APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 May 1977

Volume 30, Issue 10, pp. 501-552


Radioactive silicon as a marker in thin‐film silicide formation

R. Pretorius, C. L. Ramiller, S. S. Lau, and M‐A. Nicolet

Appl. Phys. Lett. 30, 501 (1977); http://dx.doi.org/10.1063/1.89230 (3 pages) | Cited 33 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A new technique using radioactive 31Si (half‐life =2.62 h), formed in a nuclear reactor, as a marker for studying silicide formation is described. A few hundred angstroms of radioactive silicon is first deposited onto the silicon substrate, followed immediately by the deposition of a few thousand angstroms of the metal. When the sample is heated, a silicide is first formed with the radioactive silicon. Upon further silicide formation, this band of radioactive silicide can move to the surface of the sample if silicide formation takes place by diffusion of the metal or by silicon substitutional and/or vacancy diffusion. However, if the band of radioactive silicide stays at the silicon substrate interface it can be concluded that silicon diffuses by interstitial and/or grain‐boundary diffusion. This technique was tested by studying the formation of Ni2Si on 〈100〉 silicon at 330 °C. From a combination of ion‐beam sputtering, radioactivity measurement, and Rutherford backscattering it is found that the band of radioactive silicide moves to the surface of the sample during silicide formation. From these results, implanted noble‐gas marker studies and the rate dependence of Ni2Si growth on grain size, it is concluded that nickel is the dominant diffusing species during Ni2Si formation, and that it moves by grain‐boundary diffusion.
Show PACS
68.55.-a Thin film structure and morphology
66.30.Fq Self-diffusion in metals, semimetals, and alloys
82.30.-b Specific chemical reactions; reaction mechanisms

Self‐aligned three‐dimensional Ga1−xAlxAs structures grown by molecular beam epitaxy

Seiichi Nagata, Tsuneo Tanaka, and Masakazu Fukai

Appl. Phys. Lett. 30, 503 (1977); http://dx.doi.org/10.1063/1.89231 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Local thicknesses of a GaAs epitaxial layer grown on a mesa stripe by semiparallel Ga and As4 molecular beams have been found to be proportional to cosϕGa, where ϕGa is a local incident angle of the Ga beam to a local crystal growing surface. Submicron‐thick three‐dimensional GaAs‐Ga1−xAlxAs multilayers have been grown self‐aligningly on corrugated structures with a 8‐μm period. The layer thicknesses and AlAs compositions (x) are also interpreted by the local incident angles of Ga and Al beams, while evidence of atom diffusion is revealed.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electronically variable delay using ferroelastic‐ferroelectrics

L. A. Coldren, R. A. Lemons, A. M. Glass, and W. A. Bonner

Appl. Phys. Lett. 30, 506 (1977); http://dx.doi.org/10.1063/1.89232 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Coupled ferroelastic‐ferroelectric domains in the rare‐earth molybdates can be used to provide electronically variable analog delay in simple acoustic delay line structures. Delay variations of ∼3% for surface acoustic waves and 12% for bulk longitudinal waves are demonstrated with gadolinium molybdate [Gd2 (MoO4)3] crystals. Estimates of a number of parameters useful in evaluating device performance are made from experimental measurements.
Show PACS
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.60.+d Acoustic signal processing
62.65.+k Acoustical properties of solids

Damage production by high‐energy d‐Be neutrons in Cu, Nb, and Pt at 4.2 °K

J. B. Roberto, C. E. Klabunde, J. M. Williams, R. R. Coltman, M. J. Saltmarsh, and C. B. Fulmer

Appl. Phys. Lett. 30, 509 (1977); http://dx.doi.org/10.1063/1.89233 (3 pages) | Cited 22 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Electrical resistivity measurements have been used to observe damage production rates for Cu, Nb, and Pt irradiated with high‐energy d‐Be neutrons at 4.2 °K. The neutrons were generated at the Oak Ridge Isochronous Cyclotron by the reaction of 40‐MeV deuterons incident on a thick Be target. The resulting neutron energy spectrum was broadly peaked near 15 MeV. Damage production was proportional to fluence up to 4×1015 n/cm2, and was approximately three times greater than for the same fluence of fission neutrons in these materials. This result is in good agreement with predictions based on damage energy calculations.
Show PACS
61.80.Hg Neutron radiation effects

