky barriers, and work functions

Anomalous photoresponse of n‐TiO2 electrode in a photoelectrochemical cell

H. Morisaki, M. Hariya, and K. Yazawa

Appl. Phys. Lett. 30, 7 (1977); http://dx.doi.org/10.1063/1.89209 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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The current‐potential characteristics of n‐TiO2 electrodes have been investigated in a photoelectrochemical cell. Photoresponse induced by the light of energy lower than the band gap of TiO2 has been observed in the potential range between −1.0 and −1.4 V vs SCE in 1N NaOH. The photoresponse, which is sensitive to the oxygen gas dissolved in solution, has been attributed to some surface states at the TiO2‐electrolyte interface.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Ga Transition-metal compounds
82.47.-a Applied electrochemistry
82.45.-h Electrochemistry and electrophoresis

Laser light‐scattering technique for measurements of turbulent mixing

E. J. Shaughnessy and J. B. Morton

Appl. Phys. Lett. 30, 10 (1977); http://dx.doi.org/10.1063/1.89210 (2 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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A laser light‐scattering technique for measuring the relative particle concentration in a turbulent mixing field is described. The effects of ambiguity noise and optical path attenuation noise on the measurement of concentration fluctuations with this technique are discussed. Measurements of the admixture spectra in a turbulent jet show good agreement with those obtained using hot wires.
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47.27.T- Turbulent transport processes
42.60.-v Laser optical systems: design and operation

Multifunction integrated optic device using magnetically alterable phase grating

G. F. Sauter, M. M. Hanson, and D. L. Fleming

Appl. Phys. Lett. 30, 11 (1977); http://dx.doi.org/10.1063/1.89211 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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A magnetically alterable phase grating integrated optic coupler‐modulator was formed utilizing the magnetic stripe domains in a LPE film of BixYb3−xFe5O12. Light was coupled to a glass waveguide and 72% intensity modulation was achieved.
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42.60.Fc Modulation, tuning, and mode locking
42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
85.70.Sq Magnetooptical devices

Photoluminescence from Mg‐implanted GaAs

Phil Won Yu and Y. S. Park

Appl. Phys. Lett. 30, 14 (1977); http://dx.doi.org/10.1063/1.89212 (3 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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Photoluminescence measurements at 4.2 °K were used to study the emission behavior and the annealing characteristics in Mg‐ion‐implanted layers in GaAs. Radiative recombination due to the donor‐acceptor pairs and free electrons with holes bound to acceptors involving Mg was observed. The ionization of Mg is esti mated to be 28±2 meV. The donor‐acceptor pair band shows a large energy shift with the change of the excitation intensity. Annealing at the temperatures 750–900 °C sufficient to optically activate Mg ions implanted and to recover from lattice damages.
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61.72.U- Doping and impurity implantation
78.55.-m Photoluminescence, properties and materials

Frequency domain measurements of dispersion in multimode optical fibers

L. G. Cohen, H. W. Astle, and I. P. Kaminow

Appl. Phys. Lett. 30, 17 (1977); http://dx.doi.org/10.1063/1.89213 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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A newly developed technique for directly measuring fiber dispersion in the frequency domain as a function of wavelength is described. A number of germanium‐ and boron‐doped fibers have been examined. The least dispersive borosilicate graded‐index fiber has a 1‐dB bandwidth of 1 GHz, after 1.07 km of propagation at λ=908 nm. Frequency domain measurements were inverted into the time domain after assuming that the phase of a power transfer function could be calculated from its amplitude spectrum.
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42.81.-i Fiber optics
42.30.Lr Modulation and optical transfer functions

Nuclear‐pumped lasing of 3He‐Xe and 3He‐Kr

R. J. De Young, N. W. Jalufka, and F. Hohl

Appl. Phys. Lett. 30, 19 (1977); http://dx.doi.org/10.1063/1.89214 (3 pages) | Cited 23 times

Online Publication Date: 26 August 2008

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Direct nuclear pumping of 3He‐Xe and 3He‐Kr has been achieved using the volumetric 3He(n,p)3H nuclear reaction. Lasing occurred at 2.027 μ and near 2.5 μ in Xe I and Kr I, respectively. The Xe transition has the lowest lasing flux threshold to date, 4×1015 n/cm2 sec. Scaling with both thermal flux and total pressure has been investigated.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.90.+i Other topics in nuclear engineering and nuclear power studies (restricted to new topics in section 28)

Proposed picosecond excited‐state measurement method using a tunable‐laser‐induced grating

A. E. Siegman

Appl. Phys. Lett. 30, 21 (1977); http://dx.doi.org/10.1063/1.89216 (3 pages) | Cited 14 times

Online Publication Date: 26 August 2008

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This letter analyzes a suggested technique for studying excited atomic or molecular states on a picosecond to subpicosecond time scale by using tunable laser beams, without requiring ultrafast laser pulses or optical detectors. In the proposed technique the frequency transform of the impulse response of an excited state is determined by measuring the diffraction of a cw probe laser beam from a moving excited‐state grating induced by two intersecting tunable excitation beams, as the frequency difference between the two cw excitation beams is varied.
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31.50.Df Potential energy surfaces for excited electronic states
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)
42.62.-b Laser applications
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates

Subpicosecond pulses from a cw double mode‐locked dye laser

Z. A. Yasa, A. Dienes, and J. R. Whinnery

Appl. Phys. Lett. 30, 24 (1977); http://dx.doi.org/10.1063/1.89217 (3 pages) | Cited 21 times

Online Publication Date: 26 August 2008

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Simultaneous picosecond and subpicosecond pulses are generated in a cw double mode‐locked dye laser. The rhodamine 6G dye pulses are of the order of 0.5 psec long, while the saturable absorber cresyl violet lases simultaneously with pulse durations of around 1 psec.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
06.60.Jn High-speed techniques (microsecond to femtosecond)

Refractive index of a native oxide anodically grown on GaAs

P. A. Barnes and D. P. Schinke

Appl. Phys. Lett. 30, 26 (1977); http://dx.doi.org/10.1063/1.89198 (3 pages) | Cited 13 times

Online Publication Date: 26 August 2008

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The refractive index of an anodically grown oxide on GaAs has been measured throughout the visible and near infrared and the data fitted to a single oscillator Sellmeier equation. Accurate refractive‐index data is required for possible use of anodic oxides as antireflection coatings on GaAs electro‐optic devices. For 11 as‐grown oxides the measured refractive index for λ=632.8 nm was n=1.7786±0.0138, while for five annealed oxides (259 °C for 1 h in N2) n=1.7469±0.0095. The calculated refractive index of annealed oxides at the emission wavelengths of interest for GaAs‐AlGaAs fiber communication sources is n=1.724±0.006 at λ=890±20 nm.
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75.20.Ck Nonmetals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Wc Optical coatings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optical waveguide parabolic coupling horns

W. K. Burns, A. F. Milton, and A. B. Lee

Appl. Phys. Lett. 30, 28 (1977); http://dx.doi.org/10.1063/1.89199 (3 pages) | Cited 28 times

Online Publication Date: 26 August 2008

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We propose parabolic‐shaped coupling horns to provide adiabatic transition regions between wide‐ and narrow‐channel optical waveguides. The parabolic shape is shown to derive from a simple ray model of channel propagation and is consistent with diffraction theory in the wide‐channel limit. An approximate mode dispersion theory is used to convert the criteria into a horn design for indiffused channel waveguides. Experimental horn transmission measurements of nearly 90% are reported for transitions from 25 μm to 8, 6, and 4 μm in Ti:LiNbO3 waveguides at 0.6328 μm.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
84.40.Az Waveguides, transmission lines, striplines

Precipitation of oxygen in silicon

P. E. Freeland, K. A. Jackson, C. W. Lowe, and J. R. Patel

Appl. Phys. Lett. 30, 31 (1977); http://dx.doi.org/10.1063/1.89200 (3 pages) | Cited 64 times

Online Publication Date: 26 August 2008

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At high temperatures (1200 °C) the precipitation of oxygen in bulk dislocation‐free Czochralski silicon is inhibited by the absence of nucleation centers. A substantial supersaturation corresponding to a temperature drop of about 80 °C below the equilibrium saturation temperature is necessary for nucleation to occur. However, following a preliminary low‐temperature treatment (700 °C) precipitation occurs at a substantially smaller undercooling. This suggests that precipitation in crystals without a prior low‐temperature treatment occurs by homogeneous nucleation in the crystalline phase, in the absence of structural defects. Using classical nucleation theory the surface free energy of the precipitate is calculated to be about 100 erg/cm2 and the critical nucleus contains about 200 oxygen atoms.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
82.60.Nh Thermodynamics of nucleation
64.75.-g Phase equilibria
61.72.Nn Stacking faults and other planar or extended defects

Two‐photon absorption spectroscopy of the intrinsic exciton fine structure in CdS