Selective black absorbers using rf‐sputtered Cr2O3/Cr cermet films

John C. C. Fan and Steven A. Spura

Appl. Phys. Lett. 30, 511 (1977); http://dx.doi.org/10.1063/1.89234 (3 pages) | Cited 37 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Excellent selective black absorbers for solar radiation, with solar absorptivity of over 0.9 and infrared emissivity of less than 0.1, have been obtained by using rf sputtering to coat metal substrates with a Cr2O3/Cr cermet film, then with a Cr2O3 antireflection coating. By determining the optical constants of Cr2O3/Cr films over the composition range up to 35 vol% Cr, it was found that films containing 29 vol% Cr are nearly optimum for this application. The optical and chemical properties of absorbers made with such films are quite similar to those obtained with electroplated Cr‐black coatings. This similarity suggests that the electroplated coatings are actually Cr2O3/Cr cermets comparable in composition and microstructure to the sputtered films.
Show PACS
84.60.Ve Energy storage systems, including capacitor banks
81.05.Mh Cermets, ceramic and refractory composites
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.15.Cd Deposition by sputtering

Energy threshold effects in the collisionless dissociation of polyatomic molecules by ir laser radiation

Malcolm C. Gower and Kenneth W. Billman

Appl. Phys. Lett. 30, 514 (1977); http://dx.doi.org/10.1063/1.89237 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF


See Also: Erratum

Show Abstract
The threshold for collisionless dissociation of SF6, SiF4, and CF2Cl2 by focused CO2 laser radiation has been measured. This threshold is a laser pulse energy effect and, within experimental error, is found to be the same for all three gases. Provided collisions cannot occur during the laser pulse, the degree of dissociation produced depends only on the energy in the pulse, which is consistent with simple adiabatic vibrational heating of the molecules by the laser.
Show PACS
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
82.50.Hp Processes caused by visible and UV light
33.80.Gj Diffuse spectra; predissociation, photodissociation
28.60.+s Isotope separation and enrichment

Laser action in Al II and He I in a slot cathode discharge

Wolfgang K. Schuebel

Appl. Phys. Lett. 30, 516 (1977); http://dx.doi.org/10.1063/1.89238 (4 pages) | Cited 12 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Laser excitation of metal vapors and gases in four types of hollow cathodes employing transverse electrical discharges is discussed. A water‐cooled slot cathode is demonstrated to provide two distinct laser excitation modes. cw laser action at 7471, 7042, and 6920 Å from Al II, which is cathodically sputtered by Ne/H2 mixtures and excited in charge‐transfer collisions, is reported. Pulsed laser action at 7065.21 and 7065.17 Å from He I, which is excited in direct electron impact collisions in the presence of H2 is reported. Laser performance data relating to gas pressures, currents, pulse widths, and gains are presented. The importance of H2 admixtures to the laser species is discussed.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona
34.70.+e Charge transfer

Chirped‐grating demultiplexers in dielectric waveguides

A. C. Livanos, A. Katzir, A. Yariv, and C. S. Hong

Appl. Phys. Lett. 30, 519 (1977); http://dx.doi.org/10.1063/1.89218 (3 pages) | Cited 27 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A wavelength‐selective beamsplitter has been realized by fabricating chirped (variable period) grating in an optical waveguide. This beamsplitter can demultiplex a signal traveling in a fiber and send each frequency component to a different fiber.
Show PACS
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Gn Optical waveguides and couplers
42.60.Fc Modulation, tuning, and mode locking

Integrated interferometric reflector

W. Streifer, D. R. Scifres, and R. D. Burnham

Appl. Phys. Lett. 30, 521 (1977); http://dx.doi.org/10.1063/1.89219 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF


See Also: Erratum

Show Abstract
We propose a new integrated interferometric reflector (IIR) with electrical control. The IIR is suitable for incorporation in integrated optical devices as a laser reflector.
Show PACS
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Ci Filters, zone plates, and polarizers

cw operation of distributed feedback Pb1−xSnxTe lasers

J. N. Walpole, A. R. Calawa, S. R. Chinn, S. H. Groves, and T. C. Harman

Appl. Phys. Lett. 30, 524 (1977); http://dx.doi.org/10.1063/1.89220 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Distributed feedback Pb1−xSnxTe double‐heterostructure lasers grown by molecular‐beam epitaxy with cw operation up to 50 K are reported. The grating of 1.1‐μm periodicity operates in the first Bragg order near 800 cm−1 (12.5 μm). Single‐mode operation is obtained over a wide range of diode current and heat‐sink temperature. Continuous current tuning of mode frequency up to 7 cm−1 is obtained, and by varying both diode current and heat‐sink temperature complete coverage of the range 795–806.5 cm−1 is demonstrated.
Show PACS
42.55.Px Semiconductor lasers; laser diodes