V. T. Nguyen, T. C. Damen, and E. Gornik

Appl. Phys. Lett. 30, 33 (1977); http://dx.doi.org/10.1063/1.89201 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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We have observed the fine structure of two‐photon excited P states in CdS by focusing a dye laser and a CO2 laser into the crystal. From the clear‐cut polarization selection rules, we demonstrate that the visible photon creates a virtual 1S exciton and, subsequently, the infrared photon brings it to the final P state. On this basis, we have calculated the two‐photon absorption coefficient which is in good agreement with experimental data.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.65.-k Nonlinear optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Optical rectification due to free carriers in gallium phosphide

A. F. Gibson, M. F. Kimmitt, S. Kothari, C. B. Hatch, and A. Serafetinides

Appl. Phys. Lett. 30, 36 (1977); http://dx.doi.org/10.1063/1.89202 (2 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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A strong optical rectification effect is observed in n‐type GaP, peaking near the wavelength range covered by HF lasers. The optical rectification is ascribed to free electrons and is interpreted in terms of the band structure proposed by Lawaetz. The effect can be exploited in the fabrication of fast robust room‐temperature radiation detectors in a wavelength range in which germanium photon drag detectors are not applicable.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
72.80.Ey III-V and II-VI semiconductors
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Arrival‐time detection in drift mobility measurements using an interdigital electrode

Ralph H. Young, William Mey, and Alfred P. Marchetti

Appl. Phys. Lett. 30, 38 (1977); http://dx.doi.org/10.1063/1.89203 (2 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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The conventional (time‐of‐flight) technique for studying charge transport in a slab or film of photoconductive insulator monitors the average current density in the sample. An interdigital electrode can be used to monitor the current density near the surface of the sample, a more specific form of information. Illustrative results are presented for photogenerated electrons in azulene and in anthracene containing deep traps. Prospective applications are noted, particularly to the study of amorphous photoconductors.
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72.40.+w Photoconduction and photovoltaic effects

A method to determine bulk lifetime and diffusion coefficient of minority carriers; application to n‐type LPE GaP

C. van Opdorp, C. Werkhoven, and A. T. Vink

Appl. Phys. Lett. 30, 40 (1977); http://dx.doi.org/10.1063/1.89205 (3 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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It is shown that the bulk lifetime and diffusion coefficient of minority carriers in semiconductor layers can accurately be determined from the dependence of near‐band‐edge exciton‐luminescence decay on layer thickness. This method is applied to n‐type LPE GaP using laser‐pulse excitation. As we expected, large differences are observed between the actual bulk lifetime and the measured effective lifetime: the largest ratio amounts to a factor of 4. Bulk lifetimes as high as 5 μs and hole diffusion coefficients between 2.6 and 3.1 cm2/s are found at room temperature.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
78.40.Fy Semiconductors
85.60.Jb Light-emitting devices

Meniscus lines as nucleation sites for the active layer of a double‐heterostructure laser grown by LPE

M. B. Small, J. M. Blum, and R. M. Potemski

Appl. Phys. Lett. 30, 42 (1977); http://dx.doi.org/10.1063/1.89206 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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It is demonstrated that at relatively low supersaturation the active layer of a DH laser nucleates on the meniscus lines on a surface which is not strongly terraced. It is further demonstrated that there is a finite angle of contact between the nucleating solid and the lower layer which results in the active layer growing as islands about each nucleation site. As a result, there is a minimum thickness of the active layer which is continuous. These observations are a possible explanation for the phenomenon which has been described as ’’rake lines’’ in DH laser structures and explains in general the difficulties encountered in trying to fabricate lasers with very thin active layers.
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68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes

Laser‐produced‐plasma energy transport through plastic films

F. C. Young, R. R. Whitlock, R. Decoste, B. H. Ripin, D. J. Nagel, J. A. Stamper, J. M. McMahon, and S. E. Bodner

Appl. Phys. Lett. 30, 45 (1977); http://dx.doi.org/10.1063/1.89207 (3 pages) | Cited 55 times

Online Publication Date: 26 August 2008

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The transport of energy from a 1.06‐μm, 95‐psec laser pulse at an irradiance of 1015 W/cm2 through a thin layer of polystyrene into an Al substrate was studied by x‐ray, ion, and scattered‐light measurements. The intensities of the following quantities were measured as a function of polystyrene thickness: (1) x‐ray line radiation from the Al backing, (2) bremsstrahlung continuum from 3 to 88 keV, (3) ions of several keV energy, and (4) scattered laser light. The results indicate that a polystyrene thickness of no more than 0.5 μm is sufficient to inhibit substantial heating of the Al substrate.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
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