Nonradiative dark regions along surface ripples in GaP LPE layers

Takashi Kajimura, Kunio Aiki, and Jun‐ichi Umeda

Appl. Phys. Lett. 30, 526 (1977); http://dx.doi.org/10.1063/1.89221 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A nonradiative dark region along a surface ripple is observed in optically and electrically excited GaP LPE layers. The region originates from the substrate interface and terminates at the ridge of the surface ripple. It is clearly distinguishable from the known one caused by dislocation in its features. The p‐n junction breakdown voltage in this region is lower than that in the radiative region in a LPE layer. This fact suggests that in liquid‐phase epitaxy an impurity concentrated region is formed in the growing process of surface ripples. The existence of the region contributes to the deterioration of the characteristics of devices using thin LPE layers.
Show PACS
78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
78.30.-j Infrared and Raman spectra
85.60.Jb Light-emitting devices

Monte Carlo calculations on hot electron energy tails

A. Phillips and P. J. Price

Appl. Phys. Lett. 30, 528 (1977); http://dx.doi.org/10.1063/1.89222 (3 pages) | Cited 29 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A Monte Carlo procedure which makes it practicable to extend the calculation of hot electron distribution functions to rarely occupied ranges of the electron state is described. The method is illustrated by a calculation of the energy distribution, for semiconductor electrons in an electric field, as a function of distance in the drift direction from the initial position. For energies comparable to the ultimate average energy, the ’’thermalization’’ of the distribution occurs close to the starting point, but with increasing energy it occurs at increasing distances.
Show PACS
72.20.Ht High-field and nonlinear effects
72.10.Bg General formulation of transport theory
85.30.De Semiconductor-device characterization, design, and modeling

Integrated GaAs‐AlxGa1−xAs injection lasers and detectors with etched reflectors

J. L. Merz and R. A. Logan

Appl. Phys. Lett. 30, 530 (1977); http://dx.doi.org/10.1063/1.89223 (4 pages) | Cited 6 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
An integrated injection laser‐waveguide‐detector device is described, fabricated from AlxGa1−xAs layers grown by liquid‐phase epitaxy. Reflectors are formed by a two‐step preferential etch procedure. For a laser cavity formed by one etched reflector and one cleaved mirror, an overall differential transfer efficiency of 10±1% has been measured at the detector after transmission through a 1‐μm‐thick passive waveguide 250 μm long. If both reflectors are etched, efficiencies as high as 2% are still observed.
Show PACS
42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
85.60.Gz Photodetectors (including infrared and CCD detectors)

Generation of interface states due to emission of leakage electrons from silicon substrate into silicon dioxide

H.‐C. W. Huang

Appl. Phys. Lett. 30, 533 (1977); http://dx.doi.org/10.1063/1.89224 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Experimental evidence of interface state generation due to the emission of leakage electrons from the silicon substrate into SiO2 is presented. Interface states were measured on MNOS capacitors before and after temperature‐bias stress, where the electron emission process occurred, using the high‐frequency and quasistatic C‐V technique. Electrical access to the silicon surface to vary the space‐charge width was made by the use of a very small diffusion underneath the field plate. The generation of interface states which can in turn cause device degradation is undoubtedly a reliability concern.
Show PACS
73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Barrier‐controlled low‐threshold pnpn GaAs heterostructure laser

C. P. Lee, A. Gover, S. Margalit, I. Samid, and A. Yariv

Appl. Phys. Lett. 30, 535 (1977); http://dx.doi.org/10.1063/1.89225 (4 pages) | Cited 4 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm2) room‐temperature threshold currents.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Lateral current confinement by reverse‐biased junctions in GaAs‐AlxGa1−xAs DH lasers

W. T. Tsang and R. A. Logan

Appl. Phys. Lett. 30, 538 (1977); http://dx.doi.org/10.1063/1.89226 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Two methods are described for fabrication of a DH stripe‐geometry laser where lateral current confinement is obtained with reverse‐biased junctions on both sides of the active layer. Threshold current densities, comparable in values to optimum values achieved in other stripe geometry lasers, are obtained as a function of top channel widths for lasers with single and double current confinement. The lasers exhibit clean stable mode patterns with excellent linearity of the optical output power as a function of injection current. Lasers with channel widths ≲14 μm operate in the lowest‐order transverse mode in the junction plane for currents up to ∼two times the threshold (an output power of 16 mW per mirror).
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Epitaxial growth of high Tc superconducting Nb3Ge on Nb3Ir

A. H. Dayem, T. H. Geballe, R. B. Zubeck, A. B. Hallak, and G. W. Hull

Appl. Phys. Lett. 30, 541 (1977); http://dx.doi.org/10.1063/1.89227 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Nb3Ir polycrystalline films with the A15 structure deposited on sapphire were used as substrates for the epitaxial growth of Nb3Ge because of the favorable lattice parameter match. The experimental results clearly show that epitaxial growth indeed occurs and helps to extend the range of homogeneity of the A15 phase up to 26.3 at.% Ge as compared with the thermodynamic equilibrium boundary at 19 at.% Ge. Furthermore, epitaxy results in a considerable rise in the superconducting transition temperature for Ge‐rich samples together with a reduction in the transition width.
Show PACS
74.25.-q Properties of superconductors
74.70.-b Superconducting materials other than cuprates
68.55.-a Thin film structure and morphology
74.78.-w Superconducting films and low-dimensional structures

Analyses of sputtered films of Nb3Ge

C. T. Wu, Lee Kammerdiner, and H. L. Luo

Appl. Phys. Lett. 30, 543 (1977); http://dx.doi.org/10.1063/1.89228 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The analyses of Nb‐Ge films prepared by sputtering with a modified rf arrangement are reported. The results indicate the importance of thermalization of sputtered particles for the formation of the high‐transition‐temperature compound Nb3Ge.
Show PACS
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
74.25.-q Properties of superconductors

Fluxon interactions

D. W. McLaughlin and A. C. Scott

Appl. Phys. Lett. 30, 545 (1977); http://dx.doi.org/10.1063/1.89229 (3 pages) | Cited 27 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A simple perturbation method is used to study fluxon (soliton) interactions on a Josephson transmission line (JTL). This technique efficiently provides information needed in the design of JTL computer circuits. We study (i) fluxons interacting with other fluxons in the presence of both dissipation and an externally controlled current bias and (ii) fluxons interacting with microshorts. The dynamics of fluxon pinning to a microshort is described and threshold conditions for fluxon‐antifluxon annihilation are presented. We emphasize that in this process free fluxons become bound into ’’breathers’’, which in turn decay into ’’photons’’ of the Josephson waveguide.
Show PACS
85.25.-j Superconducting devices
84.40.Az Waveguides, transmission lines, striplines
74.50.+r Tunneling phenomena; Josephson effects

A highly sensitive magnetic bubble detector in an essentially single‐mask overlay

A. G. H. Verhulst, T. W. Bril, and L. Postma

Appl. Phys. Lett. 30, 548 (1977); http://dx.doi.org/10.1063/1.89235 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A new field‐access bubble detector is described and assessed in terms of signal‐strength propagation margins and technology benefits. In this design the detection and propagation functions of the detector are separated by means of a sandwich structure. The so‐called sandwich detector consists of a thin NiFe layer (detection), an insulation layer of SiO2, and a thick NiFe layer (propagation). The layers are structured with the aid of one mask (no alignment) while two gross masks (alignment accuracy within 25 μm) are used to create the connections to the detection layer. The measured sensitivity of a 35‐chevron stretcher sandwich detector, designed for 7‐μm bubbles (4π Ms=150 G), is 2 mV/mA.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.70.Ay Magnetic device characterization, design, and modeling

Isotope separation by resonance scattering

Anthony F. Bernhardt and Edward Teller

Appl. Phys. Lett. 30, 550 (1977); http://dx.doi.org/10.1063/1.89236 (3 pages)

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The resonant or near‐resonant interaction of two atoms or molecules, in states which can respectively emit and absorb photons of nearly the same energy, allows them to scatter with large cross sections compared to the usual van der Waals cross sections. This enhanced scattering can be used to separate a mixture of isotopes in a beam. In most cases, a laser or maser is needed to selectively excite the isotope of interest. For the separation of hydrogen and deuterium, however, a single‐step enrichment of nearly 30‐fold is calculated at 25% deuterium recovery without the use of lasers or masers.
Show PACS
28.60.+s Isotope separation and enrichment
34.20.-b Interatomic and intermolecular potentials and forces, potential energy surfaces for collisions
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close